• Journal of Powder Materials
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• v.10 no.2
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• pp.123-128
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• 2003

$TiO_2$ nanopowder was synthesized by chemical vapor condensation (CVC) process and its photocatalytic property depending on microstructure was considered in terns of decomposition rate of organic compound. In order to control microstructure of $TiO_2$ nanopowder such as particle size and degree of agglomeration, precursor flow rate representing number concentration was changed as a process variable. In TEM observation, spherical $TiO_2$ nanoparticles with average size of 20 nm showed gradual increases in particle size and degree of agglomeration with increase of precursor flow rate. Also decomposition rate of organic compound increased with decreasing precursor flow rate. Thus, it was concluded that photocatalytic property was enhanced by targe surface area of disperse $TiO_2$ nanoparticles synthesized at lower precursor flow rate condition in CVC process.

• Korean Membrane Journal
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• v.2 no.1
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• pp.48-55
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• 2000

In order to improve organic vapor separation efficiency of polydimethylsiloxane (PDMS) membrane, various zeolites (zeolite 4A, zeolite 13X and natural zeolite) were introduced into a thin PDMS film. The measurements of permeability and selectivity of zeolite-filled PDMS membranes were carried out with a CO$_2$gas and a CO$_2$gas/acetic acid vapor mixture, respectively. The CO$_2$permeability of zeolite-filled membranes decreased with increasing zeolite content and then recovered up to 30 wt% content. The effect of zeolite type on the improvement of CO$_2$permeability was found to be in the order of zeolite 13X > natural zeolite > 4A. The CO$_2$selectivity of zeolite-filled membranes was enhanced up to 9 times compared with the selectivity of a pure (unfilled) PDMS membrane. The effect of zeolite type on the improvement of CO$_2$selectivity was found to be in the order of natural zeolite > zeolite 13X > zeolite 4A.

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08a
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• pp.659-662
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• 2007

The characteristics of a $SiN_x$ passivation layer grown by a specially designed catalyzer enhanced chemical vapor deposition (CECVD) system and electrical and optical properties of OLEDs passivated with the $SiN_x$ layer are described. Despite the low substrate temperature, the single $SiN_x$ passivation layer, grown on the PC substrate, exhibited a low water vapor transmission rate of $2{\sim}6{\times}10^{-2}\;g/m^2/day$ and a high transmittance of 87 %. In addition, current-voltage-luminescence results of an OLED passivated with a 150 nm-thick $SiN_x$ film compared to nonpassivated sample were identical indicating that the performance of an OLED is not critically affected by radiation from tungsten catalyzer during the $SiN_x$ deposition.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.374-374
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• 2012

Nowadays, Active Matrix Organic Light-Emitting Diodes (AM-OLEDs) are the superior display device due to their vivid full color, perfect video capability, light weight, low driving power, and potential flexibility. One of the advantages of AM-OLED over Liquid Crystal Display (LCD) lies in its flexibility. The potential flexibility of AM-OLED is not fully explored due to its sensitivity to moisture and oxygen which are readily present in atmosphere, and there are no flexible encapsulation layers available to protect these. Therefore, we come up with a new concept of Inorganic-Organic hybrid thin film as the encapsulation layer. Our Inorganic layer is Al2O3 and Organic layer is F-Alucone. We deposited these layers in vacuum state using Atomic Layer Deposition (ALD) and Molecular Layer Deposition (MLD) techniques. We found the results are comparable to commercial requirement of 10-6 g/m2 day for Water Vapor Transmission Rate (WVTR). Using ALD and MLD, we can control the exact thin film thickness and fabricate more dense films than chemical or physical vapor deposition methods. Moreover, this hybrid encapsulation layer potentially has both the flexibility of organic layers and superior protection properties of inorganic layer.

• Applied Chemistry for Engineering
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• v.29 no.4
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• pp.484-487
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• 2018

In this paper, the optical and electrical properties of ytterbium films were studied for water vapor transmission rate (WVTR) analysis of encapsulation films used in organic electronic devices. Ytterbium thin films show a wide range of light transmittance (70-10%) and resistivity ($6.0-0.16m{\Omega}{\cdot}cm$) depending on various film thicknesses (20-100 nm). The Yb thin films were oxidized with moisture and its transmittance and resistance changed in real time. As a result, the WVTR of parylene and aluminum nitride (AlN) laminated thin encapsulation film was measured to be $4.3{\times}10^{-3}g/m^2{\cdot}day$ with the 25 nm thick ytterbium thin film.

• Journal of the Korean Vacuum Society
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• v.5 no.1
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• pp.62-66
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• 1996

$(Ba_{1-x}Sr_xTiO_3$ (BST) thin films have been grown on Pt-coated MgO by metal -organic chemical vapor deposition. X-ray diffraction results showed that BST films were grown on a Pt/MgO substrate with (100) preferred orientation perpendicular to the surface. The lineawr relationship of P-E curve obtained form hysteresis loop measurement indicated that the BST films had a Curie transitions below room temperature . Films deposited at $900^{\circ}C$ exhibited a smooth and dense microstructure, a dielectric constant of 202, and a dissipation facotr of 0.02 at 100kHz. The leakage current density of the BST films is about $2\times10^{-10} \;A/\textrm{cm}^2$$ at an applied electric field of 0.2 MV/cm. The electrical behavior on the current-voltage characteristics is well explained by the bulk-limited Pool-Frenkel emission.

• Journal of Korean Society for Atmospheric Environment
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• v.17 no.E2
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• pp.35-42
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• 2001

Recent development of photocatalytic degradation method that is mediated by TiO$_2$ is of interest in the treatment of volatile organic compounds(VOCs). In this study, trichloroethylene(TCE) and acetone were closely examined in a batch scale of photo-reactor as a function of water vapor, oxygen, and temperature. Water vapor inhibited the photocatalytic degradation of acetone, while there was an optimum concentration in TCE. A lower efficiency was found in nitrogen atmosphere than air, and the effect of oxygen on photocatalytic degradation of acetone was greater than on that of TCE. The optimum reaction temperature on photocatalytic degradation was about 45$^{\circ}C$ for both compounds. NO organic byproducts were detected for both compounds under the present experimental conditions. It was ascertained that the photocatalytic reaction in a batch scale of photo-reactor was very effective in removing VOCs such as TCE and acetone in the gaseous phase.

• Journal of the Optical Society of Korea
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• v.16 no.3
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• pp.313-317
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• 2012

We have evaluated a 1.3 ${\mu}m$ vertical-cavity surface-emitting laser (VCSEL), whose bottom mirror and central active layer were grown by metal organic chemical vapor deposition (MOCVD) and whose top mirror was covered with a dielectric coating, for 10 Gb/s data transmission over single-mode fibers (SMFs). Successful demonstration of error-free transmission of the directly modulated VCSEL signals at data rate of 10 Gb/s over a 10 km-long SMF was achieved for operating temperatures from $20^{\circ}C$ to $60^{\circ}C$ up to bit-error-rate (BER) of $10^{-12}$. The DC bias current and modulation currents are only 7 mA and 6 mA, respectively. The results indicate that the VCSEL is a good low-power consuming optical signal source for 10 GBASE Ethernet applications under controlled environments.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.19 no.6
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• pp.538-546
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• 2006

We report on characteristics of specially designed inductively-coupled-plasma chemical vapor deposition (ICP-CVD) system for top-emitting organic light emitting diodes (TOLEDs). Using high-density plasma on the order of $10^{11}$ electrons/$cm^3$ generated by linear-type antennas connected in parallel and specially designed substrate cooling system, a 100 nm-thick transparent $SiN_{x}$ passivation layer was deposited on thin Mg-Ag cathode layer at substrate temperature below $50\;^{\circ}C$ without a noticeable plasma damage. In addition, substrate-mask chucking system equipped with a mechanical mask aligner enabled us to pattern the $SiN_x$ passivation layer without conventional lithography processes. Even at low substrate temperature, a $SiN_x$ passivation layer prepared by ICP-CVD shows a good moisture resistance and transparency of $5{\times}10^{-3}g/m^2/day$ and 92 %, respectively. This indicates that the ICP-CVD system is a promising methode to substitute conventional plasma enhanced CVD (PECVD) in thin film passivation process.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.71-72
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• 2006

We report on plasma damage free chemical vapor deposition technique for the thin film passivation of organic light emitting diodes (OLEDs), organic thin film transistor (OTFT) and flexible displays using catalyzer enhanced chemical vapor deposition (CECVD). Specially designed CECVD system has a ladder-shaped tungsten catalyzer and movable electrostatic chuck for low temperature deposition process. The top emitting OLED with thin film $SiN_x$ passivation layer shows electrical and optical characteristics comparable to those of the OLED with glass encapsulation. This indicates that the CECVD technique is a promising candidate to grow high-quality thin film passivation layer on OLED, OTFT, and flexible displays.