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http://dx.doi.org/10.6111/JKCGCT.2015.25.2.045

Characterizations of graded AlGaN epilayer grown by HVPE  

Lee, Chanbin (Department of Electronic Material Engineering, Korea Maritime and Ocean University)
Jeon, Hunsoo (Department of Electronic Material Engineering, Korea Maritime and Ocean University)
Lee, Chanmi (Department of Electronic Material Engineering, Korea Maritime and Ocean University)
Jeon, Injun (Department of Electronic Material Engineering, Korea Maritime and Ocean University)
Yang, Min (Department of Electronic Material Engineering, Korea Maritime and Ocean University)
Yi, Sam Nyung (Department of Electronic Material Engineering, Korea Maritime and Ocean University)
Ahn, Hyung Soo (Department of Electronic Material Engineering, Korea Maritime and Ocean University)
Kim, Suck-Whan (Department of Physics, Andong National University)
Yu, Young Moon (LED-MCT R&BD Center, Pukyong National University)
Sawaki, Nobuhiko (Department of Electrical and Electronics Engineering, AIT)
Publication Information
Journal of the Korean Crystal Growth and Crystal Technology / v.25, no.2, 2015 , pp. 45-50 More about this Journal
Abstract
Compositionally graded AlGaN epilayer was grown by HVPE (hydride vapor phase epitaxy) on (0001) c-plane sapphire substrate. During the growth of graded AlGaN epilayer, the temperatures of source and the growth zone were set at $950^{\circ}C$ and $1145^{\circ}C$, respectively. The growth rate of graded AlGaN epilayer was about 100 nm/hour. The changing of Al contentes was investigated by field emission scanning electron microscope (FE-SEM) and energy dispersive spectroscopy (EDS). From the result of atomic force microscope (AFM), the average of roughness in 2 inch substrate of graded AlGaN epilayer was a few nanometers scale. X-ray diffraction (XRD) with the result that the AlGaN (002) peak ($Al_{0.74}Ga_{0.26}N$) and AlN (002) peak were appeared. It seems that the graded AlGaN epilayer was successfully grown by the HVPE method. From these results, we expect to use of the graded AlGaN epilayer grown by HVPE for the application of electron and optical devices.
Keywords
Graded AlGaN epilayer; FE-SEM; AFM; XRD; HVPE;
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Times Cited By KSCI : 2  (Citation Analysis)
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