• Proceedings of the KIEE Conference
• /
• 2001.07c
• /
• pp.1515-1517
• /
• 2001

In this work the electrical characteristics of organic TFTs with the semiconductor-insulator interfaces have been interested. Pentacene is used as an active semiconducting layer. The semiconductor layer of pentacene was thermally evaporated in vacuum at a pressure of about $2{\times}10^{-6}$ Torr and at a deposition rate of 0.3$\AA$/sec. Aluminium and gold were used for gate and source/drain electrodes. before pentacene is deposited on the insulator, the gate dielectric surfaces of two samples were rubbed with lateral and perpendicular to direction of the channel length respectively.

• Journal of the Semiconductor & Display Technology
• /
• v.8 no.4
• /
• pp.37-42
• /
• 2009

The performance of an OLED(organic luminescent emitting device) fabrication system strongly depends on the design of the evaporation cell-source. Trends in display sizes have hauled the enlargement of mother glass substrates. The enlargement of substrates requires the improvement and the enlargement of the effusion cell-source for OLED evaporation process. The deposited layers should be as uniform as possible, and therefore it is important to know the effusion profile of the molecules emitted from the cell-source. Conventional 2D DSMC algorithm cannot be used for simulating the new concept cell-source design, such as a linear source. This work concerns the development of 3D DSMC (direct simulation Monte Carlo) analysis for simulating the behavior of the evaporation cell-sources. In this paper, the 3D DSMC algorithm was developed and the film thickness profiles were obtained by the numerical analysis.

• Proceedings of the Optical Society of Korea Conference
• /
• 2005.07a
• /
• pp.204-205
• /
• 2005

Studies on display has been requested some major changes due to the high growth of the handheld terminal market. Therefore, the self emitting OLED(Organic Light Emitting Diode) has been interested as a next generation flat plane display because of its preeminent characteristics such as quick response characteristics, higher performance viewing angle, low power consumption, and panel floating. However, a trend of the display market is moving to three dimensional image processing instead of two dimensional flat display and various researches on display using hologram makes up for the difficulty in three dimensional display using typical flat display. In this study the Lenticular Screen Printing method is presented so that it can be applicable to organic semiconductor display devices and makes possible three dimensional display using flat display for complement the drawback of inorganic semiconductor.

• Journal of the Semiconductor & Display Technology
• /
• v.4 no.3 s.12
• /
• pp.5-9
• /
• 2005

The bonding structure of organic materials such as fluorinated amorphous carbon films was classified into two types due to the chemical shifts. The electrical properties of fluorinated amorphous carbon films also showed very different effect of two types notwithstanding a very little difference. Fluorinated amorphous carbon films with the cross-link break-age structure existed large leakage current resulting from effect of the electron tunneling. Increasing the cation due to the electron-deficient group increased the barrier height of the films with the cross-link amorphous structure, therefore the electric characteristic of the final materials with low dielectric constant was also improved. The lowest dielectric constant is 2.3 at the sample with the cross-link amorphous structure.

• Journal of the Semiconductor & Display Technology
• /
• v.11 no.1
• /
• pp.49-54
• /
• 2012

There have been plenty of difficulties because properties of Alq3 are unable to acquire in a process of manufacture of OLED. In this paper it will predict a viscosity of Alq3 through DSMC technique and suggest the way regarding a study to estimate properties of material through the computer simulation. There could generate errors of a simulation process in a vacuum deposition process since the properties of material that is used in a high-degree vacuum environment are not secured. Therefore, we would like to propose the new methods that can not only predict properties of a molecular unit but also raise an accuracy of simulation process by forecasting properties of Alq3.

• Proceedings of the Korean Society Of Semiconductor Equipment Technology
• /
• 2005.05a
• /
• pp.67-72
• /
• 2005

The bonding structure of organic materials such as fluorinated amorphous carbon films was classified into two types due to the chemical shifts. The electrical properties of fluorinated amorphous carbon films also showed very different effect of two types notwithstanding a very little difference. Fluorinated amorphous carbon films with the cross-link breakage structure existed large leakage current resulting from effect of the electron tunneling. Increasing the cation due to the electron-deficient group increased the barrier height of the films with the cross-link amorphous structure, therefore the electric characteristic of the final materials with low dielectric constant was also improved. The lowest dielectric constant is 2.3 at the sample with the cross-link amorphous structure.

• Journal of Integrative Natural Science
• /
• v.3 no.1
• /
• pp.7-18
• /
• 2010

Ethylene-bridged silsesquioxane resins were synthesized from two monomers: 1,2-bis(trimethoxysilyl)ethane and methyltrimethoxysilane. The silsesquioxane thin films were spin-coated from the copolymerized resins on silicon wafer. Metal insulator metal (MIM), metal insulator semiconductor (MIS) devices were utilized to investigate the electrical properties of the copolymerized thin films. As the films were inserted as gate insulator in the OTFT devices, the field effect mobilitites were evaluated by employing Poly(3-hexylthiophene) (P3HT) as organic semiconductor, which shows that their dielectric properties and mobility values are dependent on the molecular structures and Si-OH concentration involving in the films.

• 한국정보디스플레이학회:학술대회논문집
• /
• 2009.10a
• /
• pp.415-417
• /
• 2009

Color stable and efficient two wavelength white organic light emitting diodes (OLEDs) were fabricated using a iridium(III)[bis(4,6-difluorophenyl)-pyridinato-N,$C^2$'] picolinate (FIrpic) as a blue phosphorescent emitter and a bis(1-phenylisoquinolinato-$C^2$,N)iridium (acetylacetonate) ((piq)$_2$Ir(acac)) as a red phosphorescent emitter. The emitting layers consist of two blue emitting layers and one red emitting layer which is between the two blue layers. The device reaches the peak efficiencies of 7.84 % and 10.3 cd/A at 0.6 mA/$cm^2$. Furthermore, there was little change of EL spectra according to current density change in the device.

• Proceedings of the Korean Society Of Semiconductor Equipment Technology
• /
• 2003.12a
• /
• pp.45-49
• /
• 2003

본 논문에서는 gate 산화막을 위한 Hf oxide 박막을 $Hf(dmae)_4$ (dmae=dimethylaminoethoxide) 전구체로 Direct Liquid Injection Metal Organic Chemical Vapor Deposition (DLI-MOCVD)방법을 이용하여 p-type Si(100) 기판 위에 증착하였다. 이 전구체를 이용하여 $150^{\circ}C$의 낮은 증착 온도에서도 낮은 carbon 농도와 roughness를 가지는 양질의 박막을 증착할 수 있었다. 증착된 박막은 비정질 구조를 나타내었지만 annealing 온도를 증가시킴에 따라서 결정성(monoclinic phase)을 나타내었다. $500{\AA}$으로 증착한 박막을 C-V 와 I-V curve를 통하여 전기적 특성을 평가하였다. 열처리 온도가 증가함에 따라 유효유전상수(k)는 증가하지만 열처리 온도가 $900^{\circ}C$ 이상이 되면 계면층의 형성에 의해 유효유전상수는 감소하게 되고 이에 따라 누설 전류도 감소하게 된다. 산소분위기 $800^{\circ}C$에서 annealing한 $HfO_2$ 박막의 유전상수는 20.1이고, 누설 전류 밀도는 SV에서 $2.2\times10^{-6}A/\textrm{cm}^2$ 로 좋은 전기적 특성을 가진다.

• Proceedings of the Korean Society Of Semiconductor Equipment Technology
• /
• 2005.09a
• /
• pp.106-109
• /
• 2005

The ITO thin films for Top-Emitting Organic Light Emitting Devices (TOLEDs) were prepared on cell(LiF/Organic Layer/Bottom Electrode : ITO ) by FTS (Facing Targets Sputtering) system under different sputtering conditions which were varying gas pressure, input current and distance of target to target($D_{T-T}$). As a function of sputtering conditions, I-V characteristics of prepared ITO thin films on cell were measured by 4156A (HP). In the results, when the In thin films were deposited at $D_{T-T}$ 70mm and working pressure 1mTorr, the leakage current of ITO/cell was about 11[V] and 5E-6[$mA/cm^2$].