• Title/Summary/Keyword: Oxide Films

Search Result 2,388, Processing Time 0.03 seconds

The Fabrication of Porous Nickel Oxide Thin Film using Anodization Process for an Electrochromic Device

  • Lee, Won-Chang;Choe, Eun-Chang;Hong, Byeong-Yu
    • Proceedings of the Korean Vacuum Society Conference
    • /
    • 2016.02a
    • /
    • pp.407.1-407.1
    • /
    • 2016
  • Electrochromism is defined as a phenomenon which involves persistently repeated change of optical properties between bleached state and colored state by simultaneous injection of electrons and ions, sufficient to induce an electrochemical redox process. Due to this feature, considerable progress has been made in the synthesis of electrochromic (EC) materials, improvements of EC properties in EC devices such as light shutter, smart window and variable reflectance mirrors etc. Among the variable EC materials, solid-state inorganics in particular, metal oxide semiconducting materials such as nickel oxide (NiO) have been investigated extensively. The NiO that is an anodic EC material is of special interest because of high color contrast ratio, large dynamic range and low material cost. The high performance EC devices should present the use of standard industrial production techniques to produce films with high coloration efficiency, rapid switching speed and robust reversibility. Generally, the color contrast and the optical switching speed increase drastically if high surface area is used. The structure of porous thin film provides a specific surface area and can facilitate a very short response time of the reaction between the surface and ions. The large variety of methods has been used to prepare the porous NiO thin films such as sol-gel process, chemical bath deposition and sputtering. Few studies have been reported on NiO thin films made by using sol-gel method. However, compared with dry process, wet processes that have the questions of the durability and the vestige of bleached state color limit the thin films practical use, especially when prepared by sol-gel method. In this study, we synthesis the porous NiO thin films on the fluorine doped tin oxide (FTO) glass by using sputtering and anodizing method. Also we compared electrical and optical properties of NiO thin films prepared by sol gel. The porous structure is promised to be helpful to the properties enhancement of the EC devices.

  • PDF

Annealing Effect on Adhesion Between Oxide Film and Metal Film (산화막위에 증착된 금속박막과 산화막과의 계면결합에 영향 미치는 열처리 효과)

  • Kim Eung Soo
    • Journal of the Institute of Electronics Engineers of Korea SD
    • /
    • v.41 no.1
    • /
    • pp.15-20
    • /
    • 2004
  • The interfacial layer between the oxide film and the metal film according to RTP annealing temperature of metal film has been studied. Two types of oxides, BPSG and PETEOS, were used as a bottom layer under multi-layered metal films. We observed the interface between oxide and metal films using SEM (scanning electron microscopy), TEM (transmission electron microscopy), AES (auger electron spectroscopy). Bonding failure was occurred by interfacial reaction between the BPSG oxide and the multi-layered metal films above $650^{\circ}C$ RTP anneal. The phosphorus accumulation layer was observed at interface between BPSG oxide and metal films by AES and TEM measurements. On the other hand, bonding was always good in the sample using PETEOS oxide as a bottom layer. We have known that adhesion between BPSG and multi-layered metal films was improved when the sample was annealed below $650^{\circ}C$.

Electrodeposition of Mn-Ni Oxide/PEDOT and Mn-Ni-Ru Oxide/PEDOT Films on Carbon Paper for Electro-osmotic Pump Electrode

  • Baek, Jaewook;Shin, Woonsup
    • Journal of Electrochemical Science and Technology
    • /
    • v.9 no.2
    • /
    • pp.93-98
    • /
    • 2018
  • $MnO_2$, a metal oxide used as an electrode material in electrochemical capacitors (EDLCs), has been applied in binary oxide and conducting polymer hybrid electrodes to increase their stability and capacitance. We developed a method for electrodepositing Mn-Ni oxide/PANI, Mn-Ni oxide/PEDOT, and Mn-Ni-Ru oxide/PEDOT films on carbon paper in a single step using a mixed bath. Mn-Ni oxide/PEDOT and Mn-Ni-Ru oxide/PEDOT electrodes used in an electro-osmotic pump (EOP) have shown better efficiency compared to Mn-Ni oxide and Mn-Ni oxide/PANI electrodes through testing in water as a pumping solution. EOP using a Mn-Ni-Ru oxide/PEDOT electrode was also tested in a 0.5 mM $Li_2SO_4$ solution as a pumping solution to confirm the effect of the $Li^+$ insertion/de-insertion reaction of Ruthenium oxide on the EOP. Experimental results show that the flow rate increases with the increase in current in a 0.5 mM $Li_2SO_4$ solution compared to that obtained when water was used as a pumping solution.

Fabrication and Characteristics of Indium Tin Oxide Films on CR39 Substrate for OTFT

  • Kwon, Sung-Yeol
    • Transactions on Electrical and Electronic Materials
    • /
    • v.7 no.5
    • /
    • pp.267-270
    • /
    • 2006
  • The Indium tin oxide (ITO) films were deposited on CR39 substrate using DC magnetron sputtering. ITO thin films deposited at room temperature because CR39 substrates its glass-transition temperature of is $130^{\circ}C$. ITO thin films used bottom and top electrode and for organic thin film transparent transistor.(OTFT) ITO thin film electrodes electrical properties and optical transparency properties in the visible wavelength range (300 - 800 nm) strongly dependent on volume of oxygen percent. For the optimum resistivity and transparency of ITO thin film electrode achieved with a 75 W plasma power, 10 % volume of oxygen and a 27 nm/min deposition rate. Above 85 % transparency in the visible wavelength range (300 - 800 nm) measured without post annealing process and $9.83{times}10{-4}{\Omega}cm$ a low resistivity was measured thickness of 300 nm.

Indium Sulfide and Indium Oxide Thin Films Spin-Coated from Triethylammonium Indium Thioacetate Precursor for n-Channel Thin Film Transistor

  • Dao, Tung Duy;Jeong, Hyun-Dam
    • Bulletin of the Korean Chemical Society
    • /
    • v.35 no.11
    • /
    • pp.3299-3302
    • /
    • 2014
  • The In2S3 thin films of tetragonal structure and In2O3 films of cubic structure were synthesized by a spin coating method from the organometallic compound precursor triethylammonium indium thioacetate ($[(Et)_3NH]^+[In(SCOCH_3)_4]^-$; TEA-InTAA). In order to determine the electron mobility of the spin-coated TEA-InTAA films, thin film transistors (TFTs) with an inverted structure using a gate dielectric of thermal oxide ($SiO_2$) was fabricated. These devices exhibited n-channel TFT characteristics with a field-effect electron mobility of $10.1cm^2V^{-1}s^{-1}$ at a curing temperature of $500^{\circ}C$, indicating that the semiconducting thin film material is applicable for use in low-cost, solution-processed printable electronics.

Poly(3-hydroxybutyrate-co-3-hydroxyvalerate)/Graphene Oxide Nanocomposite Films: Thermomechanical Properties, Oxygen Transmission Rates, and Hydrolytic Degradation

  • You, Eun Jung;Ha, Chang-Sik;Kim, Gue-Hyun;Lee, Won-Ki
    • Journal of Environmental Science International
    • /
    • v.26 no.1
    • /
    • pp.1-10
    • /
    • 2017
  • In this study, poly(3-hydroxybutyrate-co-3-hydroxyvalerate) (PHBV)/graphene oxide (GO) nanocomposite films containing various content of GO were prepared using solution casting method. The effect of GO content on Young's modulus and dispersion of GO in PHBV matrix was investigated. Also, the thermomechanical properties, oxygen transmission rates and hydrolytic degradation of PHBV/GO nanocomposite films were studied. The addition of GO into PHBV improves the Young's modulus and decreases thermal expansion coefficient. The improvement can be mainly attributed to good dispersion of GO and interfacial interactions between PHBV and GO. Furthermore, PHBV/GO nanocomposite films show good oxygen barrier properties. PHBV/GO nanocomposites show lower hydrolytic degradation rates with increasing content of GO.

Properties of indium tin oxide thin films annealed in vacuum (진공에서 열처리된 ITO 박막의 특성)

  • 이임연;이기암
    • Korean Journal of Optics and Photonics
    • /
    • v.11 no.3
    • /
    • pp.152-157
    • /
    • 2000
  • Post-deposition vacuum annealing effects in electron-bearn-evaporated indium tin oxide (ITO) films have been investigated by the change of transmittance, sheet resistance and crystalline structure with annealing temperature ( $200-335^{\circ}C$) and oxygen partial pressure ($1\times^10^{-5}-1$\times10^{-4} torr$) in air and vacuum. The sarnples were polycrystalline films with a preferred orientation in the (222) plan. High quality films with sheet resistance as low as 62 Q/O and transmittance over 99% (absentee layer at 500 nm) have been obtained by suitably controlling the vacuum annealing pararneters.neters.

  • PDF

Enhancement of Thermomechanical Properties of Poly(D, L-lactic-co-glycolic acid) and Graphene Oxide Composite Films for Scaffolds

  • Yoon, Ok-Ja;Sohn, Il-Yung;Kim, Duck-Jin;Lee, Nae-Eung
    • Proceedings of the Korean Vacuum Society Conference
    • /
    • 2012.02a
    • /
    • pp.548-548
    • /
    • 2012
  • Thermomechanical and surface chemical properties of composite films of poly(D, L-lactic-co-glycolic acid) (PLGA) were significantly improved by the addition of graphene oxide (GO) nanosheets as nanoscale fillers to the PLGA polymer matrix. Enhanced thermomechanical properties of the PLGA/GO (2 wt.%) composite film, including an increase in the crystallization temperature and reduction in the weight loss, were observed. The tensile modulus of a composite film with increased GO fraction was presumably enhanced due to strong chemical bonding between the GO nanosheets and PLGA matrix. Enhanced hydrophilicity of the composite film due to embedded GO nanosheets also improved the biocompatibility of the composite film. Improved thermomechanical properties and biocompatibility of the PLGA composite films embedded with GO nanosheets may be applicable to biomedical applications such as scaffolds.

  • PDF

Phase Changes of Vanadium Oxide Thin Films (산화 바나듐 박막의 상변화)

  • 선우진호;신인하;고경현;안재환
    • Journal of the Korean institute of surface engineering
    • /
    • v.25 no.6
    • /
    • pp.293-298
    • /
    • 1992
  • Various vanadium-oxide thin films were deposited by e-beam and thermal evaporation of V2O5, V2O3, and VO2 powders. Films with thickness of $2000\AA$ were subjected to annealing at $300^{\circ}C$~$450^{\circ}C$ in N2 atmosphere for the crystallization and desification purposes. For the films deposited from V2O5 and VO2 sources, sources, Magneli (VnO2n-1$ 4\leq$ $n\leq$ 8) and VO2 phase appeared at $300^{\circ}C$, respectively, but VO2 phase also transformed into Magneli phase at $450^{\circ}C$ by severe reduction. On the contrary, VO2/VO mixed phases resulted from congruent evaporation of V2O3 unchanged after the same annealing treatment due to the balanced reduction and oxidation of VO2 and VO whcih have different equilibrium O2 pressures. It is suggested that the annealing in the controlled oxidation atmosphere or the deposition using mixed oxide sources are necessary to get the film containing VO2 phase.

  • PDF

ELECTRICAL CHARACTERISTICS OF THIN DIELECTRIC FILMS PREPARED BY RAPID THERMAL PROCESS (RAPID THERAL PROCESS를 응용한 THIN DIELECTRIC FILM의 전기적 특성에 관한 연구.)

  • Lee, Ang-Goo;Park, Seong-Sik;Choi, Jin-Seog;Rhieu, Ji-Hyo
    • Proceedings of the KIEE Conference
    • /
    • 1987.07a
    • /
    • pp.542-545
    • /
    • 1987
  • THE ELECTRICAL CHARACTERISTICS Of RAPID THERMAL OXIDES AND NITRIDED OXIDES HAVE BEEN INVESTIGATED. R.T.OXIDE FILMS HAVE BEEN PREPARED BY ONLY R.T. OXIDATION OR R.T.OXIDATION AND SUBSEQUENT R.T.ANNEAL. NITRIDED OXIDE FILMS HAVE BEEN PREPARED BY R.T.OXIDATION AND SUBSEQUENT R.T.NITRIDATION.AND CONVENTIONAL OXIDES ALSO HAVE BEEN PREPARED TO COMPARE WITH R.T.P OXIDES. R.T.ANNEALED OXIDES SHOW EXCELLENT BREAKDOWN FIELD. LEAKAGE CURRENT AND TDDB CHARACTERISTICS. ALSO, CAPACITANCE Of R.T NITRIDED OXIDES ARE SUPERIOR BY 10% TO CONVENTIONAL OXIDES, BUT TDDB CHARACTERISTIC ARE POORER THAN OXIDE FILMS.

  • PDF