• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.36 no.6
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• pp.576-581
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• 2023

The Ga₂O₃ thin films were deposited using an RF sputtering system and the effect of crystallographic and optical properties under rapid thermal annealing conditions on Ga₂O₃ thin film was evaluated. A rapid thermal annealing method can fabricate a crystalline Ga₂O₃ thin film which is applied to various fields with a low cost and a high efficiency compared with the conventional post-annealing method. In this study, the Ga₂O₃ treated at 900℃ for 1 min showed the beta and gamma phases in XRD measurement. In optical properties, the crystalline Ga₂O₃ represented a high transmittance of more than 80% in the visible region and was calculated with a high optical bandgap energy of 4.58 eV. The beta and gamma phases Ga₂O₃ can be obtained by adjusting the rapid thermal annealing temperatures, and the various properties such as the optical bandgap energy can be controlled. Moreover, it is expected that crystalline Ga₂O₃ can be applied to various devices by controlling not only temperature but process time.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.141-141
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• 2012

The electronic and optical properties of Indium Zinc Tin Oxide (IZTO) thin films using gas environment were investigated by X-ray photoelectron spectroscopy (XPS) and reflection electron energy loss spectroscopy (REELS). REELS spectra revealed that the band gaps of IZTO thin films are 3.26, 3.07, and 3.46 eV for water mixed with oxygen, argon mixed with oxygen, and air environments, respectively. The measured band gaps by REELS are consistent with the optical band gaps obtained by UV-Spectrometer. The optical properties represented by the dielectric function $\mathfrak{m}$, the refractive index n, the extinction coefficient k, and the transmission coefficient T of the IZTO thin films with different gas environments were determined from a quantitative analysis of REELS spectra. The calculated transmission from quantitative analysis of REELS spectra shows good agreement with transmission measured by UV-spectrometer. The transmission values of 89% and low electrical resistivity of $3.55{\times}10^{-3}{\Omega}{\cdot}cm$ have been achieved for argon mixed with oxygen which indicates that the gas enviroment plays an important role in improving the electronic and optical properties of films.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.28 no.9
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• pp.607-614
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• 2015

To provide the clear images from the direct light on electrical board and display devices, anti glare treatment of display cover glass is needed. In this study, the effects of surface treatment temperature, concentration, and etching solution coating thickness of the gel phase on optical elements control such as gloss, haze of reflected light and transmittance, were investigated. Cover glasses were treated at different coating thickness and additive concentration. The optical properties were examined using spectrophotometer, gloss and haze meter. The surface morphology and roughness were measured by the optical microscope and Ra measuring instrument. The etching rate and surface morphologies were dramatically affected by the concentration of acid additive in the viscous gel because of re-crystallization of components in the etching solution, hydrogel formation and coagulant after coating on glass substrate. In our experimental range, cover glass which is surface-treated with various optical properties as well as the morphology uniformity was obtained; in particular, optical properties could be controlled by etching solution coating thickness of the gel phase and the concentration of additive. The gloss was depended on the surface roughness and it showed the linear relationship between optical transmittance and haze of reflected light, respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1998.06a
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• pp.97-99
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• 1998

A optical phase modulator of 5Gbps was fabricated on LiNbO$_3$ by Ti diffusion for optical communications. In this Paper the pigtailing, mode patterns and insertion loss were discussed. And the device Properties of driving voltage and bandwidth were measured.

• Transactions on Electrical and Electronic Materials
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• v.13 no.4
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• pp.185-187
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• 2012

Ga doped ZnO (GZO)/copper (Cu) bi-layered film was deposited on glass substrate by RF and DC magnetron sputtering and then the effect of the Cu bottom layer on the optical, electrical and structural properties of GZO films were considered. As-deposited 100 nm thick GZO films had an optical transmittance of 82% in the visible wavelength region and a sheet resistance of 4139 ${\Omega}/{\Box}$, while the GZO/Cu film had optical and electrical properties that were influenced by the Cu bottom layer. GZO films with 5 nm thick Cu film show the lower sheet resistance of 268 ${\Omega}/{\Box}$ and an optical transmittance of 65% due to increased optical absorption by the Cu metallic bottom layer. Based on the figure of merit, it can be concluded that the thin Cu bottom layer effectively increases the performance of GZO films as a transparent and conducting electrode without intentional substrate heating or a post deposition annealing process.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1996.05a
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• pp.68-71
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• 1996

In the study, the thermal and optical properties of SiO$_2$-PbO-K$_2$O-Al$_2$O$_3$ g1asses were investigated. According to Ga$_2$O$_3$ addictions, the properties of bulk glass, transition temperature and softening temperature were increased, whereas thermal expansion coefficient was decreased; In the optical properties, refractive index was increased, and IR cut-off wavelength was enlarged from 4.64$\mu\textrm{m}$ to 5.22$\mu\textrm{m}$. But, the optical loss of fiber was decreased.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.309-309
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• 2009

In-Ga-Zn-O (IGZO) has drawn much attention as a compatible material for transparent thin film transistors (TTFT) channel layer due to its high mobility and optical transparency at low processing temperatures. In this work, we investigated the effect of oxygen ambient on structural, electrical and optical properties of amorphous In-Ga-Zn-O (IGZO) thin films by using pulsed laser deposition (PLD). The films were deposited at various oxygen pressures and the structural, electrical and optical properties were investigated. X-ray diffraction (XRD) analysis showed that amorphous IGZO films were grown at all oxygen pressures. The surface morphology and optical properties with various oxygen pressures were studied by field emission scanning electron microscopy (FE-SEM) and UV-VIS spectroscopy, respectively. The grain boundary was observed more apparently and the calculated optical band gap became larger as oxygen pressure increased. To examine the electrical properties, Hall-effect measurements were carried out. The films showed high mobility.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.3
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• pp.269-276
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• 2009

Antimony doped tin oxide ($SnO_2:Sb$) films, which are used as the front contact and back reflector of thin film solar cells, have been deposited by d,c, magnetron sputtering. The dependence of electrical and optical properties of the films on the preparation conditions, such as $O_2$ gas ratio, substrate temperature, annealing temperature was investigated. The sputter gas composition was found to affect the properties of the films. With incorporating $O_2$ gas, the electrical and optical properties of films significantly were improved. The minimum resistivity and optical transmittance over 80 % in visible region were obtained at the oxygen concentration of 30 %, When the substrate temperature was higher, the resistivity of $SnO_2:Sb$ films was decreased, while the absorption edge shifted to shorter wavelength, indicating higher optical band gap. Heat treatment over $600^{\circ}C$ resulted in poorer electrical and optical properties due to SnO phase (102) plane.

• Transactions on Electrical and Electronic Materials
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• v.14 no.2
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• pp.82-85
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• 2013

This paper introduces 6,13-bis(triisopropylsilylethynyl) pentacene (TIPS pentacene) doped liquid crystal (LC) alignment properties on a rubbed polyimide (PI) layer as a function of the doping concentration of TIPS pentacene. Pretilt angles, photomicrographs, and electro-optical properties of TIPS pentacene doped LCs were comparable to those of pure LCs. However, TIPS pentacene in a LC medium supported twisted nematic-liquid crystal displays (TN-LCDs) to improve electro-optical properties. The threshold voltages observed in the TN cells decreased as the TIPS pentacene concentration increased. In addition, suitable response times were observed in TN cells.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.135-138
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• 2001

We report the structural ,optical and electrical properties of ZnO thin films depending on the variation of the film thickness. The properties of the films deposited on sapphire (001) substrates using a pulsed laser deposition technique (PLD) were characterized with XRD, hall measurement and photoluminescence (PL). In our study, the increase of the thickness of ZnO thin films shows the improvement of the structural and optical properties. The electric properties of the films were also well matched with the structural and optical properties