• Proceedings of the Korean Vacuum Society Conference
• /
• 2012.08a
• /
• pp.373-373
• /
• 2012

We fabricated conductive zinc oxide (ZnO) thin film at low temperature by UV-enhanced atomic layer deposition. The atomic layer deposition relies on alternate pulsing of the precursor gases onto the substrate surface and subsequent chemisorption of the precursors. In this experiment, diethylzinc (DEZ) and $H_2O$ were used as precursors with UV light. The UV light was very effective to improve the conductivity of the ZnO thin film. The thickness, transparency and resistivity were investigated by ellisometry, UV-visible spectroscopy and Four-point probe.

• Bulletin of the Korean Chemical Society
• /
• v.33 no.8
• /
• pp.2675-2678
• /
• 2012

Studies on niobium anodization in the mixture of 1 M $H_3PO_4$ and 1 wt % HF at galvanostatic anodization are described here in detail. Interestingly, duplex niobium oxide consisting of thick barrier oxide and correspondingly thick porous oxide was prepared at a constant current density of higher than 0.3 $mAcm^{-2}$, whereas simple porous type oxide was formed at a current density of lower than 0.3 $mAcm^{-2}$. In addition, simple barrier or porous type oxide was obtained by galvanostatic anodization at a single electrolyte of either 1 M $H_3PO_4$ or 1 wt % HF, respectively. The formation mechanism of duplex type structures was ascribed to different forming voltages required for moving anions.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.33 no.1
• /
• pp.25-30
• /
• 2020

Oxide (SiO₂)/Metal(Ag)/Oxide(SiO₂, ITO, ZnO) multilayer films were fabricated using a magnetron sputtering technique at room temperature on Si (p-type, 100) and a glass substrate. The electrical and optical properties of the asymmetric multilayer films depended on the thickness of the mid-layer film and the type of oxide in the bottom layer. As the metal layer becomes thicker, the sheet resistance decreases. However, the transmittance decreases when the metal layer exceeds a threshold thickness of approximately 10~12 nm. In addition, the sheet resistance and transmittance change according to the type of oxide in the bottom layer. If the oxide has a large resistivity, the overall sheet resistance increases. In addition, the anti-reflection effect changes according to the refractive index of the oxide material. The optical and electrical properties of multilayer films were investigated using an ultraviolet visible (UV-Vis) spectrophotometer and a 4-point probe, respectively. The optimum structure is SiO₂ (30 nm)/Ag (10 nm)/ZnO (30 nm) multilayer, with the highest FOM value of 7.7×10^-3 Ω^-1.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.28 no.3
• /
• pp.185-190
• /
• 2015

In this study, we fabricated the indium gallium zinc oxide (IGZO), zinc oxide (ZnO), aluminum zinc oxide (AZO). oxide and silver are deposited by magnetron sputtering and thermal evaporator, respectively transparency and energy bandgap were changed by the thickness of silver layer. To fabricate metal oxide metal (OMO) structure, IGZO sputtered on a corning 1,737 glass substrate was used as bottom oxide material and then silver was evaporated on the IGZO layer, finally IGZO was sputtered on the silver layer we get the final OMO structure. The radio-frequency power of the target was fixed at 30 W. The chamber pressure was set to $6.0{\times}10^{-3}$ Torr, and the gas ratio of Ar was fixed at 25 sccm. The silver thickness are varied from 3 to 15 nm. The OMO thin films was analyzed using XRD. XRD shows broad peak which clearly indicates amorphous phase. ZnO, AZO, OMO show the peak [002] direction at $34^{\circ}$. This indicate that ZnO, AZO OMO structure show the crystalline peak. Average transmittance of visible region was over 75%, while that of infrared region was under 20%. Energy band gap of OMO layer was increased with increasing thickness of Ag layer. As a result total transmittance was decreased.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 1995.11a
• /
• pp.58-62
• /
• 1995

Thermally stimulated currents have been measured to investigate the trap characteristics of the MONOS structures with the tunneling oxide layer of 27${\AA}$ thick nitride layer of 73${\AA}$ thick and blocking oxide layer of 40${\AA}$ thick. By changing the write-in voltage and the write-in temperature, peaks of the I-T characteristic curve due to the nitride bulk traps and the blocking oxide-nitride interface traps ware separated from each other experimentally. The results indicate that the nitride bulk traps are distributed spatially at a single energy level and the blocking oxide-nitride interface traps are distributed energetically at interface.

• Journal of the Korean Institute of Telematics and Electronics A
• /
• v.33A no.7
• /
• pp.149-155
• /
• 1996

A new technique wasdeveloped which obtains selectively the htick fully recessed oxidized porous silicon layer (OPSL) with good dielectric property. The porous silicon layer was ocnverted to thick fully recessed oxide (FRO) with 3-step (1${\mu}$m, 1.5${\mu}$m, 1.8${\mu}$m) by multi-step thermal oxidation (after 400$^{\circ}$C, 1 hour by dry oxidation, 700$^{\circ}$C, 1 hour and then 1100$^{\circ}$C, 1 hour by wet oxidation). The breakdwon field of the FRO was about 2.5MV/cm and the leakage current was several pA ~ 100 pA in the range of 0 of 90 pF. The progress of oxidation of a porous silicon layer was studied by examining the infrared abosrption spectra. The refractive index (1.51) of the fRO, which was measured by ellipsometer, was comparable to that of the thermally grown silicon dioxide (1.46). The etching rate (1600${\AA}$/min) of the FRO was also almost equal to that of the thermal oxide.

• Proceedings of the KIEE Conference
• /
• 1997.11a
• /
• pp.296-298
• /
• 1997

The performance of thin film pressure sensors with polyimide and silicon oxide as a insulating layer between the stainless steel diaphragm and the Cu-Ni strain gauges is presented. The polyimide was spun on the stainless steel diaphragm and cured in an oven. The silicon oxide was deposited by rf sputtering. The thin film pressure sensor with silicon oxide as a insulating layer showed a better nonlinearity and a lower hysteresis.

• Journal of Electrical Engineering and Technology
• /
• v.10 no.3
• /
• pp.1169-1173
• /
• 2015

This paper presents vertical carbon nanotube (CNT) field effect transistors (FETs). For the first time, the author successfully fabricated vertical CNT-based FETs on an anodized aluminum oxide (AAO) template by using atomic layer deposition (ALD). Single walled CNTs were vertically grown and aligned with the vertical pores of an AAO template. By using ALD, a gate oxide material (Al₂O₃) and a gate metal (Au) were centrally located inside each pore, allowing the vertical CNTs grown in the pores to be individually gated. Characterizations of the gated/vertical CNTs were carried and the successful gate integration with the CNTs was confirmed.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2013.08a
• /
• pp.212-212
• /
• 2013

We fabricate and characterize top gate Graphene transistor using aluminum oxide as a gate insulator by atomic layer deposition (ALD). It is found that due to absence of functional group and dangling bonds, ALD of metal oxide is difficult on Graphene. Here we used 4-mercaptopheneol as a functionalization layer on Graphene to facilitate uniform oxide coverage. Contact angle measurement and Atomic force microscopy were used to confirm uniform oxide coverage on Graphene. Raman spectroscopy revealed that functionalization with 4-mercaptopheneol does not induce any defect peak on Graphene. Our device shows mobility values of 4,000 $cm^2/Vs$ at room temperature which also suggest top gate stack does not significantly increase scattering. The noncovalent functionalization method is non-destructive and can be used to grow ultra-thin dielectric for future Graphene applications.

• Korean Journal of Materials Research
• /
• v.26 no.2
• /
• pp.84-89
• /
• 2016

We present the rectifying and nitrogen monoxide (NO) gas sensing properties of an oxide semiconductor heterostructure composed of n-type zinc oxide (ZnO) and p-type copper oxide thin layers. A CuO thin layer was first formed on an indium-tin-oxide-coated glass substrate by sol-gel spin coating method using copper acetate monohydrate and diethanolamine as precursors; then, to form a p-n oxide heterostructure, a ZnO thin layer was spin-coated on the CuO layer using copper zinc dihydrate and diethanolamine. The crystalline structures and microstructures of the heterojunction materials were examined using X-ray diffraction and scanning electron microscopy. The observed current-voltage characteristics of the p-n oxide heterostructure showed a non-linear diode-like rectifying behavior at various temperatures ranging from room temperature to $200^{\circ}C$. When the spin-coated ZnO/CuO heterojunction was exposed to the acceptor gas NO in dry air, a significant increase in the forward diode current of the p-n junction was observed. It was found that the NO gas response of the ZnO/CuO heterostructure exhibited a maximum value at an operating temperature as low as $100^{\circ}C$ and increased gradually with increasing of the NO gas concentration up to 30 ppm. The experimental results indicate that the spin-coated ZnO/CuO heterojunction structure has significant potential applications for gas sensors and other oxide electronics.