• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.19 no.4
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• pp.322-327
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• 2006

CdS films have been prepared on polycarbonate, polyethylene terephthalate, and Coming 7059 substrates by r.f magnetron sputtering technique at room temperature. A comparison of the properties of the films deposited on polymer and glass substrates was performed. In addition, the influence of the sputter power on the structural and optical properties of these films was evaluated. The XRD measurements revealed that CdS films were polycrystalline and retained the mixed structure of hexagonal wurtzite and cubic phase, regardless of substrate types. As the sputter power was increased from 75 to 150 Watt, the structure of CdS films was converted from the mixed of hexagonal and cubic phase to hexagonal phase. The morphology of CdS films is found to be continuous and dense. Also, the grain of CdS films is larger with increasing the sputter power. The average transmittance exceeded 80 % in the visible spectrum for all films and decreases slightly with the sputter power.

• Transactions on Electrical and Electronic Materials
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• v.10 no.5
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• pp.165-168
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• 2009

Transparent and conducting ITO/Cu/ITO multilayered films were deposited by magnetron sputtering on unheated polycarbonate (PC) substrates. The thickness of the Cu intermediate film was varied from 5 to 20 nm. Changes in the microstructure and optoelectrical properties of ITO/Cu/ITO films were investigated with respect to the thickness of the Cu intermediated layer. The optoelectrical properties of the films were significantly influenced by the thickness of the Cu interlayer. The sandwich structure of ITO 50 nm/Cu 5 nm/ITO 45 nm films had a sheet resistance of $36{\Omega}$/Sq. and an optical transmittance of 67% (contain substrate) at a wavelength of 550 nm, while the ITO 50 nm/Cu 20 nm/ITO 30 nm films had a sheet resistance of $70{\Omega}$/Sq. and an optical transmittance of 36%. The electrical and optical properties of ITO/Cu/ITO films were determined mainly by the Cu film properties. From the figure of merit, it is concluded that the ITO/Cu/ITO films with a 5 nm Cu interlayer showed the better performance in transparent conducting electrode applications than the conventional ITO films.

• Imaging Science in Dentistry
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• v.31 no.1
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• pp.17-22
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• 2001

Purpose: To compare the film density of Insight dental X-ray film (Eastman Kodak Co., Rochester, NY, USA) with that of Ektaspeed Plus film (Eastman Kodak) under manual and automatic processing conditions. Materials and Methods : Insight and Ektaspeed Plus films were exposed at three different exposure conditions with an aluminum step wedge on the films under the three different exposure times. The exposed films were processed by both manual and automatic ways. The Base plus fog density and the optical density made by exposing step wedge were calculated using a digital densitometer (model 07-443, Victoreen Inc, Cleveland, Ohio, USA). The optical densities of the Insight and Ektaspeed film versus thickness of alumimun wedge at the same exposure time were plotted on the graphs. Statistical analyses were applied for comparing the optical densities of the two films. Results: The film density of both Insight films and Ektaspeed Plus films under automatic processing condition was significantly higher over the manual processing. The film density of Insight films was significantly higher than that of Ektaspeed Plus films on both automatic and manual processing conditions. Conclusion: The radiation exposure time can be reduced when using Insight over Ektaspeed Plus film. To take the full advantage of reducing exposure time, Insight film should be processed automatically.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1997.11a
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• pp.30-33
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• 1997

In this paper, we studied the variation in optical constants of Te-doped G $e_{15}$ /$Sb_{85}$ thin films with 7800$\AA$ diode-laser exposing time and power. The reflectances were increased with the increase of laser exposure time and the laser power in all films. Also, the refractive indices of the films after exposing were higher than those of the as-deposited films. Thus, the fast crystallization was caused by addition to the more Te content at the lower lacer power. It was observed that the surface morphologies of the exposed films are higher than those of the as-deposited films by SEM analysis. Therefore, it is considered that the T $e_{0.5}$(G $e_{15}$ /$Sb_{85}$)$_{99.5}$ thin films will show the high contrast ratio and high SNR and have fast erasing time due to crystallization when these films is applied to optical recording materials.terials.s.

• Proceedings of the Materials Research Society of Korea Conference
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• 2003.11a
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• pp.131-131
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• 2003

The advent of photonic technologies in the field of communications and data transmission has been heavily increasing the demand in integrated optical (IO) circuits capable of accomplishing not only simple tasks like signal, but also more sophisticated functions like all-optical signal routing or active multiplexing/demultiplexing. In the last decade, sol-gel technology has been widely used to prepare optical materials. Sol-gel processes show many promises for the development of low-loss, high-performance glass integrated optical circuits. However, crack formation is likely to occur during heat treatment in thick gel films. In order to overcome the critical thickness limitation, the organic-modified silicate has been widely used. In this case coating matrices have been prepared from the organo-silanes of T structures, acidic catalyst and the as-prepared gel films have been heat-treated below 200$^{\circ}C$ to avoid the crack formation and the degradation of organic components. However, the films prepared in the acidic condition and the low heat temperature make the films contain high OH groups which is the major optical loss function. In this work, C$\sub$6/H$\sub$5/SiO$\sub$1.5/ films were prepared on silicon substrate by sol-gel method using base catalyst in a PTMS/NH$_4$OH/H$_2$O/C$_2$H$\sub$5/OH system. The sol showed spinable viscosity at 50 wt% of solid content, and neglectable viscosity change with time. The films were crack-free and transparent after curing at 450 $^{\circ}C$, and highly condensed to minimize OH content in C$\sub$6/H$\sub$5/SiO$\sub$1.5/ networks. The effects of heat treatment of the films are characterized on the critical thickness, the chemical composition and the refractive indices by means of SEM, FT-IR, TGA, prism coupler, respectively.

• Korean Journal of Optics and Photonics
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• v.11 no.3
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• pp.147-151
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• 2000

We deposited the ion assisted ${Ta_2}{O_5}$ films and conventional thermal evaporated ${Ta_2}{O_5}$ films by using electron beam gun, and measured the optical properties and mechanical properties of the fabricated films according to the evaporation conditions. In the case of the TazOs films by oxygen ion assisted deposition with the anode voltage of 120 V, and current density of $50~500\muA/cm^2$, the refractive index exhibited 2.15 which was higher than the conventionally deposited film index 1.94 and the tensile stress exhibited $5.0\times10^8 dyne/cm^2$ which was lower than $7.0\times10^8 dyne/cm^2$. This properties coincided with the optical and mechanical properties of the films deposited at the elevated substrate temperature of $230^{\circ}C$. In the case of the argon ion assisted films the tensile stress was decreased but the absorption existed at the short wavelength in the visible spectral region. And all the fabricated films were found to be amorphous by the X-ray diffraction analysis. lysis.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.25 no.12
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• pp.984-989
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• 2012

We have investigated the structural, electrical and optical properties of Ga-doped ZnO (GZO) thin films prepared by RF magnetron sputtering with laboratory-made ZnO targets containing 1, 3, 5, 7 wt% of $Ga_2O_3$ powder as a doping source. The GZO thin films show the typical crystallographic orientation with c-axis regardless of $Ga_2O_3$ content in the targets. The $3,000{\AA}$ thick GZO thin films with the lowest resistivity of $7{\times}10^{-4}{\Omega}{\cdot}cm$ are obtained by using the GZO ($Ga_2O_3$= 5 wt%) target. Optical transmittance of all films shows higher than 80% at the visible region. The optical energy band gap for GZO films increases as the carrier concentration ($n_e$) in the film increases.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.23 no.4
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• pp.280-286
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• 2010

We have investigated the influence of rapid thermal annealing (RTA) temperature on properties of Al-doped zinc oxide (AZO) thin films deposited on glass substrate by using radio-frequency magnetron sputtering. The RTA is performed in a nitrogen ambient in the temperature range from 300 to $600^{\circ}C$ for 1 minute in a rapid thermal annealer after growing the AZO thin films. The crystallographic structure and the surface morphology of AZO thin film are measured by using X-ray diffraction, and atomic force microscopy and scanning electron microscopy, respectively. The optical transmittance of the deposited thin films is examined in the wavelength range of 300-1100 nm, where the average transmittance is above the 90% in the visible and near-infrared regions. The optical bandgap is calculated from the Tauc's model, and it shows a significant dependence on the RTA temperature. As for the electrical properties of the thin films, the AZO thin film annealed at $400^{\circ}C$ shows the lowest electrical resistivity of $8.6{\times}10^{-3}{\Omega}cm$ and the Hall mobility of $11.3cm^2$/V-sec. These results suggest that the RTA temperature is an important parameter to influence on the structural, electrical, and optical properties of AZO thin films.

• Journal of the Korean Society for Heat Treatment
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• v.25 no.5
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• pp.244-248
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• 2012

ITO/$TiO_2$ films were deposited by RF magnetron sputtering on glass substrates and then the effect of vacuum annealing on the structural, optical and electrical properties of the films was investigated. The structural, optical and electrical properties are strongly related to annealing temperature. The films annealed at $300^{\circ}C$ showed a grain size of 40.9 nm, which was larger than as-deposited amorphous films. The optical transmittance in the visible wavelength region also increased, while the electrical resistivity decreased. The ITO/$TiO_2$ films annealed at $300^{\circ}C$ showed the highest optical transmittance of 81% and also showed the lowest electrical resistivity of $3.05{\times}10^{-4}{\Omega}cm$, in this study.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.14 no.12
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• pp.1008-1015
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• 2001

Thin films of vanadium oxide(VO$\_$x/) have been deposited by r.f. magnetron sputtering from V$_2$O$\_$5/ target in gas mixture of argon and oxygen. The oxygen/(oxygen+argon) partial pressure ratio is changed from 0% to 8%. Crystal structure, chemical composition, bonding, optical and electrical properties of films sputter-deposited under different oxygen gas pressures are characterized through XPS, AES, RBS, FTIR, optical absorption and electrical conductivity measurements. V$_2$O$\_$5/ and lower oxides co-exist in sputter-deposited films and as the oxygen partial pressure is increased the films become more stoichiometric V$_2$O$\_$5/. The increase of O/V ratio with increasing oxygen gas pressure is attributed to the partial filling of oxygen vacancies through diffusion. It is observed that the oxygen atoms located on the V-O plane of V$_2$O$\_$5/ layer participate more readily in the oxidation process. With increasing oxygen gas pressure indirect and direct optical band gaps are increased, but thermal activation energies are decreased.