• Bulletin of the Korean Chemical Society
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• v.14 no.3
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• pp.344-347
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• 1993

• Proceedings of the IEEK Conference
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• 2002.07a
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• pp.365-368
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• 2002

We investigated the influence of RTP annealing of multi-layered metal films deposited on oxides layer. Two types of oxides, BPSG and P-7205, were used as a bottom layer under multi-layered metal film. The bonding was not good in metal/BPSG/Si samples because adhesion between metal layer and BPSG oxide layer was poor by interfacial reaction during RTP annealing above 650$^{\circ}C$. On the other hand bonding was always good in metal/ P-TEOS /Si samples regardless of annealing temperature. We observed the interface between oxide and metal layers using AES and TEM. The phosphorus and oxygen profile in interface between metal and oxide layers were different in metal/BPSG/Si and metal/P-TEOS/Si samples. We have known that the properties of interface was improved in metal/BPSG/Si samples when the sample was annealed below 650$^{\circ}C$.

• Proceedings of the KIEE Conference
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• 1996.07c
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• pp.1988-1990
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• 1996

In this work, we have grown or evaporated thermal oxide and E-beam oxide on the (100) oriented n-type silicon wafers, respectively and they were directly bonded with another silicon wafer after hydrophilization using solutions of three types of $HNO_3$, $H_{2}SO_{4}$ and $NH_{4}OH$. Changes of average surface roughness after hydrophilizations of the single crystalline silicon wafer, thermal oxide and E-beam evaporated silicon oxide were studied using atomic force microscope. Bonding interfaces of the bonded pairs were inspected using scanning electron microscope. Void and non-contact area of the bonded pairs were also inspected using infrared transmission microscope.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11a
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• pp.17-20
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• 2001

Nonvolatile semiconductor memory devices with reoxidized nitrided oxide(RONO) gate dielectric were fabricated, and nitrogen distribution and bonding species which contributing memory characteristics were analyzed. Also, memory characteristics of devices according to anneal temperatures were investigated. The devices were fabricated by 0.35$\mu\textrm{m}$ retrograde twin well CMOS processes. The processes could be simple by in-situ process of nitridation anneal and reoxidation. The nitrogen distribution and bonding state of gate dielectric were investigated by Dynamic Secondary Ion Mass Spectrometry(D-SIMS), Time-of-Flight Secondary ton Mass Spectrometry(ToF-SIMS), and X-ray Photoelectron Spectroscopy(XPS). Nitrogen concentrations are proportional to nitridation anneal temperatures and the more time was required to form the same reoxidized layer thickness. ToF-SIMS results show that SiON species are detected at the initial oxide interface and Si$_2$NO species near the new Si-SiO$_2$ interface that formed after reoxidation. As the anneal temperatures increased, the device showed worse retention and degradation properties. These could be said that nitrogen concentration near initial interface is limited to a certain quantity, so excess nitrogen are redistributed near the Si-SiO$_2$ interface and contributed to electron trap generation.

• The Journal of Korean Academy of Prosthodontics
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• v.34 no.3
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• pp.620-631
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• 1996

Bonding of resin to cast alloy has traditionally been provided by mechanical retention. But, chemical bonding methods such as silicoating, tin plating, heat treatment, application of 4-META adhesives, have been developed to overcome the problems of the mechanical bonding methods. Silicoating has been used availaby in fixed prosthodontics, but is also reported to be used in removable prosthodontics. The aim of this study is to measure the tensile bond strength between resin and metal, and compare the effect of the type of metal and the grain size of the aluminum oxide on the bond strength, after metal surface roughening, coating of the opaque resin, and curing of heat-curing resin were performed. The test groups were divided into 4 groups according to the cast alloys and the aluminum oxide particles used. Group 1 : Type 4 gold alloy(DM66) blasted with $$50{\mu}m\;Al_{2}O_3$$ Group 2 : Type 4 gold alloy(DM66) blasted with $$250{\mu}m\;Al_{2}O_3$$, Group 3 : Co-Cr alloy(Nobilium) blasted with $$50{\mu}m\;Al_{2}O_3$$ Group 4 : Co-Cr alloy(Nobilium) blasted with $$250{\mu}m\;Al_{2}O_3$$ * 10 test specimens were made on each group. The specimens were thermocycled, and Instron Universal testing machine was used to measure the tensile bond strength of the finished specimens. The results were as follows : 1. Bond strengths showed that the group of gold alloy blasted with $250{\mu}m$ aluminum oxide particle had higher bond strength, and the group of gold alloy blasted with $50{\mu}m$ aluminum oxide particles had lower bond strength than any of the other groups. 2. Gold alloy had significantly higher bond strength when blasted with $250{\mu}m$ aluminum oxide particles than $50{\mu}m$, but. Co-Cr alloy showed no statistically significant difference between the two particle sizes. 3. When blasted with $50{mu}m$ aluminum oxide particles, Co-Cr alloy showed significantly higher bond strength than gold alloy. And, when blasted with $250{\mu}m$ aluminum oxide particles, gold alloy had significantly higher bond strength than Co-Cr alloy. 4. On the examination of the fractured sites, only the group of Co-Cr alloy blasted with $50{\mu}m$ aluminum oxide particles showed a part of residual opaque resin, but all the samples of the other groups fractured between the resin and the metal.

• Korean Journal of Materials Research
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• v.12 no.2
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• pp.117-120
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• 2002

We investigated the possibility of direct bonding of the Si ∥SiO$_2$/Si$_3$N$_4$∥Si wafers for Oxide-Nitride-Oxide(ONO) gate oxide applications. 10cm-diameter 2000$\AA$-thick thermal oxide/Si(100) and 500$\AA$-Si$_3$N$_4$LPCVD/Si (100) wafers were prepared, and wet cleaned to activate the surface as hydrophilic and hydrophobic states, respectively. Cleaned wafers were premated wish facing the mirror planes by a specially designed aligner in class-100 clean room immediately. Premated wafer pairs were annealed by an electric furnace at the temperatures of 400, 600, 800, 1000, and 120$0^{\circ}C$ for 2hours, respectively. Direct bonded wafer pairs were characterized the bond area with a infrared(IR) analyzer, and measured the bonding interface energy by a razor blade crack opening method. We confirmed that the bond interface energy became 2,344mJ/$\m^2$ when annealing temperature reached 100$0^{\circ}C$, which were comparable with the interface energy of homeogenous wafer pairs of Si/Si.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11b
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• pp.17-20
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• 2001

Nonvolatile semiconductor memory devices with reoxidized nitrided oxide(RONO) gate dielectrics were fabricated, and nitrogen distribution and bonding species which contribute to memory characteristics were analyzed. Also, memory characteristics of devices depending on the anneal temperatures were investigated. The devices were fabricated by retrograde twin well CMOS processes with $0.35{\mu}m$ Nonvolatile semiconductor memory devices with reoxidized nitrided oxide(RONO) gate dielectric were fabricated, and nitrogen distribution and bonding species which contributing memory characteristics were analyzed. Also, memory characteristics of devices according to anneal temperatures were investigated. The devices were fabricated by $0.35{\mu}m$ retrograde twin well CMOS processes. The processes could be simple by in-situ process of nitridation anneal and reoxidation. The nitrogen distribution and bonding state of gate dielectric were investigated by Dynamic Secondary Ion Mass Spectrometry(D-SIMS), Time-of-Flight Secondary Ion Mass Spectrometry(ToF-SIMS), and X-ray Photoelectron Spectroscopy(XPS). Nitrogen concentrations are proportional to nitridation anneal temperatures and the more time was required to form the same reoxidized layer thickness. ToF-SIMS results show that SiON species are detected at the initial oxide interface and $Si_{2}NO$ species near the new $Si-SiO_{2}$ interface that formed after reoxidation. As the anneal temperatures increased, the device showed worse retention and degradation properties. These could be said that nitrogen concentration near initial interface is limited to a certain quantity, so excess nitrogen are redistributed near the $Si-SiO_{2}$ interface and contributed to electron trap generation.

• Korean Journal of Materials Research
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• v.16 no.10
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• pp.652-655
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• 2006

A direct wafer bonding process necessary for GaAs-on-insulator (GOI) fabrication with high thermal annealing temperatures was studied by using PECVD oxides between gallium arsenide and silicon wafers. In order to apply some uniform pressure on initially-bonded wafer pairs, a graphite sample holder was used for wafer bonding. Also, a tool for measuring the tensile forces was fabricated to measure the wafer bonding strengths of both initially-bonded and thermally-annealed samples. GaAs/$SiO_2$/Si wafers with 0.5-$\mu$m-thick PECVD oxides were annealed from $100^{\circ}C\;to\;600^{\circ}C$. Maximum bonding strengths of about 84 N were obtained in the annealing temperature range of $400{\sim}500^{\circ}C$. The bonded wafers were not separated up to $600^{\circ}C$. As a result, the GOI wafers with high annealing temperatures were demonstrated for the first time.

• Journal of the Korean institute of surface engineering
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• v.54 no.5
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• pp.207-212
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• 2021

The mechanical and electrical characteristics can be improved in 3D stacked IC technology which can accomplish the ultra-high integration by stacking more semiconductor chips within the limited package area through the Cu direct bonding method minimizing the performance degradation to the bonding surface to the inorganic compound or the oxide film etc. The surface was treated in a ultrasonic washer using a diamond abrasive to remove other component substances from the prepared cast plate substrate surface. FE-SEM was used to analyze the bonding characteristics of the bonded copper substrates, and the cross section of the bonded Cu conjugates at the sintering junction temperature of 100 ℃, 150 ℃, 200 ℃, 350 ℃ and the pressure of 2303 N/cm² and 3087 N/cm². At 2303 N/cm², the good bonding of copper substrate was confirmed at 350 ℃, and at the increased pressure of 3087 N/cm², the bonding condition of Cu was confirmed at low temperature junction temperature of 200 ℃. However, the recrystallization of Cu particles was observed due to increased pressure of 3087 N/cm² and diffusion of Cu atoms at high temperature of 350 ℃, which can lead to degradation in semiconductor manufacturing.

• Journal of the Microelectronics and Packaging Society
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• v.22 no.1
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• pp.35-41
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• 2015

In this study, in order to improve the reliability of ACF interconnections, solder ACF joints were investigated interms of solder joint morphology and solder wetting areas, and evaluated the electrical properties of Flex-on-Board (FOB) interconncections. Solder ACF joints with the ultrasonic bonding method showed excellent solder wetting by broken solder oxide layers on solder surfaces compared with solder joints with remaining solder oxide layer bonded by the conventional thermo-compression (TC) bonding method. When higher target temperature was used, Sn58Bi solder joints showed concave shape due to lower degree of cure of resin at solder MP by higher heating rate. ACFs with epoxy resins and SAC305 solders showed lower degree of resin cure at solder MP due to the slow curing rate resulting in concave shaped solder joints. In terms of solder wetting area, solder ACFs with $25-32{\mu}m$ diameters and 30-40 wt% showed highest wetted solder areas. Solder ACF joints with the concave shape and the highest wetting area showed lower contact resistances and higher reliability in PCT results than conventional ACF joints. These results indicate that solder morphologies and wetting areas of solder ACF joints can be controlled by adjustment of bonding conditions and material properties of solder and polymer resin to improve reliability of ACF joints.