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http://dx.doi.org/10.4313/TEEM.2015.16.1.5

Opto-Electrical Study of Sol-Gel Derived Antimony Doped Tin Oxide Films on Glass  

De, Arijit (Department of Chemistry, Krishnath College)
Publication Information
Transactions on Electrical and Electronic Materials / v.16, no.1, 2015 , pp. 5-9 More about this Journal
Abstract
Optical and electrical properties were studied for Antimony doped tin oxide thin films from precursors containing 10, 30, 50, and 70 atom% of Sb deposited on bare sodalime silica, barrier layer coated sodalime silica, and pure silica glass substrates by sol-gel spinning technique. The direct band gaps were found to vary from 3.13~4.12 eV when measured in the hv range of 2.5~5.0 eV, and varied from 4.22~5.08 eV when measured in the range of 4.0~7.0 eV. Indirect band gap values were in the range of 2.35~3.11 eV. Blue shift of band gap with respect to bulk band gap and Moss-Burstein shift were observed. Physical thickness of the films decreased with the increase in % Sb. Resistivity of the films deposited on SLS substrate was in the order of $10^{-2}$ ohm cm. Sheet resistance of the films deposited on barrier layer coated soda lime silica glass substrate was found to be relatively less.
Keywords
Sol-gel; Antimony doped tin oxide; Thin film; Optical properties; Electrical properties;
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1 A. V. Tadeev, G. Delabougliseand, and M. Labeau, Thin Solid Films, 337, 163 (1999) . [DOI: http://dx.doi.org/10.1016/S0040-6090(98)01392-3].   DOI   ScienceOn
2 V. S. Vaishnav, P. D. Patel, and N. G. Patel, Thin Solid Films, 487, 277 (2005). [DOI: http://dx.doi.org/10.1016/j.tsf.2005.01.079].   DOI   ScienceOn
3 S. Wu, Q. Zhao, D. Miao, and Y. Dong, Journal of Rare Earths, 28, 189 ( 2010). [DOI: http://dx.doi.org/10.1016/S1002-0721(10)60377-8].   DOI   ScienceOn
4 T. R. Giraldi, M. T. Escote, A. P. Maciel, E. Longo, E. R. Leite, and J. A. Varela, Thin Solid Films, 515, 2678 (2006). [DOI: http://dx.doi.org/10.1016/j.tsf.2006.06.025].   DOI   ScienceOn
5 A. Chaturvedi, V. N. Mishra, R. Dwivedi, and S. K. Srivatava, Microelectr. J., 31, 283 (2000). [DOI: http://dx.doi.org/10.1016/S0026-2692(99)00147-0].   DOI   ScienceOn
6 H. Yang, D. Fu, M. Jiang, J. Duan, F. Zhang, X. Zeng, and U. Bach, Thin Solid Films, 531, 519 (2013). [DOI: http://dx.doi.org/10.1016/j.tsf.2013.01.014].   DOI   ScienceOn
7 I. S. Song, S. W. Heo, J. H. Lee, J. R. Haw, and D. K. Moon, Journal of Industrial and Engineering Chemistry, 18, 312 (2012). [DOI: http://dx.doi.org/10.1016/j.jiec.2011.11.051].   DOI   ScienceOn
8 A.H.T. Le, S. Ahn, S. Kim, S. Han, S. Kim, H. Park, C.P.T. Nguyen, V. A. Dao, and J. Yi, Energy Conversion and Management, 87, 191 (2014). [DOI: http://dx.doi.org/10.1016/j.enconman.2014.07.021].   DOI   ScienceOn
9 J. Feng, B. Huang, and M. Zhong, Journal of Colloid and Interface Science, 336, 268 (2009). [DOI: http://dx.doi.org/10.1016/j.jcis.2009.03.025].   DOI   ScienceOn
10 S. G. Ansari, Z. A. Ansari, H. K. Seo, G. S. Kim, Y. S. Kim, G. Khang, H. S. Shin, Sensors and Actuators B: Chemical, 132, 265 (2008). [DOI: http://dx.doi.org/10.1016/j.snb.2008.01.036].   DOI   ScienceOn
11 T. D. Senguttuvan and L. K. Malhotra, Thin Solid Films, 289, 22 (1996). [DOI: http://dx.doi.org/10.1016/S0040-6090(96)08921-3].   DOI   ScienceOn
12 K. Y. Rajpure, M. N. Kusumade, M. N. Neumann-Spallart, and C. H. Bhosale, Mater. Chem. Phys., 64, 184 (2000). [DOI: http://dx.doi.org/10.1016/S0254-0584(99)00256-4].   DOI   ScienceOn
13 B. Thangaraju, Thin Solid Films, 402, 71 (2002). [DOI: http://dx.doi.org/10.1016/S0040-6090(96)08921-3].   DOI   ScienceOn
14 K. S. Kim, S. Y. Yoon, W. J. Lee, and K. H. Kim, Surf. Coat. Tech., 138, 229 (2001). [DOI: http://dx.doi.org/10.1016/S0257-8972(00)01114-2].   DOI   ScienceOn
15 K. H. Kim, S. W. Lee, D. W. Shin, and C. G. Park, J. Am. Ceram. Soc., 77, 915 (1994). [DOI: http://dx.doi.org/10.1111/j.1151-2916.1994.tb07247.x].   DOI   ScienceOn
16 C. Terrier, J. P. Chatelon, R. Berjoan, and J. A. Roger, Thin Solid Films, 263, 37 (1995). [DOI: http://dx.doi.org/10.1016/0040-6090(95)06543-1].   DOI   ScienceOn
17 W. A. Badawy and E. A. El-Taher, Thin Solid Films, 158, 277 (1988). [DOI: http://dx.doi.org/10.1016/0040-6090(88)90031-4].   DOI   ScienceOn
18 B. Orel, U. Lavrencic-Stanger, Z. Crnjak-Orel. P. Bukovec, and M. Kosec, J. Non-Cryst. Solids, 167, 272 (1997). [DOI: http://dx.doi.org/10.1016/0022-3093(94)90250-X].
19 J. I. Pankove, Optical Processes in Semiconductors (Prentice-Hall Inc., Englewood Cliffs, NJ, 1971) p. 34-42.
20 I. Hamberg and C. G. Granqvist, J. Appl. Phys., 60, R123 (1986). [DOI: http://dx.doi.org/10.1063/1.337534].   DOI
21 C. Terrier, J. P. Chatelon, and J. A. Roger, Thin Solid Films, 295, 95 (1997). [DOI: http://dx.doi.org/10.1016/S0040-6090(96)09324-8].   DOI   ScienceOn
22 Y. S He, J. C. Campbell, R. C. Murphy, M. F. Arendt, and J. S. Swinnea, J. Mater. Res., 8, 3131 (1993). [DOI: http://dx.doi.org/10.1557/JMR.1993.3131 (About DOI)].   DOI
23 J. M. Themlin, R. Sporken, J. Darville, R. Caudano, J. M. Gilles, and R. L. Johnson, Phys. Rev., B42, 11914 (1990). [DOI: http://dx.doi.org/10.1103/PhysRevB.42.11914].   DOI   ScienceOn
24 S. Shanti, C. Subramanian, and P. Ramasamy, J. Cryst. Growth, 197, 858 (1999). [DOI: http://dx.doi.org/10.1016/S0022-0248(98)01066-5].   DOI   ScienceOn
25 K. Suzuki and M. Mizuhashi, Thin Solid Films, 97, 119 (1982). [DOI: http://dx.doi.org/10.1016/0040-6090(82)90221-8].   DOI   ScienceOn
26 N. Tigau, V. Ciupina, and G. Prodan, J. Cryst. Growth, 277, 529 (2005). [DOI: http://dx.doi.org/10.1016/S0022-0248(98)01066-5].   DOI   ScienceOn
27 E. Kh. Shokr, M. M. Wakkad, H. A. Abd El-Ghanny, and H. M. Ali, J. Phys. Chem. Solids, 61, 75 (2000). [DOI: http://dx.doi.org/10.1016/S0022-3697(99)00234-6].   DOI   ScienceOn