• Title/Summary/Keyword: Oxidation stress

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The Oxidative Stress in Cigarette Smokers and Antioxidant Vitamins

  • Aewha, Ha;Harris, Natholyn D.
    • Journal of Nutrition and Health
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    • v.30 no.9
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    • pp.1102-1108
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    • 1997
  • The purpose of this study was to find the extent of lipid peroxidation of erythrocytes in cigarette smokers, and to determine the relative effectiveness of $\beta$-carotene, canthaxanthin , and $\alpha$-tocopherol as antioxidants. Thirty smokers and 30 nonsmokers participated in this study . No significant differences according to age, sex, and height were shown. Cigarette smokers in this study had higher hemoglobin concentrations and more oxidation of hemoglobin than non-smokers. In addition, the erythrocytes of cigarette smokers had significantly higher MDA concentrations than crythrocytes of nonsmokers, which suggests that smokers may have tocopherol were studied in vitro by measuring the concentration of malondialdehyde(MDA) and precent hemolysis of erythrocytes. The addition of any antioxidant to erythrocytes significantly decreased MDA concentrations(p<0.05) while antioxidants showed nonsignificant inhibition of hemolysis. Among the antioxidant used in this study, canthaxanthin showed the greatest inhibition of both lipid peroxidationand hemolysis. Meanwhile, $\alpha$-tocopherol showed potent inhibition of lipid peroxidation, but not of hemolysis.

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Characteristics Variation of Oxide Interface Trap Density by Themal Nitridation and Reoxidation (산화막의 질화, 재산화에 의한 계면트랩밀도 특성 변화)

  • 백도현;이용재
    • Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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    • 1999.05a
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    • pp.411-414
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    • 1999
  • 70 ${\AA}$-thick oxides nitridied at various conditions were reoxidized at pemperatures of 900$^{\circ}C$ in dry-O$_2$ ambients for 5~40 mininutes. The gate oxide interface porperties as well as the oxide substrate interface properties of MOS(Metal Oxide Semiconductor) capacitors with various nitridation conditions, reoxidation conditions and pure oxidation condition were investigated. We stuided I$\sub$g/-V$\sub$g/ characteristics, $\Delta$V$\sub$g/ shift under constant current stress from electrical characteristics point of view and breakdown voltage from leakage current point of view of MOS capacitors with SiO$_2$, NO, RNO dielectrics. Overall, our experimental results show that reoxidized nitrided oxides show inproved charge trapping porperites, I$\sub$g/-V$\sub$g/ characteristics and gate $\Delta$V$\sub$g/ shift. It has also been shown that reoxidized nitridied oxide's leakage currented voltage is better than pure oxide's or nitrided oxide's from leakage current(1${\mu}$A) point of view.

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A Study on the Sliding Wear Characteristicsn of the Die Steel for the Cold Molding (냉간성형용 Die 강의 미끄럼 마멸특성에 관한 연구)

  • 전태옥;박흥식;류경곤
    • Tribology and Lubricants
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    • v.9 no.1
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    • pp.38-44
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    • 1993
  • The present study was undertaken to investigate the dry wear characteristics of die steel STD 11 for cold molding. The wear test was experimentally carried out under different conditions using a wear device, which was made in laboratory, and in which annular surfaces of wear testing specimens wear rubbed in dry sliding condition with varying the sliding speed, contact pressure, and sliding distance. The wear loss by variation of sliding speed was much in 0.3 m/sec and less in higher speed range above its sliding speed according to formation of the boundary lubrication film. The critical sliding speed with maximum value of the specific wear rate switched over to lower speed side according. as contact pressure increased. The critical sliding distance was increased with decrease in oxidation reaction velocity. The depth below subsurface showing maximum hardness (Hv) came out at the position, $60 \mu m$, of the maximum shear stress due to strain hardening.

Characteristics of Reoxidized-Nitrided-Oxide Films Prepared by Sequential Rapid Thermal Oxidation and Nitridation (연속적 급속열처리법에 의한 재산화질화산화막의 특성)

  • 노태문;이경수;이중환;남기수
    • Journal of the Korean Institute of Telematics and Electronics
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    • v.27 no.5
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    • pp.729-736
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    • 1990
  • Oxide (RTO), nitrided-oxide(NO), and reoxidized-nitrided-oxide(ONO) films were formed by sequential rapid thermal processing. The film composition was investigated by Auger electron spectroscopy(AES). The Si/SiO2 interface and SiO2 surface are nitrided more preferentially than SiO2 bulk. When the NO is reoxidized, [N](atomic concentration of N) in the NO film decreased` especially, the decrease of [N] at the surface is considerable. The weaker the nitridation condition is, the larger the increase of thickness is as the reoxidation proceeds. The elelctrical characteristics of RTO, NO, and ONO films were evaluated by 1-V, high frequency (1 MHz) C-V, and high frequency C-V after constant current stress. The ONO film-which has 8 nm thick initial oxide, nitrided in NH3 at 950\ulcorner for 60 s, reoxidized in O2 at 1100\ulcorner for 60 s-shows good electrical characteristics such as higher electrical breakdown voltage and less variation of flat band voltage under high electric field than RTO, and NO films.

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Fabrication of Porous Silicon Using Electrochemical Etching (전기화학적 식각을 이용한 다공성 실리콘 제조)

  • Jin, Dong-Woo;No, Sang-Soo;Kim, Gue-Hyun;Chung, Gwiy-Sang
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2004.04b
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    • pp.121-124
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    • 2004
  • The research on the porous silicon having low wafer stress during the oxidation process in IPOS(Isolation by Porous Oxidized Silicon) were carried out. Fine pores with less than 100A of diameter were found in the porous silicon which from p-type Si by electrochemical etching. In this study, it is possible to make the porous silicon with 59% of porosity.

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High-temperature Mechanical Properties Measurement and Life Assessment of Boiler Equipment by Instrumented Indentation Technique (계장화 압입시험법을 이용한 보일러 설비의 고온 기계적 물성 측정과 수명 평가)

  • Ro, Dong-Seong;Hong, Jeong-Wha;Kim, Kwang-Ho;Lee, Jung-Jun
    • Journal of the Korean Society of Safety
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    • v.24 no.3
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    • pp.1-6
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    • 2009
  • Recently power plants and oil refineries are focusing on capacity enlargement for better efficiency through higher temperature and higher pressure. Thickness of boiler tubes becomes lessened due to oxidation and erasion caused by high temperature bums gas flowing over tubes outside. Accordingly, mechanical stress of tubes is increasing and that is a critical factor to make a crack and fracture. To prevent those sorts of accidents, aging assessment for proper periodic repair and replacement should be conducted reliably and reasonably. We performed IIT test on Cr-Mo steel, one of the most heat-resistant materials for facilities in power plants, and we report the test result and the considerable effectiveness of IIT test.

A Study on the Epitaxial Growth of Superconducting Thin Film (초전도 박막의 에피택셜 성장에 관한 연구)

  • Lee, Hee-Kab;Park, Yong-Pil;Kim, Gwi-Yeol
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2002.05c
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    • pp.208-211
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    • 2002
  • $Bi_2Sr_2CuO_x$(Bi-2201) thin films were fabricated by atomic layer-by-layer deposition using an ion beam sputtering method. 10 wt% and 90 wt% ozone mixed with oxygen were used with ultraviolet light irradiation to assist oxidation. At early stages of the atomic layer by layer deposition, two dimensional epitaxial growth which covers the substrate surface would be suppressed by the stress and strain caused by the lattice misfit, then three dimensional growth takes place. Since Cu element is the most difficult to oxidize, only Sr and Bi react with each other predominantly, and forms a buffer layer on the substrate in an amorphous-like structure, which is changed to $SrBi_2O_4$ by in-situ anneal.

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Characteristics of BSCCO Thin Film by Layer-by-layer Deposition (순차 스퍼터 법에 의한 BSCCO 박막의 특성)

  • Lee, Hee-Kab;Park, Yong-Pil;Kim, Gwi-Yeol;Oh, Geum-Gon;Choi, Woon-Shik;Cho, Choon-Nam
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2001.11b
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    • pp.281-283
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    • 2001
  • $Bi_{2}Sr_{2}CuO_{x}$(Bi-2201) thin films were fabricated by atomic layer-by-layer deposition using an ion bearn sputtering method. 10 wt% and 90 wt% ozone mixed with oxygen were used with ultraviolet light irradiation to assist oxidation. At early stages of the atomic layer by layer deposition. two dimensional epitaxial growth which covers the substrate surface would be suppressed by the stress and strain caused by the lattice misfit. then three dimensional growth takes place. Since Cu element is the most difficult to oxidize. only Sr and Bi react with each other predominantly. and forms a buffer layer on the substrate in an amorphous-like structure. which is changed to $SrBi_{2}O_{4}$ by in-situ anneal.

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Action of Asparagus racemosus Against Streptozotocin-Induced Oxidative Stress

  • Govindarajan, Raghavan;Vijayakumar, Madhavan;Rao, Chandana Venkateshwara;Kumar, Vivek;Rawat, Ajay Kumar Singh;Pushpangadan, Palpu
    • Natural Product Sciences
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    • v.10 no.4
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    • pp.177-181
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    • 2004
  • Antidiabetic treatment with tubers of Asparagus racemosus (Liliaceae) extract (l00 and 250 mg/kg body weight) for three weeks showed significant reduction in thiobarbituric acid reactive substances (TBARS) and glutathione reductase (GSH-R) in both liver and kidney. The treatment with A. racemosus significantly altered the glutathione (GSH) and GSH-R to be comparable with the control group. A. racemosus and glibenclamide treated rats showed decreased lipid peroxidation that is associated with increased activity of superoxide dismutase (SOD) and Catalase (CAT). The ability of A. racemosus on tissue lipid per oxidation and antioxidant status in diabetic animals has not been studied before. The result of this study thus shows that though, A. racemosus possesses moderate antidiabetic activity, but it exhibits potent antioxidant potential in diabetic conditions.

Characteristics of Poly-Oxide of New Sacrificial Layer for Micromachining (마이크로머시닝을 위한 새로운 희생층인 다결정-산화막의 특성)

  • Hong, Soon-Kwan;Kim, Chul-Ju
    • Journal of Sensor Science and Technology
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    • v.5 no.1
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    • pp.71-77
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    • 1996
  • Considering that polycrystalline silicon, a structural material of the micromachining, is affected by a sacrificial oxide layer, the poly-oxide obtained by the thermal oxidation of polycrystalline silicon is newly proposed and estimated as the sacrificial oxide layer. The grain size of the polycrystalline silicon grown on the poly-oxide is larger than that of poly crystalline silicon grown on the conventional sacrificial oxide layer. As a result of XRD, increase of (111) textures and formation of additional (220) textures are observed on the polycrystaIline silicon deposited on the poly-oxide. Also, the polycrystalline silicon grown on the poly-oxide represents small and uniform stress.

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