• Title/Summary/Keyword: Organic substrates

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Chemical Vapor Deposition of β-LiGaO2 Films on Si(100) Using a Novel Single Precursor

  • Sung, Myung M.;Kim, Chang G.;Kim, Yun-Soo
    • Bulletin of the Korean Chemical Society
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    • v.25 no.4
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    • pp.480-484
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    • 2004
  • $LiGaO_2$ films have been grown on Si (100) substrates using a new single precursor $[Li(OCH_2CH_2OCH_3)_2-Ga(CH_3)_2]_2$ under high vacuum conditions $(5{\times}10^{-6}Torr)$. The $[Li(OCH_2CH_2OCH_3)_2Ga(CH_3)_2]_2$ was synthe-sized and characterized by using spectroscopic methods and single-crystal X-ray diffraction analysis. The chemical composition, crystalline structure, and morphology of the deposited films were investigated by X-ray photoelectron spectroscopy, X-ray diffraction, and scanning electron microscopy. The results show that polycrystalline $LiGaO_2$ films preferentially oriented in the [010] direction can be deposited on Si (100) at 500-550$^{\circ}C$ by metal organic chemical vapor deposition (MOCVD). The single precursor $[LiOCH_2CH_2OCH_3)_2-Ga(CH_3)_2]_2$ has been found suitable for chemical vapor deposition of $LiGaO_2$ thin films on Si substrates.

Lifetime characteristics of flexible organic light emitting diodes on PET substrate with plasma polymer barrier layers

  • Kim, Kyu-Hyung;Kho, Sam-Il;Jung, Dong-Geun;Boo, Jin-Hyo
    • 한국정보디스플레이학회:학술대회논문집
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    • 2004.08a
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    • pp.41-43
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    • 2004
  • Plasma polymerized para-xylene ($PP_PX$) deposited by plasma-enhanced chemical vapor deposition (PECVD) was used as the barrier layer on the polyethylene terephthalate (PET) substrate to improve lifetime of the flexible organic light-emitting diodes (FOLEDs). The $PP_PX$ barrier layer deposited on top of the PET substrate with plasma power of 30 W at deposition pressure of 0.2 torr showed transmittance spectra good enough to be applied in FOLED on PET substrates. FOLEDs with the $PP_PX$ barrier layer (barrier-FOLEDs) showed similar I-V and B-V characteristics to FOLEDs without the $PP_PX$ layer (control-FOLEDs). The lifetime of barrier-FOLED was two times longer than that of the control-FOLED. With $PP_PX$ passivation layers, lifetimes of both control and barrier-FOLEDs were improved by more than 4 times. These results show that PECVD deposited $PP_PX$ layers can be used as barrier layers for FOLEDs on plastic substrates as well as passivation layers for general OLEDs.

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Laser Sintering of Silver Nanoparticle for Flexible Electronics (유연소자 응용을 위한 은 나노입자의 레이저 소결)

  • Jia, Seok Young;Park, Won Tea;Noh, Yong-Young;Chang, Won Seok
    • Journal of the Korean Society of Manufacturing Technology Engineers
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    • v.24 no.1
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    • pp.135-139
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    • 2015
  • We present a fine patterning method of conductive lines on polyimide (PI) and glass substrates using silver (Ag) nanoparticles based on laser scanning. Controlled laser irradiation can realize selective sintering of conductive ink without damaging the substrate. Thus, this technique easily creates fine patterns on heat-sensitive substrates such as flexible plastics. The selective laser sintering of Ag nanoparticles was managed by optimizing the conditions for the laser scan velocity (1.0-20 mm/s) and power (10-150 mW) in order to achieve a small gap size, high electrical conductivity, and fine roughness. The fabricated electrodes had a minimum channel length of $5{\mu}m$ and conductivity of $4.2{\times}10^5S/cm$ (bulk Ag has a conductivity of $6.3{\times}10^5S/cm$) on the PI substrate. This method was used to successfully fabricate an organic field effect transistor with a poly(3-hexylthiophene) channel.

Effects of Substrates Supplemented with Crushed Shell, Elvanite and bioceramic on the Growth of Rice(Oryza sativa L.) (패화석, 맥반석 및 바이오세라믹의 혼입처리 벼의 생육에 미치는 영향)

  • 박순기;김홍기;정순주
    • Korean Journal of Organic Agriculture
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    • v.6 no.1
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    • pp.127-132
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    • 1997
  • This experiment was carried out to examine the effect of various functional materials such as bioceramic podwers, crushed shells and elvanites supplemented to the each substrate on the seedlings growth of rices. The rice seedlings were grown in pots filled with substrates supplemented with bioceramic podwers, crushed shells and elvanites. The growth of rice seedlings in terms of plant height, stem diameter, root length and leaf width, plant fresh and dry weight was promoted by adding the bioceramic powders (2 to 3g/kg), crushed shells (10g/kg) or elvanites (20 to 40g/kg). Plant height was also promoted by the adding of bioceramic powder from 16 days after treatment, whereas crushed shells and elvanites from 10 days after treatment. Especially, root growth was greatly influenced by bioceramic powder, whereas the shoot growth(leaves and stem) was stimulated by the crushed shells and elvanites supplemented into each substrate. In the field, plant growth in terms of plant height, leaf length and leaf width were also influenced by crushed shells and elvanites at 74 days after treatment. The growth of rices in terms of tiller number, spikelets, panicles and spikelets/panicle was incresed by adding the crushed shells and elvanites from 100 to 200g per m2.

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Development of flexible 3.5' QCIF (176 X144 pixels) OTFT driven OLED;Integration technologies compatible with normal semiconductor processes

  • Kang, Seung-Youl;Ahn, Seong Deok;Oh, Ji-Young;Kim, Gi-Hyun;Koo, Jae Bon;You, In-Kyu;Kim, Chul-Am;Hwang, Chi-Sun;KoPark, Sang-Hee;Yang, Yong-Suk;Chung, Sung-Mook;Lee, Jeong-Ik;Chu, Hye-Yong;Suh, Kyung-Soo
    • 한국정보디스플레이학회:학술대회논문집
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    • 2007.08a
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    • pp.62-65
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    • 2007
  • Conventional semiconductor processes have been utilized to fabricate 3.5-inch OTFT-driven OLEDs with a resolution of $176\;{\times}\;144$ pixels on plastic substrates. By using a PC-OVD method to deposit a pentacene layer and optimizing patterning and the following processes, we could complete a uniform and reliable integration procedure for an active matrix organic light emitting devices on a plastic substrate. The technical importance of ours is the applicability of conventional semiconductor process to organic materials on plastic substrates. Although there are many hurdles to overcome, our approach and technical improvements are proved to be applicable to plastic electronics.

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MOCVD of GaN Films on Si Substrates Using a New Single Precursor

  • Song, Seon-Mi;Lee, Sun-Sook;Yu, Seung-Ho;Chung, Taek-Mo;Kim, Chang-Gyoun;Lee, Soon-Bo;Kim, Yun-Soo
    • Bulletin of the Korean Chemical Society
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    • v.24 no.7
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    • pp.953-956
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    • 2003
  • Hexagonal GaN (h-GaN) films have been grown on Si(111) substrates by metal organic chemical vapor deposition using the azidodiethylgallium methylamine adduct, Et₂Ga(N₃)·NH₂Me, as a new single precursor. Deposition was carried out in the substrate temperature range 385-650 °C. The GaN films obtained were stoichiometric and did not contain any appreciable amounts of carbon impurities. It was also found that the GaN films deposited on Si(111) had the [0001] preferred orientation. The photoluminescence spectrum of a GaN film showed a band edge emission peak characteristic of h-GaN at 378 nm.

Electrical Properties of Organic PVA Gate Insulator Film on ITO/Glass Substrates (ITO/glass 기판위에 제작된 Cross linked PVA 유기 게이트 절연막의 전기적 특성)

  • Choi, Jin-Eun;Gong, Su-Cheol;Jeon, Hyeong-Tag;Park, Hyung-Ho;Chang, Ho-Jung
    • Journal of the Semiconductor & Display Technology
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    • v.9 no.4
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    • pp.1-5
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    • 2010
  • The PVA (poly-vinyl alcohol) insulators were spun coated onto ITO coated glass substrates with the capacitors of Glass/ITO/PVA/Al structure. The effects of PVA concentrations (3.0, 4.0 and 5.0 wt%) on the morphology and electrical properties of the films were investigated. As the concentration of PVA increased from 3.0 to 5.0 wt%, the leakage current of device decreased from 17.1 to 0.23 pA. From the AFM measurement, the RMS value decreased with increasing PVA concentration, showing the improvement of insulator film roughness. The capacitances of the films with PVA concentrations of 4.0 and 5.0 wt% were about 28.1 and 24.2 nF, respectively. The lowest leakage current of 1.77 PA was obtained at the film thickness of 117.5 nm for the device with fixed PVA concentration of 5.0 wt%.

Laser-Induced Direct Copper Patterning Using Focused $Ar^+$ Laser Beam (집속 아르곤 이온 레이저 빔을 이용한 레이저 유도 직접 구리 패터닝)

  • Lee, Hong-Kyu;Lee, Kyoung-Cheol;Ahn, Min-Young;Lee, Cheon
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.13 no.11
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    • pp.969-975
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    • 2000
  • Laser direct writing of micro-patterned copper lines has been achieved by pyrolytic decomposition of copper formate films (Cu(HCOO)$_2$.4$H_2O$), as a metallo-organic precursor, using a focused CW Ar$^{+}$ laser beam (λ=514nm) on PCB boards and glass substrates. The linewidth and thickness of the lines wee investigated as a functin of laser power and scan speed. The profiles of the lines were measured by scanning electron microscope (SEM), surface profiler ($\alpha$-step) and atomic force measured by scanning electron microscope (SEM), surface profiler ($\alpha$-step) and atomic force microscopy (AFM). The electrical resistivities of the patterned lines were also investigated as a function of laser parameters using probe station and semiconductor analyzer. We compared resistivities of the patterned copper lines with these of the Cu bulk. Resistivities decreased due to changes in morphology and porosity of the deposit, which were about 3.8 $\mu$$\Omega$cm and 12$\mu$$\Omega$cm on PCB and glass substrates after annealing at 30$0^{\circ}C$ for 5 minutes.s.

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