• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.20 no.7
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• pp.6-13
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• 2006

Tin doped indium oxide(ITO) and Al doped zinc oxide(ZnO:Al) films, which are widely used as a transparent conductor in optoelectronic devices, were prepared by using the capacitively coupled DC magnetron sputtering method. ITO and ZnO:Al films with the optimum growth conditions showed each resistivity of $1.67{\times}10^{-3}[{\Omega}-cm],\;2.2{\times}10^{-3}[{\Omega}-cm]$ and transmittance of 89.61[%], 90.88[%] in the wavelength range of the visible spectrum. The two types of 5 inch-PDP cells with ZnO:Al and ITO transparent electrodes were made under the same manufacturing conditions. The PDP cell with ZnO:Al film was optimally operated in the mixing gas rate of Ne(base)-Xe(8[%]), and at gas pressure of 400[Torr]. It also shows the average measured brightness of $836[cd/m^2]$ at voltage range of $200{\sim}300$[V]. Luminous efficiency, one of the key parameter for high brightness and low power consumption, ranges from 1.2 to 1.6[lm/W] with increasing frequency of ac power supplier from 10 to 50[Khz]. The brightness and luminous efficiency are lower than those with ITO electrode by about 10[%]. However, these values are considered to be enough for the normal operation of PDP TV.

• Fire Science and Engineering
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• v.24 no.2
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• pp.82-88
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• 2010

In this study, we have performed several tests for composite plastic materials to be applied on interior materials of a vehicle to identify their combustion characteristics using cone calorimeter, smoke density chamber and toxicity index chamber. We have prepared a total of 12 samples for 4 major parts of a vehicle wherein each major part has 3 different materials. The results of cone calorimeter test showed ignition time of PVC sheet and PVC leather were 2s. The 8 samples showed under less than 10s of ignition time. The sample comprising Nylon and PE had the biggest maximum heat release rate of 635 $kW/m^2$. The sample comprising Rubber showed the smallest maximum heat release rate but with the biggest total heat release. The results of smoke density chamber test showed the sample that is made up with Rubber had the biggest specific optical smoke density. The sample comprising PVC leather and PUR showed the biggest VOF4 which enables the initial smoke production. The results of toxicity index test showed that all samples contained carbon dioxide content exceeding its lethal concentration. The sample comprising PVC showed high content of hydrogen chloride and hydrogen bromide. The PVC sheet showed the biggest toxicity index calculated by using lethal concentration and test results. Toxicity index of all sample wes over 1.

• Journal of the Korea Society of Computer and Information
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• v.18 no.3
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• pp.107-118
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• 2013

In this paper, we developed the semiconductor monitoring system for the etching process. Around the world, expert companies are competing fiercely since the semiconductor industry is a leading value-added industry that produces the essential components of electronic products. As a result, many researches have been conducted in order to improve the quality, productivity, and characteristics of semiconductor products. Process monitoring techniques has an important role to give an equivalent quality and productivity to produce semiconductor. In fact, since the etching process to form a semiconductor circuit causes great damage to the semiconductors, it is very necessary to develop a system for monitoring the process. The proposed monitoring system is mainly focused on the dry etching process using plasma and it provides the detailed observation, analysis and feedback to managers. It has the functionality of setting scenarios to match the process control automatically. In addition, it maximizes the efficiency of process automation. The result can be immediately reflected to the system since it performs real-time monitoring. UI (User Interface) provides managers with diagnosis of the current state in the process. The monitoring system has diverse functionalities to control the process according to the scenario written in advance, to stop the process efficiently and finally to increase production efficiency.

• Korean Journal of Optics and Photonics
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• v.19 no.1
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• pp.20-24
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• 2008

A color filter was proposed and demonstrated by incorporating a subwavelength patterned 1-dimensional grating in poly silicon. It was produced by employing the laser interference lithography method, providing much wider effective area compared to the conventional e-beam lithography. A $SiO_2$ layer was introduced on top of the silicon grating layer as a mask for the etching of the silicon, facilitating the etching of the silicon layer. It was theoretically found that the selectivity of the filter was also improved thanks to the oxide layer. The parameters for the designed device include the grating pitch of 450 nm, the grating height of 100 nm and the oxide-layer height of 200 nm. As for the fabricated filter, the spectral pass band corresponded to the blue color centered at 470 nm and the peak transmission was about 40%. Within the effective area of $3{\times}3mm^2$, the variation in the relative transmission efficiency and in the center wavelength was less than 10% and 2 nm respectively. Finally, the influence of the angle of the incident beam upon the transfer characteristics of the device was investigated in terms of the rate of the relative transmission efficiency, which was found to be equivalent to 1.5%/degree.

• Korean Journal of Optics and Photonics
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• v.17 no.3
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• pp.278-284
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• 2006

We have fabricated and measured electrooptic modulator using coupled stack InAs/InGaAs quantum dots. The height of the quantum dot is 16 nm and quantum dots are stacked including an InGaAs capping layer. The peak wavelength of photoluminescence is 1260 nm at room temperature and 1158 nm at 12 K. The operation characteristics of the quantum dots show high modulation efficiency of electrooptic modulator at 1550 nm compared to that of existing III-V bulk and MQW type semiconductor. The measured switching voltage ($V\pi$) is 540 and 600 mV, for TE mode and TM mode, respectively. From the results, the modulation efficiency can be determined as 333.3 and $300^{\circ}/V{\cdot}mm$ for TE and TM modes. The results reported here may lead to the design and fabrication of a novel electrooptic modulator with low switching voltage and high efficiency.

• Korean Journal of Optics and Photonics
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• v.17 no.3
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• pp.231-239
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• 2006

In recent years, a hierarchical security architecture has been widely studied because it can efficiently protect information by allowing an authorized user access to the level of information. However, the conventional hierarchical decryption methods require several decryption keys for the high level information. In this paper, we propose a hierarchical image encryption using random phase masks and Walsh code having orthogonal characteristics. To decrypt the hierarchical level images by only one decryption key, we combine Walsh code into the hierarchical level system. For encryption process, we first perform a Fourier transform for the multiplication results of the original image and the random phase mask, and then expand the transformed pattern to be the same size and shape of Walsh code. The expanded pattern is finally encrypted by multiplying with the Walsh code image and the binary phase mask. We generate several encryption images as the same encryption process. The reconstruction image is detected on a CCD plane by a despread process and Fourier transform for the multiplication result of encryption image and hierarchical decryption keys which are generated by Walsh code and binary random phase image. Computer simulations demonstrate that the proposed technique can decrypt hierarchical information by using only one level decryption key image and it has a good robustness to the data loss such as random cropping.

• Korean Journal of Optics and Photonics
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• v.16 no.3
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• pp.209-216
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• 2005

A new second generation advanced thermal imager, which can be used for battle tank sight has been developed by ADD. This system uses a $480\times6$ TDI HgCdTe detector, operating in the $7.7-10.3{\mu}m$ wavelength made by Sofradir. The IR optics has dual field of views such as $2.67\times2^{\circ}$ in NFOV and $10\times7.5^{\circ}$ in WFOV. And also, this optics is used for athermalization of the system. It is certain that our sensor can be used in wide temperature range without any degradation of the system performance. The scanning system to be able to display 470,000 pixels is developed so that the pixel number is greatly increased comparing with the first generation thermal imaging system. In order to correct non-uniformity of detector arrays, the two point correction method has been developed by using the thermo electric cooler. Additionally, to enhance the image of low contrast and improve the detection capability, we have proposed the new technique of histogram processing being suitable for the characteristics of contrast distribution of thermal imagery. Through these image processing techniques, we obtained the highest quality thermal image. The MRTD of the LWIR thermal sight shows good results below 0.05K at spatial frequency 2 cycles/mrad at the narrow field of view.

• Korean Journal of Optics and Photonics
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• v.16 no.3
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• pp.248-253
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• 2005

We designed and fabricated a compact multi-mode interference (MMI) wavelength demultiplexer using the concept of 'Improved Quasi-State' modes. The output power and extinction ratio were improved by utilizing modal phase error which is specially occurred in low-index contrast. For a designed demultiplexer, the mode propagation analysis with effective index approximation shows significant improvement of extinction ratio to -25 dB for both $1.31{\mu}m\;and\;1.51{\mu}m$ wavelength region and the split-length was reduced about 1/5 of other MMI devices. The fabricated device shows successful characteristics for both 1.31 and $1.55{\mu}m$ wavelengths. These results demonstrate the potential of low-index materials system and the embossing process for photonic integrated circuits.

• Korean Journal of Optics and Photonics
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• v.17 no.6
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• pp.556-563
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• 2006

We present a comprehensive study of a chirped pulse Ti:sapphire regenerative amplifier system operating at 1 kHz. Main constituents of the system are described in detail. The amplifier stage was first converted to a repetition rate-tunable kHz gain-switched nanosecond Ti:sapphire laser. Operation characteristics at different repetition rates such as build-up times of laser pulses, pump power-dependent output powers and pulse durations, damage thresholds, and tunability ranges were studied. Based on the results achieved, the switching time of the Pocket's cell used and the round trip numbers in the regenerative amplifier were optimized at 1 kHz. The output pulses with a pulse width of 50fs from a home-made Ken lens mode-locked Ti:sapphire oscillator were used as seed pulses. The pulses were expanded to 120ps in a grating stretcher prior to coupling into the 3-mirror amplifier cavity. After amplification and recompression, a stable 1kHz Ti:sapphire regenerative amplifier system, which delivers 85-fs, $320-{\mu}J$ pulses, was fully constructed.

• Korean Journal of Optics and Photonics
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• v.22 no.1
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• pp.23-29
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• 2011

Bistable chiral splay nematic liquid crystal display (BCSN LCD) is a memory type liquid crystal display using splay and $-\pi$ twist states as two stable states. When the cell thickness to pitch (d/p) ratio is 0.25, splay and $-\pi$ twist states have permanent memory time. However, when the transition from $-\pi$ twist state to splay state is caused by a fringe field, pixel regions show that the splay state is not perfect, but rather includes a contribution from the $-\pi$ twist state. In this paper, we propose a reflective BCSN LCD using $-\pi$ twist state in which the two stable states do not coexist. The fabricated reflective BCSN LC cell shows a high contrast ratio of over 30:1 and response times of 950 ms and 450 ms in vertical and fringe field switching, respectively. The proposed cell also shows wide viewing angle characteristics of $180^{\circ}$ in left- and right directions.