• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.11a
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• pp.492-495
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• 2000

In order to develop an ultra-thin CoCr perpendicular magnetic recording layer, we prepared CoCrTa/Ti double layer for perpendicular magnetic recording media by new facing targets sputtering system, Crystallgraphics and magnetic characteristics of CoCrTa on underlayer substrate temperature have been investigated. Crystallgraphic and magnetic characteristic of thin films were evaluated by X-ray diffractometry(XRD), vibrating sample magnetometer(VSM) and atomic force microscopy(AFM). The coercivity and anisotropy field was increased by increasing under layer substrate temperature, c-axis orientation of CoCrTa magnetic recording layer was improved 8$^{\circ}$ to 5.6$^{\circ}$when under layer substrate temperature was 250[$^{\circ}C$]. Also, through annealing effect for CoCrTa/Ti double layer, it was certain that crystallgraphics and magnetic characteristics was improved.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.20 no.11
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• pp.939-942
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• 2007

We investigated the characteristics of UTB-SOI pMOSFETs with SOI thickness($T_{SOI}$) ranging from 10 nm to 1 nm and evaluated the dependence of electrical characteristics on the silicon surface orientation. As a result, it is found that the subthreshold characteristics of (100)-surface UTB-SOI pMOSFETs were superior to (110)-surface. However, the hole mobility of (110)-surface were larger than that of (100)-surface. Especially, the enhancement of effective hole mobility at the effective field of 0.1 MV/cm was observed from 3-nm to 5-nm SOI thickness range.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.372-372
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• 2010

We have investigated adsorption of selenophene on Si(100) at room temperature using high resolution photoemission spectroscopy (HRPES) and near edge X-ray absorption fine structure (NEXAFS) in the partial electron yield (PEY) mode. The Si 2p, C 1s, Se 3d spectra of selenophene on Si(100) show that selenophene is nondissociatively chemisorbed on Si(100)-$2{\times}1$ through [2+2] cycloaddition. NEXAFS has been conducted to characterize the adsorption geometry of selenophene on Si(100). Since the $\pi^*$ orbital of C=C bond show good angular dependence in carbon K-edge NEXAFS spectra, the angle $53{\pm}5^{\circ}$ determined from NEXAFS spectra. This majority structure is consistent with the [2+2] cycloaddition of selenophene to the dimer of the Si(100)-$2{\times}1$ surface.

• Journal of the Korean Magnetics Society
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• v.5 no.5
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• pp.465-469
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• 1995

We have investigated the effects of deposition angle on structural and magnetic properties of e-beam evaporated ${(4-{\AA}\;Co/9.2-{\AA}\;Pt)}_{23}$ multilayer thin films prepared on tilted substrates. It was found that the [111] crystallographic orientations of the multilayer thin films were not aligned with colummar growth orientations and they were remained to be normal to the substrate planes even though the deposition angle was severely oblique up to $60^{\circ}$. The analysis of the torque curve reveal that the intrinsic anisotropy energy was monotonically decreased with the deposition angle but the easy axis orientation parallel to the substrate normal was not much influenced by deposition angle.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2003.10a
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• pp.58-58
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• 2003

Silver doped ZnO (SZO) films were prepared by rf magnetron sputtering on glass substrates with extraordinary designed ZnO target. With the doping source for target, use AgNO$_3$ powder on a various rate (0, 2, and 4 wt.%). We investigated dependence of coating parameter such as dopant content in target and substrate temperature in the SZO films. The SZO films have a preferred orientation in the (002) direction. As amounts of the Ag dopant in the target were increased, the crystallinity and the transmittance and optical band gap were decreased. And the substrate temperature were increased, the crystallinity and the transmittance were increased. But the crystallinity and the transmittance of SZO films were retrograde at 200$^{\circ}C$. Upside facts were related with composition. In addition, the Oxygen K-edge features of the SZO films were investigated by using near edge X-ray absorption fine structure (NEXAFS) spectroscopy. Changes of optical band gap of the SZO films were explained compared with XRD, XPS and NEXAFS spectra.

• Korean Journal of Materials Research
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• v.26 no.12
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• pp.688-695
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• 2016

Recrystallization behavior has been investigated for commercial purity AA1050 (99.5wt%Al) and high purity 3N Al (99.9wt% Al). Samples were cold rolled with 90% of thickness reduction and were annealed isothermally at 290, 315, and 350o C for various times until complete recrystallization was achieved. Hardness measurement and Electron Backscatter Diffraction(EBSD) analyses, combined with Grain Orientation Spread(GOS), were employed to investigate the recrystallization behavior. EBSD analysis combined with GOS were distinctly revealed to be a more useful method to determine the recrystallization fraction and to characterize the recrystallization kinetics. As the annealing temperature increased, recrystallization in AA1050 accelerated more than that process did in Al 3N. Both AA1050 and Al 3N showed the same temperature dependence of the n value of the Johnson-Mehl-Avrami-Kolmogorov equation(JMAK equation), i.e., n values increased as annealing temperature increased. Activation energy of recrystallization in AA1050 is about 176 kJ/mol, which is comparable with the activation energy of grain boundary migration in cold-rolled AA1050. This value is somewhat higher than the activation energy of recrystallization in Al 3N.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2003.05a
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• pp.88-92
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• 2003

In this paper, the characteristics of the ZnO films deposited on AI bottom electrode and the temperature effects on the ZnO film growth are presented along with the fabrication and their evaluation of the film bulk acoustic wave resonator (FBAR) devices. All the films used in this work were deposited using a radio-frequency (RF) magnetron sputtering technique. Growth characteristics of the ZnO films are shown to have a strong dependence on the deposition temperatures ranged from room temperature to 35$0^{\circ}C$ regardless of the RF power applied for sputtering the ZnO target. In addition, according to the growth characteristics of the distinguishably different micro-crystal structures and the degree of the c-axis preferred orientation, the deposition temperatures can be divided into 3 temperature regions and 2 critical temperatures in-between. Overall, the ZnO films deposited at/below 20$0^{\circ}C$ are seen to have columnar grains with a highly preferred c-axis orientation where the full width at half maximum (FWHM) of X-ray diffraction rocking curve is 14$^{\circ}$. Based on the experimental findings, several FBAR devices were fabricated and measured. As a result, the FBAR devices show return loss of ~19.5dB at resonant frequency of ~2.05GHz.

• Korean Journal of Materials Research
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• v.13 no.5
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• pp.279-284
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• 2003

The $CoSi_2$ process is widely employed in a salicide as well as an ohmic layer process. In this experiment, we investigated the characteristics of $CoSi_2$ films by combinations of I-type (TiN 100$\AA$/Co 150$\AA$), II-type(TiN 100$\AA$/Co 150$\AA$/Ti 50$\AA$), III-type(Ti 100$\AA$/Co 150$\AA$/Ti 50$\AA$), and IV-type(Ti 100$\AA$/Co 150$\AA$/Ti 100$\AA$). Sheet resistances of $CoSi_2$ show the lowest resistance with 2.9 $\Omega$/sq. in a TiN/Co condition and much higher resistances in conditions simultaneously applying Ti capping layers and Ti interlayers. Though we couldn't observe a $CoSi_2$roughness dependence on the film stacks from RMS values, Ti capping layers turned into 78∼94$\AA$ thick TiN layers of (200) preferred orientation at $N_2$ambient. In addition, Ti interlayers helped to form the epitaxial $CoSi_2$with (200) preferred orientation and ternary compounds of Co-Ti-Si. We propose that film structures of II-type and III-type may be appropriate in the salicide process and the ohmic layer process from the viewpoint of Co diffusion kinetics and the CoSi$_2$epitaxy.

• The Bulletin of The Korean Astronomical Society
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• v.37 no.1
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• pp.95.2-95.2
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• 2012

We have compared the geoeffective parameters of halo coronal mass ejections (CMEs) to predict geomagnetic storms. For this we consider 50 front-side full halo CMEs whose asymmetric cone model parameters and earthward direction parameter were available. For each CME we use its projected velocity (Vp), radial velocity (Vr), angle between cone axis and sky plane (${\gamma}$) from the cone model, earthward direction parameter (D), source longitude (L), and magnetic field orientation (M) of the CME source region. We make a simple and multiple linear regression analysis to find out the relationship between CME parameters and Dst index. Major results are as follows. (1) $Vr{\times}{\gamma}$ has a higher correlation coefficient (cc = 0.70) with the Dst index than the others. When we make a multiple regression of Dst and two parameters ($Vr{\times}{\gamma}$, D), the correlation coefficient increases from 0.70 to 0.77. (2) Correlation coefficients between Dst index and $Vr{\times}{\gamma}$ have different values depending on M and L. (3) Super geomagnetic storms (Dst ${\leq}$ -200 nT) only appear in the western and southward events. Our results demonstrate that not only the cone model parameters together with the earthward direction parameter improve the relationship between CME parameters and Dst index but also the source longitude and its magnetic field orientation play a significant role in predicting geomagnetic storms.

• Bulletin of the Korean Chemical Society
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• v.23 no.11
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• pp.1595-1603
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• 2002

In this paper we have presented the results of diffusion behavior of model systems for eight liquid n-alkanes ($C_{12}$-$C_{44}$) in a canonical (NVT) ensemble at several temperatures using molecular dynamics simulations. For these n-alkanes of small chain length n, the chains are clearly <$R_{ee}^2$>/6<$R_g^2$>>1 and non-Gaussian. This result implies that the liquid n-alkanes over the whole temperatures considered are far away from the Rouse regime, though the ratio becomes close to the unity as n increases. Calculated self-diffusion constants $D_{self}$ are comparable with experimental results and the Arrhenius plot of self-diffusion constants versus inverse temperature shows a different temperature dependence of diffusion on the chain length. The global rotational motion of n-alkanes is examined by characterizing the orientation relaxation of the end-to-end vector and it is found that the ratio ${\tau}1/{\tau}2$ is less than 3, the value expected for a isotropically diffusive rotational process. The friction constants ${\xi}$of the whole molecules of n-alkanes are calculated directly from the force auto-correlation (FAC) functions and compared with the monomeric friction constants ${\xi}_D$ extracted from $D_{self}$. Both the friction constants give a correct qualitative trends: decrease with increasing temperature and increase with increasing chain length. The friction constant calculated from the FAC's decreases very slowly with increasing temperature, while the monomeric friction constant varies rapidly with temperature. By considering the orientation relaxation of local vectors and diffusion of each site, it is found that rotational and translational diffusions of the ends are faster than those of the center.