• 대한금속재료학회지
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• 제49권9호
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• pp.732-738
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• 2011

Silicon oxide thin films were deposited by using a plasma-enhanced chemical-vapor deposition technique to investigate the light emission properties. The photoluminescence characteristics were divided into two categories along the relative ratio of the flow rates of $SiH_4$ and $N_2O$ source gases, which show light emission in the broad/visible range and a light emission peak at 380 nm. We attribute the broad/visible light emission and the light emission peak to the quantum confinement effect of nanocrystalline silicon and the Si=O defects, respectively. Changes in the photoluminescence spectra were observed after the post-annealing processes. The photoluminescence spectra of the broad light emission in the visible range shifted to the long wavelength and were saturated above an annealing temperature of $900^{\circ}C$ or after 1 hour annealing at $970^{\circ}C$. However, the position of the light emission peak at 380 nm did not change at all after the post-annealing processes. The light emission intensities at 380 nm initially increased, and decreased at annealing temperatures above $700^{\circ}C$ or after 1 hour annealing at $700^{\circ}C$. The photoluminescence behaviors after the annealing processes can be explained bythe size change of the nanocrystalline silicon and the density change of Si=O defect in the films, respectively. These results support the possibility of using a silicon-based light source for Si-optoelectronic integrated circuits and/or display devices.

• 반도체디스플레이기술학회지
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• 제20권1호
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• pp.70-76
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• 2021

A cylindrical microlens (CML) has been widely used as an optical element for organic light-emitting diodes (OLEDs), light diffusers, image sensors, 3D imaging, etc. To fabricate high-performance optoelectronic devices, the CML with high aspect ratio is demanded. In this work, we report on facile solution-based processes (i.e., slot-die and needle coatings) to fabricate the CML using poly(methyl methacrylate) (PMMA). It is found that compared with needle coating, slot-die coating provides the CML with lower aspect ratio due to the wide spread of solution along the hydrophilic head lip. Although needle coating provides the CML with high aspect ratio, it requires a high precision needle array module. To demonstrate that the aspect ratio of CML can be enhanced using slot-die coating, we have varied the molecular weight of PMMA. We can achieve the CML with higher aspect ratio using PMMA with lower molecular weight at a fixed viscosity because of the higher concentration of PMMA solute in the solution. We have also shown that the aspect ratio of CML can be further boosted by coating it repeatedly. With this scheme, we have fabricated the CML with the width of 252 ㎛ and the thickness of 5.95 ㎛ (aspect ratio=0.024). To visualize its light diffusion property, we have irradiated a laser beam to the CML and observed that the laser beam spreads widely in the vertical direction of the CML.

• 한국전기전자재료학회논문지
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• 제35권1호
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• pp.80-85
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• 2022

ZnO-based transparent conductive films have been widely studied to achieve high performance optoelectronic devices such as next generation flexible and transparent display systems. In order to achieve a transparent flexible ZnO-based device, a low temperature growth technique using a flexible polymer substrate is required. In this work, high quality flexible ZnO films were grown on colorless polyimide substrate using atomic layer deposition (ALD). Transparent ZnO films grown from 80 to 200℃ were fabricated with a metal-semiconductor-metal structure photodetectors (PDs). As the growth temperature of ZnO film increases, the photocurrent of UV PDs increases, while the sensitivity of that decreases. In addition, it is found that the response times of the PDs become shorter as the growth temperature increases. Based on these results, we suggest that high-quality ZnO film can be grown below 200℃ in an atomic layer deposition system, and can be applied to transparent and flexible UV PDs with very fast response time and high photocurrent.

• 센서학회지
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• 제31권4호
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• pp.249-254
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• 2022

To achieve high-performance colloidal quantum dot light-emitting diodes (QD-LEDs), the use of a densely packed QD film is crucial to prevent the formation of leakage current pathways and increase in interface resistance. Spin coating is the most common method to deposit QDs; however, this method often produces pinholes that can act as short-circuit paths within devices. Since state-of-the-art QD-LEDs typically employ mono- or bi-layer QDs as an emissive layer because of their low conductivities, the use of a densely packed and pinhole-free QD film is essential. Herein, we introduce the Langmuir-Blodgett (LB) technique as a deposition method for the fabricate densely packed QD films in QD-LEDs. The LB technique successfully transfers a highly dense monolayer of QDs onto the substrate, and multilayer deposition is performed by repeating the transfer process. To validate the comparability of the LB technique with the standard QD-LED fabrication process, we fabricate and compare the performance of LB-based QD-LEDs to that of the spin-coating-based device. Owing to the non-destructiveness of the LB technique, the electroluminescence efficiency of the LB-based QD-LEDs is similar to that of the standard spin coating-based device. Thus, the LB technique is promising for use in optoelectronic applications.

• 한국입자에어로졸학회지
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• 제19권2호
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• pp.21-30
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• 2023

Solar cells, converting abundant solar energy into electrical energy, are considered crucial for sustainable energy generation. Recent advancements focus on nanoparticle-enhanced solar cells to overcome limitations and improve efficiency. These cells offer two potential efficiency enhancements. Firstly, plasmonic effects through nanoparticles can improve optical performance by enhancing absorption. Secondly, nanoparticles can improve charge transport and reduce recombination losses, enhancing electrical performance. However, factors like nanoparticle size, placement, and solar cell structure influence the overall performance. This study evaluates the performance of silver nanoparticles incorporated in a p-i-n structure of perovskite solar cells, generated via aerosol state by the evaporation and condensation system. The silver nanoparticles deposited between the hole transport layer and transparent electrode form nanoparticle embedded transport layer (NETL). The evaluation of the optoelectronic properties of perovskite devices using NETL demonstrates their potential for improving efficiency. The findings highlight the possibility of nanoparticle incorporation in perovskite solar cells, providing insights for sustainable energy generation.

• 한국전자통신학회논문지
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• 제19권1호
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• pp.47-52
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• 2024

본 연구에서는 유리 기판 위에 BZO박막을 제작한 후, 열처리 온도가 박막의 전기적 및 광학적 특성에 미치는 영향을 조사하였다. XRD 분석 결과, 열처리 온도에 무관하게 모든 박막이 c-축 배향성을 나타내었다. 열처리 온도가 400에서 600℃ 로 증가함에 따라 반가폭(FWHM)은 1.65에서 1.07° 로 감소하였다. 가시광 영역(400-800nm)에서의 평균 투과도는 열처리 온도에 큰 영향 없이 85% 이상의 높은 값을 나타내었다. Hall 측정결과, 열처리 온도에 따라 캐리어 농도와 이동도는 증가하였고 비저항은 감소하였다. 600℃ 에서 열처리한 BZO박막의 비저항과 캐리어 농도는 각각 9.75 × 10^-2 Ω·cm 과 4.21×10¹⁹ cm^-3 로 가장 우수한 값을 나타내었다. 향후 BZO박막의 공정 조건과 열처리 조건을 최적화시킨다면, 차세대 광전자 소자에 응용될 수 있는 매우 유망한 재료로 주목받을 것으로 기대된다.

• 청정기술
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• 제30권1호
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• pp.13-22
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• 2024

본 연구에서는 6,13-Bis(triisopropylsilylethynyl)pentacene(TP):2-Decyl-7-phenyl[1]benzothieno[3,2-b][1]benzothiophene(BT):Poly styrene (PS) 블랜딩 thin film transistor (TFT)를 제작 광 흡수 센서로의 활용에 대해 탐구한다. BT의 혼합으로 인해 off current 감소와 on/off ratio 향상을 동시에 달성하였다. 특히, TP:BT:PS (1:0.25:1 w/w) 샘플은 우수한 광 흡수 특성을 보여주었고, 이를 통해 높은 성능의 광 흡수 장치 제작이 가능함을 입증했다. 다양한 혼합 비율의 결정 구조와 전기적 특성에 대한 분석을 통해 TP:BT:PS (1:0.25:1 w/w) 샘플이 최적임을 확인하였다. 이 결과는 광 흡수 장치의 발전 뿐만 아니라 혼합 organic semiconductor (OSC)의 광전자 시스템 개발에 긍정적인 기대효과를 미칠 수 있을 것이며, 이를 통해 단일 OSC 사용의 제약을 극복하고, 미세 조정된 광학 응답을 갖춘 고성능 OSC TFT를 제작하여 의료 전자소자, 산업용 전자소자 등에 응용할 수 있을 것으로 기대된다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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• pp.189-189
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• 2012

Lead sulfide (PbS) nanocrystal quantum dots (NQDs) are promising materials for various optoelectronic devices, especially solar cells, because of their tunability of the optical band-gap controlled by adjusting the diameter of NQDs. PbS is a IV-VI semiconductor enabling infrared-absorption and it can be synthesized using solution process methods. A wide choice of the diameter of PbS NQDs is also a benefit to achieve the quantum confinement regime due to its large Bohr exciton radius (20 nm). To exploit these desirable properties, many research groups have intensively studied to apply for the photovoltaic devices. There are several essential requirements to fabricate the efficient NQDs-based solar cell. First of all, highly confined PbS QDs should be synthesized resulting in a narrow peak with a small full width-half maximum value at the first exciton transition observed in UV-Vis absorbance and photoluminescence spectra. In other words, the size-uniformity of NQDs ought to secure under 5%. Second, PbS NQDs should be assembled carefully in order to enhance the electronic coupling between adjacent NQDs by controlling the inter-QDs distance. Finally, appropriate structure for the photovoltaic device is the key issue to extract the photo-generated carriers from light-absorbing layer in solar cell. In this step, workfunction and Fermi energy difference could be precisely considered for Schottky and hetero junction device, respectively. In this presentation, we introduce the strategy to obtain high performance solar cell fabricated using PbS NQDs below the size of the Bohr radius. The PbS NQDs with various diameters were synthesized using methods established by Hines with a few modifications. PbS NQDs solids were assembled using layer-by-layer spin-coating method. Subsequent ligand-exchange was carried out using 1,2-ethanedithiol (EDT) to reduce inter-NQDs distance. Finally, Schottky junction solar cells were fabricated on ITO-coated glass and 150 nm-thick Al was deposited on the top of PbS NQDs solids as a top electrode using thermal evaporation technique. To evaluate the solar cell performance, current-voltage (I-V) measurement were performed under AM 1.5G solar spectrum at 1 sun intensity. As a result, we could achieve the power conversion efficiency of 3.33% at Schottky junction solar cell. This result indicates that high performance solar cell is successfully fabricated by optimizing the all steps as mentioned above in this work.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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• pp.50-50
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• 2008

ZnO has been extensively studied for optoelectronic applications such as blue and ultraviolet (UV) light emitters and detectors, because it has a wide band gap (3.37 eV) anda large exciton binding energy of ~60 meV over GaN (~26 meV). However, the fabrication of the light emitting devices using ZnO homojunctions is suffered from the lack of reproducibility of the p-type ZnO with high hall concentration and mobility. Thus, the ZnO-based p-n heterojunction light emitting diode (LED) using p-Si and p-GaN would be expected to exhibit stable device performance compared to the homojunction LED. The n-ZnO/p-GaN heterostructure is a good candidate for ZnO-based heterojunction LEDs because of their similar physical properties and the reproducibleavailability of p-type GaN. Especially, the reduced lattice mismatch (~1.8 %) and similar crystal structure result in the advantage of acquiring high performance LED devices with low defect density. However, the electroluminescence (EL) of the device using n-ZnO/p-GaN heterojunctions shows the blue and greenish emissions, which are attributed to the emission from the p-GaN and deep-level defects. In this work, the n-ZnO:Ga/p-GaN:Mg heterojunction light emitting diodes (LEDs) were fabricated at different growth temperatures and carrier concentrations in the n-type region. The effects of the growth temperature and carrier concentration on the electrical and emission properties were investigated. The I-V and the EL results showed that the device performance of the heterostructure LEDs, such as turn-on voltage and true ultraviolet emission, developed through the insertion of a thin intrinsic layer between n-ZnO:Ga and p-GaN:Mg. This observation was attributed to a lowering of the energy barriers for the supply of electrons and holes into intrinsic ZnO, and recombination in the intrinsic ZnO with the absence of deep level emission.

• 한국세라믹학회:학술대회논문집
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• 한국세라믹학회 2005년도 국제 전자세라믹 학술회의
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• pp.1-112
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• 2005

본 연구동향보고서는 2005년 6월 12일부터 16일까지 서울에서 개최된 2005년도 국제 전자세라믹 학술회의(International Conference on Electroceramics 2005: ICE-2005)에서 발표된 논문을 중심으로 국내외 전자세라믹 학계의 최신연구동향을 분석한 것이다. ICE-2005는 한국을 포함하여 전 세계 17개국에서 450여명에 달하는 전자세라믹 연구자들이 모여서 최신연구결과를 발표하고 토의하는 국제학술회의였기 때문에, 이곳에서 발표된 논문의 주제와 내용을 수집$\cdot$분석함으로써 국내는 물론 해외의 최신 전자세라믹 연구동향을 파악하고 새로이 각광받는 연구주제들을 손쉽게 파악할 수 있었다. ICE-2005에 제출된 연구 논문에 대한 분석과 더불어서, 전자세라믹 연구에 대한 이해를 돕기 위하여 본 연구동향 보고서의 집필자들에 의해 국내외 학계 전반에 걸친 자료 수집과 설명 또한 함께 이루어졌다. 연구동향에 대한 분석은 정보/전자세라믹(Informatics), 환경 에너지 세라믹(Energy & Environment), 전자세라믹의 제작 공정 및 특성분석(Processing & Characterization), 새로운 연구주제(Emerging Field) 둥 4개의 커다란 범주로 구분하여 이루어졌으며, 그 각각에 대해서 다시 몇 개의 세부적인 연구주제로 분류되어 논의 되었다. 정보전자세라믹 분야에서는 강유전체 및 고유전체, 산화물 및 질화물 반도체, 광전물질, 다층구조 전자세라믹, 고주파용 전자세라믹, 압전체 및 MEMS 등에 대한 동향분석이 이루어졌으며, 압전응용 및 강유전체에 대한 논문이 다수를 차지하는 것으로부터 정보전자 세라믹분야의 세계적인 연구개발 경향을 읽을 수 있었다. 환경 에너지 세라믹 분야에서는 재충전 배터리, 수소저장장치, 연료전지, 신개념 에너지 변환장치 등에 대한 연구논문이 주류를 이루었으며, 최근의 고유가에 의한 에너지 위기에 의하여 연료전지와 에너지 창출 시스템(energy harvesting system), 그리고 열전체를 이용한 발전이 새로이 주목받는 연구 분야임을 알 수 있었다. 전자세라믹의 제작공정 및 특성분석 분야에서는 분역과 스트레인 조절공정, 신개념 제작합성 공정, 나노전자세라믹, 단결정 성장기술, 전자세라믹의 이론 및 모형 연구 등의 분야에 대하여 동향분석을 행하였으며, 국내외 전자세라믹 분야의 연구개발은 최근의 나노 연구유행에 부응한 나노구조 전자세라믹과 이동통신 산업에 필수적인 LTCC 등의 다층구조 전자세라믹 연구에 집중되고 있다고 파악되었다. 그 외에도 나노결정질 전자세라믹, 스마트 센서용 전자세라믹, 생체세라믹 등이 최근 전자세라믹 학회의 주목을 받는 새로운 연구주제들로 떠오르고 있다. 최근 전세계 전자세라믹 학계의 연구동향을 분석한 본 보고서는, 국내 전자세라믹 연구자들에게 선진 연구진의 연구개발 경향에 대한 정보를 제공함은 물론, 과학기술 정책입안에도 주요한 참고자료로 활용될 수 있으리라 기대된다.