• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.29 no.5
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• pp.263-267
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• 2016

In this paper, we analyzed the electrical characteristics of NPT planar and trench gate IGBT after designing these devices according to design and process parameter. To begin with, we have designed NPT planar gate IGBT and carried out simulation with T-CAD. Therefore, we extracted design and process parameter and obtained optimal electrical characteristics. The breakdown voltage was 724 V and The on state voltage drop was 1.746 V. The next was carried out optimal design of trench gate power IGBT. We did this research by same drift thickness and resistivity of planar gate power IGBT. As a result of experiment, we obtain 720 V breakdown voltage, 1.32 V on state voltage drop and 4.077 V threshold voltage. These results were improved performance and fabrication of trench gate power IGBT and planar gate Power IGBT.

• Proceedings of the Safety Management and Science Conference
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• 2000.05a
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• pp.265-273
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• 2000

A study to analyze and solve problems of polyacetal resin cutting experiment has presented in this paper. We have taken Taguchi's parameter design approach, specifically orthogonal array, and determined the optimal levels of the selected variables through analysis of the experimental results using S/H ratio.

• Journal of the Korea Safety Management & Science
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• v.5 no.1
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• pp.103-113
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• 2003

A study to analyze and solve problems of a stone surface process experiment has presented in this paper. We have taken Taguchi's parameter design approach, specifically orthogonal array, and determined the optimal levels of the selected variables through analysis of the experimental results using S/N ratio.

• Electrical & Electronic Materials
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• v.9 no.8
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• pp.799-805
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• 1996

In short channel MOSFET, it is very important to establish optimal process conditions because of variation of device characteristics due to the process parameters. In this paper, we used process simulator and device characteristics caused by process parameter variation. From this simulation, it has been ' derived to the dependence relations between process parameters and device characteristics. The experimental result of fabricated short channel device according to the optimal process parameters demonstrate good device characteristics.

• JSTS:Journal of Semiconductor Technology and Science
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• v.15 no.5
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• pp.437-444
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• 2015

In simulation-based circuit optimization, many simulation runs may be wasted while evaluating infeasible designs, i.e. the designs that do not meet the constraints. To avoid such a waste, this paper investigates the use of support vector machine (SVM) classifiers in predicting the design's feasibility prior to simulation and the optimal selection of the SVM parameters, namely, the Gaussian kernel shape parameter ${\gamma}$ and the misclassification penalty parameter C. These parameters affect the complexity as well as the accuracy of the model that SVM represents. For instance, the higher ${\gamma}$ is good for detailed modeling and the higher C is good for rejecting noise in the training set. However, our empirical study shows that a low ${\gamma}$ value is preferable due to the high spatial correlation among the circuit design candidates while C has negligible impacts due to the smooth and clean constraint boundaries of most circuit designs. The experimental results with an LC-tank oscillator example show that an optimal selection of these parameters can improve the prediction accuracy from 80 to 98% and model complexity by $10{\times}$.

• Steel and Composite Structures
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• v.19 no.2
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• pp.349-368
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• 2015

This paper presents a new algorithm to find the optimal distribution of steel diagonal braces (SDB) using artificial bee colony optimization technique. The four different objective functions are employed based on the transfer function amplitude of; the top displacement, the top absolute acceleration, the base shear and the base moment. The stiffness parameter of SDB at each floor level is taken into account as design variables and the sum of the stiffness parameter of the SDB is accepted as an active constraint. An optimization algorithm based on the Artificial Bee Colony (ABC) algorithm is proposed to minimize the objective functions. The proposed ABC algorithm is applied to determine the optimal SDB distribution for planar buildings in order to rehabilitate existing planar steel buildings or to design new steel buildings. Three planar building models are chosen as numerical examples to demonstrate the validity of the proposed method. The optimal SDB designs are compared with a uniform SDB design that uniformly distributes the total stiffness across the structure. The results of the analysis clearly show that each optimal SDB placement, which is determined based on different performance objectives, performs well for its own design aim.

• Journal of the Korea Safety Management & Science
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• v.6 no.2
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• pp.251-262
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• 2004

There is boner process of stone manufacturing to become quality down of stone to consolidated micro crack appearance of stone surface and biotite by fire that is to be route process in stone surface by flame of LPG. And then, it is develop that stone surface process equipment by automation for the work method of boner process can be substitute work method by shotball blasting. To developement of equipment, There is to be down noise and dust. Acording to remove calamity growth hazardous substance in the work environment, there is to solve workplace avoidance factor. We have taken Taguchi's parameter design approch, specifically orthogonal array, and determined the optimal levels of stone surface through analysis of the experimental results using SIN ratio.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.23 no.4
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• pp.273-279
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• 2010

In this paper, we proposed 2500 V Non punch-through(NPT) Insulated gate bipolar transistor(IGBT) for high voltage industry application. we carried out optimal simulation for high efficiency of 2500 V NPT IGBT according to size of device. In results, we obtaind design parameter with 375 um n-drift thickness, 15 um gate length, and 8um emitter windows. After we simulate with optimal parameter, we obtained 2840 V breakdown voltage and 3.4V Vce,sat. These design and process parameter will be used designing of more 2000 V NPT IGBT devices.

• Proceedings of the IEEK Conference
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• 1998.10a
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• pp.645-648
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• 1998

We used a three-dimensional inductance extraction program, Fasthenry for optimal design of the spiral inductors on silicon substrate. The inductance and quality factor of the spiral inductors with various design parameters were calculated so that the optimal parameter value was determined. The spiral inductors then were fabricated using different foundary processes and were measured using the network analyzer and microwave probes. The pad and other parasitics of measurement system were de-embedded using the y-parameter calibration technique. the inductors fabricated using the LG 0.8um process and HP 0.5um process showed the quality factor of 5.8 and 3, respectively. Finally the equivalent circuit farameters of the spiral inductors on silicon substrate were extracted from the measurement data using the matlab.

• Korean Journal of Chemical Engineering
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• v.36 no.3
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• pp.356-367
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• 2019

This work presents an advanced and systematic approach to analytically design the optimal parameters of a two parameter second-order internal model control (IMC) filter that satisfies operational constraints on the output process, the manipulated variable as well as rate of change of the manipulated variable, for a first-order plus dead time (FOPDT) process. The IMC parameters are designed to minimize a control objective function composed of the weighted sum of the error between the process variable and the set point, and the rate of change of the manipulated variable, and to satisfy the desired constraints. The feasible region of the constrained IMC control parameters was graphically analyzed, as the process parameters and the constraints varied. The resulting constrained IMC control parameters were also used to find the corresponding industrial proportional-integral controller parameters of a Smith predictor structure.