• Title/Summary/Keyword: Optical characterizations

Search Result 70, Processing Time 0.027 seconds

Microstructure and wear performance of WC-6.5%Co cladding layer by electric resistance welding (저항 클래딩법에 의해 형성된 내마모성 WC-6.5Co 클래딩층의 미크로조직 및 내마모성능)

  • Lee, Jin-U;Bae, Myeong-Il;Kim, Sang-Jin;Lee, Yeong-Ho
    • Proceedings of the KWS Conference
    • /
    • 2006.10a
    • /
    • pp.120-122
    • /
    • 2006
  • This study deals with characterizations of microstructure and wear performance of a cladding layer, product on 1.9 mm-thick mild steel plate by the electric resistance welding, of composite metal powder of Coarse WC-6.5%Co and high carbon alloy(SHA). The cladding layer was examined and tested fur microstructural features, chemical composition, hardness, wear performance and wear mechanism. The cladding layer have two different matrix were observed by an optical microscope and EPMA. The one was the coarse WC-6.5Co structure. The other was the melted SHA with surrounding the WC-6.5Co structure. The hardness of WC-6.5Co was 1210HV. The hardness of SHA was 640HV. In comparison by wear rate, the cladding layer showed the remarkable wear performance that was 15 times of SM490 and about 62% of D2.

  • PDF

Material properties of In$_{0.53}$Ga$_{0.47}$As$_{0.52}$Al$_{0.48}$As MQWs grown on InP substrates by low-temperature molecular beam epitaxy (InP 기판위에 저온 분자선 에피탁시로 성장된 In$_{0.53}$Ga$_{0.47}$As$_{0.52}$Al$_{0.48}$As 다중 양자 우물의 특성 평가)

  • 이종수;최우영
    • Journal of the Korean Institute of Telematics and Electronics D
    • /
    • v.35D no.5
    • /
    • pp.80-86
    • /
    • 1998
  • Material characterizations were performed for In$_{0.53}Ga_{0.47}As/In$_{0.52}Al_{0.48}$/As MQWs grown on InP substrates by low-temperature modlecular beam epitaxy. MQW samples were grwon at different temperatures of 200.deg.C, 300.deg. C and 500.deg. C, and doped with 10$^{18}$ cm$^{3}$ Be. High resolution x-ray diffraction measurement showed the change in crystal qualities according to growth temperature. Hall measurement showed the changes in carrier concentrations and mobilities for different growth temperatures. The optical properties of MQW samples were investigated with photoluminescence and fourier-transform infrared spectroscopy measurements.

  • PDF

A brief review on graphene applications in rechargeable lithium ion battery electrode materials

  • Akbar, Sameen;Rehan, Muhammad;Liu, Haiyang;Rafique, Iqra;Akbar, Hurria
    • Carbon letters
    • /
    • v.28
    • /
    • pp.1-8
    • /
    • 2018
  • Graphene is a single atomic layer of carbon atoms, and has exceptional electrical, mechanical, and optical characteristics. It has been broadly utilized in the fields of material science, physics, chemistry, device fabrication, information, and biology. In this review paper, we briefly investigate the ideas, structure, characteristics, and fabrication techniques for graphene applications in lithium ion batteries (LIBs). In LIBs, a constant three-dimensional (3D) conductive system can adequately enhance the transportation of electrons and ions of the electrode material. The use of 3D graphene and graphene-expansion electrode materials can significantly upgrade LIBs characteristics to give higher electric conductivity, greater capacity, and good stability. This review demonstrates several recent advances in graphene-containing LIB electrode materials, and addresses probable trends into the future.

Improved Conductivity by Effective Wetting of Single Walled Carbon Nanotubes Film

  • Manivannan, S.;Ryu, Je-Hwang;Jeong, Il-Ok;Jang, Jin;Park, Kyu-Chang
    • 한국정보디스플레이학회:학술대회논문집
    • /
    • 2008.10a
    • /
    • pp.1598-1601
    • /
    • 2008
  • We describe the fabrication of transparent conducting single-walled carbon nanotubes (SWCNTs) film on flexible substrate following the conventional spin coating method. The fabricated film was post treated with diluted acid solution and its electrical and optical characterizations were performed. The electrical conductivity of SWCNTs film was enhanced and the film was found to be attached strongly with substrate after the post treatment.

  • PDF

Characterization of Microstructure of WC-6.5%Co Cladding Layer by Electric Resistance Welding (저항클래딩법을 응용하여 형성된 내마모성 WC-6.5Co 클래딩층의 미크로조직 특성)

  • Lee, Jin-Woo;Ko, Jun-Bin;Lee, Young-Ho
    • Journal of Welding and Joining
    • /
    • v.25 no.3
    • /
    • pp.72-77
    • /
    • 2007
  • This study deals with characterizations of microstructure and wear performance of a cladding layer, product on 1.9 mm-thick mild steel plate by the electric resistance welding, of composite metal powder of Coarse WC-6.5%Co and high carbon alloy (SHA). The cladding layer was examined and tested for microstructural features, chemical composition, hardness, and bondability. The cladding layer have two different matrix were observed by an optical microscope and EPMA. The one was the coarse WC-6.5Co structure. The other was the melted SHA with surrounding the WC-6.5Co structure. The hardness of WC-6.5Co was 1210HV. The hardness of SHA was 640HV.

Pyromellitic dianhydride as a cathode interfacial layer in the organic light emitting diodes: thickness optimization and its electroluminescent characteristics

  • Nam, Eun-Kyoung;Moon, Mi-Ran;Son, Dong-Jin;Park, Keun-Hee;Jung, Dong-Geun;Kim, Hyoung-Sub
    • 한국정보디스플레이학회:학술대회논문집
    • /
    • 2009.10a
    • /
    • pp.837-838
    • /
    • 2009
  • In this work, pyromellitic dianhydride (PMDA) was used as a cathode interfacial layer in the organic light emitting diodes (OLEDs) and its thickness was optimized. Various electrical and optical characterizations of the OLEDs having various thicknesses of the PMDA cathode interfacial layer revealed that the best OLED performance could be achieved by using 0.5 nm-thick PMDA layer compared to the control device without any interfacial layer.

  • PDF

DIAMOND-LIKE CARBON FILMS FOR ANTIREFLECTION COATINGS OF GERMANIUM INFRATED OPTICAL LENSES

  • Kim, Seong-Young;Lee, Sang-Hyun;Lee, Jai-Sung
    • Journal of the Korean institute of surface engineering
    • /
    • v.32 no.3
    • /
    • pp.461-466
    • /
    • 1999
  • Diamond-like carbon(DLC) films were directly deposited onto germanium(Ge) witness pieces and lenses by a capacitively coupled 13.56 MHz RF glow discharge plasma with $CH_4$ gas. The characterizations of DLC films were measured using a Raman and FTIR spectrometer. The configuration of Raman and FTIR spectra had a traditional shape. The IR transmittance was measured using an IR spectrophotometer. The maximum values of the IR transmission of Ge with the DLC/Ge/DLC, DLC/Ge/BBAR (broad band antireflection), DLC/Ge, and BBAR/Ge structures are 98%, 93%, 64%, and 63.5%, respectively, which come up to the theoretical values. The uniform DLC films were obtained by a rotation of the cathode at certain conditions.

  • PDF

Characterizations of i-a-Si:H and p-a-SiC:H Film using ICP-CVD Method to the Fabrication of Large-area Heterojunction Silicon Solar Cells

  • Jeong, Chae-Hwan;Jeon, Min-Sung;Kamisako, Koichi
    • Transactions on Electrical and Electronic Materials
    • /
    • v.9 no.2
    • /
    • pp.73-78
    • /
    • 2008
  • We investigated for comparison of large-area i-a-Si:H and p-a-SiC:H film quality like thickness uniformity, optical bandgap and surface roughness using both ICP-CVD and PECVD on the large-area substrate(diameter of 100 mm). As a whole, films using ICP-CVD could be achieved much uniform thickness and bandgap of that using PECVD. For i-a-Si:H films, its uniformity of thickness and optical bandgap were 2.8 % and 0.38 %, respectively. Also, thickness and optical bandgap of p-a-SiC:H films using ICP-CVD could be obtained at 1.8 % and 0.3 %, respectively. In case of surface roughness, average surface roughness (below 5 nm) of ICP-CVD film could be much better than that (below 30 nm) of PECVD film. HIT solar cell with 2 wt%-AZO/p-a-SiC:H/i-a-Si:H/c-Si/Ag structure was fabricated and characterized with diameter of 152.3 mm in this large-area ICP-CVD system. Conversion efficiency of 9.123 % was achieved with a practical area of $100\;mm\;{\times}\;100\;mm$, which can show the potential to fabrication of the large-area solar cell using ICP-CVD method.

Structural and Optical Characterizations of VO2 Film on Graphene/Sapphire Substrate by Post-annealing after Sputtering (그래핀/사파이어 기판상에 스퍼터링 후 열처리된 VO2박막의 구조 및 광학적 특성변화 연구)

  • Kim, Keun Soo;Kim, Hyeongkeun;Kim, Yena;Han, Seung-Ho;Bae, Dong Jae;Yang, Woo Seok
    • Journal of the Korean Vacuum Society
    • /
    • v.22 no.2
    • /
    • pp.98-104
    • /
    • 2013
  • $VO_2$ is an attractive thermochromic material, in which its electrical and optical properties can be switched by the structural phase-transition about $68^{\circ}C$. Recently, graphene is also a rising material which is researched as a transparent electrode because of its superior electrical and optical characteristics. In this respect, we try to fabricate the hybridized films using $VO_2$ and graphene on transparent sapphire substrate and then we investigate a structure and characterize an optical property for the samples as a function of temperature. According to the result of IR-transmittance analysis of $VO_2$ films as a function of temperature, the graphene-supported sapphire substrates are better about 10% than the bare sapphire substrates. The mean phase transition temperatures are also decreased as the number of graphene-layers increased and the hysteresis of phase transitions are narrowed.

Characterizations of GaN polarity controlled by substrate using the hydride vapor phase epitaxy (HVPE) technique (HVPE법으로 성장시킨 GaN 박막의 기판에 따른 극성 특성)

  • Oh, Dong-Keun;Lai, Van Thi Ha;Choi, Bong-Geun;Yi, Seong;Chung, Jin-Hyun;Lee, Seong-Kuk;Shim, Kwang-Bo
    • Journal of the Korean Crystal Growth and Crystal Technology
    • /
    • v.18 no.3
    • /
    • pp.97-100
    • /
    • 2008
  • Polar and non-polar GaN was grown by the HVPE on various substrates and influence of polarity has been investigated. The $10\;{\mu}m$ thickness GaN were grown by HVPE is along A-plane ($11{\bar{2}}0$), C-plane (0001) and M-Plane ($10{\bar{1}}0$) sapphire substrate respectively. Surface properties were observed by optical microscope and atomic force microscopy. High resolution X-ray diffraction (HR-XRD) confirms the wurtzite structure. The donor band exciton peak located at ${\sim}3.4\;eV$ and also located yellow luminescence peak at 2.2 eV. The polarity of the GaN film has a strong influence on the morphology and the optical properties.