• 대한기계학회:학술대회논문집
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• 대한기계학회 2008년도 추계학술대회B
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• pp.2406-2409
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• 2008

The concept of optical mobility in the optical particle separation was derived. To verify the concept of the optical mobility, three particles were chosen to test the effects of optical mobility, namely, PSL, PMMA and silica particles. Three different experiments were performed. Firstly, retention distances of the different sized particles were measured and predicted. Secondly, retention distances of particles, having same size but different refractive indices, were measured and predicted. Finally, retention distances of the particles, which had the same optical mobility but very different sized and refractive indices, were measured and predicted.

• 의료ㆍ복지 건축 : 한국의료복지건축학회 논문집
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• 제29권1호
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• pp.7-19
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• 2023

Purpose: Mobility impairment persons are all people who experience mobility difficulties in their daily lives, which makes up about 30% of the population in Seoul Metropolitan City; this number is expected to increase with population aging. As the number of mobility impairment persons in need of vision correction increases, it is necessary to create the Universal Design guidelines and to provide the foundation to access convenience facilities at the entrance of optical shops, a health and medical institution. Methods: Of the 2,282 optical shops located in Seoul, 252 optical shops were chosen for data collection of actual photos, from April 10, 2022 to September 4, 2022. Based on the photographs, the height difference between the entrance and the sidewalk, safety handles, and opening and closing methods of entrances were investigated, as these factors correspond to the accessibility and the mobility of the mobility impairment persons. Results: Of the 252 optical shops surveyed, 114 (45.2%) have resolved the problems of height difference through improving horizontal accessibility (61) or using ramps (53). 36 (14.3%) optical shops chose automatic doors for opening and closing methods of the entrance. Implications: The rate of installation of access convenience facilities for the entrance of optical shops is slightly lower than the rate of installation of ramps, surveyed by the Ministry of Health and Welfare. It is necessary to apply the Universal Design to access convenience facilities for the entrance of optical shops for not only the mobility impairment persons but all people, regardless of age or ability, to conveniently access healthcare services.

• 한국광학회:학술대회논문집
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• 한국광학회 2008년도 하계학술발표회 논문집
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• pp.175-176
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• 2008

• 한국세라믹학회지
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• 제47권4호
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• pp.353-356
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• 2010

Zinc oxide (ZnO) thin films were deposited using atomic layer deposition. The electrical and optical properties were characterized using Hall measurements, spectroscopic ellipsometry and UV-visible spectrophotometry. The electronic concentration and the mobility were found to be critically dependent on the deposition temperature, exhibiting increased resistivity and reduced electronic mobility at low temperature. The corresponding optical properties were measured as a function of photon energy ranging from 1.5 to 5.0 eV. The simulated extinction coefficients allowed the determination of optical band gaps, i.e., ranging from 3.36 to 3.41 eV. The electronic carrier concentration appears to be related to the reduction in the corresponding band gap in ZnO thin films.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1992년도 춘계학술대회 논문집
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• pp.101-104
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• 1992

In-doped CdS thin films have been deposited at 150$^{\circ}C$ by simultaneous thermal evaporation of CdS and In. Deposition rate and film thickness were 8A/sec and about 1um, respectively. Indium doping concentration of films varied as Indium source temperature from 500$^{\circ}C$ to 700˚. Properties of In-CdS films have been investigatied by measurements of electrical resistivity, Hall effect, X-ray diffraction and optical trasmission spectra. The conductivity of these films was always n-type. The resistivity, carrier concentration, mobility and optical band gap dependence on Indium source temperature are reported. Carrier concentration and mobility of In-CdS films increased with increasing Indium source temperature: then they decreased. The variation of the optical band gap of In-CdS thin films are related to carrier concentration.

• 한국세라믹학회지
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• 제47권4호
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• pp.329-332
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• 2010

In order to investigate the effect of tail state on the electrical and the optical properties in amorphous IGZO(a-IGZO), a-IGZO films were deposited at room temperature on fused silica substrats using pulsed laser deposition method. The laser pulse energy was used as the processing parameter. In-situ post annealing was carried out at $150^{\circ}C$ right after the film deposition. The $O_2$ partial pressure during the deposition and the post annealing was fixed to 10mTorr. The carrier mobility of the a-IGZO films had a range from 2 to $18\;cm^2/Vs$ at carrier concentrations greater than $10^{18}\;cm^{-3}$. As the laser energy density increased, the Hall mobility increased. And post annealing improved the Hall mobility, as well. The optical property was examined using the ultraviolet-visible spectroscopy. The a-IGZO films that have low Hall mobility exhibited stronger and broader absorption tails in >3.0 eV region. Post annealing reduced the intensity of the tail-like absorption. The absorption tail in a-IGZO films is an important factor which affects the electrical and the optical properties.

• Journal of Magnetics
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• 제18권2호
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• pp.188-191
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• 2013

The magnetic properties for sanal's mobility inside of the lymphatic primo vascular system, the so-called Kyungrak (or meridian) system, are investigated under a low static magnetic field with the anatomy technology and optical microscope. One sanal with a size of 1 ${\mu}m$ under microscope selected and separated from the primo vessels of the primo vascular system are observed in rabbits' lymphatic vessels around abdominal aorta and placed in PBS solution with petridish. The moving displacement of sanal versus the measuring time of 20 Oe below a magnetic field of 80 Oe is stronger in dominanting dependence according to the x-direction than y-direction.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 하계학술대회 논문집
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• pp.309-309
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• 2009

In-Ga-Zn-O (IGZO) has drawn much attention as a compatible material for transparent thin film transistors (TTFT) channel layer due to its high mobility and optical transparency at low processing temperatures. In this work, we investigated the effect of oxygen ambient on structural, electrical and optical properties of amorphous In-Ga-Zn-O (IGZO) thin films by using pulsed laser deposition (PLD). The films were deposited at various oxygen pressures and the structural, electrical and optical properties were investigated. X-ray diffraction (XRD) analysis showed that amorphous IGZO films were grown at all oxygen pressures. The surface morphology and optical properties with various oxygen pressures were studied by field emission scanning electron microscopy (FE-SEM) and UV-VIS spectroscopy, respectively. The grain boundary was observed more apparently and the calculated optical band gap became larger as oxygen pressure increased. To examine the electrical properties, Hall-effect measurements were carried out. The films showed high mobility.

• 한국재료학회지
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• 제30권4호
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• pp.211-216
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• 2020

Amorphous In-Ga-Zn-O (a-IGZO) thin film transistors, because of their relatively low mobility, have limits in attempts to fulfill high-end specifications for display backplanes. In-Zn-O (IZO) is a promising semiconductor material for high mobility device applications with excellent transparency to visible light region and low temperature process capability. In this paper, the effects of working pressure on the physical and electrical properties of IZO films and thin film transistors are investigated. The working pressure is modulated from 2 mTorr to 5 mTorr, whereas the other process conditions are fixed. As the working pressure increases, the extracted optical band gap of IZO films gradually decreases. Absorption coefficient spectra indicate that subgap states increase at high working pressure. Furthermore, IZO film fabricated at low working pressure shows smoother surface morphology. As a result, IZO thin film transistors with optimum conditions exhibit excellent switching characteristics with high mobility (≥ 30㎠/Vs) and large on/off ratio.

• 반도체디스플레이기술학회지
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• 제14권4호
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• pp.25-29
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• 2015

In this study, RF magnetron sputtering was used to investigate the relationship between oxygen vacancy and carrier concentration in a GZO film on an amorphous structure. RF power was fixed at 50W and Ar flow was changed on a glass plate to create a thin film at room temperature. The transmittance of Al-adopted amorphous GZO was measured at 85% or higher; therefore, the transmittance was shown to be outstanding in all films. The hall mobility was also shown to be higher at the film showing the high transmittance at a short-wavelength, whereas the optical energy gap was shown to be higher at the film with high oxygen vacancy. The oxygen vacancy at the amorphous oxide semi-conductor increased the optical energy gap while it was not directly involved in increasing the mobility. The oxygen vacancy increases the carrier concentration while lowering the quality of amorphous structure; such factor, therefore affected the mobility. The increase of amorphous property is a direct way to increase the mobility of amorphous oxide semi-conductor.