• 한국전기전자재료학회논문지
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• 제23권4호
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• pp.343-346
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• 2010

We have investigated growth of CdTe thin films by using (As, GaAs) buffer layers for application of large scale IR focal plane arrays(IFPAs). Buffer layers were grown by molecular beam epitaxy(MBE), which reduced the lattice mismatch of CdTe/Si and prevented native oxide on Si substrates. CdTe thin films were grown by metal organic chemical deposition system(MOCVD). As a result, polycrystalline CdTe films were grown on Si(100) and arsenic coated-Si(100) substrate. In other case, single crystalline CdTe(400) thin film was grown on GaAs coated-Si(100) substrate. Moreover, we observed hillock structure and mirror like surface on the (400) orientated epitaxial CdTe thin film.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2007년도 7th International Meeting on Information Display 제7권1호
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• pp.467-470
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• 2007

Ultrafine Indium tin oxide (ITO) nanoparticle was successfully fabricated by low temperature synthetic method (LTSM). Mean size of ITO nanoparticle is 5 nm, and uniformly dispersed with (222) orientated cubic structure. Using the nanoparticle, ITO thin film with good optical and electrical properties was fabricated by inkjet printing.

• 한국결정성장학회지
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• 제13권4호
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• pp.157-164
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• 2003

$LaF_{3}$ thin films have been fabricated on Si (100) substrates under the highest possible vacuum condition by pulsed laser deposition (PLD) method. The temperature of the sbustrate varied from $20^{\circ}C$ to $800^{\circ}C$. The films deposited at the higher temperature indicated the sharper peaks in the X-ray diffraction measurement. A highly oriented film was successfully obtained at a substrate temperature of $800^{\circ}C$. The surface observation by the AFM revealed that the many hexagonal structures constructed the film. The XPS analysis revealed that the lacking of F in the film deposited at $600^{\circ}C$ were much more than that in film at $^20{\circ}C$. Adding the adequate amount of $CF_{4}$ gas in the growth chamber can compensate this lacking of F.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 하계학술대회 논문집
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• pp.208-211
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• 2000

We prepared Co-Cr-Ta and Co-Cr-Ta/Ti thin film for perpendicular magnetic recording media by facing targets sputtering system (FTS system). Ti underlayer effects on crystallographic and magnetic characteristics of Co-Cr-Ta perpendicular magnetic recording media have been investigated. Crystallgraphic and magnetic characteristic of prepared thin films were evaluated by x-ray diffractometry(XRD), vibrating sample magnetometer(VSM) and kerr hysteresis loop measurement. The coercivity and anisotropy field increase by introduced Ti underlayer when substrate temperature is higher than 150$^{\circ}C$. The c-axis dispersion angle and grain size of Co-Cr-Ta/Ti thin film is decrease than Co-Cr-Ta when substrate temperature is higher than 100$^{\circ}C$. Consequently, the use of a Ti underlayer highly orientated can be improved crystallographic and magnetic characteristics of Co-Cr -Ta perpendicular media layer.

• 한국전기전자재료학회논문지
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• 제22권5호
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• pp.419-424
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• 2009

ZnO films doped with different contents of indium ($0.1{\sim}10$ at.%) were deposited on Si (111) substrate by Pulsed Laser Deposition (PLD). The structural, electrical and optical properties of the films were investigated using XRD, AFM, Hall and PL measurement. Results showed that un-doped ZnO film had (002) plane as the c-axis orientated growth, whereas indium doped ZnO films exhibited the peak of (002) and the weak (101) plane. In addition, in the indium doped ZnO films, the electron concentration is ten times higher than that of un-doped ZnO film, while the resistivity is ten times lower than that of un-doped ZnO film. The indium doped ZnO films have UV emission about 380 nm and show a red shift with increasing contents of indium. The I-V curve of the fabricated diode show the typical diode characteristics and have the turn on voltage of about 2 V.

• 한국자기학회:학술대회 개요집
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• 한국자기학회 2004년도 동계학술연구발표회 논문개요집
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• pp.219-220
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• 2004

Superparamagnetic regions and magnetic anisotropic properties in randomly orientated Co nano dots(NDs) were investigated as a function of dot diameter, spacing, and density. The Co NDs were fabricated by intentionally exposing a laser source on ultra thin film. Various dot sizes are ultimately realized by changing laser power, scan condition, and intial film thickness. Magnetic hysteresis loops, angle-dependent magnetization, and temperature dependence magnetization of the Co NDs were measured with a superconducting quantum interference device. The analysis of magnetization and hysteresis loops was effectively used to determine superparamagnetic regions of the Co NDs. Up to now, the experimentally observed results repeal that room temperature superparamagnetic limit of our Co NDs was about 30 nm in diameter, with the confirmation of high resolution transmission electron microscope.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 하계학술대회 논문집 Vol.7
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• pp.366-367
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• 2006

Different orientated SBN thin films were deposited by Ion Beam Sputtering, and electric properties were measured on each orientation. Ferroelectric $Sr_xBa_{1-x}Nb_2O_6$(SBN) has excellent electro-optic, photo-refractive, piezoelectric, pyroelectric properties. SBN thin film has been deposited by various method, of sol-gel, PLD, CVD, sputtering, etc.. To avoid lead pollution of Pb-system perovskite ferroelectric materials. SBN thin films were fabricated for pyroelectric IR sensor. Using the ceramic target of the same composition and Pt(100)/$TiO_2/SiO-2$/Si(100) substrate, crystallization and orientation behavior as well as electric properties of the films were examined. Seed layer and thin films thickness was controlled to observe the effect on preferred orientation. We measured I-V, C-V, P-E hysteresis to characterize electric-properties on each orientations.

• 한국표면공학회지
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• 제36권2호
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• pp.122-127
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• 2003

Ti - Si - N hard films were deposited on SKD11 steel substrates by a hybrid deposition system, where TiN was deposited by AIP method while Si was incorporated by sputtering one. The microstructure of Ti-Si-N films was revealed to be a composite of TiN crystallites and amorphous Si3N4 by instrumental analyses. The highest hardness value of about 45 Gpa was obtained at the Si content of around 7.7 at.%. With increase of Si content, the size of TiN crystallites was reduced and their distribution was changed from aligned to randomly orientated states. Surface roughness of Ti-Si-N film also decreased with increase of Si content.

• 한국초전도저온공학회:학술대회논문집
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• 한국초전도저온공학회 2003년도 학술대회 논문집
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• pp.95-97
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• 2003

Y$_2$O$_3$ buffer layers have been fabricated on Ni tapes via MOD process. Films were annealed either in reductive or oxidative condition Successfully (200) orientated buffer layers were grown. The out-of-plane orientation of film were characterized by Δ$\theta$ is about 5.4$^{\circ}$. Although films prepared with acetic acid contains a large amount of microcrack, those prepared with 2-MOE(2-methoxy ethanol) exhibit a crack-free surface.

• 한국전기전자재료학회논문지
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• 제16권11호
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• pp.1035-1040
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• 2003

High $T_{c}$ superconducting B $i_2$S $r_2$CaC $u_2$ $O_{8+d}$ (BSCCO2212) films were prepared by a metallorganic decomposition (MOD) method. The metal organic solution of BSCCO2212 was spin-coated on MgO (100) substrates at 3000 rpm for 1 min. To achieve a high critical current density, we controlled heat-treatment conditions and atmosphere. The films were annealed at temperature 75$0^{\circ}C$ ∼ 80$0^{\circ}C$ in $O_2$ or air. We obtained c-axis orientated BSCCO thin films on MgO substrates. The annealed sample at 77$0^{\circ}C$ with $O_2$ showed the critical temperature about 77 K and critical current denstity of 1.19 ${\times}$ 10$^{5}$ A/$\textrm{cm}^2$ about 13 K.