• Journal of Electrical Engineering and Technology
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• v.2 no.3
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• pp.408-412
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• 2007

It is almost impossible to secure the reproductibility and stability of a commercial Thick-Film Metal Oxide Semiconductor Gas Sensor since it is very difficult to keep the consistency of the manufacturing environment. Thus it is widely known that the general Semiconductor-Oxide Gas Sensors are not appropriate for precise measurement systems. In this paper, the output characteristic analyzer of the various Thick-Film Metal Oxide Semiconductor Gas Sensors that are used to recognize the air quality within an automobile are proposed and examined. The analyzed output characters in a normal air chamber are grouped by sensor ranks and used to fill out the characteristic table of the Thick-Film Metal Oxide Semiconductor Gas Sensors. The characteristic table is used to determine the rank of the sensor that is equipped in the current air cleaner system of an automobile. The proposed air control system can also adapt the on-demand operation that recognizes the history of the passenger's manual-control.

• KIEE International Transactions on Electrophysics and Applications
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• v.3C no.2
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• pp.55-58
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• 2003

This paper examines the electrical characteristic of single oxide layer due to various diffusion conditions, substrate orientations, substrate resistivity and gas atmosphere in a diffusion furnace. The oxide quality was examined through the capacitance-voltage characteristic due to the annealing time after oxidation process, and the capacitance-voltage characteristics of the single oxide layer by will be described via semiconductor device simulation.

• Journal of Korean Society on Water Environment
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• v.31 no.2
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• pp.209-215
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• 2015

The purpose of this study is to evaluate the characteristic of the iron oxide carrier for removing arsenic contained in the groundwater. 4 types of iron oxide carrier used in the study is iron oxide coated sand carrier (IOCSC), iron oxide coated zeolite carrier (IOCZC), iron oxide plasticity carrier (IOPC) and platinum iron oxide plasticity carrier (PIOPC). The results of this study, IOPC is showed high arsenic adsorption strength and the maximum amount of adsorption than the IOCC. Based on the results of the arsenic adsorption characteristic, by using IOCC was conducted to column test. As a result, PIOPC is showed a high arsenic adsorption amount than IOPC, it was found that the time required to reach the breakthrough point is also extended. Therefore it is determined that stably compliance with water quality standards enhanced drinking water when using the PIOPC.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2013.10a
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• pp.390-392
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• 2013

The research was observed the characteristic of ZnO based oxide semiconductors for the transparent conducting display. The optical-physical properties of ZnO based oxide semiconductors) grown on p-Si wafer were presented. ZnO based oxide semiconductors was prepared by the RF magnetron sputtering system. The characteristic of ZnO based oxide semiconductorswas strongly influenced by the amount of localized electron state by the defects. The PL spectra moved to long wave number with increasing the defects in the film. The mobility of a-IGZO film was increased with increasing the oxygen gas flow rate. The resistivity of ZnO based oxide semiconductors was also related to the mobility of ZnO based oxide semiconductors, and the mobility increased at the sample with low resistivity. The electric characteristic of a-IGZO TFTs showed that it is an n-type semiconductor.

• Transactions of the Society of Information Storage Systems
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• v.8 no.2
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• pp.56-60
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• 2012

Graphene oxide, which is exfoliated by oxidant from graphite, is the material for solving the problem of mass production and positioning. We made graphene oxide based devices by dielectrophoresis, studied and controlled factors which can affect the characteristic of graphene oxide channel. Graphene oxide channel assembled by dielectrophoresis can be constructed differently by various frequency options. We confirmed the change of gate characteristics and I-V characteristics in the range from 80K to 300K temperature.

• Journal of Technologic Dentistry
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• v.35 no.4
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• pp.359-364
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• 2013

Purpose: This study was to observe characteristic of metal oxidation and bonding strength according to composition of Ni-Cr alloy for porcelain fused to metal crown. The three kinds of Ni-Cr alloy with different composition ratio of parent metal were observed general properties and chemical properties of each alloy surface and measured the shear bonding strength between ceramic and each alloys. The aim of study was to suggest the material for design of parent metal's composition ratio to development of alloy for porcelain fused to metal crown. Methods: The three kinds of alloy as test specimen was Ni(59wt%)-Cr(24wt%), Ni(67wt.%)-Cr(16wt.%) alloy and Ni(71wt%)-Cr(12wt%)alloy. The oxide on surface was observed by EDX. And the shear test was performed by MTS. Results: The surface property and oxide characteristic analysis of oxide layer, weight percentage of Element O within $Ni_{59}Cr_{24}$ alloy measured 23.03wt%, $Ni_{67}Cr_{16}$ alloy measured 21.13wt% and $Ni_{71}Cr_{12}$ alloy was measured 48.55wt%. And the maximum shear bonding strength was measured 58.02Mpa between $Ni_{59}Cr_{24}$ alloy and vintage halo(H2 group). Conclusion: The surface property and oxide characteristic three kind of Ni-Cr alloy was similar. and shear bonding strength showed the highest bonding strength in H2 specimens.

• Journal of Technologic Dentistry
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• v.35 no.2
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• pp.105-112
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• 2013

Purpose: This study was to analyze the castability, surface oxide characteristic of Co-Cr alloy for porcelain fused to metal crown and the bonding strength of porcelain fused to metal crown. Co-Cr and Ni-Cr alloy for porcelain fused to metal crown was used for tests of the castability and surface oxide state and shear bonding strength by various porcelain. The aim of this study was to suggest the differences of result according to Co-Cr and Ni-Cr alloy. Methods: The kinds of alloy as test specimen was Co-Cr and Ni-Cr alloy. The castability index on the alloy specimens. The surfaces of two alloys were analyzed by SEM and EDX in order to observe oxide characteristic. And the shear test was performed by MTS. Results: The castability index of Co-Cr alloy was 96.8% and Ni-Cr alloy was 94.4%. The strongest bonding strength of Co-Cr alloy was shown 67.37 MPa. Conclusion: The shear bonding strength between Co-Cr alloy and EX3 porcelain was the strongest comparing with others. And all of each alloy was indicated as same level about the castability.

• Journal of Technologic Dentistry
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• v.35 no.4
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• pp.353-358
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• 2013

Purpose: This study was observation shear bonding strength by compositional change and firing step of a Ni-Cr alloy for porcelain fused metal crown. The aim of study was to suggest the material for firing step of Ni71-Cr14 alloy to development of alloy for porcelain fused to metal crown. Methods: The test was on the two kinds of Ni-Cr alloy specimens. The surfaces of two alloys were analyzed by EDX in order to observe oxide characteristic. And the shear test was performed by MTS. Results: The surface property and oxide characteristic analysis of oxide layer, weight percentage of Element O within $Ni_{71}Cr_{14}$ alloy measured 23.32wt%, and $Ni_{59}Cr_{24}$ alloy was measured 23.03wt%. And the maximum shear bonding strength was measured 58.02MPa between $Ni_{59}Cr_{24}$ alloy and vintage halo(H4 group). Conclusion: The surface property and oxide characteristic three kind of Ni-Cr alloy was similar. and shear bonding strength showed the highest bonding strength in H4 specimens.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2003.05a
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• pp.2-2
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• 2003

• Journal of the Korean Institute of Telematics and Electronics
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• v.23 no.1
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• pp.65-73
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• 1986

Experiment have been conducted about thin oxide characteristics according to O2/N2 ratio needed for EEPROM cell fabrication. As a result, we think that there is no problem even if we grow oxide layer with large O2/N2 ratio and short exidation time and when the water is implated by As before oxidation, the oxide breakdown field is about IMV/cm lower than that is not implanted. Especially, the thin oxide characteristic seems to be affected largely by wafer cleaning and oxidation in air. On the basis of these, tunnel type EEPROM cell is fabricated by 3um CMOS process and its characteristic is studied. Tunnel oxide thickness(100\ulcorner is chosen to allow Fowler-Nordheim tunneling to charge the floating gate at the desired programming voltage and tunnel area(2x2um\ulcorneris chosen to increase capacitive coupling ratio. For program operation, high voltage (20-22V) is applied to the control gate, while both drain and source are gdrounded. The drain voltage for erase is 16V. It is shown that charge retention characteristics is not limited by leakage in the oxide and program/erase endurance is over 10E4 cycles of program erase operation.