• 대한전기학회:학술대회논문집
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• 대한전기학회 1988년도 전기.전자공학 학술대회 논문집
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• pp.477-479
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• 1988

A new method of optical short pulse generation using stable diode lasers with negative optoelectronic feedback is demonstrated experimentally. About 1 nanosecond pulses with 300 MHz repetition rate are generated.

• Journal of Electrical Engineering and information Science
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• 제2권3호
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• pp.95-98
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• 1997

A nonlinear optical-microwave interaction is carried out in an uniplanar CPW-to-Slotline ring resonator on the semi-insulating GaAs substrate, in which a Schottky photodetector is monolithically integrated as a coupling gap. When the capacitive reactance of the detetor is modulated, the parametric amplification effect of the mixer occurs. In this device structure, the parametric amplification gain of 20 dB without the applied bias in RF signal is obtained. This microwave optoelectronic mixer can be used in the fiber-optic communication link.

• Applied Science and Convergence Technology
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• 제23권5호
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• pp.284-288
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• 2014

We present tapered nanostructures fabricated on a selective area of gallium phosphide substrates for advanced optoelectronic device applications. A lithography-free fabrication process was accomplished by dry etching of metal nanoparticles. Thermal dewetting of micro-patterned metal thin films provides etch masks for tapered nanostructures. This simple process also allows the formation of plasmonic surfaces with corrugated shapes. Rigorous coupled-wave analysis calculations provide design guidelines for tapered nanostructures on gallium phosphide substrates.

• 한국광학회:학술대회논문집
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• 한국광학회 1989년도 제4회 파동 및 레이저 학술발표회 4th Conference on Waves and lasers 논문집 - 한국광학회
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• pp.107-112
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• 1989

We observe experimentally self-pulsing, subharmonic generation, spectral bistability, and chaos in a stable laser diode with delayed optoelectronic feed-back. The laser diode emits 200 ps optical pulses with 1.1 GHz repetition rate in the self-pulsing region. The bistable region critically depends on the closed loop gain of the system. We also explain observed experimental result.

• ETRI Journal
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• 제5권4호
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• pp.52-59
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• 1983

• Current Photovoltaic Research
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• 제2권4호
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• pp.177-181
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• 2014

$Cu_2ZnSn(S_xSe_{1-x})_4$ (CZTSSe) absorber thin films were prepared on Mo coated soda lime glass substrates by sulfo-selenization of sputtered stacked Zn-Sn-Cu precursor thin films. The Zn-Sn-Cu precursor thin films were sulfo-selenized inside a graphite box containing S and Se powder using rapid thermal processing furnace at $540^{\circ}C$ in Ar atmosphere with pre-treatment at $300^{\circ}C$. The effect of different S/Se ratio on the structural, compositional, morphological and electrical properties of the CZTSSe thin films were studied using XRD (X-ray diffraction), XRF (X-ray fluorescence analysis), FE-SEM (field-emission scanning electron microscopy), respectively. The XRD, FE-SEM, XRF results indicated that the properties of sulfo-selenized CZTSSe thin films were strongly related to the S/Se composition ratio. In particular, the CZTS thin film solar cells with S/(S+Se)=0.25 shows best conversion efficiency of 4.6% ($V_{oc}$ : 348 mV, $J_{sc}$ : $26.71mA/cm^2$, FF : 50%, and active area : $0.31cm^2$). Further detailed analysis and discussion for effect of S/Se composition ratio on the properties CZTSSe thin films will be discussed.

• Corrosion Science and Technology
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• 제11권1호
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• pp.9-14
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• 2012

The formation of the Fe-Al inhibition layer in hot-dip galvanizing is a confusing issue for a long time. This study presents a characterization result on the inhibition layer formed on C-Mn-Cr and C-Mn-Si dual-phase steels after a short time galvanizing. The samples were annealed at $800^{\circ}C$ for 60 s in $N_{2}$-10% $H_{2}$ atmosphere with a dew point of $-30^{\circ}C$, and were then galvanized in a bath containing 0.2 %Al. X-ray photoelectron spectroscopy (XPS) and transmission electron microscopy (TEM) was employed for characterization. The TEM electron diffraction shows that only $Fe_{2}Al_{5}$ intermetallic phase was formed. No orientation relationship between the $Fe_{2}Al_{5}$ phase and the steel substrate could be identified. Two peaks of Al 2p photoelectrons, one from metallic aluminum and the other from $Al^{3+}$ ions, were detected in the inhibition layer, indicating that the layer is in fact a mixture of $Fe_{2}Al_{5}$ and $Al_{2}O_{3}$. TEM/EDS analysis verifies the existence of $Al_{2}O_{3}$ in the boundaries of $Fe_{2}Al_{5}$ grains. The nucleation of $Fe_{2}Al_{5}$ and the reduction of the surface oxide probably proceeded concurrently on galvanizing, and the residual oxides prohibited the heteroepitaxial growth of $Fe_{2}Al_{5}$.

• 폴리머
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• 제38권3호
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• pp.314-319
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• 2014

힌더드 아민기를 포함하고 있는 헤테로환을 가지며 알킬사슬 길이가 서로 다른 세 종류의 나일론 4 열안정제를 합성하였다. 힌더드 아민기를 이용하여 라디칼에 의한 열분해를 방지하고, 열안정제와 나일론 4의 아마이드기 간 수소결합을 조절하여 나일론 4의 열적 특성에 미치는 영향을 확인하였다. 안정제의 알킬사슬의 수가 4개일 때 수소결합이 가장 최적화되는 것으로 등온 TGA 결과를 통해서 확인하였다. 또한 시판중인 나일론 6의 열안정제를 사용하여 나일론 4에 대한 열안정성을 비교 실험한 결과, 합성 열안정제가 나일론 4의 열안정성을 실질적으로 향상시킨 것을 확인하였다.

• 한국재료학회지
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• 제9권6호
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• pp.599-603
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• 1999

AIN과 저온 GaN 완충충율 이용하여 Si 기판 위의 후막 GaN의 성장특성을 조샤하였다. Si과 GaN의 격자부정합도와 열팽창계수의 차이를 줄이기 위해 AIN과 저온 GaN를 완충충으로 사용하였다. AIN은 RF sputter를 이용하여 중착온도와 증착시간 및 RF power에 따른 표면 거칠기를 AFM으로 조사하여 최척조건을 확립하여 사용하였다. 또한 저온에서 GaN를 성장시켜 이를 완충충으로 이용하여 후막 GaN의 성장시 미치는 영향을 살펴보았다. 성장온도와 V/III 비율이 후막 성장시 표면특성과 결정성 및 성장속도에 미치는 영향을 조사하였다. 후막 GaN의 표연특성 및 막의 두께는 SEM과 $\alpha-step$을 이용하여 측정하였으며 결정성은 X-ray Diffractometer를 이용하여 조사하였다.

• Current Optics and Photonics
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• 제8권1호
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• pp.38-44
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• 2024

Under the influence of atmospheric turbulence, a star's point image will shake back and forth erratically, and after exposure the originally small star point will spread into a huge spot, which will affect the ground calibration of the star sensor. To analyze the impact of atmospheric turbulence on the positioning accuracy of the star's center of mass, this paper simulates the atmospheric turbulence phase screen using a method based on a sparse spectrum. It is added to the static-star-simulation device to study the transmission characteristics of atmospheric turbulence in star-point simulation, and to analyze the changes in star points under different atmospheric refractive-index structural constants. The simulation results show that the structure function of the atmospheric turbulence phase screen simulated by the sparse spectral method has an average error of 6.8% compared to the theoretical value, while the classical Fourier-transform method can have an error of up to 23% at low frequencies. By including a simulation in which the phase screen would cause errors in the center-of-mass position of the star point, 100 consecutive images are selected and the average drift variance is obtained for each turbulence scenario; The stronger the turbulence, the larger the drift variance. This study can provide a basis for subsequent improvement of the ground-calibration accuracy of a star sensitizer, and for analyzing and evaluating the effect of atmospheric turbulence on the beam.