• KIEE International Transactions on Electrophysics and Applications
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• v.4C no.3
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• pp.106-110
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• 2004

The operating condition of the OLED (organic light-emitting diode) is very sensitive to electrode thickness properties. The electrode thickness is a significant issue in the construction of OLEDs because of its transparency, high conductivity and high efficiency as an injector into organic materials. We carried out a systematic study to optimize the electrode thickness conditions in Indiumtin oxide (ITO), Molybdenum (Mo) and Aluminum (Al). Further, we measured electrode thickness under standard conditions [ITO 1500$\AA$, Mo 2600$\AA$, Al 1500$\AA$]. We also evaluated power consumption. In addition, we analyzed substrate uniformity with IVL measurement results. From these results, it is known that the electrode thickness should be optimized in order to accomplish optimal power efficiency.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1993.11a
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• pp.120-123
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• 1993

This paper describes the deposition and characteristics of electrochromic tungsten oxide thin films for electrochromic smart windows. Tungsten Oxide thin films(WO$_3$) are deposited by thermal evaporation techniques. By varying deposition parameters, WO$_3$ thin films exhibit different optical properties. The electrochromic devices are consist of ITO glass/ WO$_3$ thin films/ LiClO$_4$-propylene carbonate electrolyte/ counter electrode. The electrochromic properties of tungsten oxide thin films with different deposition condition ale investigated.

• Proceedings of the IEEK Conference
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• 2000.11b
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• pp.41-44
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• 2000

Ultra large scale integrated circuit(ULSI) & complementary metal oxide semiconductor(CMOS) circuits require gate electrode materials such as meta] silicides, titanium-silicide for gate oxides. Many previous authors have researched the improvements sub-micron gate oxide quality. However, little has been done on the electrical quality and reliability of ultra thin gates. In this research, we recommend novel shallow trench isolation structure and two step TiSi$_{2}$ formation for sub 0.1${\mu}{\textrm}{m}$ gate oxide.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.287.2-287.2
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• 2013

We synthesized a new composite of poly sodium 4-styrenesulfonate intercalated graphene oxide for energy storage devices by controlling oxidation time in the synthesis of graphite oxide. Specific capacitance was improved from 20 F/g of the previous composites to 88 F/g of the new composite at the current density of 0.3 A/g. The capacitance retention was 94% after 3000 cycles, indicating that the new composites of high cyclic stability, prominent performance as electric double layer capacitor, and even low resistance could be an excellent carbon based electrode for further energy storage devices.

• Carbon letters
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• v.26
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• pp.88-94
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• 2018

This manuscript explains the effective determination of urea by redox cyclic voltammetric analysis, for which a modified polypyrrole-graphene oxide (PPY-GO, GO 20% w/w of PPY) nanocomposite electrode was developed. Cyclic voltammetry measurements revealed an effective electron transfer in 0.1 M KOH electrolytic solution in the potential window range of 0 to 0.6 V. This PPY-GO modified electrode exhibited a moderate electrocatalytic effect towards urea oxidation, thereby allowing its determination in an electrolytic solution. The linear dependence of the current vs. urea concentration was reached using square-wave voltammetry in the concentration range of urea between 0.5 to $3.0{\mu}M$ with a relatively low limit of detection of $0.27{\mu}M$. The scanning electron microscopy was used to characterize the morphologies and properties of the nanocomposite layer, along with Fourier transform infrared spectroscopy. The results indicated that the nanocomposite film modified electrode exhibited a synergistic effect, including high conductivity, a fast electron-transfer rate, and an inherent catalytic ability.

• Applied Chemistry for Engineering
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• v.17 no.4
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• pp.343-348
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• 2006

The object of this experiment is to recover precious metals from plating rinsed wastewater generated from Lead Frame manufacturing process using electrolysis coupled hybrid process. This was achieved from Amberlite IRA 400 at 1.15 V electrolysis potential using the oxide electrode and at 1.30 V using the Al electrode and from Amberlite IRA 402 at 1.10 V using the oxide electrode and at 1.20 V using the Al electrode. During the first 10~30 min of the process, 90~95% of the silver can be recovered.

• Journal of the Korean Applied Science and Technology
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• v.26 no.4
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• pp.400-406
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• 2009

We investigated the electrochemical properties for Langmuir-Blodgett (LB) films of functionalized polyimide. LB films of polyimide monolayer were deposited by the Langmuir-Blodgett method on the indium tin oxide(ITO) glass. The electrochemical properties measured by cyclic voltammetry with a three-electrode system(an Ag/AgCl reference electrode, a platinum wire counter electrode and LB film-coated ITO working electrode) at various concentrations(0.5, 1.0, and 1.5 N) of $NaClO_4$ solution. The current of reduction and oxidation range was measured from 1650 mV to -1350 mV, continuously. The scan rates were 50, 100 and 150 mV/s, respectively. As a result, monolayer and multilayer LB films of polyimide are appeared on irreversible process caused by the oxidation current from the cyclic voltammogram.

• Transactions on Electrical and Electronic Materials
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• v.3 no.1
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• pp.4-8
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• 2002

The typical mold method for FED (field emission display) fabrication is used to form a gate electrode, a gate oxide layer, and emitter tip after fabrication of a mold shape using wet-etching of Si substrate. However, in this study, new mold method using a side wall space structure was developed to make sharp emitter tips with the gate electrode. In new method, gate oxide layer and gate electrode layer were deposited on a Si wafer by LPCVD (low pressure chemical vapor deposition), and then BPSG (Boro phosphor silicate glass) thin film was deposited. After then, the BPSG thin film was flowed into the mold at high temperature in order to form a sharp mold structure. TiN was deposited as an emitter tip on it. The unfinished device was bonded to a glass substrate by anodic bonding techniques. The Si wafer was etched from backside by KOH-deionized water solution. Finally, the sharp field emitter array with gate electrode on the glass substrate was formed.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.07a
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• pp.461-462
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• 2005

In order to improve the efficiency of dye-sensitized solar cell (DSC), $TiO_2$ electrode screen-printed on transparent conducting oxide (TCO) substrate was sintered in variation with different temperature(350 to $550^{\circ}C$). $TiO_2$ electrode on fluorine doped tin oxide (FTO) glass was assembled with Pt counter electrode on FTO glass. I-V properties of DSC were measured under solar simulator. Also, effect of sintering temperature on surface morphology of $TiO_2$ films was investigated to understand correlation between its surface morphology and sintering temperature. Such surface morphology was observed by atomic force microscopy (AFM). From the measurement results, at sintering temperature of $500^{\circ}C$, both efficiency and fill factor of DSC were mutually complementary, enhancing highest fill factor and efficiency. Consequently, it was considered that optimum sintering temperature of $\alpha$-terpinol included $TiO_2$ paste is at $500^{\circ}C$.

• Korean Journal of Materials Research
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• v.1 no.4
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• pp.229-235
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• 1991

A new electrode material for $Ta_2O_5$ capacitor was developed to obtain both high dielectric constant and improved electrical properties for use in DRAM. High leakage current and low breakdown field of as-deposited $Ta_2O_5$ film on Si is due to the reduction of $Ta_2O_5$ by silicon at $Ta_2O_5$/electrode interface. $Dry-O_2$ anneal improves the electrical properties of $Ta_2O_5$ capacitor with Si electrode, but it thickens the interfacial oxide and lowers the dielectric constant, subsequently. $Ta_2O_5$ capacitor with TiN exectrode shows better electrical properties and higher dielectric constant than post heat treated $Ta_2O_5$ film on Si. No interfacial oxide layer at $Ta_2O_5$/TiN interface suggests that there\`s no Interaction between $Ta_2O_5$ and electrode. TiN is a adequate electrode material for $Ta_2O_5$ capacitor.