• 전자공학회논문지D
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• 제34D권1호
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• pp.35-40
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• 1997

A new method to form the gate oxide and recrystllize the polycrystalline silicon (poly-Si) active layer simultaneously is proposed and fabricated successfully. During te irradiation of excimer laser, the poly-Si film is recrystallized, while the oxygen ion impurities injected into the amorphous silicon(a-Si) film are activated by laser energy and react with silicon atoms to form SiO2. We investigated the characteristics of the sample fabricated by proposed method using AES, TEM, AFM. The electrical performance of oxide was verified by ramp up voltage method. Our experimental results show that a high quality oxide, a pol-Si film with fine grain, and a smooth and clean interface between oxide and poly-Si film have been successfully obtained by the proposed fabrication method. The interface roughness of oxide/poly-Si fabricated by new method is superior to film by conventional fabrication os that the proposed method may improve the performance of poly-Si TFTs.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1998년도 춘계학술대회 논문집
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• pp.79-82
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• 1998

Film characteristics of thin ONO dielectric layers for MONOS(metal-oxide-nitride-oxide-semiconductor) EEPRM was investigated by AES and AFM. Second derivative spectra of AES Si LVV overlapping peak provided useful information for chemical state analysis of superthin film. The ONO films with dimension of tunneling oxide 24${\AA}$, nitride 33${\AA}$, and blocking oxide 40${\AA}$ were fabricated. During deposition of the LPCVD nitride films on tunneling oxide, this thin oxide was nitrized. When the blocking oxide were deposited on the nitride film, the oxygen not only oxidized the nitride surface, but diffused through the nitride. The results of ONO film analysis exhibits that it is made up of SiO$_2$(blocking oxide)/O-rich SiON(interface/N-rich SiON(nitride)/-rich SiON(interface)/N-rich SiON(nitride)/O-rich SiON(tunneling oxide).

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제45회 하계 정기학술대회 초록집
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• pp.207.2-207.2
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• 2013

Oxide-based thin film transistors have been attempted as powerful candidates for driving circuits for active-matrix organic light-emitting diodes and transparent electronics. The oxide TFTs are based on the amorphous multi-component oxides involving zinc, indium, and/or tin elements as main cation sources. The current work employed RF sputtering in order to deposit zinc-tin oxide thin films applicable to transparent oxide thin film transistors. The deposited thin film was characterized and probed in terms of materials and devices. The physical/chemical characterizations were performed using X-ray diffraction, Atomic Force Microscopy, Spectroscopic Ellipsometry, and X-ray Photoelectron Spectroscopy. The thin film transistors were fabricated using a bottom-gated structure where thermally-grown silicon oxide layers were applied as gate-dielectric materials. The inherent properties of oxide thin films are combined with the corresponding device performances with the aim to fabricating the multi-component oxide thin films being optimized towards transparent electronics.

• 한국정보통신학회논문지
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• 제22권1호
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• pp.117-124
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• 2018

박막 두께가 다른 무접합 비정질 InGaZnO 막막 트랜지스터를 제작하고 박막 두께, 동작 온도 및 빛의 세기에 따른 소자의 성능 변수를 추출하고 게이트 산화층 항복전압을 분석하였다. 박막의 두께가 클수록 소자의 성능이 우수하나 드레인 전류의 증가로 게이트 산화층 항복전압은 감소하였다. 고온에서도 소자의 성능은 개선되었으나 게이트 산화층 항복 전압은 감소하였다. 빛의 세기가 증가할수록 광자에 의해 생성된 전자로 드레인 전류는 증가 하였으나 역시 게이트 산화층 항복전압은 감소하였다. 박의 두께가 클수록, 고온일수록, 빛의 세기가 강할수록 채널의 전자수가 증가하여 산화층으로 많이 주입되었기 때문이다. 무접합 a-IGZO 트랜지스터를 BEOL 트랜지스터로 사용하기 위해서는 박막 두께 및 동작 온도를 고려해서 산화층 두께를 설정해야 됨을 알 수 있었다.

• 한국표면공학회지
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• 제35권3호
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• pp.149-157
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• 2002

Spectral emissivity depends on the surface conditions of the materials. The mechanisms that affect the spectral emissivity in anodic oxide films on aluminum were investigated. The aluminum specimens were anodized in a sulfuric acid solution and the thickness of the resulting oxide film formed changed with the anodizing time. FT-IR spectrum analysis identified the anodic oxide film as boehmite ($Al_2$$O_3$.$H_2$O). Both the infrared emisivity and reflectivity of the anodized aluminum were affected by the structure of the anodic oxide film because Al-OH and Al-O-Al have a pronounced absorption band in the infrared region of the spectrum. The presence of an anodic oxide film on aluminum caused a rapid drop in the infrared reflectivity. An aluminum surface in the clean state had an emissivity of approximately 0.2. However, the infrared emissivity rapidly increased to 0.91 as the thickness of the anodic oxide film increased.

• 한국진공학회지
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• 제4권S2호
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• pp.8-19
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• 1995

Ion beam enhanced deopsition(IBED) was adopted to synthesize biocompatible titanium oxide film. Structure characteristics of titanium oxide film were investigated by RBS, AES and XRD. The blood compatibility of the titanium oxide film was studied by measurements of blood clotting time and platelet adhesion. The results show that the anticoagulation property of titanium oxide film is improved significantly. The mechanism of anticoagulation of the titanium oxide film was discussed.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2005년도 International Meeting on Information Displayvol.I
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• pp.496-498
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• 2005

We reported that high dielectric hafnium oxide nano-film deposited by thermal atomic layer deposition on the poly-silicon film (poly-Si). The poly -Si film was produced by plasma enhanced chemical vapor deposition and excimer laser annealing. We used the hafniu m chloride ($HfCl_4$) and water as the precursors and analyzed the hafnium oxide film by transmission electron microscope and secondary ion mass spectrometer. Hafnium oxide produced by the ALD method showed very good coverage on the rough surface of poly-Si film. While deposited with 200 cycles, these hafnium oxide films revealed a relatively smooth surface and good uniformity, but the cumulative roughness produced by the incomplete reaction was apparent when the amount of deposition cycle increased to 600 cycles.

• 대한화학회지
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• 제54권4호
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• pp.380-386
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• 2010

황산 용액에서 양극산화(anodization)에 의하여 생성되는 산화피막의 생성과정(growth kinetics)과 이 피막의 전기적 성질을 전기화학적 임피던스 측정법(electrochemical impedance spectroscopy)으로 조사하였다. 산화피막은 $Al_2O_3$로 점-결함 모형(point defect model)에 따라 성장하였으며, n-형 반도체의 전기적 성질을 보였다.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2009년도 춘계학술발표대회
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• pp.52.1-52.1
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• 2009

Cupric oxide (CuO) is a p-type semiconductor with band gap of ~1.7 eV and reported to be suitable for catalysis, lithium-copper oxide electrochemical cells, and gas sensors applications. The nanoparticles, plates and nanowires of CuO were found sensing to NO2, H2S and CO. In this work, we report about the comparison about hydrogen sensing of nano thin film and nanowires structured CuO deposited on single-walled carbon nanotubes (SWNTs). The thin film and nanowires are synthesized by deposition of Cu on different substrate followed by oxidation process. Nano thin films of CuO are deposited on thermally oxidized silicon substrate, whereas nanowires are synthesized by using a porous thin film of SWNTs as substrate. The hydrogen sensing properties of synthesized materials are investigated. The results showed that nanowires cupric oxide deposited on SWNTs showed higher sensitivity to hydrogen than those of nano thin film CuO did.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2003년도 하계종합학술대회 논문집 II
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• pp.727-730
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• 2003

Thin tin oxide film with nano-size particle was prepared on silicon substrate by hydrothermal synthetic method and successive sol-gel spin coating method. The fabrication method of tin oxide film with ultrafine nano-size crystalline structure was tried to be applied to fabrication of micro gas sensor array on silicon substrate. The tin oxide film on silicon substrate was well patterned by chemical etching upto 5${\mu}{\textrm}{m}$width and showed very uniform flatness. The tin oxide film preparation method and patterning method were successfully applied to newly proposed 2-dimensional micro sensor fabrication.