• 한국진공학회:학술대회논문집
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• 한국진공학회 2015년도 제49회 하계 정기학술대회 초록집
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• pp.65-65
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• 2015

In this talk, I will introduce two topics. The first topic is the polymer light emitting diodes (PLEDs) using graphene oxide quantum dots as emissive center. More specifically, the energy transfer mechanism as well as the origin of white electroluminescence in the PLED were investigated. The second topic is the facile synthesis of eco-friendly III-V colloidal quantum dots and their application to light emitting diodes. Polymer (organic) light emitting diodes (PLEDs) using quantum dots (QDs) as emissive materials have received much attention as promising components for next-generation displays. Despite their outstanding properties, toxic and hazardous nature of QDs is a serious impediment to their use in future eco-friendly opto-electronic device applications. Owing to the desires to develop new types of nanomaterial without health and environmental effects but with strong opto-electrical properties similar to QDs, graphene quantum dots (GQDs) have attracted great interest as promising luminophores. However, the origin of electroluminescence (EL) from GQDs incorporated PLEDs is unclear. Herein, we synthesized graphene oxide quantum dots (GOQDs) using a modified hydrothermal deoxidization method and characterized the PLED performance using GOQDs blended poly(N-vinyl carbazole) (PVK) as emissive layer. Simple device structure was used to reveal the origin of EL by excluding the contribution of and contamination from other layers. The energy transfer and interaction between the PVK host and GOQDs guest were investigated using steady-state PL, time-correlated single photon counting (TCSPC) and density functional theory (DFT) calculations. Experiments revealed that white EL emission from the PLED originated from the hybridized GOQD-PVK complex emission with the contributions from the individual GOQDs and PVK emissions. (Sci Rep., 5, 11032, 2015). New III-V colloidal quantum dots (CQDs) were synthesized using the hot-injection method and the QD-light emitting diodes (QLEDs) using these CQDs as emissive layer were demonstrated for the first time. The band gaps of the III-V CQDs were varied by varying the metal fraction and by particle size control. The X-ray absorption fine structure (XAFS) results show that the crystal states of the III-V CQDs consist of multi-phase states; multi-peak photoluminescence (PL) resulted from these multi-phase states. Inverted structured QLED shows green EL emission and a maximum luminance of ~45 cd/m2. This result shows that III-V CQDs can be a good substitute for conventional cadmium-containing CQDs in various opto-electronic applications, e.g., eco-friendly displays. (Un-published results).

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 하계학술대회 논문집
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• pp.321-322
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• 2009

Al doped ZnO films deposited on glass substrate using RF magnetron sputtering in Ar and $Ar+H_2$ gas ambient at $100^{\circ}C$. The films deposited in $Ar+H_2$ were hydrogen-annealed at the temperature of $150\sim300^{\circ}C$ for 1hr. The lowest resistivity of $4.25\times10^{-4}{\Omega}cm$ was obtained for the AZO film deposited in $Ar+H_2$ after hydrogen annealing at $300^{\circ}C$ for 1hr. The average transmittance is above 85% in the range of 400-1000 nm for all films. The absorption efficiency of solar cell was improved by using the optimized AZO films as a top electrode.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 추계학술대회 논문집 Vol.19
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• pp.71-72
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• 2006

The stochiometric mixture of evaporating materials for the $ZnIn_2S_4$ single crystal thin film was prepared from horizontal furnace. To obtain the $ZnIn_2S_4$ single crystal thin film. $ZnIn_2S_4$ mixed crystal was deposited on throughly etched semi-insulating GaAs(100). In the Hot Wall Epitaxy(HWE) system. From the photocurrent spectrum by illumination of perpendicular light on the c-axis of the $ZnIn_2S_4$ single crystal thin film, we have found that the values of spin orbit splitting ${\Delta}So$ and the crystal field splitting ${\Delta}Cr$ were 0.0148 eV and 0.1678 eV at $10_{\circ}K$, respectively.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2010년도 하계학술대회 논문집
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• pp.168-168
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• 2010

DCM derivatives were newly synthesized. The OLEDs with a DCM-A as an emitting layer was fabricated and analyzed their opto-electrical properties. The structures of OLEDs were I) ITO/DCM-A/Al, II) ITO/-NPD/DCM-A/LiF/Al, and III) ITO/-NPD/DCM-A/Alq3/LiF/Al. The EL peak of the DCM-A shows the red emission in the range of 700 nm. The structure I) shows that 1050 nW/cm2 at 510 mA/cm2. The structure II) shows that takes the most excellent luminance about 39,000 nW/cm2 at 290 mA/cm2. The EL structure ill shows luminance about 13,000 nW/cm2 at 6 mA/cm2.

• 한국전기전자재료학회논문지
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• 제25권7호
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• pp.525-530
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• 2012

We present the results of a study of the polarizing photovoltaic (PV) effects in an aligned polymer bulk heterojuction PV layer. The fairly uniform in-plane uniaxial alignment of the PV layer with a macroscopic axial orientational order parameter of 0.40 was achieved by means of a simple rubbing technique. Moreover, reflective polarizing PSCs having the aligned PV layers were applied to power-generating reflective type liquid crystal displays (LCDs), which exhibited a maximum contrast ratio of 1.7. These results form a promising foundation for various energy harvesting polarization dependent opto-electrical LCD device applications.

• 한국정밀공학회지
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• 제2권3호
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• pp.20-27
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• 1985

Opto-electronics의 의학에의 응용: 전자공학과 광학의 결합산물인 광전자공학긔 의학응용은 진단,치료에 새로운 경지를 열어주게 되었다. 계측진단은 검체에 적용하는 것과 생체에 적용하는 것으로 분류되어진다. 검체에 적용하는 것은 주로 INVITRO 계측으로 생화학분석, 전기영동, 자동혈구계수등이다. 생체에 적용하는 INVIVO 계측은 관찰, 계측용의 내구경과 비관혈계측으로 분광분석, 산소포화도등의 광의 투과율계측, 적외.마이크로파 .thermography와 같은 방사계측, 발색량계측 등이 이에 속한다. 또한 광전자공학을 응용하여 병원애 전송네트워크구성, 광통신등도 최근의 활용과제중의 하나다. 특히 광전자공학의 응용중에서 가장 관심의 대상이 되는것은 치료에의 응용이다. 그러므로 여기서는 이들 응용중에서 가장 유용성이 있는 적외선 thermography와 Laser의 응용에 대해 간단히 기술하기로 한다.

• Transactions on Electrical and Electronic Materials
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• 제16권1호
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• pp.5-9
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• 2015

Optical and electrical properties were studied for Antimony doped tin oxide thin films from precursors containing 10, 30, 50, and 70 atom% of Sb deposited on bare sodalime silica, barrier layer coated sodalime silica, and pure silica glass substrates by sol-gel spinning technique. The direct band gaps were found to vary from 3.13~4.12 eV when measured in the hv range of 2.5~5.0 eV, and varied from 4.22~5.08 eV when measured in the range of 4.0~7.0 eV. Indirect band gap values were in the range of 2.35~3.11 eV. Blue shift of band gap with respect to bulk band gap and Moss-Burstein shift were observed. Physical thickness of the films decreased with the increase in % Sb. Resistivity of the films deposited on SLS substrate was in the order of $10^{-2}$ ohm cm. Sheet resistance of the films deposited on barrier layer coated soda lime silica glass substrate was found to be relatively less.

• Journal of Information Display
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• 제3권2호
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• pp.19-25
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• 2002

In this paper, a new target extraction algorithm is proposed, in which the coordinates of target are obtained adaptively by using the difference image information and the optical BPEJTC(binary phase extraction joint transform correlator) with which the target object can be segmented from the input image and background noises are removed in the stereo vision system. First, the proposed algorithm extracts the target object by removing the background noises through the difference image information of the sequential left images and then controlls the pan/tilt and convergence angle of the stereo camera by using the coordinates of the target position obtained from the optical BPEJTC between the extracted target image and the input image. From some experimental results, it is found that the proposed algorithm can extract the target object from the input image with background noises and then, effectively track the target object in real time. Finally, a possibility of implementation of the adaptive stereo object tracking system by using the proposed algorithm is also suggested.

• 한국전기전자재료학회논문지
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• 제27권10호
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• pp.642-647
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• 2014

For feasible study of opto-electrical application regarding to oxide semiconductor, we implemented the N doped ZnO growth using a atomic layer deposition technique. The p-type ZnO deposition, necessary for ZnO-based optoelectronics, has considered to be very difficulty due to sufficiently deep acceptor location and self-compensating process on doping. Various sources of N such as $N_2$, $NH_3$, NO, and $NO_2$ and deposition techniques have been used to fabricate p-type ZnO. Hall measurement showed that p-type ZnO was prepared in condition with low deposition temperature and dopant concentration. From the evaluation of photoluminescence spectroscopy, we could observe defect formation formed by N dopant. In this paper, we exhibited the electrical and optical properties of N-doped ZnO thin films grown by atomic layer deposition with $NH_3OH$ doping source.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.2
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• pp.1187-1190
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• 2004

In this paper we analyze the reflection characteristics of a dielectric microstrip line with an open-end termination containing optically induced plasma region, which are analyzed by the assumption that the plasma is distributed homogeneously in the laser illumination. The characteristics impedances resulting from the presence of plasma are evaluated the transmission line model. To estimate theoretically the characteristic response of same systems in the time domain, the Fourier transformation method is evaluated. The reflection characteristics of time response in microwave systems have been calculated.