• Proceedings of the Korean Vacuum Society Conference
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.427-427
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• 2012

Ferroelectric-gate field effect transistor based memory using a nanowire as a conducting channel offers exceptional advantages over conventional memory devices, like small cell size, low-voltage operation, low power consumption, fast programming/erase speed and non-volatility. We successfully fabricated ferroelectric nonvolatile memory devices using both n-type and p-type Si nanowires coated with organic ferroelectric poly(vinylidene fluoride-trifluoroethylene) [P(VDF-TrFE)] via a low temperature fabrication process. The devices performance was carefully characterized in terms of their electrical transport, retention time and endurance test. Our p-type Si NW ferroelectric memory devices exhibit excellent memory characteristics with a large modulation in channel conductance between ON and OFF states exceeding $10^5$; long retention time of over $5{\times}10^4$ sec and high endurance of over 105 programming cycles while maintaining ON/OFF ratio higher $10^3$. This result offers a viable way to fabricate a high performance high-density nonvolatile memory device using a low temperature fabrication processing technique, which makes it suitable for flexible electronics.

• Applied Chemistry for Engineering
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• 제31권5호
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• pp.467-474
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• 2020

Polymer solar cells have attracted extensive attention over the past decade due to their benefits, such as good solution-process-ability, light weight, low-cost, mechanically flexibility, and high efficiency. Conjugated (CPE) and non-conjugated (NPE) polyelectrolyte materials have been employed to avoid the typical weaknesses associated with conventional metal oxide interlayers. However, the application of CPEs is more complicated than that of NPEs because the synthesis procedures are complicated. NPEs containing charged ion groups can provide numerous benefits for renewable energy applications. Especially when implemented in polymer solar cells.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 한국표면공학회 2012년도 추계총회 및 학술대회 논문집
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• pp.186-186
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• 2012

최근 Flexible organic electronics 분야에 대한 관심과 더불어 소자의 산소 및 수분의 침투를 방지하기 위한 투습방지막 연구가 활발히 진행되고 있다. 이에 본 연구에서는 Closed Drift Linear Source(CDLPS) 플라즈마 공정을 이용하여 저온 고속의 $SiO_xC_yH_z$ barrier flims 형성 연구를 진행하였다. HMDSO(hexamethyldisiloxane), TMS(trimethylsilane)와 산소를 기반으로 HMDSO/HMDSO+산소의 비율에 따라 $Si(-O_x)$ 변화에 따른 특성 평가를 진행하였다. X-ray photoelectrom spectroscopy(XPS) 및 Ft-IR spectrometer 측정 시 3.7% 비율에서 실리콘 원소가 산소 라디칼과 효율적인 반응을 함으로써 단일한 $SiO_2$ 박막이 형성됨을 확인 하였다. 그와 반면에 비율의 증가로 인해 다량의 HMDSO 물질이 주입 되었을 시 산소 라디칼과 충분히 반응 되지 못하여 $SiO_2$에 비해 $Si(CH)_x$ 가 많이 함량 된 Polymer like한 $SiO_x$가 많이 형성되었다. 박막의 증착율의 경우에는 3.7%에서 18%로 증가함에 따라 35 nm/min에서 180 nm/min의 증착율을 가지는 것을 확인 하였다. 3.7% 비율의 단일 $SiO_2$ 공정 조건으로 유기태양전지에 형성 하였을 시 소자의 에너지 변환 효율(PCE)이 변화 없는 것을 확인하였다. 이는 기존 공정에 비해 CDLPS 플라즈마 공정의 경우 유기소자에 플라즈마로 인한 열에너지나 이온 충격 에너지로 인한 영향 없는 것을 확인 할 수 있다. 이런 장점을 통해 CDSPS를 이용한 공정 기술은 다양한 유기 소자의 barrier 형성 연구에 큰 도움이 될 것이다.

• Bulletin of the Korean Chemical Society
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• 제26권8호
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• pp.1260-1264
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• 2005

Three new quaternary tantalum thiophosphates, $K_{0.18}TaPS_6,\;K_{0.28}TaPS_6,\;and\;Rb_{0.09}TaPS_6$ have been synthesized by using reactive alkali metal halide fluxes and structurally characterized by single crystal X-ray diffraction techniques. The crystal structures of $K_{0.18}TaPS_6,\;K_{0.28}TaPS_6,\;and\;Rb_{0.09}TaPS_6$ contain 3-dimensional open framework anions, $[TaPS_6]^{x-}$(x = 0.09, 0.18, 0.28) with the empty channel which disordered alkali metal cations, $K^+\;and\;Rb^+$ are located in. Crystal data: $K_{0.18}TaPS_6$, tetragonal, space group$I4_1$/acd (no. 142), a=15.874(3) $\AA$, c=13.146(4) $\AA$, V=3312.7(12) ${\AA}^3$, K, Z=16, R1=0.0545. Crystal data: $K_{0.28}TaPS_6$, tetragonal, space group $I4_1$/acd (no. 142), a=15.880(2) $\AA$, c=13.134(3) $\AA$, V=3312.1(10) ${\AA}^3$, Z=16, R1=0.0562. Crystal data: $Rb_{0.09}TaPS_6$, tetragonal, space group I41/acd (no. 142), a=15.893(3) $\AA$, c=13.163(4) $\AA$, V=3324.7(15) ${\AA}^3$, Z=16, R1=0.0432.

• Proceedings of the Materials Research Society of Korea Conference
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• 한국재료학회 2009년도 춘계학술발표대회
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• pp.34.1-34.1
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• 2009

A great deal of attention has been focused on ZnO nanowires for various electronics and optoelectronics applications. in the pursuit of next generation nanodevices, it would be highly preferred if well-ordered ZnO nanowires of lower dimension could be fabricated on silicon. Before the growth of nanowires, silicon substrates were selectively etched using silicon nitride as masking layer. Vertical aligned ZnO nanowires were grown by metal organic chemical vapor deposition on patterned silicon substrate. The shape of nanostructures was greatly influenced by the micropatterned surface of the substrate. The aspect ratio, packing fraction and the number density of nanowires on top surface are around 10, 0.8 and $10^7\;per\;mm^2$, respectively, whereas the values are 20, 0.3 and $5\times10^7\;per\;mm^2$, respectively, towards the bottom of the cavity. XRD patterns suggest that the nanostructures have good crystallinity. High-resolution transmission electron microscopy confirmed the single crystalline growth of the ZnO nanowires along [0001] direction.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 한국전기전자재료학회 2007년도 추계학술대회 논문집
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• pp.96-96
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• 2007

Low voltage organic TFTs (OTFTs) and ZnO based TFTs (<5V), utilizing room temperature deposited $Bi_{1.5}Zn_{1.0}Nb_{1.5}O_7$ (BZN) thin films were recently reported, pointing to high-k gate insulators as a promising route for realizing low voltage operating flexible electronics. $Bi_{1.5}Zn_{1.0}Nb_{1.5}O_7$ (BZN) thin film is one of the most promising materials for gate insulator because of its large dielectric constant (~60) at room temperature. However their tendency to suffer from relatively high leakage current at low electric field (>0.3MV/cm) hinder the application of BZN thin films for gate insulator. In order to improve leakage current characteristics of BZN thin film, we mixed 30mol% MgO with 70mol% BZN and their dielectric and electric properties were characterized. We fabricated field-effect transistors with transparent oxide semiconductor ZnO serving as the electron channel and high-k $(Bi_{1.5}Zn_{1.0}Nb_{1.5}O_7)_{0.7}(MgO)_{0.3}$ as the gate insulator. The devices exhibited low operation voltages (<4V) due to high capacitance of the $(Bi_{1.5}Zn_{1.0}Nb_{1.5}O_7)_{0.7}(MgO)_{0.3}$ dielectric.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 한국전기전자재료학회 2006년도 하계학술대회 논문집 Vol.7
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• pp.442-443
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• 2006

Electrical, optical, surface, and structural properties of amorphous indium zinc oxide (IZO) films grown on $SiO_2$/PES/$SiO_2$ substrate by a RF sputtering in pure Ar ambient at room temperature were investigated. A sheet resistance of $13.5\;{\Omega}{\square}$, average transmittance above 85 % in 550 nm, and root mean square roughness of $10.5\;{\AA}$ were obtained even in the IZO layers grown at room temperature in pure Ar ambient. Without addition of oxygen gas during IZO sputtering process, we can obtain high quality IZO anode films from the specially synthesized oxygen rich IZO target. XRD result shows that the IZO films grown at room temperature is completely amorphous structure due to low substrate temperature. In addition, the electrical and optical properties of the flexible OLED fabricated on IZO/$SiO_2$/PES/$SiO_2$ is critically influenced by the electrical properties of a IZO anode. This findings indicate that the IZO/$SiO_2$/PES/$SiO_2$ is a promising anode/substrate scheme for realizing organic based flexible displays.

• Polymer(Korea)
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• 제28권5호
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• pp.367-373
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• 2004

Novel non-conjugated blue light-emitting copolymers containing perylene and triazine moieties as light emitting and electron transporting units, respectively in the polymer side chain were synthesized. The resulting copolymers were soluble in most organic solvents such as chlorobenzene, THF, chloroform and benzene. The single-layered electroluminescence (EL) device consisting of indium tin oxide (ITO) /copolymer/aluminium (Al) exhibited a maximum external quantum efficiency ($0.003\%$) and a good carrier balance when the triazine content was $30\%$. In particular, the device emitted blue light (479 nm) corresponding to the emission of perylene moiety. The drive voltage was observed at 5 V and the CIE coordinate was x=0.16, y=0.17.

• Molecules and Cells
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• 제28권5호
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• pp.447-453
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• 2009

The quorum sensing (QS) inhibitors that antagonize TraR, a receptor protein for N-3-oxo-octanoyl-L-homoserine lactones (3-oxo-C8-HSL), a QS signal of Agrobacterium tumefaciens were developed. The structural analogues of 3-oxo-C8-HSL were designed by in silico molecular modeling using SYBYL packages, and synthesized by the solid phase organic synthesis (SPOS) method, where the carboxamide bond of 3-oxo-C8-HSL was replaced with a nicotinamide or a sulfonamide bond to make derivatives of N-nicotinyl-L-homoserine lactones or N-sulfonyl-L-homoserine lactones. The in vivo inhibitory activities of these compounds against QS signaling were assayed using reporter systems and compared with the estimated binding energies from the modeling study. This comparison showed fairly good correlation, suggesting that the in silico interpretation of ligand-receptor structures can be a valuable tool for the pre-design of better competitive inhibitors. In addition, these inhibitors also showed anti-biofilm activities against Pseudomonas aeruginosa.

• Applied Chemistry for Engineering
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• 제23권2호
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• pp.157-163
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• 2012

Using six kinds of epoxy acrylates and a conductive carbon black, photosensitive resistor pastes were fabricated and then their developability in alkaline aqueous solution and the resistance values after thermal curing were evaluated. In order to impart the photocurability by UV exposure and the developability on alkaline solution, epoxy acrylate oligomers with carboxyl group, acrylate monomers, a photoinitiator and so forth were used. In addition, an organic peroxide was added into the paste to get a thermally curable composition. As a result, some of the pastes were not developed depending on the kinds of oligomers and, in the developed pastes, the measured resistance showed the different values depending on their compositions, even though they contain the same amount of carbon black. Finally, the optimum oligomer was selected and then, by adjusting the amount of carbon black, the kind of monomer and the curing temperature, the photosensitive resistor paste composition which showed the sheet resistance of about 0.5 $k{\Omega}/sq.$ could be obtained.