• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제40회 동계학술대회 초록집
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• pp.87-87
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• 2011

Oxide semiconductors are attractive materials for thin-film electronics and optoelectronics due to compatibility with synthesis on large-area, glass and flexible substrate. However, development of thin-film electronics has been hampered by the limited number of semiconducting oxides that are p-type. We report on the effect of the oxygen partial pressure ratio in the gas mixture on the electrical and optical properties of spinel Mg:$ZnCo_2O_4$ thin films deposited at room temperature using RF sputtering, that exhibit p-type conduction. The thin-films are deposited at room temperature in a background of oxygen using a polycrystalline Mg:$ZnCo_2O_4$ ablation target. The p-type conduction is confirmed by positive Seebeck coefficient and positive Hall coefficient. The electrical resistivity and carrier concentration in on dependent Mg:$ZnCo_2O_4$ thin films were found to be dependent on the oxygen partial pressure ratio. As a result, it is revealed that the Mg:$ZnCo_2O_4$ thin-films were greatly influenced on the electrical and optical properties by the oxygen partial pressure condition. The visible region of the spectrum of 36~85%, and hole mobility of 1.1~3.7 $cm^2$/Vs, were obtained.

• Current Optics and Photonics
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• 제2권4호
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• pp.348-355
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• 2018

How to measure the creepage distance of an insulator quickly and accurately is a problem for the power industry at present, and the noticeable concern is that the high voltage insulation equipment cannot be measured online in the charged state. In view of this situation, we develop an on-line measurement system of creepage distance for high voltage insulators based on binocular stereo vision. We have proposed a method of generating linear structured light using a conical off-axis mirror. The feasibility and effect of two ways to solve the interference problem of strong sunlight have been discussed, one way is to use bandpass filters to enhance the contrast ratio of linear structured light in the images, and the other way is to process the images with adaptive threshold segmentation and feature point extraction. After the system is calibrated, we tested the measurement error of the on-line measurement system with a composite insulator sample. Experimental results show that the maximum relative error is 1.45% and the average relative error is 0.69%, which satisfies the task requirement of not more than 5% of the maximum relative error.

• Current Optics and Photonics
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• 제4권3호
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• pp.229-237
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• 2020

In this study, a beam-coupling system is designed to improve the coupling efficiency of achip-integrated spectrometer when the waveguide is arranged in a linear and discrete manner. In the proposed system the beam is shaped to be anti-Gaussian, to deposit adequate energy in the edge waveguides. The beam is discretely coupled to the corresponding waveguide by a microlens array, to improve the coupling efficiency, and is compressed by a toroidal lens to match the linear discrete waveguides. Based on the findings of this study, the coupling efficiency of the spectrometer is shown to increase by a factor of 2.57. Accordingly, this study provides a reference basis for the improvement of the coupling efficiency of other similar spectrometers.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
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• pp.407-407
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• 2008

무기EL 디스플레이는 고체재료에 전계를 가했을 때 발광하는 현상을 이용한소자로서, 급속도로 발전을 거듭하고 있으나, 유전체층에 강한전계를 가하여 발광하여야 하므로 낮은 Breakdown voltage와 효율의 한계로 인하여 휘도가 낮고 풀 컬러화 디스플레이 등 의 응용에는 적용되고 있지 못하는 실정이다. 본 연구에서는 강유전체 Perovskite 구조를 가지는 ABO3 물질 중 PMN(Lead Magnesium niobate) 과 PZT (Lead Zirconate titanate) 후막을 제조하여 Inorganic EL(Electro Luminance)에 적용하고 소자의 광전특성을 평가하였다. 소자에 사용된 기판은 고온소성에 알맞은 알루미나(Al2O3)기판을 채택 하였으며, 그 위 하부전극으로는 고온소성에 따른 화학적 안정성이 우수한 Au전극을 Screen Printing 하였다. 제조 되어진 PMN후막 페이스트는 PMN(Pb(Mg1/2 Nb2/3)O3) + Glass Frit(Pb-Zn-B) + BaTiO3(99.99%) 로 합성되었으며 하부전극위에 인쇄하였다. 그 다음 PZT sol-gel을 Spin coating으로 도포 하였다. 형광체로 ZnS:Cu.Cl 을 Screen Printing을로 형성하였으며, 평탄화를 위하여 유기물 충을 Screen Printing 공정으로 성막 하였다. 상부전극으로는 DC sputter로 ITO를 증착하여 EL소자 완성 후 Spectro - Chroma meter로 소자특성을 측정하였다. 평탄화를 통한 유기물층에 변화되는 Capacitance를 Oscilloscope로 전압 전류 pulse의 변화에 따른 opto-electronic 특성을 평가하였다.

• 한국재료학회지
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• 제31권7호
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• pp.382-385
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• 2021

Well-crystallized vanadium pentoxide V₂O₅ thin films are fabricated on MgO single crystal substrates by using pulsed-laser deposition technique. The linear optical transmission spectra are measured and found to be in a wavelength range from 300 to 800 nm; the data are used to determine the linear refractive index of the V₂O₅ films. The value of linear refractive index decreases with increasing wavelength, and the relationship can be well explained by Wemple's theory. The third-order nonlinear optical properties of the films are determined by a single beam z-scan method at a wavelength of 532 nm. The results show that the prepared V₂O₅ films exhibit a fast third-order nonlinear optical response with nonlinear absorption coefficient and nonlinear refractive index of 2.13 × 10^-10 m/W and 2.07 × 10^-15 cm²/kW, respectively. The real and imaginary parts of the nonlinear susceptibility are determined to be 3.03 × 10^-11 esu and 1.12 × 10^-11 esu, respectively. The enhancement of the nonlinear optical properties is discussed.

• 센서학회지
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• 제31권4호
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• pp.238-243
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• 2022

In this study, a pyrene-core single molecule with amino (-NH₂) functional group material was hybridized using ZnO quantum dots (QDs). The suppressed performance of the 1-aminopyrene (1-PyNH₂) single molecule as an emissive layer (EML) in light-emitting diodes (LEDs) was exploited by adopting the ZnO@1-PyNH₂ core-shell structure. Unlike pristine 1-PyNH₂ molecules, the ZnO@1-PyNH₂ hybrid QDs formed energy proximity levels that enabled charge transfer. This result can be interpreted as an improvement in surface roughness. The uniform and homogeneous EML alleviates dark-spot degradation. Moreover, LEDs with the ITO/PEDOT:PSS/TFB/EML/TPBi/LiF/Al configuration were fabricated to evaluate the performance of two emissive materials, where pristine-1-PyNH₂ molecules and ZnO@1-PyNH₂ QDs were used as the EML materials to verify the improvement in electrical characteristics. The ZnO@1-PyNH₂ LEDs exhibited blue luminescence at 443 nm (FWHM = 49 nm), with a turn-on voltage of 4 V, maximum luminance of 1500 cd/m², maximum luminous efficiency of 0.66 cd/A, and power efficiency of 0.41 lm/W.

• 한국재료학회지
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• 제32권4호
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• pp.181-185
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• 2022

In this study, phase-pure titanium dioxide TiO₂ ceramics are sintered using standard high-temperature solid-state reaction technique at different temperatures (1,000, 1,100, 1,200, 1,300, 1,400 ℃). The effect of sintering temperature on the densification and impedance properties of TiO₂ ceramics is investigated. The bulk density and average grain size increase with the increase of sintering temperature. Impedance spectroscopy analysis (complex impedance Z^* and complex modulus M^*), performed in a broad frequency range from 100 Hz to 10 MHz, indicates that the TiO₂ ceramics are dielectrically heterogeneous, consisting of grains and grain boundaries. The complex impedance Z^* -plane indicates the resistance of grains of the TiO₂ ceramics increases with increasing sintering temperature, while that of grain boundaries develops in the opposing direction. The complex modulus M^*-plane shows a grain capacitance that seems to be independent of the sintering temperature, while that of the grain boundaries decreases with increasing sintering temperature. These results suggest that different sintering temperatures have effects on the microstructure, leading to changes in the impedance properties of TiO₂ ceramics.

• 한국고분자학회:학술대회논문집
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• 한국고분자학회 2006년도 IUPAC International Symposium on Advanced Polymers for Emerging Technologies
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• pp.229-229
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• 2006

Recently there has been significant interest in utilizing functional semiconductor polymers for electronic and opto-electronic devices such as Light-emitting diodes, thin film field effect transistors, solar cells, displays, and chemical and biosensors. However, better materials and further understanding of their electronic properties are critical for devices based on these materials. In this work, we use various scanning probe techniques, spectroscopy, and device fabrication to study the molecular interactions, optical and charge transport properties in conjugated polyelectrolytes. Using chemical synthesis approach, we are able to tune the molecular packing and interactions in these materials, which in turn, influence their electronic properties and device performance.

• 한국진공학회지
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• 제22권6호
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• pp.313-320
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• 2013

실리콘(Silicon, Si) 기판과 $Al_{0.3}Ga_{0.7}As$/GaAs 다중 양자 우물(multiple quantum wells, MQWs) 간의 격자 부정합 해소를 위해 $AlAs_xSb_{1-x}$ 층이 단계 성분 변화 완충층(step-graded buffer, SGB)으로 이용되었다. $AlAs_xSb_{1-x}$ 층 상에 형성된 GaAs 층의 RMS 표면 거칠기(root-mean-square surface roughness)는 $10{\times}10{\mu}m$ 원자 힘 현미경(atomic force microscope, AFM) 이미지 상에서 약 1.7 nm로 측정되었다. $AlAs_xSb_{1-x}$/Si 기판 상에 AlAs/GaAs 단주기 초격자(short period superlattice, SPS)를 이용한 $Al_{0.3}Ga_{0.7}As$/GaAs MQWs이 형성되었다. $Al_{0.3}Ga_{0.7}As$/GaAs MQW 구조는 약 10 켈빈(Kalvin, K)에서 813 nm 부근의 매우 약한 포토루미네선스(photoluminescence, PL) 피크를 보였고, $Al_{0.3}Ga_{0.7}As$/GaAs MQW 구조의 RMS 표면 거칠기는 약 42.9 nm로 측정되었다. 전자 투과 현미경(transmission electron microscope, TEM) 단면 이미지 상에서 AlAs/GaAs SPS 로부터 $Al_{0.3}Ga_{0.7}As$/GaAs MQWs까지 격자 결함들(defects)이 관찰되었고, 이는 격자 결함들이 $Al_{0.3}Ga_{0.7}As$/GaAs MQW 구조의 표면 거칠기와 광 특성에 영향을 주었음을 보여준다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
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• pp.77-77
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• 2007

The development of next generation displays such as flexible display is a major challenge. Most materials and processes in current flat panel display industry cannot be transferred to flexible substrates. Typically, indium tin oxide (ITO) thin films are brittle and need to be deposited at high temperature to achieve an optimal opto-electrical property, therefore ITO films cannot be used as a flexible electrode. Up to date, many alternative materials to ITO have been proposed such as conductive polymers, nanometals, solution deposited transparent conductive oxide(TCO) and carbon nanotubes(CNTs). CNT based transparent conductive films are fabricated on glass and polymer substrates. CNT thin films exhibit a sheet resistance ($R_s$) of nearby $10^3\;{\Omega}/sq$ with a transmittance of around 80% on the visible light range, which is attributed by excellent dispersion and interaction among CNTs, solvents and polymeric binders. This talk will present the current studies, opto-electrical properties, design criteria and its applications for CNT-based transparent conductive films.