• Journal of the Korean Vacuum Society
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• v.7 no.4
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• pp.328-333
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• 1998

Lattice-matched InAIAs epilayers were grown on (001) InP substrate by low pressure metalorganic chemical vapor deposition. The effects of growth conditions on the properties of InAIAs were analyzed, and InGaAs/InAIAs single and multiple quantum wells were successfully grown. It was observed that the optical property of InAIAs epilayers was improved in the temperature range of 620~$700^{\circ}C$ as the growth temperature increased due to the reduction of oxygen incorporation, however, the crystallinity decreased at temperatures higher than $750^{\circ}C$ due to the degraded crystallinity of the bufter layers. The enhanced incorporation of AI into epilayer was observed at high $AsH_3$flow rates and it was explained in terms of the differences in bond strengths of AI-As and In-As. The measured photoluminescence peak energies from InGaAs/InAIAs single quantum wells were consistent with the calculated ones based on transfer matrix method. High-order satellite peaks and fine thickness fringes were observed by high-resolution x-ray diffraction, implying that the high-quality multiple quantum wells with abrupt heterointerfaces were grown.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.304.1-304.1
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• 2014

Flat-panel displays have been growing as an essential everyday product in the current information/communication ages in the unprecedented speed. The forward-coming applications require light-weightness, higher speed, higher resolution, and lower power consumption, along with the relevant cost. Such specifications demand for a new concept-based materials and applications, unlike Si-based technologies, such as amorphous Si and polycrystalline Si thin film transistors. Since the introduction of the first concept on the oxide-based thin film transistors by Hosono et al., amorphous oxide thin film transistors have been gaining academic/industrial interest, owing to the facile synthesis and reproducible processing despite of a couple of shortcomings. The current work places its main emphasis on the binary oxides composed of ZnO and SnO2. RF sputtering was applied to the fabrication of amorphous oxide thin film devices, in the form of bottom-gated structures involving highly-doped Si wafers as gate materials and thermal oxide (SiO2) as gate dielectrics. The physical/chemical features were characterized using atomic force microscopy for surface morphology, spectroscopic ellipsometry for optical parameters, X-ray diffraction for crystallinity, and X-ray photoelectron spectroscopy for identification of chemical states. The combined characterizations on Zn-Sn-O thin films are discussed in comparison with the device performance based on thin film transistors involving Zn-Sn-O thin films as channel materials, with the aim to optimizing high-performance thin film transistors.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.280-280
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• 2014

We report the fabrication and electroluminescent characteristics of GaN/InxGa1-xN microdonut-shaped light-emitting diode (LED) microarrays as variable-color emitters. The diameter, width, height, and period of the GaN microdonuts were controlled by their growth parameters and the geometrical factors of the growth mask patterns. For the fabrication of microdonut LEDs, p-GaN/p-AlxGa1-xN/u-GaN/u-InxGa1-xN heteroepitaxial layers were coated on the entire surface of n-GaN microdonuts. The microdonut LED arrays showed strong light emission, which could be seen with the unaided eye under normal room illumination. Additionally, magnified optical images of microdonut LED arrays exhibited microdonut-shaped light emissions having spatially resolved blue and green colors. Their electroluminescence spectra had two dominant peaks at 460 and 560 nm. With increasing applied voltage, the intensity of the blue emission peak increased much faster than that of the green emission peak, indicating that the color of the LEDs is tunable. We also demonstrated that EL spectra of the devices could be controlled by changing the size of microdonut LEDs. What we want to emphasize here with the microdonut LEDs is that they have additional inner sidewall facets which did not exist for other typical three-dimensional structures including nanopyramids and nanorods, and that InxGa1-xN single quantum well formed on the inner sidewall facets had unique thickness and chemical composition, which generated additional EL color. The origin of the electroluminescence peaks was investigated by structural characterizations and chemical analyses.

• Polymer(Korea)
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• v.33 no.4
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• pp.333-341
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• 2009

Polypropylene (PP)/functionalized multiwalled carbon nanotube (F-MWNT) nanocomposites were prepared by using solution intercalation method with different F-MWNT loads. The PP composite films, which contain dodecanol-MWNT (DDO-MWNT) or dodecylamine-MWNT (DDA-MWNT) as reinforcing additive, were evaluated by thermomechanical properties, morphology, electrical conductivity and gas permeability. The images from electron microscopy (SEM and TEM) showed that F-MWNTs were homogeneously dispersed in PP matrix, while they were agglomerated in some other part. The addition of F-MWNT could improve thermomechanical properties of the films. The maximum enhancement was observed at 2 wt% F-MWNT. DDO-MWNT was more effective than DDA-MWNT for both tensile modulus and optical transparency of the films.

• Journal of the Korean Society for Heat Treatment
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• v.19 no.2
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• pp.96-102
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• 2006

Development of Rotation-Cylinder Method(RCM) is given for Mg-Al-Zn-X(X=Sr) alloys, identifying some of the key factors that need to be controlled and indicating subsequent casting processes. Effects of Sr addition on the microstructure and mechanical properties of as-cast and T6 heat-treated Mg-Al-Zn-X alloys fabricated by the RCM were investigated. The microstructural and mechanical characterizations were performed by utilizing optical microscope, scanning electron microscope, transmission electron microscope, hardness test and ultimate tensile test. The solution and aging treatment time was varied to optimize the T6 heat treatment conditions, and experimental results were discussed. The grain size of Sr containing alloys was refined by increasing Sr content, but the tensile and yield strengths were increased by addition up to 1wt% Sr.

• Clean Technology
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• v.19 no.2
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• pp.165-172
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• 2013

In this study, the hydrogen chloride removal using K-based dry sorbents ($K_2CO_3/Al_2O_3$, KEPRI, Korea) was studied with varying the pressure in a fixed bed reactor (15 cm tall bed with 0.5 cm I.d.). Working temperature was $400^{\circ}C$ and feed gas concentration was 750 ppm (HCl vol%, $N_2$ balance). The chloride sorption capacity of sorbent increases with increasing pressure (1, 5, 10, 15 and 20 bar). Also, after forming KCl crystal by reaction with $K_2CO_3$ and HCl, owing to the strong bonding energy, sorbent regeneration was practically impossible. Its optical, physical and chemical characterizations were evaluated by SEM, EDAX, BET, TGA and XRD. At $400^{\circ}C$ and 20 bar condition, working condition for the dehalogenation process after gasification, K-based dry sorbent showed high HCl sorption capacity and HCl/$N_2$ separation performances comparing with Ca-based and Mg-based dry sorbents.

• Journal of the Microelectronics and Packaging Society
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• v.6 no.1
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• pp.1-10
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• 1999

InGaP epilayers were grown on the flat, $2^{\circ}$off, $6^{\circ}$ off, and $10^{\circ}$off GaAs substrates by organo-metallic vapor phase epitaxy, and influences of crystallographic misorientation of the substrate on the structural and optical properties such as lattice mismatch, elastic strain, lattice curvature, misfit stress, and PL intensity /line-width were investigated in this study. Material characterizations were carried out by TXRD( tripple-axis x-ray diffractometer) and low temperature (11K) PL (photoluminescence). With increase of the substrate misorientation angle (S.M.A.), the relative incorporation of Ga atoms on the substrate surface was found to be enhanced. Also, with increase of the S. M. A., the x-ray line-width of the InGaP epilayer was reduced, indicating that the crystal quality of the epilayer could be improved tilth a misoriented substrate. It was also found that the elastic accommodation of the strain-free lattice misfit was more remarkable in a misoriented sample. PL intensity increased, and PL line-width and emission wavelength decreased with the increase of S. M. A. The results conclude that the elastic characteristics and the crystal quality of the InGaP epilayer could be remarkably enhanced when the misoriented substrates were employed.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.25 no.2
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• pp.45-50
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• 2015

Compositionally graded AlGaN epilayer was grown by HVPE (hydride vapor phase epitaxy) on (0001) c-plane sapphire substrate. During the growth of graded AlGaN epilayer, the temperatures of source and the growth zone were set at $950^{\circ}C$ and $1145^{\circ}C$, respectively. The growth rate of graded AlGaN epilayer was about 100 nm/hour. The changing of Al contentes was investigated by field emission scanning electron microscope (FE-SEM) and energy dispersive spectroscopy (EDS). From the result of atomic force microscope (AFM), the average of roughness in 2 inch substrate of graded AlGaN epilayer was a few nanometers scale. X-ray diffraction (XRD) with the result that the AlGaN (002) peak ($Al_{0.74}Ga_{0.26}N$) and AlN (002) peak were appeared. It seems that the graded AlGaN epilayer was successfully grown by the HVPE method. From these results, we expect to use of the graded AlGaN epilayer grown by HVPE for the application of electron and optical devices.

• Journal of Conservation Science
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• v.28 no.1
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• pp.53-62
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• 2012

The archival objects are tangible evidence related to the public service. They are unique and offer information representing the specific events, time or person. The archival objects as modern cultural heritage do not have the guideline to classify, manage and conserve them. Especially, it is difficult to apply general conservation process for burial artifacts, because there are few study example of conservation for metal archival objects and they have complex administrative value. We tried to find suitable material and application method for consolidation of copper alloy archival object. We choose three kinds of wax and acrylic resin for burial artifacts and had done comparative analysis of their characterizations following kinds and coating methods. As a result of evaluation by several surface analysis such as optical microscope, measuring film thickness, adhesive strength, contact angle and yellowing test, acrylic resin can use to archival objects of copper alloy, effectively but the method of heating after dip-coating with Wax B used before can get best effect of consolidation.

• Korean Chemical Engineering Research
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• v.45 no.5
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• pp.466-472
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• 2007

A technology platform for wafer-level three-dimensional integration circuits (3D-ICs) is presented, and that uses wafer bonding with low-k polymeric adhesives and Cu damascene inter-wafer interconnects. In this work, one of such technical platforms is explained and characterized using a test vehicle of inter-wafer 3D via-chain structures. Electrical and mechanical characterizations of the structure are performed using continuously connected 3D via-chains. Evaluation results of the wafer bonding, which is a necessary process for stacking the wafers and uses low-k dielectrics as polymeric adhesive, are also presented through the wafer bonding between a glass wafer and a silicon wafer. After wafer bonding, three evaluations are conducted; (1) the fraction of bonded area is measured through the optical inspection, (2) the qualitative bond strength test to inspect the separation of the bonded wafers is taken by a razor blade, and (3) the quantitative bond strength is measured by a four point bending. To date, benzocyclobutene (BCB), $Flare^{TM}$, methylsilsesquioxane (MSSQ) and parylene-N were considered as bonding adhesives. Of the candidates, BCB and $Flare^{TM}$ were determined as adhesives after screening tests. By comparing BCB and $Flare^{TM}$, it was deduced that BCB is better as a baseline adhesive. It was because although wafer pairs bonded using $Flare^{TM}$ has a higher bond strength than those using BCB, wafer pairs bonded using BCB is still higher than that at the interface between Cu and porous low-k interlevel dielectrics (ILD), indicating almost 100% of bonded area routinely.