• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2009년도 9th International Meeting on Information Display
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• pp.579-582
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• 2009

This paper reports the electrical characteristics of polyvinylpyrrolidone (PVPy) and the performance of organic thin-film transistors with PVPy as a gate insulator. PVPy shows a dielectric constant of about 3 and contributes to the upright growth of pentacene molecules with 15.3${\AA}$ interplanar spacing. These results will be discussed.

• 대한안전경영과학회지
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• 제6권1호
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• pp.301-309
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• 2004

An inorganic filling agent, ATH (alumina trihydrate) was used to induce inorganic-organic coupling by mixing with stearic acid, acryl silane, vinyl silane as surface treatment agents in order to apply as a high voltage insulating material. Volumetric resistivity was shown to vary with surface treatment agents, and the highest value was obtained in case of the mixture with vinyl silane. The dielectric breakdown intensity was shown to decrease gradually and saturate to a stable value, possibly due to the increase of cross link density in the vinyl radicals introduced to silica surface, resulting in stable dielectric breakdown intensity in the final stages. Tracking and flame retardant properties were also shown to be the best among the samples investigated in this study.

• 한국응용과학기술학회지
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• 제23권3호
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• pp.238-242
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• 2006

Polyimide is a well-known organic dielectric material, which has not only high chemical and thermal stability but also good electrical insulating and mechanical properties. In this research, the electric conduction mechanism of PI Ultra-Thin Films was investigated at room temperature. At low electric field, ohmic conduction $(I{\propto}V)$ was observed and the calculated electrical conductivity was about $4.23{\times}10^{-15}{\sim}9.81{\times}10^{-15}\;S/cm$. At high electric field, nonohmic conduction $(I{\propto}V^2)$ was observed and the conduction mechanism was explained by space charge limited region effect. The dielectric constant of PI Ultra-Thin Films was about 7.0.

• 대한전자공학회논문지
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• 제19권5호
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• pp.5-11
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• 1982

슬라이드 글라스와 위에 1μm 가량의 산화막을 입힌 실리콘 웨이퍼 위에, 폴리우레탄이나 에폭시 등의 유기 물질을 스핀너 (spinner)로 코우팅시켜서 평판형 유전체 도파관(dielectric slab waveguide)을 제작하고, 프리즘으로 빛을 커플링 (coupling) 시켜서 광도파 현상을 화인했다. 실리콘 웨이퍼나 슬라이드 글라스 위에다 알루미늄이나 은(Ag)을 진공증착시킨 것을 기관으로 사용하여 금각판 도파관(metal clad waveguide)을 제작하고, 프리즘 2개로 커플링 (coupling), 디커플링 (decoupling)시켜서 모우드 라인(mode line)을 관찰했다. 포토리지스트 K. P. R.의 굴절율이 폴리우레탄의 굴절율보다 큰 점을 이용하여 2층 구조의 박막 프리즘을 제작하고 빛이 꺾이는 현상을 확인했다.

• 한국군사과학기술학회지
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• 제5권3호
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• pp.105-112
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• 2002

A combined process of non-thermal plasma and catalytic techniques has been investigated to treat toxic gas compounds in air. The treated gas in the present study is $CH_3$CN that has been known to be a simulant of toxic chemical agent. A planar type dielectric barrier discharge(DBD) reactor has been used to generate non-thermal plasma that produces various chemically active species, O, N, OH, $O_3$, ion, electrons, etc. Several different types of adsorbents and catalysts, which are MS 5A, MS 13X, Pt/alumina, are packed into the plasma reactor, and have been tested to save power consumption and to treat by-products. Various aspects of the present techniques, which are decomposition efficiencies along with the power consumption, by-product analysis, reaction pathways modified by the adsorbents and catalysts, have been discussed in the present study.

• 한국대기환경학회지
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• 제19권2호
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• pp.157-165
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• 2003

A combined process of non-thermal plasma and catalytic technique has been investigated to treat $CH_3$CN gas in the atmosphere. A planar type dielectric barrier discharge (DBD) reactor has been used to generate the non-thermal plasma that produces various chemically active species, such as O, N, OH, $O_3$, ion, electrons, etc. Several different types of the beads. which are Molecular Sieve (MS) 5A, MS 13X, Pt/alumina beads, are packed into the DBD reactor, and have been tested to characterize the effects of adsorption and catalytic process on treating the $CH_3$CN gas in the DBD reactor. The test results showed that the operating power consumption and the amounts of the by-products of the non-thermal plasma process can be reduced by the assistance of the adsorption and catalytic process.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2007년도 7th International Meeting on Information Display 제7권1호
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• pp.717-720
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• 2007

We fabricated the 3.5 inch QCIF AMOLED panel with ultra low temperature polycrystalline silicon TFT on the plastic substrate. To reduce the leakage current, we used the triple layered gate metal structure. To reduce the stress from inorganic dielectric layer, we applied the organic interlayer dielectric and the photoactive insulating layer. By using the interlayer dielectric as a capacitor, the mask steps are reduced up to five.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1996년도 추계학술대회 논문집 학회본부
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• pp.258-260
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• 1996

We fabricated MIM device using copolymer LB films of $C_{18}MA-VE_2$. Electric and dielectric properties of MIM device were investigated. In our experimental results, the thickness of maleate copolymer LB film by elipsometry measurements was about $27{\sim}30[\AA]$. Conductivity was found to be $10^{+15}{\sim}10^{-14}[S/cm]$. The maleate copolymer LB film have the property of insulator like organic ultra-thin film. Frequency-dependent dielectric properties was orientational polarization by the dipole.

• 대한전자공학회논문지SD
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• 제44권11호
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• pp.15-19
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• 2007

OTFTs (Organic Thin Film Transistors)의 구동에 있어, 게이트 절연막 표면과 채널의 계면상태가 소자의 전기적 특성에 큰 영향을 미치게 된다. OTS(Octadecyltrichlorosilane)등과 같은 습식 SAM(Self Assembly Monolayer)를 이용하거나, $O_2$ Plasma와 같은 건식 표면 처리등 여러 표면 처리법에 대한 연구가 진행되고 있다. 본 논문에서는 pentacene을 진공 증착하기 전에 게이트 절연막을 $O_2$ plasma와 Ar ion beam을 이용하여 건식법으로 전처리 한 후 표면 특성을 atomic force microscope (AFM) and X-ray photoelectron spectroscopy (XPS)를 사용하여 비교 분석하였고, 각 조건으로 OTFT를 제작하여 전기적 특성을 확인하였다. Ar ion beam으로 표면처리 했을 때, $O_2$ plasma처리했을 때 보다 향상된 on/off ratio 전기적 특성을 얻을 수 있었다. 표면 세정을 위하여 $O_2$ plasma 처리시 $SiO_2$ 표면의 OH-기와 반응하여 oxide trap density가 높아지게 되고 이로 인하여 off current가 증가하는 문제가 발생한다. 불활성 가스인 Ar ion beam 처리를 할 경우 게이트 절연막의 세정 효과는 유지하면서, $O_2$ Plasma 처리했을 때 증가하게 되는 계면 trap을 억제할 수 있게 되어, mobility 특성은 동등 수준으로 유지하면서 off current를 현저하게 줄일 수 있게 되어, 결과적으로 높은 on/off ratio를 구현할 수 있다는 것을 확인하였다.

• 마이크로전자및패키징학회지
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• 제11권1호
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• pp.87-96
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• 2004

폴리머/세라믹 복합체는 유기기판용 내장형 커패시터의 가장 유망한 재료다. 폴리머/세라믹 복합체의 유효유전상수를 예측하는 것은 복합재료의 설계에 있어 매우 중요하다. 본 논문에서는 크기가 다른 5가지 $BaTiO_3$ 분말을 이용하여 분말함량에 따른 에폭시/$BaTiO_3$ 복합 내장형 커패시터 필름의 유전상수를 측정하였다. 그 측정 결과를 여러 가지 이론식들에 최소 자승법을 이용해 fitting하여 폴리머/세라믹 복합체의 유효유전상수를 예측하는데 가장 유용한 식을 찾고 BaTiO$_3$ 분말의 유전상수를 추정하고자 하였다. Lichtenecker식과 Jayasundere-Smith식이 에폭시/$BaTiO_3$ 복합 내장형 커패시터 필름의 유전상수 예측에 유용한 것으로 나타났다. 피팅을 통해 계산된 $BaTiO_3$ 분말의 유전상수는 분말의 크기에 따라 100 에서 600 사이였는데 이는 다결정 세라믹 $BaTiO_3$의 유전상수보다 작은 값이다.