• Journal of KIISE:Software and Applications
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• v.37 no.9
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• pp.694-705
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• 2010

The mutation operation is the main operation in the evolutionary programming which has been widely used for the optimization of real valued function. In general, the mutation operation utilizes both a probability distribution and its parameter to change values of variables, and the parameter itself is subject to its own mutation operation which requires other parameters. However, since the optimal values of the parameters entirely depend on a given problem, it is rather hard to find an optimal combination of values of parameters when there are many parameters in a problem. To solve this shortcoming at least partly, if not entirely, in this paper, we propose a new mutation operation in which the parameter for the variable mutation is theoretically estimated from the self-adaptive perspective. Since the proposed algorithm estimates the scale parameter of the Cauchy probability distribution for the mutation operation, it has an advantage in that it does not require another mutation operation for the scale parameter. The proposed algorithm was tested against the benchmarking problems. It turned out that, although the relative superiority of the proposed algorithm from the optimal value perspective depended on benchmarking problems, the proposed algorithm outperformed for all benchmarking problems from the perspective of the computational time.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.70-70
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• 2009

In this paper, we proposed 2500V Non punch-through(NPT) Insulated gate bipolar transistor(IGBT) for high voltage industry application. we carried out optimal simulation for high efficiency of 2500V NPT IGBT according to size of device. In results, we obtaind design parameter with 375um n-drift thickness, 15um gate length, and 8um emitter windows. After we simulate with optimal parameter, we obtained 2840V breakdown voltage and 3.4V Vce,sat. These design and process parameter will be used designing of more 2000V NPT IGBT devices.

• 제어로봇시스템학회:학술대회논문집
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• 2004.08a
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• pp.1168-1172
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• 2004

This paper presents a speed controller based on an adaptive fuzzy algorithm for high performance permanent magnet synchronous motor (PMSM) drives under parameter and load variations. In many speed tracking control systems PI controller has been used due to its simple structure and easy of design. PI controller, however, suffers from the electrical machine parameter variations and disturbances. In order to improve the tracking control performance under load variations, the PI controller parameters are modified during operation by adaptive fuzzy method. This method based on optimal fuzzy logic system has simple structure and computational simplicity. It needs only sample data which is obtained by optimal controller off-line. As the sample data implemented in the adaptive fuzzy system can be modified or extended, a flexible control system can be obtained. Simulation results show the usefulness of the proposed controller.

• Journal of the Korea Safety Management & Science
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• v.6 no.2
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• pp.251-262
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• 2004

There is boner process of stone manufacturing to become quality down of stone to consolidated micro crack appearance of stone surface and biotite by fire that is to be route process in stone surface by flame of LPG. And then, it is develop that stone surface process equipment by automation for the work method of boner process can be substitute work method by shotball blasting. To developement of equipment, There is to be down noise and dust. Acording to remove calamity growth hazardous substance in the work environment, there is to solve workplace avoidance factor. We have taken Taguchi's parameter design approch, specifically orthogonal array, and determined the optimal levels of stone surface through analysis of the experimental results using SIN ratio.

• Proceedings of the Korean Institute of Navigation and Port Research Conference
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• 2016.05a
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• pp.305-307
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• 2016

The purpose of this paper is to determine the optimal values of the gain parameters used in the tracking module for a highly dynamic warship. The algorithm of the tracking module uses the ${\alpha}-{\beta}-{\gamma}$ filter to compute accurate estimates and update the state variables, that is, positions, velocity and acceleration. The filtering coefficients ${\alpha}$, ${\beta}$ and ${\gamma}$ are determined from set values of the damping parameter, ${\xi}$. Optimization is achieved by plotting a range of the damping parameter ${\xi}$ against the corresponding residual error and then selecting the best value of ${\xi}$ with the minimum residual error. Optimal values of the smoothing coefficients are subsequently computed from the selected damping parameter, ${\xi}$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1995.11a
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• pp.236-239
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• 1995

In short channel MOSFET, it is very important to establish optimal process conditions because of variation of devise characteristics due to the process parameters. In this paper, we used process simulator and device simulator in order to optimize process parameter which changes of the device characteristics caused by process parameter variation. From this simulation, it has been derived to the dependence relations between process parameter and device characteristics. The experimental results of fabricated short channel device according to the optimal process parameters demonstrate good device characteristics.

• Electrical & Electronic Materials
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• v.7 no.2
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• pp.107-116
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• 1994

In the manufacturing of VLSI circuits, variations of device characteristics due to the slight differences in process parameters drastically aggravate the performances of fabricated devices. Therefore, it is very important to establish optimal process conditions in order to minimize deviations of device characteristics. In this paper, we used one-dimensional process simulator, SUPREM-II, and two dimensional device simulator, MINIMOS 4.0 in order to extract optimal process parameter which can minimize changes of the device characteristics caused by process parameter variation in the case of short channel nMOSFET and pMOSFET device. From this simulation, we have derived the dependence relations between process parameters and device characteristics. Here, we have suggested a method to extract process parameters from design trend curve(DTC) obtained by these dependence relations. And we have discussed short channel effects and device limitations by scaling down MOSFET dimensions.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.23 no.4
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• pp.273-279
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• 2010

In this paper, we proposed 2500 V Non punch-through(NPT) Insulated gate bipolar transistor(IGBT) for high voltage industry application. we carried out optimal simulation for high efficiency of 2500 V NPT IGBT according to size of device. In results, we obtaind design parameter with 375 um n-drift thickness, 15 um gate length, and 8um emitter windows. After we simulate with optimal parameter, we obtained 2840 V breakdown voltage and 3.4V Vce,sat. These design and process parameter will be used designing of more 2000 V NPT IGBT devices.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.29 no.5
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• pp.263-267
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• 2016

In this paper, we analyzed the electrical characteristics of NPT planar and trench gate IGBT after designing these devices according to design and process parameter. To begin with, we have designed NPT planar gate IGBT and carried out simulation with T-CAD. Therefore, we extracted design and process parameter and obtained optimal electrical characteristics. The breakdown voltage was 724 V and The on state voltage drop was 1.746 V. The next was carried out optimal design of trench gate power IGBT. We did this research by same drift thickness and resistivity of planar gate power IGBT. As a result of experiment, we obtain 720 V breakdown voltage, 1.32 V on state voltage drop and 4.077 V threshold voltage. These results were improved performance and fabrication of trench gate power IGBT and planar gate Power IGBT.

• Journal of Korean Society for Quality Management
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• v.27 no.2
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• pp.218-236
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• 1999

The purpose of parameter design is to determine optimal settings of design parameters of a product or a process such that the performance characteristics of a product exhibit small variabilities around their target values. Taguchi made significant contributions in this area. However, his analysis of the problem focused on only one performance characteristic or response, although in product and process design, multiple characteristics are more common. The critical problem in dealing with multiple characteristics is how to compromise the conflict among the selected levels of the design parameters for each individual characteristic. In this paper, Methodology using SN ratio optimized by univariate technique is proposed and a parameter design procedure to achieve the optimal balance among several different response variables is developed. Existing case studies are solved by the proposed method and the results are compared with ones by the sum of SN ratios, the expected weighted loss, the desirability function, and EXTOPSIS model.