• 한국전자통신학회논문지
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• 제12권5호
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• pp.791-796
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• 2017

본 연구에서는 DRAM 커패시터의 유전막 박막화를 위한 Load Lock(L/L) LPCVD 시스템을 이용한 적층형 커패시터의 제조 공정이 셀 커패시턴스에 미치는 영향을 조사하였다. 그 결과 기존의 non-L/L 장치에 비하여 약 $6{\AA}$의 산화막 유효두께를 낮춤으로 커패시턴스로 환산 시 약 3-4 fF의 차이가 나타남을 확인할 수 있었다. 또한 절연막으로써 질화막 두께의 측정 범위가 정상적인 관리 범위의 분포임에도 불구하고 Cs는 계산치보다 약 3~6 fF 정도 낮은 것으로 확인되었다. 이는 node poly FI CD가 spec 상한치로 관리되어 셀 표면적의 감소를 초래하였고 이는 약 2fF의 Cs 저하를 나타내었다. 따라서 안정적인 Cs의 확보를 위해서는 절연막의 두께 및 CD 관리를 spec 중심값의 10 % 이내로 관리할 필요가 있음을 확인하였다.

• 센서학회지
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• 제13권5호
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• pp.323-328
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• 2004

N-type semi-conducting oxides such as $SnO_{2}$, ZnO, and $ZrO_{2}$ have been known for the detecting materials of inflammable or toxic gases. Of those materials, $SnO_{2}$-based sensors are well known as high sensitive materials to detect toxic gases. And the sensitivity is improved if catalysts are added. Detecting toxic gases, especially DMMP (di-methyl-methyl-phosphonate) and DPGME (Dipropylene glycol methyl ether), was performed by a mixture of Tin oxide ($SnO_{2}$) and Zirconia ($ZrO_{2}$). The films consist of each three different mass% of Zr (from 1 mass% to 5 mass%), and they were tested by XRD, SEM, TEM, BET. Nano-structure, pore and particle size was controlled to verify the sensor's sensing mechanism. The sensors was evaluated at five different degrees (from $200^{\circ}C$ to $400^{\circ}C$) and three different concentrations (from 500 ppb to 1500 ppb). The sensors had good sensitivity of both simulants, and high selectivity of DMMP.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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• pp.319-319
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• 2013

Even though the fabrication methods of metal oxide based thin film capacitor have been well established such as RF sputtering, Sol-gel, metal organic chemical vapor deposition (MOCVD), ion beam assisted deposition (IBAD) and pulsed laser deposition (PLD), an applicable capacitor of printed circuit board (PCB) has not realized yet by these methods. Barium Strontium Titanate (BST) and other high-k ceramic oxides are important materials used in integrated passive devices, multi-chip modules (MCM), high-density interconnect, and chip-scale packaging. Thin film multi-layer technology is strongly demanded for having high capacitance (120 nF/$mm^2$). In this study, we suggest novel multi-layer thin film capacitor design and fabrication technology utilized by plasma assisted deposition and photolithography processes. Ba0.6Sr0.4TiO3 (BST) was used for the dielectric material since it has high dielectric constant and low dielectric loss. 5-layered BST and Pt thin films with multi-layer sandwich structures were formed on Pt/Ti/$SiO_2$/Si substrate by RF-magnetron sputtering and DC-sputtering. Pt electrodes and BST layers were patterned to reveal internal electrodes by photolithography. SiO2 passivation layer was deposited by plasma-enhanced chemical vapor deposition (PE-CVD). The passivation layer plays an important role to prevent short connection between the electrodes. It was patterned to create holes for the connection between internal electrodes and external electrodes by reactive-ion etching (RIE). External contact pads were formed by Pt electrodes. The microstructure and dielectric characteristics of the capacitors were investigated by scanning electron microscopy (SEM) and impedance analyzer, respectively. In conclusion, the 0402 sized thin film multi-layer capacitors have been demonstrated, which have capacitance of 10 nF. They are expected to be used for decoupling purpose and have been fabricated with high yield.

• Current Photovoltaic Research
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• 제5권2호
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• pp.63-67
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• 2017

Aluminum oxide ($Al_2O_3$) film deposited by atomic layer deposition (ALD) is known to supply excellent surface passivation properties on crystalline Si surface. The quality of passivation layer is important for high-efficiency silicon solar cell. double-layer structures have many advantages over single-layer materials. $Al_2O_3/SiN_X$ passivation stacks have been widely adopted for high- efficiency silicon solar cells. The first layer, $Al_2O_3$, passivates the surface, while $SiN_X$ acts as a hydrogen source that saturates silicon dangling bonds during annealing treatment. We explored the properties on passivation film of $Al_2O_3/SiN_X$ stack layer with changing the conditions. For the post annealing temperature, it was found that $500^{\circ}C$ is the most suitable temperature to improvement surface passivation.

• 센서학회지
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• 제10권3호
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• pp.173-179
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• 2001

현재 사용되어지는 반도체형 압력센서에는 압저항형과 용량형이 있다. 특히 반도체 마이크로 압력센서는 크기도 작고 신호처리회로를 동일칩 위에 집적화 할 수 있어 많은 관심을 모아왔다. 그러나 이러한 형태의 센서들은 제조공정이 복잡해서 생산성이 낮다. 기존의 센서들이 가지는 단점들을 극복하기 위해 새로운 형태의 FET형 압력센서(PSFET : pressure sensitive field effect transistor)를 제안하고 그 동작특성을 조사하였다. 압력 감지 물질은 PZT(Pb(Zr,Ti)$O_3$)를 사용하였다. RF 마그네트론 스퍼터링법을 사용하여 MOSFET의 게이트 절연막 위에 PZT 압전 박막을 증착하였다. PZT의 안정적 상태인 perovskite 구조를 형성하기 위하여 PbO 분위기에서 열처리하는 기법을 도입하였다. 제작된 PSFET의 감도는 0.38 mV/mmHg이다.

• Environmental Engineering Research
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• 제16권4호
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• pp.187-203
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• 2011

Chlorophenols (CPs) are widely used industrial chemicals that have been identified as being toxic to both humans and the environment. Zero valent iron (ZVI) and iron based bimetallic systems have the potential to efficiently dechlorinate CPs. This paper reviews the research conducted in this area over the past decade, with emphasis on the processes and mechanisms for the removal of CPs, as well as the characterization and role of the iron oxides formed on the ZVI surface. The removal of dissolved CPs in iron-water systems occurs via dechlorination, sorption and co-precipitation. Although ZVI has been commonly used for the dechlorination of CPs, its long term reactivity is limited due to surface passivation over time. However, iron based bimetallic systems are an effective alternative for overcoming this limitation. Bimetallic systems prepared by physically mixing ZVI and the catalyst or through reductive deposition of a catalyst onto ZVI have been shown to display superior performance over unmodified ZVI. Nonetheless, the efficiency and rate of hydrodechlorination of CPs by bimetals depend on the type of metal combinations used, properties of the metals and characteristics of the target CP. The presence and formation of various iron oxides can affect the reactivities of ZVI and bimetals. Oxides, such as green rust and magnetite, facilitate the dechlorination of CPs by ZVI and bimetals, while oxide films, such as hematite, maghemite, lepidocrocite and goethite, passivate the iron surface and hinder the dechlorination reaction. Key environmental parameters, such as solution pH, presence of dissolved oxygen and dissolved co-contaminants, exert significant impacts on the rate and extent of CP dechlorination by ZVI and bimetals.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2011년도 춘계학술발표대회
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• pp.34.2-34.2
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• 2011

The demand for Ru has been increasing in the electronic, chemical and semiconductor industry. Chemical mechanical planarization (CMP) is one of the fabrication processes for electrode formation and barrier layer removal. The abrasive particles can be easily contaminated on the top surface during the CMP process. This can induce adverse effects on subsequent patterning and film deposition processes. In this study, a post Ru CMP cleaning solution was formulated by using sodium periodate as an etchant and citric acid to modify the zeta potential of alumina particles and Ru surfaces. Ru film (150 nm thickness) was deposited on tetraethylorthosilicate (TEOS) films by the atomic layer deposition method. Ru wafers were cut into $2.0{\times}2.0$ cm pieces for the surface analysis and used for estimating PRE. A laser zeta potential analyzer (LEZA-600, Otsuka Electronics Co., Japan) was used to obtain the zeta potentials of alumina particles and the Ru surface. A contact angle analyzer (Phoenix 300, SEO, Korea) was used to measure the contact angle of the Ru surface. The adhesion force between an alumina particle and Ru wafer surface was measured by an atomic force microscope (AFM, XE-100, Park Systems, Korea). In a solution with citric acid, the zeta potential of the alumina surface was changed to a negative value due to the adsorption of negative citrate ions. However, the hydrous Ru oxide, which has positive surface charge, could be formed on Ru surface in citric acid solution at pH 6 and 8. At pH 6 and 8, relatively low particle removal efficiency was observed in citric acid solution due to the attractive force between the Ru surface and particles. At pH 10, the lowest adhesion force and highest cleaning efficiency were measured due to the repulsive force between the contaminated alumina particle and the Ru surface. The highest PRE was achieved in citric acid solution with NaIO4 below 0.01 M at pH 10.

• Macromolecular Research
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• 제13권2호
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• pp.114-119
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• 2005

We synthesized two new series of alternating copolymers, poly[bis(2-(4-phenylenevinylene)-2-cyanoethenyl)-9,9-dihexyl-9H-fluoren-2,7-yl-alt-1,4-phenylene](Polymer-I)and poly[bis(2-(4-phenylenevinylene)-2­cyanoethenyl)-9,9-dihexyl-9H-fluoren-2,7-yl-alt-2,7-(9,9-dihexylfluorene)](Polymer-II), via the Suzuki coupling reaction, for use in light-emitting diodes (LEDs). Defect-free uniformly thin films of these polymers were found to be easily formed on indium-tin oxide (ITO) coated glass substrates. Multi-layer LEDs with ITO/PEDOT/Polymer/ LiF/Al configurations with or without an $Alq_3$ electron transport layer were fabricated with these polymers. The maximum EL emissions of Polymer-I and Polymer-II with an $Alq_3/LiF/Al$ cathode were observed at 516 and 533 nm, respectively. The maximum brightness and external luminance efficiency of the devices fabricated with the EL polymers were found to be $411 cd/m^2$ and 0.16 cd/A, respectively.

• 폴리머
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• 제38권4호
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• pp.525-529
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• 2014

반도체 특성을 가지는 금속산화물이 포함된 poly(3,4-ethylenedioxythiophene)(PEDOT)-$TiO_2$ 하이브리드 전도성 박막을 동시-기상중합법을 이용하여 성공적으로 제조하였다. PEDOT-$TiO_2$ 박막은 PEDOT 박막에 비하여 내스크래치성, 연필경도와 같은 기계적 물성과 전기/광학적 특성을 향상시킬 수 있었다. 동시-기상중합으로 제조된 하이브리드 박막은 FTS 산화제에 의한 졸-젤 반응으로 물리화학적으로 안정한 가교구조의 $TiO_2$ 층이 균일하게 형성되어 PEDOT 박막자체의 전기/광학적 손실을 수반하지 않고 기계적 물성을 높일 수 있었다. 동시-기상중합을 통하여 제조된 하이브리드 박막은 PEDOT 박막에 비하여 평탄한 표면구조를 가졌으며, 이로 인하여 상대적으로 높은 전기전도도를 가진다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 1996년도 제11회 학술발표회 논문개요집
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• pp.40-41
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• 1996

Nitridation technique has been receiving much attention for the formation of a thin nitrided buffer layer on which high quality nitride films can be formedl. Particularly, gallium nitride (GaN) has been considered as a promising material for blue-and ultraviolet-emitting devices. It can also be used for in situ formed and stable passivation layers for selective growth of $GaAs_2$. In this work, formation of a thin nitrided layer is investigated. Nitrogen electron cyclotron resonance(ECR)-plasma is employed for the formation of thin nitrided layer. The plasma source used in this work is a compact ECR plasma gun3 which is specifically designed to enhance control, and to provide in-situ monitoring of plasma parameters during plasma-assisted processing. Microwave power of 100-200 W was used to excite the plasma which was emitted from an orifice of 25 rnm in diameter. The substrate were positioned 15 em away from the orifice of plasma source. Prior to nitridation is performed, the surface of n-type (001)GaAs was exposed to hydrogen plasma for 20 min at $300{\;}^{\circ}C$ in order to eliminate a native oxide formed on GaAs surface. Change from ring to streak in RHEED pattern can be obtained through the irradiation of hydrogen plasma, indicating a clean surface. Nitridation was carried out for 5-40 min at $RT-600{\;}^{\circ}C$ in a ECR plasma-assisted molecular beam epitaxy system. Typical chamber pressure was $7.5{\times}lO^{-4}$ Torr during the nitridations at $N_2$ flow rate of 10 seem.(omitted)mitted)