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Organic Thin-Film Transistors based on Alkoxynaphthalene End-capped Divinylbenzene  

Kim, Yun-Hi (Department of Chemistry and RINS, Gyeongsang National University)
Lee, Dong-Hee (School of Materials Science & Engineering and ERI, Gyeongsang National University)
Park, Sung-Jin (School of Materials Science & Engineering and ERI, Gyeongsang National University)
Chen, June (School of Materials Science & Engineering and ERI, Gyeongsang National University)
Yi, Mi-Hye (Korea Research Institute of Chemical Technology)
Kwon, Soon-Ki (School of Materials Science & Engineering and ERI, Gyeongsang National University)
Publication Information
Journal of Information Display / v.10, no.3, 2009 , pp. 125-130 More about this Journal
Abstract
The new organic semiconductor, which is composed of a divinylbenzene core unit and alkoxynaphthalene on both sides, 1,4-bis-2-(6-hexyloxy)naphthalen-2-yl-vinylbenzene, was synthesized via Wittig reaction. The obtained oligomer was characterized via FT-IR, mass and elemental analysis, UV-visible spectroscopy, cyclovoltammetry, differential scanning calorimetry (DSC), and thermogravimetric analysis (TGA). The vacuum-evaporated film was characterized via X-ray diffraction and atomicforce microscopy (AFM). It formed a highly ordered polycrystalline vacuum-evaporated film and exhibited a good field-effect performance, with a hole mobility of $0.015cm^2/V{\cdot}s$, an on/off ratio of $1.18{\times}10^5$, and a subthreshold slope of 0.69 V when it was deposited at Ts=$90^{\circ}C$ on HMDS-treated $SiO_2$.
Keywords
Semiconductor; alkoxynaphthalene end group; organic thin-film transistor;
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