• 한국신재생에너지학회:학술대회논문집
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• 2009.11a
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• pp.218-221
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• 2009

Solid oxide fuel cells (SOFCs), as high-temperature fuel cells, have various advantages. In some merits of SOFCs, high temperature operation can lead to the capability for internal reforming, providing fuel flexibility. SOFCs can directly use CH4 and CO as fuels with sufficient steam feeds. However, hydrocarbons heavier than CH4, such as ethylene, ethane, and propane, induce carbon deposition on the Ni-based anodes of SOFCs. In the case of the ethylene steam reforming reaction on a Ni-based catalyst, the rate of carbon deposition is faster than among other hydrocarbons, even aromatics. In the reformates of heavy hydrocarbons (diesel, gasoline, kerosene and JP-8), the concentration of ethylene is usually higher than other low hydrocarbons such as methane, propane and butane. It is importatnt that ethylene in the reformate is removed for stlable operation of SOFCs. A new methodology, termed post-reforming was introduced for removing low hydrocarbons from the reformate gas stream. In this work, activity tests of some post-reforming catalysts, such as CGO-Ru, CGO-Ni, and CGO-Pt, are investigated. CGO-Pt catalyst is not good for removing ethylene due to low conversion of ethylene and low selectivity of ethylene dehydrogenation. The other hand, CGO-Ru and CGO-Ni catalysts show good ethylene conversion, and CGO-Ni catalyst shows the best reaction selectivity of ethylene dehydrogenation.

• Applied Science and Convergence Technology
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• v.23 no.4
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• pp.187-191
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• 2014

Indium oxide ($In_2O_3$) nanorods (NRs) which can be expected to increase the device performance in various electronic and electrochemical applications were prepared on carbon fibers via an electrochemical deposition (ED) method. During the ED, the indium hydroxide ($In(OH)_3$) NRs were well grown and firmly attached onto the carbon fibers. After that, they were changed into $In_2O_3$ by dehydration through a thermal annealing. The morphological and structural properties were investigated using field-emission scanning electron microscope images. The crystallinity of as-prepared sample was evaluated by X-ray diffraction. The Fourier transform infrared results confirm that the functional groups are present in the $In_2O_3$ NRs. This facile process of metal oxide nanostructures on carbon fiber can be utilized for flexible electronic and energy related applications.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.18 no.11
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• pp.983-989
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• 2005

[ $PZT(Pb(Zr,Ti)O_3)$ ] thin films were deposited by multi-target reactive sputtering method on $RuO_2$ substrates. Pure perovskite phase PZT films could be obtained by introducing Ti-oxide seed layer on the $RuO_2$ substrates prior to PZT film deposition. The PZT films deposited on the $RuO_2$ substrates showed highly voltage-shifted hysteresis loop compared with the films deposited on the Pt substrates. The surface of $RuO_2$ substrate was found to be reduced to metallic Ru in vacuum at elevated temperature, which caused the formation of oxygen vacancies at the initial stage of PZT film deposition and gave rise to the voltage shift in the P-E hysteresis loop of the PZT capacitor. The fatigue characteristics of the PZT capacitors under unipolar wane electric field were different from those under bipolar wane. The fatigue test under unipolar wane showed the increase of polarization. It was thought that the ferroelectric domains which had been pinned by charged defects such as oxygen vacancies and the charged defects were reduced in number by combining with the electrons injected from the electrode under unipolar wave, resulting in the relaxation of the ferroelectric domains and the increase of polarization.

• Journal of the Microelectronics and Packaging Society
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• v.20 no.1
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• pp.27-31
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• 2013

Copper-oxide (CuO) thin films were prepared by reactive sputtering of Cu onto Si wafers and characterized using a statistical design of experiments approach. The most significant factor in controlling the electrical resistivity and deposition rate was determined to be the $O_2$ fraction. The deposited CuO thin films were characterized in terms of their physical and chemical properties, using X-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM), X-ray diffraction (XRD), and 4-point resistance measurements. The deposited copper thin films were characterized by XPS and XRD analyses to consist of $Cu^{2+}$. The CuO thin films of highest resistivity exhibited superior rectifying responses with regard to n-type Si wafers, with a current ratio of $3.8{\times}10^3$. These superior responses are believed to be associated with the formation of a charge-depletion region originating from the p-type CuO and n-type Si materials.

• Journal of Ocean Engineering and Technology
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• v.21 no.1 s.74
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• pp.59-63
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• 2007

The thin film of indium tin oxide (ITO) was prepared using the inclination opposite target type DC magnetron sputtering equipment onto the glass substrate at room temperature, using oxidized ITO with In2O3 and SnO2in a weight ratio of 9:1. The elastic modulus and hardness of the ITO thin films, prepared at different deposition conditions, were determined through anano-indentation experiment. The work pressure was varied from $2.6{\times}10-1\;to\;8.3{\times}10-1Pa$. The results show that the variation of work pressure during film deposition could vary significantly, according to the elastic modulus and hardness of the ITO thin films. It also can be seen that a minimum value exists in the film resistivity for the ITO thin films, prepared according to the variation of work pressure. However, the ITO film produced at room temperature had a microstructure in which a X ray diffraction peak is not clear, regardless of the work pressure.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.8
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• pp.657-662
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• 2003

This paper presents a new fabrication method of selective SiGe epitaxial growth at 650 $^{\circ}C$ on (100) silicon wafer with oxide patterns by reduced pressure chemical vapor deposition. The new method is characterized by a cyclic process, which is composed of two parts: initially, selective SiGe epitaxy layer is grown on exposed bare silicon during a short incubation time by SiH$_4$/GeH$_4$/HCl/H$_2$system and followed etching step is achieved to remove the SiGe nuclei on oxide by HCl/H$_2$system without source gas flow. As a result, we noted that the addition of HCl serves not only to reduce the growth rate on bare Si, but also to suppress the nucleation on SiO$_2$. In addition, we confirmed that the incubation period is regenerated after etching step, so it is possible to grow thick SiGe epitaxial layer sustaining the selectivity. The effect of the addition of HCl and dopants incorporation was investigated.

• Bulletin of the Korean Chemical Society
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• v.33 no.4
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• pp.1199-1203
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• 2012

Catalytic filters consisting of Ni nanoparticle and carbon fiber with different oxidation states of Ni (either metallic or oxidic) were prepared using a chemical vapor deposition process and various post-annealing steps. CO oxidation reactivity of each sample was evaluated using a batch type quartz reactor with a gas mixture of CO (500 mtorr) and $O_2$ (3 torr) at $300^{\circ}C$. Metallic and oxidic Ni showed almost the same CO oxidation reactivity. Moreover, the CO oxidation reactivity of metallic sample remained unchanged in the subsequently performed second reaction experiment. We suggested that metallic Ni transformed into oxidic state at the initial stage of the exposure to the reactant gas mixture, and Ni-oxide was catalytically active species. In addition, we found that CO oxidation reactivity of Ni-oxide surface was enhanced by increase in the $H_2O$ impurity in the reactor.

• Korean Journal of Materials Research
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• v.17 no.5
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• pp.263-267
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• 2007

Hafnium oxide $(HfO_2)$ films were deposited on Si(100) substrates by remote plasma-enhanced atomic layer deposition (PEALD) method at $250^{\circ}C$ using TEMAH [tetrakis(ethylmethylamino)hafnium] and $O_2$ plasma. $(HfO_2)$ films showed a relatively low carbon contamination of about 3 at %. As-deposited and annealed $(HfO_2)$ films showed amorphous and randomly oriented polycrystalline structure. respectively. The interfacial layer of $(HfO_2)$ films deposited using remote PEALD was Hf silicate and its thickness increased with increasing annealing temperature. The hysteresis of $(HfO_2)$ films became lower and the flat band voltages shifted towards the positive direction after annealing. Post-annealing process significantly changed the physical, chemical, and electrical properties of $(HfO_2)$ films. $(HfO_2)$ films deposited by remote PEALD using TEMAH and $O_2$ plasma showed generally improved film qualities compare to those of the films deposited by conventional ALD.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.368-368
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• 2007

Zinc oxide (ZnO) has drawn much interest as a potential transparent conducting oxide (TCO) for applying to solar cell and front electrode of electro-luminescent devices. For the enhancement of electrical property of TCOs, dopant introduction and hybridization with conductive nanoparticles have been investigated. In this work, ZnO films were formed on glass substrate by using photochemical solution deposition of Ag nanoparticles dispersed or various metal (Ag, Cd, In, or Sn) contained photosensitive ZnO solutions. The usage of photosensitive solution permits us to obtain a micron-sized direct patterning of ZnO film without using conventional dry etching procedure. The structural, optical, and electrical characteristics of ZnO films with the introduction of metal dopants with/without Ag nanoparticles have been investigated to check whether there is a combined effect between metal dopants and Ag nanoparticles on the characteristics of ZnO film. The phase formation and crystallinity of ZnO film were monitored with X-ray diffractometer. The optical transmittance measurement was carried out using UV-VIS-NIR spectrometer and the electrical properties such as sheet resistance and conductivity were observed by using four-point probe.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.26 no.3
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• pp.177-182
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• 2013

Transparent thin film transistors (TTFT) were fabricated on $N^+$ Si wafers. $SiO_2$, $Si_3N_4/SiO_2$ and $Al_2O_3/SiO_2$ grown on the wafers were used as gate insulators. The rf magnetron sputtered zinc tin oxide (ZTO) films were adopted as active layers. $N^+$ Si wafers were wet-oxidized to grow $SiO_2$. $Si_3N_4$ and $Al_2O_3$ films were deposited on the $SiO_2$ by plasma enhanced chemical vapor deposition (PECVD) and atomic layer deposition (ALD), respectively. The mobility, $I_{on}/I_{off}$ and subthreshold swing (SS) were obtained from the transfer characteristics of TTFTs. The properties of gate insulators were analyzed by comparing the characteristics of TTFTs. The property variation of the ZTO TTFTs with time were observed.