• Proceedings of the KIEE Conference
• /
• 1997.11a
• /
• pp.692-696
• /
• 1997

본 연구에서는 BJT(Bipolar Junction Transistor)와 MOSFET (Metal Oxide Semiconductor Field Effect Transistor) 등을 1MeV에너지의 전자빔을 선량을 변화시켜가며 조사시켜 그 특성 변화를 분석하였다. BJT에 대해서는 조사 전, 후의 전류 이득의 측정을 통해 base 에서의 minority-carrie의 수명 변화에 의해서 전류 이득이 감소하는 것으로 나타났으며, MOSFET의 경우는 oxide 지역의 전하량 변화에 의해서 문턱 전압이 영향을 받음을 확인할 수 있었다. BJT의 minority-carrier의 수명 감소량은 조사 선량이 증가함에 따라 직선적으로 변화함을 알 수 있었고, MOSFET의 문턱 전압의 변화는 nMOS와 pMOS의 경우 서로 다름을 관찰할 수 있었는데 이는 oxide내에서 발생하는 전하에 의해 차이가 남을 알 수 있었다.

• Journal of the Semiconductor & Display Technology
• /
• v.16 no.1
• /
• pp.52-58
• /
• 2017

Graphene oxide (GO)/carboxylated styrene-butadiene rubber (XSBR) nanocomposites with various contents of GO were prepared by a latex compounding method. It has been confirmed that the functional groups of GO and the hydrogen bonds between GO and XSBR are existed. It can be seen that the scorch time ($t_{s2}$), which is the measurement of incipient vulcanization of rubber, showed a delay after the addition of GO. Field emission scanning electron microscopy was employed to confirm the uniform dispersion of filler in the matrix. Indeed, with increasing fillers loading, the torque, tensile strength, thermal stability and crosslink density of obtained nanocomposites were improved. These results were correlated to the better dispersion of fillers through the rubber matrix.

• Proceedings of the Korean Institute of Surface Engineering Conference
• /
• 2013.05a
• /
• pp.102-103
• /
• 2013

As an important p-type semiconductor metal oxide with a narrow band gap (1.2 - 2.6eV), copper oxide (Cu2O) has been studied because of its various applications as material for heterogeneous catalysts, gas sensors, optical switch, lithium-ion electrode materials, field emission devices, solar cells. The fundamental properties of oxide-semiconductor can be greatly affected by the surface morphology, size, geometry and spatial orientation.

• 한국정보디스플레이학회:학술대회논문집
• /
• 2007.08a
• /
• pp.190-192
• /
• 2007

A neutral beam system has been developed to produce hyperthermal neutral beams composed of indium, tin, and oxygen atoms. Using these hyper thermal neutral beams with energies in the range of tens of eV, high quality indium-tin oxide (ITO) thin films have been obtained on glass substrates at room temperature. The optical transmittance of the films is higher than 85% at a wavelength of 550 nm and the electrical resistivity is lower than $1{\times}10^{-3}{\Omega}cm$.

• ETRI Journal
• /
• v.35 no.4
• /
• pp.617-624
• /
• 2013

Low power consuming and highly responsive semiconductor-type microelectromechanical systems (MEMS) gas sensors are fabricated for real-time environmental monitoring applications. This subsystem is developed using a gas sensor module, a Bluetooth module, and a personal digital assistant (PDA) phone. The gas sensor module consists of a $NO_2$ or CO gas sensor and signal processing chips. The MEMS gas sensor is composed of a microheater, a sensing electrode, and sensing material. Metal oxide nanopowder is drop-coated onto a substrate using a microheater and integrated into the gas sensor module. The change in resistance of the metal oxide nanopowder from exposure to oxidizing or deoxidizing gases is utilized as the principle mechanism of this gas sensor operation. The variation detected in the gas sensor module is transferred to the PDA phone by way of the Bluetooth module.

• Journal of the Semiconductor & Display Technology
• /
• v.19 no.2
• /
• pp.55-59
• /
• 2020

Copper Oxide (CuO) films were deposited on the n-type silicon wafer by rf magnetron sputtering for heterojunction solar cells. And then the samples were treated as a function of the annealing temperature (300-600℃) in a vacuum. Their electrical, optical and structural properties of the fabricated heterojunction solar cells were then investigated and the power conversion efficiencies (PCE) of the fabricated p-type copper oxide/n-type Si heterojunction cells were measured using solar simulator. After being treated at temperature of 500℃, the solar cells with CuO film have PCE of 0.43%, Current density of 5.37mA/㎠, Fill Factor of 39.82%.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.24 no.9
• /
• pp.710-712
• /
• 2011

In this study, we fabricate resistive switching random access memory (ReRAM) devices constructed with a Al/$HfO_2$/ITO structure on glass substrates and investigate their memory characteristics. The hafnium oxide thin film used as a resistive switching layer is sputtered at room temperature in a sputtering system with a cooling unit. The Al/$HfO_2$/ITO device exhibits bipolar resistive switching characteristics, and the ratio of the high resistance (HRS) to low resistance states (LRS) is more than 60. In addition, the resistance ratio maintains even after $10^4$ seconds.

• Proceedings of the Korean Nuclear Society Conference
• /
• 1997.05b
• /
• pp.401-406
• /
• 1997

This paper presents preliminary results on the degradation of BJTs(Bipolar Junction Transistors) and MOSFETs(Metal Oxide Semiconductor Field Effect Transistors) by 1MeV electron beam. Exposure experimental results show that the change of minority-carrier life time in base region dominates the behavior of BJTs and that the buildup of charges in oxide region can affect the value of threshold voltage for MOSFETs. It was possible to correlate the decrease of the minority-carrier life time of BJTs with irradiation dose, while the shift of MOSFETs' threshold voltage was not only a function of charge buildup in oxide region.

• Journal of the Semiconductor & Display Technology
• /
• v.20 no.2
• /
• pp.87-91
• /
• 2021

Various Cu ions are discharged into water from various industries, which results in a severe trouble for groundwater, soil, air, and eventually animals and humans. In this work, graphene oxide (GO) is introduced as a Cu removal absorber and the real-time monitoring method is demonstrated. The results show that GO is a very effective material to absorb Cu ions in the solution. In addition, the residual Cu ions in the solution is monitored via optical transmittance method, which well match with Inductively Coupled Plasma Mass Spectrometer (ICP-MS) analysis.

• Journal of the Semiconductor & Display Technology
• /
• v.20 no.4
• /
• pp.1-5
• /
• 2021

Field-effect transistors based on solution-processed metal oxide semiconductors has attracted huge attention due to their intrinsic characteristics of optical and electrical characteristics with benefits of simple and low-cost process. Especially, spray-pyrolysis has shown excellent device performance which compatible to vacuum-processed Field-effect transistors. However, the high annealing temperature for crystallization of MOS and narrow range of precursors has impeded the progress of the technology. Here, we demonstrated the nc-ZnO/ZnO films performed by spray-pyrolysis with incorporating ZnO nanoparticles into typical ZnO precursor. The films exhibit preserving morphological properties of poly-crystalline ZnO and enhanced electrical characteristics with potential for low-temperature processability. The influence of nanoparticles within the film was also researched for realizing ZnO films providing good quality of performance.