• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.2
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• pp.857-860
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• 2004

Cubic CdS thin film with the strongest XRD peak (111) at diffraction angle $(\theta)$ of 26.5 was well made at substrate temperature of $150^{\circ}C$. At that time, lattice constant a of the thin film was $5.79{\AA}$, grain size of that was more over ${\mu}m$ and it's resistivity was over $10^3{\Omega}cm$. And the peak of diffraction intensityat miller index (111) of CdS:In thin film with dopant In of 1 atom% was shown higher about 20 % than undoped CdS thin film. Also, CdS:In thin film had in part hexagonal structure among cubic structure as secondary phase. Lattice constant of a and grain size of secondary phase of the film with dopant In of 1 atom% was $5.81{\AA}$ and around $1{\mu}m$ respectively The lowest resistivity of $5.1{\times}10^{-3}{\Omega}cm$ was appeared on dopant In of 1.5 atom%. Optical band gap of undoped CdS thin film was 2.43 eV and CdS:In thin film with dopant In of 0.5 atom% had the largest band gap 2.49 eV.

• Journal of the Korean Magnetics Society
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• 제25권6호
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• pp.185-188
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• 2015

We have investigated nuclear magnetic resonance of $^{23}Na$ nucleus in $NaMgCl_3$ single crystal in the temperature range 200 K~410 K using FT-NMR spectrometer. The spin-lattice relaxation times $T_1$ of $^{23}Na$ nucleus residing at cubic symmetry in the host crystal was measured as a function of temperature. The $T_1$ of $^{23}Na$ nucleus decreased with increasing temperature. The nuclear spin-lattice relaxation rate $1/T_1$ of $^{23}Na$ in $NaMgCl_3$ single crystal was proportional to the temperature T. This behavior is explained with the characteristic feature of the direct process between the nuclear spins and single phonon, $1/T_1$ being proportional to the absolute temperature. The activation energy calculated was $E_a=4.82J/mol$.

• Journal of the Korean Crystal Growth and Crystal Technology
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• 제20권4호
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• pp.159-163
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• 2010

Co-(0.5 mol%) and Ce-(0~0.3 mol%) doped cubic zirconia ($ZrO_2:Y_2O_3$=64:36 mol%) single crystals grown by a skull melting method were heat-treated in $N_2$ at $1200^{\circ}C$ for 3 hrs. The brown-colored as-grown single crystals were changed into either green or blue color after the heat treatment. Before and after the heat treatment, the YSZ (yttriastabilized zirconia) single crystals were cut for wafer form (${\phi}7mm{\times}t2mm$) and round brilliant cut ($\phi$ 12 mm). The optical and structural properties were examined by UV-VIS spectrophotometer and X-ray diffraction. Absorption by $Ce^{3+}(^2F_{5/2},\;_{7/2}(4f){\rightarrow}^2T_g(5d^1)),\;Co^{2+}(^4A_2(^4F){\rightarrow}^4T_1(^4F)$ or $^4T_1(^4P))$ and $Co^{3+}$, change of ionization energy and lattice parameter were confirmed.

• Journal of the Korean Magnetic Resonance Society
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• 제22권4호
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• pp.107-114
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• 2018

In this exploration, the nuclear magnetic resonance of the $^{207}Pb$ nucleus in $PbWO_4:Mn^{2+}$ and $PbWO_4:Dy^{3+}$ Single Crystals using FT-NMR spectrometer is investigated. The line width of the resonance line for the $^{207}Pb$ nucleus decreases as temperature increases due to motional narrowing. The chemical shift of $^{207}Pb$ NMR spectra also increases as temperature decreases for both crystals. The spinlattice relaxation times $T_1$ of $^{39}K$ nucleus were calculated as a function of temperature (180 K~400 K). The $T_1$ of $^{207}Pb$ nucleus decreases as temperature increases. The dominant relaxation mechanism at the studied temperature range can be deduced as the Raman process, which is the coupling between lattice vibrations and the nuclear spins. This deduction is substantiated by the fact that the nuclear spin-lattice relaxation rate $1/T_1$ of the $^{207}Pb$ nucleus in $PbWO_4:Mn^{2+}$ and $PbWO_4:Dy^{3+}$ single crystal is proportional to $T^2$, or temperature squared. The activation energies for the $^{207}Pb$ nucleus in $PbWO_4:Mn^{2+}$ and $PbWO_4:Dy^{3+}$ single crystals are $E_a=49{\pm}1meV$ and $E_a=47{\pm}2meV$, respectively.

• Bulletin of the Korean Chemical Society
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• 제34권4호
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• pp.1205-1211
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• 2013

The structural and optical properties of the ZnO, Al-doped ZnO, Ga-doped ZnO, and In-doped ZnO nanorods were investigated using field-emission scanning electron microscopy, X-ray diffraction, photoluminescence (PL) and ultraviolet-visible spectroscopy. All the nanorods grew with good alignment on the ZnO seed layers and the ZnO nanorod dimensions could be controlled by the addition of the various dopants. For instance, the diameter of the nanorods decreased with increasing atomic number of the dopants. The ratio between the near-band-edge emission (NBE) and the deep-level emission (DLE) intensities ($I_{NBE}/I_{DLE}$) obtained by PL gradually decreased because the DLE intensity from the nanorods gradually increased with increase in the atomic number of the dopants. We found that the dopants affected the structural and optical properties of the ZnO nanorods including their dimensions, lattice constants, residual stresses, bond lengths, PL properties, transmittance values, optical band gaps, and Urbach energies.

• Proceedings of the Korean Vacuum Society Conference
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• 한국진공학회 2009년도 제38회 동계학술대회 초록집
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• pp.121-121
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• 2010

ZnO is a promising material for the application of high efficiency light emitting diodes with short wavelength region for its large bandgap energy of 3.37 eV which is similar to GaN (3.39 eV) at room temperature. The large exciton binding energy of 60 meV in ZnO provide provides higher efficiency of emission for optoelectronic device applications. Several ZnO/ZnMgO multiple quantum well (MQW) structures have been grown on various substrates such as sapphire, GaN, Si, and so on. However, the achievement of high quality ZnO/ZnMgO MQW structures has been somehow limited by the use of lattice-mismatched substrates. Therefore, we propose the optical properties of ZnO/ZnMgO multiple quantum well (MQW) structures with different well widths grown on lattice-matched ZnO substrates by molecular beam epitaxy. Photoluminescence (PL) spectra show MQW emissions at 3.387 and 3.369 eV for the ZnO/ZnMgO MQW samples with well widths of 2 and 5 nm, respectively, due to the quantum confinement effect. Time-resolved PL results show an efficient photo-generated carrier transfer from the barrier to the MQWs, which leads to an increased intensity ratio of the well to barrier emissions for the ZnO/ZnMgO MQW sample with the wider width. From the power-dependent PL spectra, we observed no PL peak shift of MQW emission in both samples, indicating a negligible built-in electric field effect in the ZnO/$Zn_{0.9}Mg_{0.1}O$ MQWs grown on lattice-matched ZnO substrates.

• The Journal of Korean Institute of Communications and Information Sciences
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• 제25권1B호
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• pp.8-14
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• 2000

This paper analyzes and accesses the gain of optically pumped surface-normal MQW optical amplifiers. The proposed amplifiers have the advantage of polarization independence, high coupling efficiency to and from optical fibers, and flexibility of operating wavelength. We analyzed the gain characteristics of 100 - 200-period MQWs and verified the dependence of a strained lattice and selective doping. Theoretical analysis of such MQWs showsa single-pass gain of 3 dB with broad operation bandwidth. A single-pass gain of 2.6 dB is obtained experimentally in an InGaAs/InGaAlAs MQW amplifier, which is compared with calculations. The use of Fabry-Perot interferometer (FPI) structure in an optical amplifier is a useful way to increase the gain, but causes a problem of narrow operation bandwidth when the single-pass gain is low. Therefore, a single-pass gain above 2to 3 dB is a prerequisite to achieve both a high gain and moderate operation bandwidth in FPI-structured opticalamplifiers. We have designed an FPI-structured surface-normal optical amplifier both with a high gain of broad operation bandwidth of 4.6mm, when a single-pass gain is 3 dB.

• Proceedings of the Korean Vacuum Society Conference
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.196-196
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• 2012

Graphene, two-dimensional one-atom-thick planar sheet of carbon atoms densely packed in a honeycomb crystal lattice, has grabbled appreciable attention due to its extraordinary mechanical, thermal, electrical, and optical properties. Based on the graphene's high carrier mobility, high frequency graphene field effect transistors have been developed. Graphene is useful for photonic components as well as for the applications in electronic devices. Graphene's unique optical properties allowed us to develop ultra wide-bandwidth optical modulator, photo-detector, and broadband polarizer. Graphene can support SPP-like surface wave because it is considered as a two-dimensional metal-like systems. The SPPs are associated with the coupling between collective oscillation of free electrons in the metal and electromagnetic waves. The charged free carriers in the graphene contribute to support the surface waves at the graphene-dielectric interface by coupling to the electromagnetic wave. In addition, graphene can control the surface waves because its charge carrier density is tunable by means of a chemical doping method, varying the Fermi level by applying gate bias voltage, and/or applying magnetic field. As an extended application of graphene in photonics, we investigated the characteristics of the graphene-based plasmonic waveguide for optical signal transmission. The graphene strips embedded in a dielectric are served as a high-frequency optical signal guiding medium. The TM polarization wave is transmitted 6 mm-long graphene waveguide with the averaged extinction ratio of 19 dB at the telecom wavelength of $1.31{\mu}m$. 2.5 Gbps data transmission was successfully accomplished with the graphene waveguide. Based on these experimental results, we concluded that the graphene-based plasmonic waveguide can be exploited further for development of next-generation integrated photonic circuits on a chip.

• ETRI Journal
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• 제43권5호
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• pp.909-915
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• 2021

GaAs on Si grown via metalorganic chemical vapor deposition is demonstrated using various Si substrate thicknesses and three types of dislocation filter layers (DFLs). The bowing was used to measure wafer-scale characteristics. The surface morphology and electron channeling contrast imaging (ECCI) were used to analyze the material quality of GaAs films. Only 3-㎛ bowing was observed using the 725-㎛-thick Si substrate. The bowing shows similar levels among the samples with DFLs, indicating that the Si substrate thickness mostly determines the bowing. According to the surface morphology and ECCI results, the compressive strained indium gallium arsenide/GaAs DFLs show an atomically flat surface with a root mean square value of 1.288 nm and minimum threading dislocation density (TDD) value of 2.4×10⁷ cm^-2. For lattice-matched DFLs, the indium gallium phosphide/GaAs DFLs are more effective in reducing the TDD than aluminum gallium arsenide/GaAs DFLs. Finally, we found that the strained DFLs can block propagate TDD effectively. The strained DFLs on the 725-㎛-thick Si substrate can be used for the large-scale integration of GaAs on Si with less bowing and low TDD.

• Journal of the Korean Crystal Growth and Crystal Technology
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• 제22권1호
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• pp.11-14
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• 2012

The AlGaN layer has direct wide bandgaps ranging from 3.4 to 6.2 eV. Nowadays, it is becoming more important to fabricate optical devices in an UV region for the many applications. The high quality AlGaN layer is necessary to establish the UV optical devices. However, the growth of AlGaN layer on GaN layer is difficult due to the lattice mismatch and difference thermal expansion coefficient between GaN layer and AlGaN layer. In this paper, we attempted to grow the LED structure on GaN template by mixed-source HVPE method with multi-sliding boat system. We tried to find the optical and lattice transition of active layer by control the Al content in mixed-source. For the growth of epi layer, the HCl and $NH_3$ gas were flowed over the mixed-source and the carrier gas was $N_2$. The temperature of source zone and growth zone was stabled at 900 and $1090^{\circ}C$, respectively. After the growth, we performed the x-ray diffraction (XRD) and electro luminescence (EL) measurement.