• 전기학회논문지
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• 제63권2호
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• pp.224-229
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• 2014

This paper presents the novel voltage control method in power distribution system with distributed generators. The voltage in distribution systems is regulated by Under Load Tap Changer(ULTC) of substation and pole transformer of primary feeders. Recently, Step Voltage Regulator(SVR) is getting located at distribution feeders to regulate effectively voltage of primary feeders. But the effectiveness of SVR decreases due to independent operation between SVR and ULTC, and also the existing Line Drop Compensator(LDC) method considering the distributed generators may be not able to regulate the proper voltage in a permissible range. Thus, this paper presents a optimal voltage control algorithm of SVR by using the secondary voltage data of main transformer in substation.

• 한국전기전자재료학회논문지
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• 제30권4호
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• pp.214-217
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• 2017

An IGBT (insulated gate bipolar transistor) device has an excellent current-conducting capability. It has been widely employed as a switching device to use in power supplies, converters, solar inverters, and household appliances or the like, designed to handle high power. The aim with IGBT is to meet the requirements for use in ideal power semiconductor devices with a high breakdown voltage, an on-state voltage drop, a high switching speed, and high reliability for power-device applications. In general, the concentration of the drift region decreases when the breakdown voltage increases, but the on-resistance and other characteristics should be reduced to improve the breakdown voltage and on-state voltage drop characteristics by optimizing the design and structure changes. In this paper, using the T-CAD, we designed the NPT-IGBT (non punch-through IGBT) and FS-IGBT (field stop IGBT) and analyzed the electrical characteristics of those devices. Our analysis of the electrical characteristics showed that the FS-IGBT was superior to the NPT-IGBT in terms of the on-state voltage drop.

• 대한전기학회논문지:전력기술부문A
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• 제55권4호
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• pp.139-143
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• 2006

Recently, standard of living improved and Information-Communication industry developed rapidly. Thereby, interest about electric power quality is rising worldwide. So, research and Development to enhance electric power quality in various viewpoint until most suitable supply system from each kind device to improve electric power quality. And specially, interest about voltage quality is rising by diffusion increase of information communication appliance and minuteness control appliance etc. Also Power consumption is increasing, but expansion of large size generator by environmental and site security problem is difficult. So, introduction of distribution generation is investigated actively by electric-power industry reorganization. Voltage management of power system had been controlled by ULTC (Under Load Tap Changer) in substation and pole transformer on the high voltage distribution line. But, voltage control device on substation and distribution line is applied each other separatively. Therefore, efficiency of line voltage control equipment is dropping. Also, research about introduction upper limit of distribution generation is consisting continuously. This paper presents cooperation use way between voltage control device and introduction upper limit of distribution generation for most suitable voltage control in distribution power system.

• 전기학회논문지
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• 제63권1호
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• pp.80-84
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• 2014

The discharge characteristics of Surface Dielectric Barrier Discharge (SDBD) reactor are investigated to find optimal driving condition with adjusting various parameter. When the high voltage with sine wave form is applied to SDBD source, successive pulsed current waveforms are observed owing to multiple ignitions through the long discharge channel and wall charge accumulation on the dielectric surface. The discharge voltage, total charge between dielectrics, mean energy and power are calculated from measured current and voltage according to electrode gap and dielectric thickness. Discharge mode transition from filamentary to diffusive glow is observed for narrow gap and high applied voltage case. However, when the diffusive discharge is occurred with high applied voltage, the actual firing voltage is always lower than that with low driving voltage. The $Si_3N_4$, $MgF_2$, $Al_2O_3$ and $TiO_2$ are considered for dielectric protection and high secondary electron emission coefficient. SDBD with $MgF_2$ shows the lowest breakdown voltage. $MgF_2$ thin film is proposed as a protection layer for low voltage atmospheric dielectric barrier discharge devices.

• Journal of Electrical Engineering and Technology
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• 제4권3호
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• pp.310-314
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• 2009

This paper presents the improvement of the voltage profiles of power system networks by the inclusion of Unified Power Flow Controller (UPFC). The mathematical model of the UPFC is incorporated in the load flow algorithm and the L-index is calculated for the different values of the control parameter r $and{\gamma}$. The positioning of the UPFC device is changed to minimize the sum of the squares of the L-indices at all load buses. The test cases considered for the improvement of voltage profile with the WSCC 9-bus and IEEE 30 bus system. With the best position of UPFC along with the control parameters the improvement in voltage profile of the power system networks are obtained. The results obtained are quite encouraging compared with other techniques used to identify the best location of UPFC.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1999년도 추계학술대회 논문집 전문대학교육위원 P
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• pp.52-55
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• 1999

In recent years, much attention has been paid to the voltage collapse phenomena. There has been reported many cases about the voltage collapse in many countries. These voltage collapse phenomena are known as the event that can occur due to reactive power deficits. This paper proposes an efficient method that can pursue the reactive power loss changes and gives the simple voltage collapse proximity indicator(VCPI) based on the reactive power loss sensitivities using optimal techniques. By comparing reactive power loss sensitivity with active power loss sensitivity, it is also proved that VCPI based on reactive power loss sensitivities is more effective. The developed VCPI is derived from the Jacobian matrix of Load Flow and the computational burden is very low and on-line implementation is possible. The proposed method is applied to a IEEE-14 bus test system and reliable and promising results are obtained.

• 전력전자학회논문지
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• 제6권4호
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• pp.38-38
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• 2001

The three-phase diode rectifier with capacitive filter is highly sensitive to line voltage unbalance. Because of its inherent nonlinear characteristics, small line voltage unbalance may cause highly unbalanced line current, causing detrimental effects on power quality. This paper presents a theoretical basis on this ′unbalance amplification effect′ and derives an analytical model of line current characteristics under unbalanced line voltage condition for various modes of operation. The results provide a basic guideline for optimal design of a three-phase diode rectifier with capacitive filter that is most commonly used for interfacing various power conversion equipments to power lines.

• 한국전기전자재료학회논문지
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• 제30권2호
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• pp.63-66
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• 2017

This research was about shielded trench gate power MOSFET for low voltage and high speed. We used T-CAD tool and carried out process and device simulation for exracting design and process parameters. The exracted parameters was used to design shieled and conventional trench gate power MOSFET. And The electrical characteristics of shieled and conventional trench gate power MOSFET were compared and analyzed for their power device applications. As a result of analyzing electrical characteristics, the recorded breakdown voltages of both devices were around 120 V. The electric distributions of shielded and conventional trench gate power MOSFET was different. But due to the low voltage level, the breakdown voltage was almost same. And the other hand, the threshold voltage characteristics of shielded trench gate power MOSFET was superior to convention trench gate power MOSFET. In terms of on resistance characteristics, we obtained optimal oxied thickness of $3{\mu}m$.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2001년도 하계학술대회 논문집 A
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• pp.116-118
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• 2001

The load bus voltage is controlled by not only using several control device but also generation bus voltage adjustment. This paper deals with a load bus voltage control problem which used optimization and load flow technique. The usage of proposed control algorithm is verified through the comparison with normal load flow on the IEEE 14 sample system. The proposed control algorithm can be used to optimal decision of position and capacity for voltage control device.

• 한국전기전자재료학회논문지
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• 제29권2호
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• pp.75-78
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• 2016

This research was designed 700 level power MOSFET for smart LED driver ICs package. And we analyzed electrical characteristics of the power MOSFET as like breakdown voltage, on-resistance and threshold voltage. Because this research is important optimal design for smart LED ICs package, we designed power MOSFET with design and process parameter. As a result of this research, we obtained $60{\mu}m$ N-drift layer depth, 791.29 V breakdown voltage, $0.248{\Omega}{\cdot}cm^2$ on resistance and 3.495 V threshold voltage. We will use effectively this device for smart LED driver ICs package.