• 한국진공학회:학술대회논문집
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• 한국진공학회 2009년도 제38회 동계학술대회 초록집
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• pp.432-432
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• 2010

Organic light emitting diodes (OLED) thin films were fabricated by Electrostatic spray deposition (ESD). In this study, we reported the thickness, morphology, current efficiency, luminescence of OLED fabricated by ESD. These results were compared with the spin coating method, and showed that also ESD is a good fabrication method for OLED because of its characteristics similar with the results using spin coating. The active layer consists of organic blends with Poly(N-vinylcarbazole) (PVK), 2-(4-Biphenyl)-5-(4-tert-butylphenyl)-1,3,4-oxadiazole (PBD), N,N'-Bis(3-methylphenyl) -N,N'-bis(phenyl)-benzidine (TPD), Tris(2-phenylpyridine)iridium(III) (Ir(ppy)3), and the structure of OLED consists of aluminum (Al), lithium fluoride (LiF), organic blends, PEDOT:PSS and Indium-tin-oxide (ITO), which was used as the top cathode, cathode interfacial layer, emitting layer and bottom anode, respectively. The results suggest that Electrostatic spray deposition is a promising method for the next generation of OLED fabrication since it has a probability fabricating large-area thin films.

• Journal of Electrochemical Science and Technology
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• 제12권2호
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• pp.188-203
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• 2021

The specific benefits of the modified films formed on preliminary anodized aluminum, including the versatility of their potential applications impose the need for evaluation of the exploitation reliability of these films. In this aspect, the durability of Cu and Ni modified anodized aluminum oxide (AAO) films on the low-doped AA1050 alloy was assessed through extended exposure to a 3.5% NaCl model corrosive medium. The electrochemical measurements by means of electrochemical impedance spectroscopy (EIS) and potentiodynamic scanning (PDS) after 24 and 720 hours of exposure have revealed that the obtained films do not change their obvious barrier properties. In addition, supplemental analyses of the coatings were performed, in order to elucidate the impact of the AC-deposition of Cu and Ni inside the pores. The scanning electron microscopy (SEM) images have shown that the surface topology is not affected and resembles the typical surface of an etched metal. The subsequent energy dispersive X-ray spectroscopy (EDX) tests have revealed a predominance of Cu in the combined AAO-Cu/Ni layers, whereas additional X-ray photoelectron (XPS) analyses showed that both metals form oxides with different oxidation states due to alterations in the deposition conditions, promoted by the application of AC-polarization of the samples.

• 분석과학
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• 제36권2호
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• pp.80-88
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• 2023

Fingerprints play a crucial role in the identification of potential suspects in criminal cases. However, determining the actual time, i.e., the time at which the fingermark was deposited, is challenging. Herein, we investigated the persistence and aging of fingerprints over time by observing the time evolution of latent fingerprints on a polystyrene box stored in a dark room. Fingerprint samples that were stored for up to two years could be detected with maximum accuracy using a black iron-oxide-based emulsion (black emulsion). To estimate the time of fingerprint deposition, fingerprint aging was studied by analyzing the lipid components of the fingerprints after their development. Cholesterol and squalene were selected as indicators of fingerprint aging, and their ratio was estimated to assess aging. In the case of fingerprint samples stored in a dark room for up to one month after deposition, the cholesterol/squalene ratio was approximately 0.01; it increased gradually to ≥ 0.1 over six months. A substantial reduction in the levels of cholesterol and squalene from the initial levels was also noted. Cholesterol and squalene were not detected after one year of storage. Thus, the extent of aging could be determined by analyzing the aging indicators for up to six months. Two cases that could cause error in the estimation of the fingerprint deposition time, namely, heating of the fingerprint sample before development and storage of the developed fingerprints in a dark room, were also investigated.

• Journal of Ecology and Environment
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• 제31권3호
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• pp.167-176
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• 2008

Atmospheric N deposition has far-reaching impacts on forest ecosystems, including on-site impacts such as soil acidification, fertilization, and nutrient imbalances, and off-site environmental impacts such as nitrate leaching and nitrous oxide emission. Although chronic N deposition has been believed to lead to forest N saturation, recent evidence suggests that N retention capacity, particularly in the forest floor, can be surprisingly high even under high N deposition. This review aims to provide an overview of N retention processes in the forest floor and the implications of changing C-N interactions for C sequestration. The fate of available N in forest soils has been explained by the competitive balance between tree roots, soil heterotrophs, and nitrifiers. However, high rates of N retention have been observed in numerous N addition experiments without noticeable increases in tree growth and soil respiration. Alternative hypotheses have been proposed to explain the gap between the input and loss of N in N-enriched, C-limited systems, including abiotic immobilization and mycorrhizal assimilation, both of which do not require additional C sources to incorporate N in soil N pools. Different fates of N in the forest floor have different implications for C sequestration. N-induced tree growth can enhance C accumulation in tree biomass as observed across temperate regions. C loss from forests can amount to or outweigh C gain in N-saturated, declining forests, while another type of 'C-N decoupling' can have positive or neutral effects on soil C sequestration through hampered organic matter decomposition or abiotic N immobilization, respectively.

• Bulletin of the Korean Chemical Society
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• 제23권2호
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• pp.225-228
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• 2002

Amorphous $Ga_2O_3$ films have been grown on Si(100) substrates by metal organic chemical vapor deposition (MOCVD) using gallium isopropoxide, $Ga(O^iPr)_3$, as single precursor. Deposition was carried out in the substrate temperature range 400-800 $^{\circ}C$. X-ray photoelectron spectroscopy (XPS) analysis revealed deposition of stoichiometric $Ga_2O_3$ thin films at 500-600 $^{\circ}C$. XPS depth profiling by $Ar^+$ ion sputtering indicated that carbon contamination exists mostly in the surface region with less than 3.5% content in the film. Microscopic images of the films by scanning electron microscopy (SEM) and atomic force microscopy (AFM) showed formation of grains of approximately 20-40 nm in size on the film surfaces. The root-mean-square surface roughness from an AFM image was ${\sim}10{\AA}$. The interfacial layer of the $Ga_2O_3$/Si was measured to be ${\sim}35{\AA}$ thick by cross-sectional transmission electron microscopy (TEM). From the analysis of gaseous products of the CVD reaction by gas chromatography-mass spectrometry (GC-MS), an effort was made to explain the CVD mechanism.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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• pp.319-319
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• 2013

Even though the fabrication methods of metal oxide based thin film capacitor have been well established such as RF sputtering, Sol-gel, metal organic chemical vapor deposition (MOCVD), ion beam assisted deposition (IBAD) and pulsed laser deposition (PLD), an applicable capacitor of printed circuit board (PCB) has not realized yet by these methods. Barium Strontium Titanate (BST) and other high-k ceramic oxides are important materials used in integrated passive devices, multi-chip modules (MCM), high-density interconnect, and chip-scale packaging. Thin film multi-layer technology is strongly demanded for having high capacitance (120 nF/$mm^2$). In this study, we suggest novel multi-layer thin film capacitor design and fabrication technology utilized by plasma assisted deposition and photolithography processes. Ba0.6Sr0.4TiO3 (BST) was used for the dielectric material since it has high dielectric constant and low dielectric loss. 5-layered BST and Pt thin films with multi-layer sandwich structures were formed on Pt/Ti/$SiO_2$/Si substrate by RF-magnetron sputtering and DC-sputtering. Pt electrodes and BST layers were patterned to reveal internal electrodes by photolithography. SiO2 passivation layer was deposited by plasma-enhanced chemical vapor deposition (PE-CVD). The passivation layer plays an important role to prevent short connection between the electrodes. It was patterned to create holes for the connection between internal electrodes and external electrodes by reactive-ion etching (RIE). External contact pads were formed by Pt electrodes. The microstructure and dielectric characteristics of the capacitors were investigated by scanning electron microscopy (SEM) and impedance analyzer, respectively. In conclusion, the 0402 sized thin film multi-layer capacitors have been demonstrated, which have capacitance of 10 nF. They are expected to be used for decoupling purpose and have been fabricated with high yield.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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• pp.438-439
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• 2013

Microelectronic devices의 접촉저항의 향상을 위해 Metal silicides의 형성 mechanism과 전기적 특성에 대한 연구가 많이 이루어지고 있다. 지난 수십년에 걸쳐, Ti silicide, Co silicide, Ni silicide 등에 대한 개발이 이루어져 왔으나, 계속적인 저저항 접촉 소재에 대한 요구에 의해 최근에는 Rare earth silicide에 관한 연구가 시작되고 있다. Rare-earth silicide는 저온에서 silicides를 형성하고, n-type Si과 낮은 schottky barrier contact (~0.3 eV)를 이룬다. 또한, 비교적 낮은 resistivity와 hexagonal AlB2 crystal structure에 의해 Si과 좋은 lattice match를 가져 Si wafer에서 high quality silicide thin film을 성장시킬 수 있다. Rare earth silicides 중에서 ytterbium silicide는 가장 낮은 electric work function을 갖고 있어 낮은 schottky barrier 응용에서 쓰이고 있다. 이로 인해, n-channel schottky barrier MOSFETs의 source/drain으로써 주목받고 있다. 특히 ytterbium과 molybdenum co-deposition을 하여 증착할 경우 thin film 형성에 있어 안정적인 morphology를 나타낸다. 또한, ytterbium silicide와 마찬가지로 낮은 면저항과 electric work function을 갖는다. 그러나 ytterbium silicide에 molybdenum을 화합물로써 높은 농도로 포함할 경우 높은 schottky barrier를 형성하고 epitaxial growth를 방해하여 silicide film의 quality 저하를 야기할 수 있다. 본 연구에서는 ytterbium과 molybdenum의 co-deposition에 따른 silicide 형성과 전기적 특성 변화에 대한 자세한 분석을 TEM, 4-probe point 등의 다양한 분석 도구를 이용하여 진행하였다. Ytterbium과 molybdenum을 co-deposition하기 위하여 기판으로 $1{\sim}0{\Omega}{\cdot}cm$의 비저항을 갖는 low doped n-type Si (100) bulk wafer를 사용하였다. Native oxide layer를 제거하기 위해 1%의 hydrofluoric (HF) acid solution에 wafer를 세정하였다. 그리고 고진공에서 RF sputtering 법을 이용하여 Ytterbium과 molybdenum을 동시에 증착하였다. RE metal의 경우 oxygen과 높은 반응성을 가지므로 oxidation을 막기 위해 그 위에 capping layer로 100 nm 두께의 TiN을 증착하였다. 증착 후, 진공 분위기에서 rapid thermal anneal(RTA)을 이용하여 $300{\sim}700^{\circ}C$에서 각각 1분간 열처리하여 ytterbium silicides를 형성하였다. 전기적 특성 평가를 위한 sheet resistance 측정은 4-point probe를 사용하였고, Mo doped ytterbium silicide와 Si interface의 atomic scale의 미세 구조를 통한 Mo doped ytterbium silicide의 형성 mechanism 분석을 위하여 trasmission electron microscopy (JEM-2100F)를 이용하였다.

• 한국재료학회지
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• 제25권5호
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• pp.233-237
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• 2015

Silicon oxynitride that can be deposited two times faster than general SiNx:H layer was applied to fabricate the passivation protection layer of atomic layer deposition (ALD) $Al_2O_3$. The protection layer is deposited by plasma-enhanced chemical vapor deposition to protect $Al_2O_3$ passivation layer from a high temperature metallization process for contact firing in screen-printed silicon solar cell. In this study, we studied passivation performance of ALD $Al_2O_3$ film as functions of process temperature and RF plasma effect in plasma-enhanced chemical vapor deposition system. $Al_2O_3$/SiON stacks coated at $400^{\circ}C$ showed higher lifetime values in the as-stacked state. In contrast, a high quality $Al_2O_3$/SiON stack was obtained with a plasma power of 400 W and a capping-deposition temperature of $200^{\circ}C$ after the firing process. The best lifetime was achieved with stack films fired at $850^{\circ}C$. These results demonstrated the potential of the $Al_2O_3/SiON$ passivated layer for crystalline silicon solar cells.

• 한국세라믹학회지
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• 제38권11호
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• pp.1037-1041
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• 2001

저온(32$0^{\circ}C$)에서 SiH$_4$와 $N_2$O 가스의 혼합을 통해 플라즈마화학기상증착(PECVD)법을 이용하여 실리카 광도파로의 클래딩막으로 사용되는 SiO$_2$후막을 제조하였다. 증착변수가 SiO$_2$후막의 특성에 미치는 영향을 살펴보기 위해 $N_2$O/SiH$_4$flow ratio와 RF power에 변화를 주었다. $N_2$O/SiH$_4$ flow ratio가 감소함에 따라 증착속도는 2.9 $mu extrm{m}$/h), 굴절률은 thermal oxide의 굴절률(n=1.46)에 근접하였다.

• Restorative Dentistry and Endodontics
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• 제6권1호
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• pp.7-16
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• 1980

The author observed the periodontal tissue reactions to the root canal sealers after root perforations were made intentionally in dogs. The perforations were made on 74 teeth from 7 dogs. The experiments were performed in two different modes of procedure: In Group I, the perforations were made through the root canal to the alveolar bone. In Group II, the perforations were made from site of alveolar bone to the root canals. The perforated canals in Group I were filled with gutta-percha and root canal cements; Calxyl (Calcium Hydroxide in Ringer's solution), Zinc Oxide -Eugenol cement (Z.O.E.), Kerr sealer (Rickert's paste) and AH 26 (Epoxy Resin preparations). The perforated canals in Group II were sealed with Calxyl, Z.O.E, Kerr sealer and AH26. Histologic examinations of periodontal tissue reactions were observed at various time intervals. The results were as follows; l. Cementum deposition on the perforated root surface in Group II cases showed slightly earlier than that of Group I. Healing tendency of injured alveolar bone in Group II was greater than that of Group I. 2. According to the time increase after experiment, the cementum deposition on the site of perforated dentin in Group II with intact pulp was notably thickened. Secondary dentin deposition on the root canal surface where the dentinal tubles were cut was also found in similar pattern. 3. In the cases of perforated canals sealed with Calxyl both in Group I and Group II, It revealed the earliest cementum-deposition among 4 different root canal cements. In the cases of perforated canals sealed with Kerr sealer and AH26, the cementum-deposition on the root surface was not found. 4. Proliferation of epithelium around the perforated area was first seen at 5-week cases in Group I, and at 3-week cases in Group II. 5. In all cases, dentin resorption on the site of perforated root surface was always occured.