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http://dx.doi.org/10.4313/JKEM.2012.25.12.984

Effects of Doping Concentration on the Properties of Ga-doped ZnO Thin Films Prepared by RF Magnetron Sputtering  

Kim, Hyoung Min (Department of Semiconductor Engineering, Gyeongsang National University)
Ma, Dae Young (Department of Electrical Engineering, Gyeongsang National University)
Park, Ki Cheol (Department of Semiconductor Engineering, Gyeongsang National University)
Publication Information
Journal of the Korean Institute of Electrical and Electronic Material Engineers / v.25, no.12, 2012 , pp. 984-989 More about this Journal
Abstract
We have investigated the structural, electrical and optical properties of Ga-doped ZnO (GZO) thin films prepared by RF magnetron sputtering with laboratory-made ZnO targets containing 1, 3, 5, 7 wt% of $Ga_2O_3$ powder as a doping source. The GZO thin films show the typical crystallographic orientation with c-axis regardless of $Ga_2O_3$ content in the targets. The $3,000{\AA}$ thick GZO thin films with the lowest resistivity of $7{\times}10^{-4}{\Omega}{\cdot}cm$ are obtained by using the GZO ($Ga_2O_3$= 5 wt%) target. Optical transmittance of all films shows higher than 80% at the visible region. The optical energy band gap for GZO films increases as the carrier concentration ($n_e$) in the film increases.
Keywords
Transparent conducting oxide (TCO); Ga doped ZnO (GZO); Hall effect; Optical transmittance;
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