• Title/Summary/Keyword: Opto-electronic

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Electrical Properties and Reliability of the Photo-conductive CdS Thin Films for Flexible Opto-electronic Device Applications (유연성 광전도 CdS 박막의 증착조건에 따른 전기적 특성 및 신뢰성 평가 연구)

  • Hur, Sung-Gi;Cho, Hyun-Jin;Park, Kyoung-Woo;Ahn, Jun-Ku;Yoon, Soon-Gil
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.22 no.12
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    • pp.1023-1027
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    • 2009
  • Cadmium sulfide (CdS) thin film for flexible optical device applications were prepared at $H_2/(Ar+H_2)$ flow ratios on polyethersulfon (PES) flexible polymer substrates at room temperature by radio frequency magnetron sputtering technique. The CdS thin films deposited at room temperature showed a (002) preferred orientation and the smooth surface morphologies. Films deposited at a hydrogen flow ratio of 25% exhibited a photo- and dark-sheet resistance of about 50 and $2.7\;{\times}\;10^5\;{\Omega}/square$, respectively. From the result of the bending test, CdS films exhibit a strong adhesion with the PES polymer substrates and the $Al_2O_3$ passivation layer deposited on the CdS films only shows an increase of the resistance of 8.4% after exposure for 120 h in air atmosphere.

Analysis of Joint Transmit and Receive Antenna Selection in CPM MIMO Systems

  • Lei, Guowei;Liu, Yuanan;Xiao, Xuefang
    • KSII Transactions on Internet and Information Systems (TIIS)
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    • v.11 no.3
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    • pp.1425-1440
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    • 2017
  • In wireless communications, antenna selection (AS) is a widely used method for reducing comparable cost of multiple RF chains in MIMO systems. As is well known, most of literatures on combining AS with MIMO techniques concern linear modulations such as phase shift keying (PSK) and quadrature amplitude modulation (QAM). The combination of CPM and MIMO has been considered an optimal choice that can improve its capacity without loss of power and spectrum efficiency. The aim of this paper is to investigate joint transmit and receive antenna selection (JTRAS) in CPM MIMO systems. Specifically, modified incremental and decremental JTRAS algorithms are proposed to adapt to arbitrary number of selected transmit or receive antennas. The computational complexity of several JTRAS algorithms is analyzed from the perspective of channel capacity. As a comparison, the performances of bit error rate (BER) and spectral efficiency are evaluated via simulations. Moreover, computational complexity of the JTRAS algorithms is simulated in the end. It is inferred from discussions that both incremental JTRAS and decremental JTRAS perform close to optimal JTRAS in BER and spectral efficiency. In the sense of practical scenarios, adaptive JTRAS can be employed to well tradeoff performance and computational complexity.

Highly Sensitive Partial Discharge Sensor with Remote Monitoring Capabilities (원격감시 기능을 갖는 고감도 부분방전센서)

  • Choi, Kyoo-Nam
    • The Journal of the Korea institute of electronic communication sciences
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    • v.10 no.3
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    • pp.349-356
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    • 2015
  • Remote monitoring partial discharge sensor, equipping with hybrid filter combining optical and electrical noise reduction capabilities and with signal integrating function to calculate total arc energy, was investigated. Hybrid filter showed insensitivity to fluorescent and incandescent lamps under simulated distribution panel condition. Signal integrating function showed selective detection capability corresponding to different arc energy levels, while convention arc sensor had difficulty to discriminate arc energy level due to bursty arc waveform and peak level detection characteristics. The sensor showed possibility for application to remote monitoring partial discharge sensor, since it detected arc energy level corresponding to normal open and close discharge in low voltage 100A MCCB at 2m distance.

Etching properties of sapphire substrate using $CH_4$/Ar inductively coupled plasma ($CH_4$/Ar 유도 결합 플라즈마를 이용한 Sapphire 기판의 식각 특성)

  • Um, Doo-Seung;Kim, Gwan-Ha;Kim, Dong-Pyo;Yang, Xue;Kim, Chang-Il
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2008.11a
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    • pp.102-102
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    • 2008
  • Sapphire (${\alpha}-Al_2O_3$) has been used as the substrate of opto-electronic device because of characteristics of thermal stability, comparatively low cost, large diameter, optical transparency and chemical compatibility. However, there is difficulty in the etching and patterning due to the physical stability of sapphire and the selectivity with sapphire and mask materials [1,2]. Therefore, sapphire has been studied on the various fields and need to be studied, continuously. In this study, the etching properties of sapphire substrate were investigated with various $CH_4$/Ar gas combination, radio frequency (RF) power, DC-bias voltage and process pressure. The characteristics of the plasma were estimated for mechanism using optical emission spectroscopy (OES). The chemical compounds on the surface of sapphire substrate were investigated using energy dispersive X-ray (EDX). The chemical reaction on the surface of the etched sapphire substrate was observed by X-ray photoelectron spectroscopy (XPS). Scanning electron microscopy (SEM) was used to investigate the vertical and slope profiles.

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Stage System for LCD Exposure Equipment Using Touch-type Displacement Sensor (접촉형 변위센서를 이용한 LCD노광기용 스테이지 시스템)

  • Yim, Kwang-Kuk;Seo, Hwa-Il;Cho, Hyun-Chan;Kim, Kwang-Sun;Kang, Heung-Seok
    • Journal of the Semiconductor & Display Technology
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    • v.6 no.1 s.18
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    • pp.7-10
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    • 2007
  • In an effort to reduce weaknesses of existing laser displacement sensor-based system, a sensing device for distance and balance of mask-substrate gap using touch-type displacement sensor was suggested. The device suggested in this study is expected to solve the problems of prices and reflections, by means of a touch-type sensor. LCD exposure equipment stage system including suggested sensing device was realized to assess the characteristics of sensing the balance and gap between mask and substrate. It was verified that a touch-type displacement sensor-based device to adjust the balance and distance of mask-substrate gap suggested in this study can be applicable to LCD expose equipment in practice.

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Optical and Electrical Properties of ZnO Hybrid Structure Grown on Glass Substrate by Metal Organic Chemical Vapor Deposition (유기금속화학증착법으로 유리기판 위에 성장된 산화아연 하이브리드 구조의 광학적 전기적 특성)

  • Kim, Dae-Sik;Kang, Byung Hoon;Lee, Chang-Min;Byun, Dongjin
    • Korean Journal of Materials Research
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    • v.24 no.10
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    • pp.543-549
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    • 2014
  • A zinc oxide (ZnO) hybrid structure was successfully fabricated on a glass substrate by metal organic chemical vapor deposition (MOCVD). In-situ growth of a multi-dimensional ZnO hybrid structure was achieved by adjusting the growth temperature to determine the morphologies of either film or nanorods without any catalysts such as Au, Cu, Co, or Sn. The ZnO hybrid structure was composed of one-dimensional (1D) nanorods grown continuously on the two-dimensional (2D) ZnO film. The ZnO film of 2D mode was grown at a relatively low temperature, whereas the ZnO nanorods of 1D mode were grown at a higher temperature. The change of the morphologies of these materials led to improvements of the electrical and optical properties. The ZnO hybrid structure was characterized using various analytical tools. Scanning electron microscopy (SEM) was used to determine the surface morphology of the nanorods, which had grown well on the thin film. The structural characteristics of the polycrystalline ZnO hybrid grown on amorphous glass substrate were investigated by X-ray diffraction (XRD). Hall-effect measurement and a four-point probe were used to characterize the electrical properties. The hybrid structure was shown to be very effective at improving the electrical and the optical properties, decreasing the sheet resistance and the reflectance, and increasing the transmittance via refractive index (RI) engineering. The ZnO hybrid structure grown by MOCVD is very promising for opto-electronic devices as Photoconductive UV Detectors, anti-reflection coatings (ARC), and transparent conductive oxides (TCO).

Theoretical Investigation on Collinear Phase Matching Stimulated Polariton Scattering Generating THz Waves with a KTP Crystal

  • Tan, Lian;Yuan, Bin;Li, Yongjun;Wang, Silei;Zhang, Hongtao;Bing, Pibin;Yao, Jianquan;Li, Zhongyang
    • Current Optics and Photonics
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    • v.3 no.4
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    • pp.342-349
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    • 2019
  • We present a theoretical research concerning terahertz (THz) wave generation with $KTiOPO_4$ (KTP) by collinear phase matching (CPM) stimulated polariton scattering (SPS). Both CPM and corresponding nonzero nonlinear coefficients can be simultaneously realized with $s{\rightarrow}f+f$ in yz plane, $s{\rightarrow}f+s$ with ${\theta}$ < ${\Omega}$ in xz plane and $s{\rightarrow}f+f$ with ${\theta}$ < ${\Omega}$ in xz plane. The effective nonlinear coefficients including electronic nonlinearities and ionic nonlinearities are calculated. Based on the parameter values of refractive indices, absorption coefficients and effective nonlinear coefficients, we simulate THz wave intensities generated with CPM SPS by solving coupled wave equations and give the relationship among the maximum THz wave intensity, optimal crystal length and the angle ${\theta}$. The calculation results demonstrate that CPM SPS with KTP can generate THz waves with high intensities and quantum conversion efficiencies.

Anion Exchange Reaction Dynamics in Cesium Lead Halide Perovskite Quantum Dots (Cesium Lead Halide 페로브스카이트 양자점의 음이온 교환 반응 동역학)

  • Lee, See Maek;Jung, Hyunsung;Park, Woonik;Lim, Hyunseob;Bang, Jiwon
    • Journal of the Korean institute of surface engineering
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    • v.51 no.5
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    • pp.257-262
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    • 2018
  • Cesium lead halide perovskite quantum dots (QDs) have recently emerged as highly promising opto-electronic materials. Despite the relative facile anion exchange reactions in cesium lead halide perovskite QDs, in depth study of the anion exchange reactions such as reaction kinetics are required that can provide insight into the crystal transformation in the cesium lead halide perovskite QDs. Herein, we investigated the anion exchange reaction from $CsPbI_3$ QDs to $CsPbBr_3$ QDs with varying the particle size of the starting $CsPbI_3$ QDs. By characterizing the PL spectra in the anion exchange reaction process, we observed that discontinuous PL peak shifts during I-to-Br anion exchange reaction in starting $CsPbI_3$ QDs over a critical size. Origin of the discontinuous I-to-Br anion exchange kinetics are mainly due to thermodynamically unstable nature of the $CsPb(Br/I)_3$ alloy QDs.

The Characteristic of Passive Elements on Aluminum Nitride Substrate (AIN 기판의 수동 소자 특성)

  • Kim, Seung-Yong;Yook, Jong-Min;Nam, Choong-Mo
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.19 no.2
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    • pp.257-262
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    • 2008
  • In this paper, the key parameters of $CO_2$ laser(focus depth, air blow rate, total laser beam time, number of pulse) are experimented for thru-hole and scribing line on AIN(aluminum nitride) substrate with high thermal conductivity. And, microstrip line & spiral planar inductor are fabricated on AIN substrate using 5 um Cu-plating with self-masking technique. The microstrip line of AIN has 0.1 dB/mm attenuation at 10 GHz and 6 nH spiral planar inductor has 56 maximum quality factor at 1 GHz. Thus, the AIN substrate is promising for GHz applications of high power area.