• 제목/요약/키워드: Organic Semiconductor

검색결과 569건 처리시간 0.029초

유기 발광 다이오드 소자의 성능·수명 평가를 위한 순환 계측 시스템 (Cyclic Measurement System for Evaluating Organic Light Emitting Diode Devices)

  • 박일후;나인엽;주현필;김규태
    • 반도체디스플레이기술학회지
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    • 제17권1호
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    • pp.50-53
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    • 2018
  • Cyclic measurement system using relay circuit for organic light emitting diode (OLED) was demonstrated. The OLED characterization such as current-voltage, impedance, and capacitance-voltage is performed in sequence, repetitively and automatically under full control of the personnel computer (PC) without changing the connection of cables. Owing to in situ degradation by cyclic measurement, the time dependence of the data can give good information on the reliability factor of the OLED devices. Therefore, both performance and reliability of the OLEDs can be evaluated, with no manual operation during the entire process.

스핀 스프레이법으로 PC 기판에 제작한 산화아연 박막의 특성 (Property of Spin-sprayed ZnO Film on PC Substrate)

  • 홍정수;;;박용서;김경환
    • 반도체디스플레이기술학회지
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    • 제17권3호
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    • pp.27-30
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    • 2018
  • In this study, ZnO film was deposited on polycarbonate substrate by spin-spray method at low substrate temperature of $85^{\circ}C$. Surface morphology of ZnO films was changed by adding citrate from rod to dense structure. As-deposited ZnO film indicated high transmittance above 80%. In case of the resistivity, as-deposited ZnO film had high resistivity due to the existence of organic substance in the film. However, organic substance was removed and resistivity was decreased to $3.9{\times}10^{-2}{\Omega}{\cdot}cm$, after UV irradiation.

Effects of Fused Thiophene Bridges in Organic Semiconductors for Solution-Processed Small-Molecule Organic Solar Cells

  • Lee, Jae Kwan;Lee, Sol;Yun, Suk Jin
    • Bulletin of the Korean Chemical Society
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    • 제34권7호
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    • pp.2148-2154
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    • 2013
  • Three push-pull organic semiconductors, TPA-$Th_3$-MMN (1), TPA-ThTT-MMN (2), and TPA-ThDTT-MMN (3), comprising a triphenylamine donor and a methylene malononitrile acceptor linked by various ${\pi}$-conjugated thiophene units were synthesized, and the effects of the ${\pi}$-conjugated bridging unit on the photovoltaic characteristics of solution-processed small-molecule organic solar cells based on these semiconductors were investigated. Planar bridging units with extended ${\pi}$-conjugation effectively facilitated intermolecular ${\pi}-{\pi}$ packing interactions in the solid state, resulting in enhanced $J_{sc}$ values of the SMOSCs fabricated with bulk heterojunction films.

OLED display manufacturing by Organic Vapor Phase Deposition

  • Marheineke, B.
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2006년도 6th International Meeting on Information Display
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    • pp.1676-1681
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    • 2006
  • We report on Organic Vapor Phase Deposition $(OVPD^{(R)})$ an innovative deposition technology for organic light emitting device (OLED) and organic semiconductor manufacturing. The combination of $OVPD^{(R)}$ with Close Coupled Showerhead (CCS) technology results in manufacturing equipment with vast potential for cost effective manufacturing of OLED displays commercially competitive to LCD. The actual $OVPD^{(R)}$ equipment concept and design is discussed: Computational Fluid Dynamic (CFD) modeling is compared with experimental results proving the excellent controllability of the deposition process. Further other production relevant deposition properties are being reviewed e.g. high deposition rates and high organic material utilization efficiency of the $OVPD^{(R)}$ - Technology. Data from devices made by $OVPD^{(R)}$ show comparable/ superior performance to those fabricated with conventional vacuum thermal evaporation (VTE) techniques. An outlook on further potentials of $OVPD^{(R)}$ with respect to enabling advanced organic device structures is given.

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Organic complementary inverter and ring oscillator on a flexible substrate

  • Kim, Min-Gyu;Cho, Hyun-Duck;Kwak, Jeong-Hun;Kang, Chan-Mo;Park, Myeong-Jin;Lee, Chang-Hee
    • Journal of Information Display
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    • 제12권1호
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    • pp.1-4
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    • 2011
  • A complementary inverter was fabricated using pentacene and N-N -dioctyl-3,4,9,10-perylene tetracarboxylic diimide-C (PTCDI-C8) for p- and n-type transistors on a poly(ether sulfone) substrate, respectively. The mobilities of the p- and n-type transistors were 0.056 and 0.013 $cm^2$/Vs, respectively. The inverter, which was composed of p- and n-type transistors, showed a gain of 48.6 when $V_{DD}$ = -40V and at the maximum noise margin of $V_{DD}$/2. A ring oscillator was also fabricated by cascading five inverters. The five-stage ring oscillator showed the maximum output frequency of 10 kHz when $V_{DD}$ = -170 V.

OLED의 광 효율 향상 기술: 랜덤 나노 외부 광 추출 복합 층 제작 (Light Efficiency Enhancement Technology of OLED: Fabrication of Random Nano External Light Extraction Composite Layer)

  • 최근수;장은비;서가은;박영욱
    • 반도체디스플레이기술학회지
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    • 제21권3호
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    • pp.39-44
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    • 2022
  • The light extraction technology for improving the light efficiency of OLEDs is the core technology for extracting the light inside the OLEDs to the outside. This study demonstrates a simple method to generate random nanostructures (RNSs) containing high refractive index nanoparticles to improve light extraction and viewing angle characteristics. A simple dry low-temperature process makes the nanostructured scattering layer on the polymer resin widely used in the industry. The scattering layer has the shape of randomly distributed nanorods. To control optical properties, we focused on changing the shape and density of RNSs and adjusting the concentration of high refractive index nanoparticles. As a result, the film of the present invention exhibits a perpendicular transmittance of 85% at a wavelength of 550 nm. This film was used as a scattering layer to reduce substrate mode loss and improve EL efficiency in OLEDs.

잉크젯 방식으로 PVP 뱅크와 TIPS-펜타센 반도체 층을 제작한 유기 박막트랜지스터 (Organic TFTs using PVP Bank and TIPS-Pentacene Semiconductor Layer patterned by Ink Jet Printing)

  • 김세민;박종승;송정근
    • 한국전기전자재료학회논문지
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    • 제22권11호
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    • pp.992-998
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    • 2009
  • We investigated the influence of organic solvents on the droplet properties of 6,13-bis (triisopropylsilylethynyl) pentacene (TIPS-pentacene), which was used for semiconductor of organic thin film transistors (OTFTs) and deposited by ink jet printing. From the result of the investigation, the conditions of a suitable solvent is that boiling point should be above $200^{\circ}C$ to reduce coffee stain and the surface tension above 32 dyn/cm to decrease the droplet size. Consequently, we selected tetralin which have a high boiling point ($207^{\circ}C$) and high surface tension (34.3 dyn/cm) as the solvent for TIPS-pentacene, and applied it to OTFTs. In fabrication process the conventional bank process employing photolithography and etching process was replaced by ink jet printed bank process, resulting in simplifying the process. Especially, polyvinylphenol was used for the bank, and the high hydrophobicity could improve the confinement of TIPS molecules inside the bank, enhancing the performance over the conventional hydrophilic polyvinylalcohol bank. The mobility was $0.18\;cm^2/Vs$, current on/off ratio $2.09{\times}10^5$, subthreshold slope 0.42 V/dec, and off state current $0.049\;pA/{\mu}m$.

Organic Thin-Film Transistors based on Alkoxynaphthalene End-capped Divinylbenzene

  • Kim, Yun-Hi;Lee, Dong-Hee;Park, Sung-Jin;Chen, June;Yi, Mi-Hye;Kwon, Soon-Ki
    • Journal of Information Display
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    • 제10권3호
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    • pp.125-130
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    • 2009
  • The new organic semiconductor, which is composed of a divinylbenzene core unit and alkoxynaphthalene on both sides, 1,4-bis-2-(6-hexyloxy)naphthalen-2-yl-vinylbenzene, was synthesized via Wittig reaction. The obtained oligomer was characterized via FT-IR, mass and elemental analysis, UV-visible spectroscopy, cyclovoltammetry, differential scanning calorimetry (DSC), and thermogravimetric analysis (TGA). The vacuum-evaporated film was characterized via X-ray diffraction and atomicforce microscopy (AFM). It formed a highly ordered polycrystalline vacuum-evaporated film and exhibited a good field-effect performance, with a hole mobility of $0.015cm^2/V{\cdot}s$, an on/off ratio of $1.18{\times}10^5$, and a subthreshold slope of 0.69 V when it was deposited at Ts=$90^{\circ}C$ on HMDS-treated $SiO_2$.