• Journal of Electrical Engineering and Technology
• /
• v.11 no.6
• /
• pp.1582-1589
• /
• 2016

In this paper the integration of Distributed Generation (DG) in radial distribution system is investigated by computing the optimal site and size of DG to be placed. An analytical expression based on equivalent current injection has been derived by utilizing topological structure of radial distribution system to find optimal size of DG to minimize losses. In the presented formulation, the optimal DG placement is obtained without repeatedly computing the load flow. The proposed formulation can be used to find the optimal size of all types of DGs namely Type-I, Type-II, Type-III and Type-IV DGs. The investigations are carried out on IEEE 33-bus and 69-bus radial distribution systems. The optimal DG placement results into reduction in active and reactive power losses and improvement in voltage profile of the buses.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.33 no.3
• /
• pp.169-172
• /
• 2020

In this paper, the effect of hot carrier injection on an n-bulk fin field-effect transistor (FinFET) is analyzed. The hot carrier injection method is applied to determine the performance change after injection in two ways, channel hot electron (CHE) and drain avalanche hot carrier (DAHC), which have the greatest effect at room temperature. The optimum condition for CHE injection is V_G=V_D, and the optimal condition for DAHC injection can be indirectly confirmed by measuring the peak value of the substrate current. Deterioration by DAHC injection affects not only hot electrons formed by impact ionization, but also hot holes, which has a greater impact on reliability than CHE. Further, we test the amount of drain voltage that can be withstood, and extracted the lifetime of the device. Under CHE injection conditions, the drain voltage was able to maintain a lifetime of more than 10 years at a maximum of 1.25 V, while DAHC was able to achieve a lifetime exceeding 10 years at a 1.05-V drain voltage, which is 0.2 V lower than that of CHE injection conditions.

• Transactions on Electrical and Electronic Materials
• /
• v.6 no.5
• /
• pp.233-237
• /
• 2005

In the device structure of ITO/hole injection layer/N, N'-biphenyl-N, N'-bis-(1-naphenyl)-[1,1'-biphenyl]4,4'-diamine(NPB)/tris(8-hydroxyquinoline) aluminum$(Alq_3)/Al$, we investigated an effect of hole-injection materials (PTFE, PVK) on the electrical characteristics and efficiency of organic light-emitting diodes. A thermal evaporation was performed to make a thickness of NPB layer with a evaporation rate of $0.5\~1.0\;\AA/s$ in a base pressure of $5\times10^{-6}$ Torr. We measured current-voltage characteristics and efficiency with a thickness variation of hole-injection layer. The PTFE and PVK hole-injection layer improve a performance of the device in several aspects, such as good mechanical junction, reducing the operating voltage and energy band adjustment. Compared with the devices without a hole-injection layer, we have obtained that an optimal thickness of NPB was 20 nm in the device structure of $ITO/NPB/Alq_3/Al$. And using the PTFE or PVK hole-injection layer, the external quantum efficiencies of the devices were improved by $24.5\%\;and\;51.3\%$, respectively.

• Transactions on Electrical and Electronic Materials
• /
• v.8 no.6
• /
• pp.260-264
• /
• 2007

We have studied stability in organic light-emitting diode depending on buffer layer and cathode. A transparent electrode of indium-tin-oxide(ITO) was used as an anode. An electron injection energy barrier into organic material is different depending on a work function of cathodes. Theoretically, the energy barriers for the electron injection are 1.2 eV, -0.1 eV, and 0.0 eV for Al, LiAl, and LiF/Al at 300 K, respectively. We considered the cases that holes are injected to organic light-emitting diode. The hole injection energy barrier is about 0.7 eV between ITO and TPD without buffer layer. For hole-injection buffer layers of CuPc and PEDOT:PSS, the hole injection energy barriers are 0.4 eV and 0.5 eV, respectively. When the buffer layer of CuPc and PEDOT:PSS is existed, we observed the effects of hole injection energy barrier, and a reduction of operating-voltage. However, in case of PVK buffer layer, the hole injection energy barrier becomes high(1.0 eV). Even though the operating voltage becomes high, the efficiency is improved. A device structure for optimal lifetime condition is ITO/PEDOT:PSS/TPD/$Alq_3$/LiAl at an initial luminance of $300cd/m^2$.

• Journal of the Korean Society for Precision Engineering
• /
• v.26 no.2
• /
• pp.54-62
• /
• 2009

The purpose of this study is to develop a piezo injector driver for common-rail direct injection diesel engines. In this research, we analyzed the electrical and mechanical characteristics of the piezo actuator through experiments. Current flow and charging voltage of the piezo injector are controlled by the PWM signal of variable duty ratio in order to realize both fast response and low peak current. The optimal switching duty ratio was designed by modeling and analyzing of the piezo driver circuit. In order to avoid resonance and unacceptably long settling time, appropriate frequency range of the PWM signal was derived based on the driver circuit model. The developed injector driver was validated by experiments under various fuel rail pressure, injection duration, and charging voltage.

• Journal of Power Electronics
• /
• v.19 no.2
• /
• pp.560-568
• /
• 2019

This paper studies the inherent relationship between currents and zero-sequence components. Then a precise algorithm is proposed to calculate the injected zero-sequence component to control the DC-Link neutral-point voltage balance, which can result in a more efficient and flexible neutral point voltage balance with a desirable performance. In addition, it is shown that carried-based PWM with the calculated zero-sequence component scheme can be equivalent to space-vector pulse-width modulation (SVPWM). Based on the proposed method, the optimal zero-sequence component of the feasible modulation indices is analyzed. In addition, the unbalanced load limitation of the DC-Link neutral-point voltage balance control is also revealed. Simulation and experimental results are shown to verify the validity and practicality of the proposed algorithm.

• Transactions of the Korean Society of Automotive Engineers
• /
• v.6 no.1
• /
• pp.43-51
• /
• 1998

Most of fuel-injection system operated with mechanical methods are difficult to control the injection quantity and injection timing as well as injection rate exactly. Moreover high pressure injection scheme is never be realized with conventional one. On the other hand, serious air pollution can be lessened with injection system equipped with those functions. Therefore, electronically controlled Unit Injuctor(UI) appeared to satify above mentioned desires. However, it is still difficult that the most important part, especially solenoid valve, is analyzed precisely, because of the existence of complex combination of electromagnetics, electrics and dynamic problems. In this study, experimental and theoretical analysis are accomplished for understanding of solenoid valve characteristics and further its design. As the result, the follows are obtained 1) As the increase of wire diameter, the response time became shorter and optimal inductance existed in relative with the response time and wire diameter. 2) According to increasing input voltage, the traction force increased, otherwise the response time was shortened. 3) As the increase of armature stroke, the traction force decreased and the response time became longer.

• Analytical Science and Technology
• /
• v.17 no.2
• /
• pp.192-197
• /
• 2004

The discrimination of bracken (Korean vs. Chinese) has been attempted using capillary electrophoresis (CE). Bracken (Pteridium aquilinum) was extracted with 30% methanol and separated on a uncoated fused-silica ($50{\mu}m{\times}27cm$) capillary. Conditions for optimal analysis include: temperature, $40^{\circ}C$; voltage, 8 kV; and pressure injection time, 5 sec. The optimal separation buffer was 0.3 M borate buffer (pH 8.5) containing 40 mM CHAPS with 30% ethylene glycol. Under the optimal conditions established for CE, the ratio of specific peak area (peak PA-1) to other peak area (peak PA-2) was effective in discrimination of Korean and Chinese bracken. The mean accuracy for discrimination of Korean and Chinese brackens were 80% and 86%, respectively.

• Journal of Embryo Transfer
• /
• v.8 no.2
• /
• pp.151-157
• /
• 1993

The present study was undertaken to determine the optimal condition for parthenogenetic activation of rabbit oocytes by electric stimulation in vitro in an attempt to develop nuclear transplantation techniques for cloning mammalian embryos and animals. Freshly ovulated oocytes were collected from superovulated rabbits from 13 to 26 hrs. after hCG injection. The cumulus-free oocytes were activated parthenogetically by repeated stimuli of square direct electric pulses in O.3M mannitol solution. After applying electric stimulations of different voltages, pulse durations and pulse times, all of the oocytes were cultured in TCM-199 with 10% FCS for 96 hours in a 5% $CO_2$ incubator, and their developmental potential in vitro was examined. The higher activation rate (68.9%) was achieved at the voltage of 2.0kv/cm, the pulse duration of 60 $\mu$sec and three pulse times and the activation rate of 100% was achieved at the pulse duration of 100 and 200 $\mu$sec, the voltage of 1.5kv/cm and three pulse times. Although the higher rates of activation of oocytes were achieved at 100 and 200 $\mu$sec, none of them developed to blastocyst in vitro. The oocytes collected 18~20 hours post hCG injection showed the highest rate of activation and development to blastocyst in vitro than the oocytes collected 13~15 or 25~26 hours post hCG injection. Therefore, it can be suggested that the application of electric stimulation of 2.0kv/cm, 60 $\mu$sec and three pulse times to the oocytes collected at 18~20 hours post hCG injection would be more beneficial for the parthenogenetic activation of oocytes in rabbits.

• Journal of information and communication convergence engineering
• /
• v.11 no.4
• /
• pp.288-292
• /
• 2013

In this paper, a carbon implant is investigated in detail from the perspectives of performance advantages and side effects for the thick n-type metal-oxide-semiconductor field-effect transistor (n-MOSFET). Threshold voltage ($V_{th}$) adjustment using a carbon implant significantly improves the $V_{th}$ mismatch performance in a thick (3.3-V) n-MOS transistor. It has been reported that a bad mismatch occurs particularly in the case of 0.11-${\mu}m$ $V_{th}$ node technology. This paper investigates a carbon implant process as a promising candidate for the optimal $V_{th}$ roll-off curve. The carbon implant makes the $V_{th}$ roll-off curve perfectly flat, which is explained in detail. Further, the mechanism of hot carrier injection lifetime degradation by the carbon implant is investigated, and new process integration involving the addition of a nitrogen implant in the lightly doped drain process is offered as its solution. This paper presents the critical side effects, such as Isub increases and device performance shifts caused by the carbon implant and suggests an efficient method to avoid these issues.