• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.11 no.1
• /
• pp.57-61
• /
• 1998

In this study, PLZT stock solutions were prepared by Sol-Gel processing after the compositions were selected in the memory region of PLZT bulk phase diagram. PLZT solutions were deposited on the ITO glass substrate by spin-coating method. The thin films were annealed by rapid thermal processing. The electric characteristics, hysteresis loop, C-V characteristics of thin films in the memory region were measured in order to investigate the electrical characteristics of PLZT thin films. In selected compositions the decrease in Zr/Ti ratio led to an increase in dielectric constant and the decrease in remanent polarization and coercieve field which brought about slim hysteresis loop.

• Journal of the Korean Ceramic Society
• /
• v.37 no.1
• /
• pp.77-81
• /
• 2000

Silica glass films to utilize optical waveguides was fabricated by Aerosol Flame Deposition(AFD) method. As the amount of B2O3 increased in the sol solution of (92-x)SiO2-xB2O3-8P2O5, the thermophoretic deposition rate onto Si substrate was markedly lowered due to vaporizing out of B2O3 and P2O5 during the vaporization and reaction of the aerosol in the flame. GeO2 was added to 62SiO2-30B2O3-8P2O5 in order to control easily the refractive index of glass films. As the amount of GeO2 increased from 2 to 12 wt%, its refractive index increased from 1.4633 up to 1.4716.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 1997.11a
• /
• pp.339-342
• /
• 1997

The optical properties of WO$_3$thin films deposited by RF magnetron reactive sputtering were studied. The substrate was an ITO(indium-tin-oxide) glass(100$\Omega$/ ). The optical properties are examined by different deposition conditions. RF power, substrate temperature, $O_2$concentraction. Ar flow rate, working pressure and thickness are 40~60W, 25~30$0^{\circ}C$, 10%, 54~72sccm, 5~20m7orr and 1200~2400$\AA$, respectively. All these films were colorless, light yellow and found to be amorphous in structure by X-ray diffraction analysis. When RF power, substrate temperature, $O_2$concentraction, Ar flow rate, working pressure and thickness are 40W, $25^{\circ}C$, 10%, 72sccm, 20mTorr and 2400$\AA$, respectively the values of transmittance of the WO$_3$thin films in visible region are about 80%.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 1990.10a
• /
• pp.39-44
• /
• 1990

Polycrystalline CdS films were grown on glass substrate with conducting indium tin oxide(ITO) by electrodeposition. The average size of the plate-shape grains o the CdS films was from 0.3um to 0.05um, and the adhesion to ITO was excellent. The optical band gap of the electrodeposited CdS films was in the range from 2.51eV to 2.68 eV. The optical transmittance was 80% and the electrical resistivity varied from 10$^3$ to 10$\^$5/$\Omega$-cm depending on the deposition condition.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2004.07a
• /
• pp.276-279
• /
• 2004

CdS thin films on polymer substrates such as polycarbonate(PC) and polyethylene terephthalat(PET) have many merits such as light weight, small volume and can make the obtained devices folded, easily carried. In present work, CdS thin films on glass, PC, and PET substrates have been prepared by chemical bath deposition. The structural and optical propertied of the films depending on substrate types have been investigated.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2005.07a
• /
• pp.109-110
• /
• 2005

Cadmium sulphide (CdS) films have been prepared on polycarbonate (PC), polyethylene terephthalate (PET), and Coming 7059 substrates by r.f. magnetron sputtering technique at room temperature. A comparison of the properties of the films deposited on polymer and glass substrates was performed. In addition, the influence of the sputter power on the structural and optical properties of these films was evaluated.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2005.07a
• /
• pp.205-206
• /
• 2005

PRAM (Phase change Random Access Memory) is one of the most promising candidates for next generation Non-volatile Memories. The Phase change material has been researched in the field of optical data storage media. Among the phase change materials, $Ge_2Sb_2Te_5$(GST) is very well known for its high optical contrast in the state of amorphous and crystalline. However, the characteristics required in solid state memory are quite different from optical ones. In this study, the structural properties of GST thin films with bottom electrode were investigated for PRAM. The 100-nm thick GST films were deposited on TiN/Si and TiAlN/Si substrates by RF sputtering system. In order to characterize the crystal structure and morphology of these films, we performed x-ray diffraction (XRD) and atomic force microscopy (AFM).

• Bulletin of the Korean Chemical Society
• /
• v.22 no.12
• /
• pp.1366-1370
• /
• 2001

Thin films of the SiO2-TiO2-PDMS composite material have been prepared by the sol-gel dip coating method. Acid catalyzed solutions of tetraethoxy silane (TEOS) and polydimethyl siloxane (PDMS) mixed with titanium isopropoxide Ti(OiPr) were used as precursors. The optical and structural properties of the organically modified 70SiO2-30TiO2 composite films have been investigated with Fourier Transform Infrared Spectroscopy (FT-IR), UV-Visible Spectroscopy (UV-Vis), Differential Thermal Analysis (DTA) and prism coupling technique. The films coated on the soda-lime-silicate glass exhibit 450-750 nm thickness, 1.56-1.68 refractive index and 88-94% transmittance depending on the experimental parameters such as amount of PDMS, thermal treatment and heating rate. The optical loss of prepared composite film was measured to be about 0.34 dB/cm.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2012.08a
• /
• pp.141-141
• /
• 2012

The electronic and optical properties of Indium Zinc Tin Oxide (IZTO) thin films using gas environment were investigated by X-ray photoelectron spectroscopy (XPS) and reflection electron energy loss spectroscopy (REELS). REELS spectra revealed that the band gaps of IZTO thin films are 3.26, 3.07, and 3.46 eV for water mixed with oxygen, argon mixed with oxygen, and air environments, respectively. The measured band gaps by REELS are consistent with the optical band gaps obtained by UV-Spectrometer. The optical properties represented by the dielectric function $\mathfrak{m}$, the refractive index n, the extinction coefficient k, and the transmission coefficient T of the IZTO thin films with different gas environments were determined from a quantitative analysis of REELS spectra. The calculated transmission from quantitative analysis of REELS spectra shows good agreement with transmission measured by UV-spectrometer. The transmission values of 89% and low electrical resistivity of $3.55{\times}10^{-3}{\Omega}{\cdot}cm$ have been achieved for argon mixed with oxygen which indicates that the gas enviroment plays an important role in improving the electronic and optical properties of films.

• Transactions on Electrical and Electronic Materials
• /
• v.14 no.5
• /
• pp.242-245
• /
• 2013

Sn-doped $In_2O_3$ (ITO) thin films were prepared by radio frequency magnetron sputtering without intentional substrate heating on bare glass and $TiO_2$-deposited glass substrates to investigate the effect of a $TiO_2$ buffer layer on the electrical and optical properties of ITO films. The thicknesses of $TiO_2$ and ITO films were kept constant at 5 and 100 nm, respectively. As-deposited ITO single layer films show an optical transmittance of 75.9%, while $ITO/TiO_2$ bi-layered films show a lower transmittance of 76.1%. However, as-deposited $ITO/TiO_2$ films show a lower resistivity ($9.87{\times}10^{-4}{\Omega}cm$) than that of ITO single layer films. In addition, the work function of the ITO film is affected by the $TiO_2$ buffer layer, with the $ITO/TiO_2$ films having a higher work-function (5.0 eV) than that of the ITO single layer films. The experimental results indicate that a 5-nm-thick $TiO_2$ buffer layer on the $ITO/TiO_2$ films results in better performance than conventional ITO single layer films.