• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2005년도 추계학술대회 논문집 Vol.18
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• pp.356-357
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• 2005

Chemical mechanical polishing (CMP) allows the planarization of wafers with two or more materials at their surfaces. Especially, polishing pad is considered as one of the most important consumables because of its properties. Subject of this investigation is to apply CMP for planarization of shallow trench isolation structure using microstructure pad. Microstructure pad is designed to have uniform structure on its surface and fabricated by micro-molding technology. And then STI CMP performances such as oxide dishing and nitride corner rounding are evaluated.

• 한국윤활학회:학술대회논문집
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• 한국윤활학회 2002년도 proceedings of the second asia international conference on tribology
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• pp.445-446
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• 2002

The purpose of this study was to investigate the effect of micro holes, pattern structure and elastic modulus of pads on the polishing behavior such as the removal rate and WIWNU (within wafer non-uniformity) during CMP. The regular holes on the pad act as the superior abrasive particle's reservoir and regular distributor at the bulk pad, respectively. The superior CMP performance was observed at the laser processed bulk pad with holes. Also, th ε groove pattern shape was very important for the effective polishing. Wave grooved pad showed higher removal rates than K-grooved pad. The removal rate was linearly increased as the top pad's elastic modulus increased.

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2006년도 춘계학술대회 논문집
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• pp.479-480
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• 2006

The purpose of this paper is to investigate the relationship between CMP(Chemical Mechanical Polishing) characteristics of ITO thin film and friction signal by using the CMP monitoring system. Suba 400 pad and MSW2000 slurry of the Rohm & Haas Co. was used in this experiment to investigate the charateristics of ITO CMP. From this experiment, it is proven that the coefficient of friction is related to uniformity of the removal rate of the ITO thin film. Therefore, the prediction of polishing result would be possible by measuring friction signal.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1999년도 춘계학술대회 논문집
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• pp.211-213
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• 1999

In this paper, we documented the controlling oxide removal amount on the pattern wafer using removal rate and removal thickness of blanket wafer. There was the strong correlation relationship for both(correlation factor:0.7109). So, we could confirm the repeatability as applying for STI CMP process from the obtained linear formular. As the result of repeatability test, the difference of calculated polishing time and actual polishing time was 3.48 seconds based on total 50 lots. If this time is converted into the thickness, it is from 104$\AA$ to 167$\AA$. It is possible to be ignored because it is under the process margin.

• 한국전자통신학회논문지
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• 제17권6호
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• pp.1175-1180
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• 2022

STI는 반도체 소자의 소형화 및 고집적화에 따른 광역 평탄화를 위한 공정 기술로써 많은 연구가 이루어져 왔다. 본 연구에서는 STI의 profile 개선을 위한 방법으로 STI 건식각 후 HF 용액에 의한 pad oxide 습식각과 O₂+CF₄ 건식각을 제안하였다. 이 공정 기술은 기존의 방법보다 소자의 밀집도에 따른 패턴간의 프로파일 불균형과 누설전류의 개선을 나타내었다. 또한 동일한 STI 깊이와 HLD 증착를 갖는 디바이스에 대하여 CMP 후 HLD 두께를 측정한 결과 디바이스 밀도에 따라 측정값이 다르게 나타났고 이는 CMP 후 디바이스 밀도에 따른 질화막의 두께 차이 및 슬러리의 선택비에 기인됨을 확인하였다.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2003년도 추계학술발표강연 및 논문개요집
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• pp.63-63
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• 2003

The nanotopography of silicon wafers has emerged as an important factor in the STI process since it affects the post-CMP thickness deviation (OTD) of dielectric films. Ceria slurry with surfactant is widely applied to STI-CMP as it offers high oxide-to-nitride removal selectivity. Aiming to control the nanotopography impact through ceria slurry characteristics, we examhed the effect of surfactant concentration and abrasive size on the nanotopography impact. The ceria slurries for this study were produced with cerium carbonate as the starting material. Four kinds of slurry with different size of abrasives were prepared through a mechanical treatment The averaged abrasive size for each slurry varied from 70 nm to 290 nm. An anionic organic surfactant was added with the concentration from 0 to 0.8 wt %. We prepared commercial 8 inch silicon wafers. Oxide Shu were deposited using the plasma-enhanced tetra-ethyl-ortho-silicate (PETEOS) method, The films on wafers were polished on a Strasbaugh 6EC. Film thickness before and after CMP was measured with a spectroscopic ellipsometer, ES4G (SOPRA). The nanotopogrphy height of the wafer was measured with an optical interferometer, NanoMapper (ADE Phase Shift)

• 한국정밀공학회지
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• 제18권11호
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• pp.168-173
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• 2001

The chemical mechanical polishing (CMP) is generally consisted of pad, slurry including abrasives and so on. However, there are some problems in a general CMP: defects, a high Cost of Consumable (CoC), an environmental problem. The slurry including abrasives especially gives rise to not only increase a CoC, but also prohibition from achieving an eco-process. This paper introduces an abrasive capsulation pad to achieve an eco-process decreasing abrasives used is CMP. The binder wth a water a water swelling and a water soluble characteristic is used for an auto-conditioning, and the $CeO_2$abrasive is selected for an abrasive capsulation pad. Comparing with a conventional CMP, an abrasive capsulation pad appears good characteristics in ILD CMP and is able to achieve an eco-process decreasing wasted slurry.

• 한국전기전자재료학회논문지
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• 제13권7호
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• pp.568-574
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• 2000

We have been optimized tungsten(W) plug CMP(chemical mechanical polishing) characteristics using two different kinds of component of slurry and two different kinds of pad which have different hardness. The comparison of oxide film roughness on around W plug after polishing has been carried out. And W plug recess for consumable sets and dishing effect at dense area according to the rate of over-polishing has been investigated. Also the analysis of residue on surface after cleaning have been performed. As a experimental result we have concluded that the consumable set of slurry A and hard pad was good for W plug CMP process. After decreasing the rate of chemical reaction of silica slurry and adding two step buffering we could reduce the expanding of W plug void however we are still recognizing to need a more development for those kinds of CMP consumables.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 하계학술대회 논문집 Vol.7
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• pp.571-572
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• 2006

Tungsten CMP needs interconnect of semiconductor device ULSI chip and metal plug formation, CMP technology is essential indispensable method for local planarization. This Slurry development also for tungsten CMP is important, slurry of metal wiring material that is used present is depending real condition abroad. It is target that this research makes slurry of efficiency that overmatch slurry that is such than existing because focus and use colloidal silica by abrasive particle to internal production technology development. Compared selectivity of slurry that is developed with competitor slurry using 8" tungsten wafer and 8" oxide wafer in this experiment. And removal rate measures about density change of $H_2O_2$ and Fe particle. Also, corrosion potential and current density measure about Fe ion and Fe particle. As a result, selectivity find 83:1, and expressed similar removal rate and corrosion potential and current density value comparing with competitor slurry.

• 공업화학
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• 제22권6호
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• pp.631-635
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• 2011

직접산화법으로 제조한 구형 실리카졸과 비구형 실리카졸의 입자크기와 형상에 따른 산화막의 기계화학적 연마율에 미치는 영향을 연구하였다. 구형 실리카졸은 금속 실리콘 분말로부터 직접산화법에 의해 10~100 nm까지 크기별로 제조하였다. 직접산화법으로 제조한 10 nm 크기의 실리카졸에 산, 알콜, 실란과 같은 응집유도제에 의한 첨가하여 입자간 응집을 유도한 시드 졸을 제조하고, 여기에 실리콘 분말과 알칼리 촉매를 투입하여 직접산화법으로 입자를 성장하여, 두 개 이상의 입자가 응집되어 있는 실리카 시드의 형상이 유지된 상태에서 성장한 응집 비구형 실리카졸을 제조하였다. 이를 산화막 CMP에 적용하여 구형 및 비구형 실리카졸의 입자형상 및 크기에 따른 연마율을 비교하였다. 구형 실리카의 경우, 입자크기가 증가할수록 연마율은 높아졌고, 비구형 실리카졸은 평균입경이 유사한 크기의 구형 실리카 보다 더욱 높은 연마율을 나타내었다.