• The Journal of the Petrological Society of Korea
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• v.10 no.3
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• pp.202-211
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• 2001

Luminescence is a physical phenomenon exhibited by many non-conducting, crystalline materials, such as quartz and feldspar. Within the crystals, energy absorbed from ionising radiation frees electrons to move through the crystal lattice and some are trapped at defects in the lattice. Observable luminescence is produced by electrons, released from traps by stimulation by absorption of light, which recombine with lattice defects which act as luminescence centers - optically stimulated luminescence (OSL). In a similar way to thermoluminescence(TL) dating, controlled measurement of the OSL signal can provide a means of determining the time since the last exposure of a layer of sediment to sunlight, the age of the sediment. However, whereas in the thermoluminescence dating of sediment only part of the latent thermoluminescence signal is bleached by sunlight as the sediment is deposited and allowance must be made during the laboratory measurements for the light insensitive component, optically induced luminescence dating has the advantage of working only with light sensitive traps in the crystal. Determination of the time since deposition of Quaternary sediment samples from the OSL of quartz grains using blue light was performed. A series of experiments and recent developments relating OSL dating are described, beginning by identifying the features which make OSL signals suitable for the development of dating method. Additionally, there are suggestions as to future research for obtaining reliable ages and a comment on current best practice on procedures, with the dating results of Quaternary sediment.

• Journal of Sensor Science and Technology
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• v.23 no.1
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• pp.51-57
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• 2014

The evaporating materials for $MgGa_2Se_4$ single crystal thin films was prepared from horizontal electric furnace. To obtain the single crystal thin films, $MgGa_2Se_4$ compounded polycrystal powder was deposited on thoroughly etched semi-insulated GaAs(100) substrate by the hot wall epitaxy (HWE) method system. The source and substrate temperatures of optimized growth conditions, were $610^{\circ}C$ and $400^{\circ}C$, respectively.The source and substrate temperatures were $610^{\circ}C$ and $400^{\circ}C$, respectively. The crystalline structure of the single crystal thin films was investigated by double crystal X-ray diffraction (DCXD). The temperature dependence of the energy band gap of the $MgGa_2Se_4$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)=2.34\;eV-(8.81{\times}10^{-4}\;eV/K)T^2/(T+251\;K)$. After the as-grown $MgGa_2Se_4$ single crystal thin films was annealed in Mg-, Se-, and Ga-atmospheres, the origin of point defects of $MgGa_2Se_4$ single crystal thin films has been investigated by the photoluminescence (PL) at 10 K. The native defects of $V_{Mg}$, $V_{Se}$ obtained by PL measurements were classified as a donors or acceptors type. And we concluded that the heat-treatment in the Se-atmosphere converted $MgGa_2Se_4$ single crystal thin films to an optical n-type. Also, we confirmed that Ga in $MgGa_2Se_4$/GaAs did not form the native defects because Ga in $MgGa_2Se_4$ single crystal thin films existed in the form of stable bonds.

• Journal of the Korean Society for Nondestructive Testing
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• v.25 no.2
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• pp.117-126
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• 2005

A stoichiometric mixture of evaporating materials for $AgGaS_2$ single crystal thin films was prepared from horizontal electric furnace. To obtain the single crystal thin films, $AgGaS_2$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the hot wall epitaxy (HWE) system. The source and substrate temperatures were $590^{\circ}C\;and\;440^{\circ}C$, respectively The temperature dependence of the energy band gap of the $AgGaS_2$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)=2.7284 eV-(8.695{\times}10^{-4}eV/K)T^2/T(T+332K)$. After the as-grown $AgGaS_2$, single crystal thin films was annealed in Ag-, S-, and Ga-atmospheres, the origin of point defects of $AgGaS_2$ single crystal thin films has been investigated by the photoluminescence(PL) at 10K. The native defects of $V_{Ag},\;V_s,\;Ag_{int},\;and\;S_{int}$, obtained by PL measurements were classified as a donors or acceptors type. And we concluded that the heat-treatment in the Ag-atmosphere converted $AgGaS_2$ single crystal thin films to an optical n-type. Also, we confirmed that Ga in $AgGaS_2$ crystal thin films did not form the native defects because Ga in $AgGaS_2$ single crystal thin films existed in the form of stable bonds.

• The Bulletin of The Korean Astronomical Society
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• v.43 no.1
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• pp.34.2-35
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• 2018

Galaxy transition from star-forming to quiescent, accompanied with morphology transformation, is one of the key unresolved issues in extragalactic astronomy. Although several environmental mechanisms have been proposed, a deeper understanding of the impact of environment on galaxy transition still requires much exploration. My Ph.D. thesis focuses on which environmental mechanisms are primarily responsible for galaxy transition in different environments and looks at what happens during the transition phase using multi-wavelength photometric/spectroscopic data, from UV to mid-infrared (MIR), derived from several large surveys (GALEX, SDSS, and WISE) and our GMOS-North IFU observations. Our multi-wavelength approach provides new insights into the *late* stages of galaxy transition with a definition of the MIR green valley different from the optical green valley. I will present highlights from three areas in my thesis. First, through an in-depth study of environmental dependence of various properties of galaxies in a nearby supercluster A2199 (Lee et al. 2015), we found that the star formation of galaxies is quenched before the galaxies enter the MIR green valley, which is driven mainly by strangulation. Then, the morphological transformation from late- to early-type galaxies occurs in the MIR green valley. The main environmental mechanisms for the morphological transformation are galaxy-galaxy mergers and interactions that are likely to happen in high-density regions such as galaxy groups/clusters. After the transformation, early-type MIR green valley galaxies keep the memory of their last star formation for several Gyr until they move on to the next stage for completely quiescent galaxies. Second, compact groups (CGs) of galaxies are the most favorable environments for galaxy interactions. We studied MIR properties of galaxies in CGs and their environmental dependence (Lee et al. 2017), using a sample of 670 CGs identified using a friends-of-friends algorithms. We found that MIR [3.4]-[12] colors of CG galaxies are, on average, bluer than those of cluster galaxies. As CGs are located in denser regions, they tend to have larger early-type galaxy fractions and bluer MIR color galaxies. These trends can also be seen for neighboring galaxies around CGs. However, CG members always have larger early-type fractions and bluer MIR colors than their neighboring galaxies. These results suggest that galaxy evolution is faster in CGs than in other environments and that CGs are likely to be the best place for pre-processing. Third, post-starburst galaxies (PSBs) are an ideal laboratory to investigate the details of the transition phase. Their spectra reveal a phase of vigorous star formation activity, which is abruptly ended within the last 1 Gyr. Numerical simulations predict that the starburst, and thus the current A-type stellar population, should be localized within the galaxy's center (< kpc). Yet our GMOS IFU observations show otherwise; all five PSBs in our sample have Hdelta absorption line profiles that extend well beyond the central kpc. Most interestingly, we found a negative correlation between the Hdelta gradient slopes and the fractions of the stellar mass produced during the starburst, suggesting that stronger starbursts are more centrally-concentrated. I will discuss the results in relation with the origin of PSBs.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.38 no.10
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• pp.671-677
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• 2001

A RuO$_2$ Schottky photo-detector was designed and fabricated with GaN layers on the sapphire substrate. For good absorption of UV light, an epitaxial structure with undoped GaN(0.5 ${\mu}{\textrm}{m}$)/n￣-GaN(0.1${\mu}{\textrm}{m}$)/n＋-GaN(1.5${\mu}{\textrm}{m}$) was grown by MOCVD. The structure had the carrier concentrations of 3.8$\times$10$^{18}$ cm￣$^3$, the mobility of 283$\textrm{cm}^2$/V.s. After ECR etching process for mesa structure with the diameter of about 500${\mu}{\textrm}{m}$, Al ohmic contact was formed on GaN layer. After proper passivation between the contacts with Si$_3$/N$_4$, was formed on undoped GaN layer. The fabricated Schottky diode had a specific contact resistance of 1.15$\times$10$^{-5}$ ［$\Omega$.$\textrm{cm}^2$］. It has a low leakage current of 305 pA at -5 V, which was attributed by stable characteristics of RuO$_2$ Schottky contact. In optical measurement, it showed the high UV to visible extinction ratio of 10$^{5}$ and very high responsivity of 0.23 A/W at the wavelength of 365nm.

• Analytical Science and Technology
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• v.27 no.6
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• pp.352-356
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• 2014

Various studies have been done to improve the properties of the steel by adding boron to the steel. Some studies have reported on the analysis of the boron in steel by AAS (atomic absorption spectrometry), ICP-OES(inductively coupled plasma-optical emission spectrometry), ICP-MS (inductively coupled plasma/mass spectrometry). The volatile loss of boron of steel in sample digestion and the separation procedure for avoiding matrix effect by high concentration of iron are difficulties for determination of boron in steel. The method to determine boron in steel by ICP-MS was developed without volatilization of boron in sample digestion step with $HNO_3-NH_4HF_2$ digestion method, and the additional separation process for avoiding matrix effect. Complete decomposition of steel with $HNO_3-NH_4HF_2$ digestion method, and boron determination by ICP-MS in the matrix of high concentration of iron were possible. Quantitative recoveries of boron in certified standard steel by new method in this study were 103 to 111%, and the relative standard deviation is less than 5%. The method detection limit was $1.17{\mu}g/g$.

• Proceedings of the Korea Technical Association of the Pulp and Paper Industry Conference
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• 2006.06b
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• pp.231-237
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• 2006

Grease barrier food containers are commonly used for packaging of fast food, cooked food, and food in general. Greaseproofing is also used for certificate paper and label paper etc. Different pulp raw materials, due to their different fiber morphology and chemical compositions, produce papers of varying characteristics. We used optical photomicroscopy and fiber analysis data to evaluate fiber morphology and traits under various beating conditions in order to understand which pulp raw materials produced superior greaseproofing property when a fluorinated greaseproofing agent was added internally. The experiment studied 9 species of pulps, including 2 softwood (northern pine and radiata pine) bleached kraft pulps which were beaten to 550 and 350 mL CSF, respectively; 3 hardwoods (eucalypts, acacia, mixed Indonesian hardwoods) bleached kraft pulps which were beaten to 450 and 250 mL CSF, respectively; and nonwood fibers of reed, bagasse, and abaca. A fluorinated greaseproofing chemical at 0.12% dosage with respect to dry pulp was added to each pulp preparation and formed handsheets. A total of 67 sets of handsheets were prepared, and their basis weights, thickness, bulks, opacities, wet opacities, air resistance, water absorption and degrees of greaseproofing were measured for an overall evaluation of pulp and freeness on greaseproofing papers. The experimental fiber length, coarseness and distribution characteristics and the greaseproofing results suggest that softwood pulps (radiate pine > northern pine) were superior to hardwood pulps (eucalypts > acacia > mixed Indonesian hardwoods). The unbeaten pulps gave papers with high porosities and nearly devoid of greaseproofing property. Greaseproofing is proportional to air resistance. Among the nonwood fibers, bagasse had the best greaseproofing property, followed by reed and abaca was the poorest. With regards to waterproofing property, hardwood pulps (mixed Indonesian hardwoods > acacia > eucalypts) were better than softwood pulps (northern pine > radiate pine). Among the Nonwood fibers, reed had the highest waterproofing property, and it was followed by abaca, while bagasse had the poorest waterproofing characteristic. In summary, bleached kraft northern pine, eucalypts and reed pulps were best suited for making greaseproofing papers, Freeness of the pulps should be kept at $200{\sim}280mL$ CSF for optimal performance.

• Applied Biological Chemistry
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• v.18 no.4
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• pp.183-187
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• 1975

The content of total and individual anthocyanins in the wild vines (Vitis amurensis Ruprecht), which were wildly grown in the mountain area of Korea, has been carried out. The pigments were extracted with 0.1% hydrochloric acid in methanol from the wild vines and the content of the total anthocyanin in the extract was determined spectrophotometrically at 538nm $({\lambda}max.)$. Individual anthocyanins in the extract were separated by paper chromatography and eluted with 0.1% HCl in methanol. The optical densities of the individual pigment solutions were determined at each absorption maxima of the pigments. The content of total anthocyanins in wild vines was 3.95mg per 1g fresh weight. The content of individual pigments were as follows: 12.5% delphinidin 3-monoglucoside. 3,5 % petunidin 3-monoglucoside, 2.1% cyanidin 3-monoglucoside, 10.1% delphinidin 3,5-diglucoside, 4.3% malvidin 3-monoglucoside, 8.3% petunidin 3,5-diglucoside, 4.1% cyanidin 3,5-diglucoside like and 55.1% malvidin 3,5-diglucoside. It was found that the most abundant pigment in wild vines studied was malvidin-3,5-diglucoside.

• Korean Journal of Materials Research
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• v.18 no.6
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• pp.339-346
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• 2008

Single-crystal $ZnIn_2S_4$ layers were grown on a thoroughly etched semi-insulating GaAs (100) substrate at $450^{\circ}C$ with a hot wall epitaxy (HWE) system by evaporating a $ZnIn_2S_4$ source at $610^{\circ}C$. The crystalline structures of the single-crystal thin films were investigated via the photoluminescence (PL) and Double-crystal X-ray rocking curve (DCRC). The temperature dependence of the energy band gap of the $ZnIn_2S_4$ obtained from the absorption spectra was well described by Varshni's relationship, $E_g(T)=2.9514\;eV-(7.24{\times}10^{-4}\;eV/K)T2/(T＋489K)$. After the as-grown $ZnIn_2S_4$ single-crystal thin films was annealed in Zn-, S-, and In-atmospheres, the origin-of-point defects of the $ZnIn_2S_4$ single-crystal thin films were investigated via the photoluminescence (PL) at 10 K. The native defects of $V_{Zn}$, $V_S$, $Zn_{int}$, and $S_{int}$ obtained from the PL measurements were classified as donor or acceptor types. Additionally, it was concluded that a heat treatment in an S-atmosphere converted $ZnIn_2S_4$ single crystal thin films into optical p-type films. Moreover, it was confirmed that In in $ZnIn_2S_4$/GaAs did not form a native defects, as In in $ZnIn_2S_4$ single-crystal thin films existed in the form of stable bonds.

• Korean Journal of Materials Research
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• v.23 no.3
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• pp.155-160
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• 2013

ZnO thin films co-doped with Mg and Ga (MxGyZzO, x + y + z = 1, x = 0.05, y = 0.02 and z = 0.93) were prepared on glass substrates by RF magnetron sputtering with different sputtering powers ranging from 100W to 200W at a substrate temperature of $350^{\circ}C$. The effects of the sputtering power on the structural, morphological, electrical, and optical properties of MGZO thin films were investigated. The X-ray diffraction patterns showed that all the MGZO thin films were grown as a hexagonal wurtzite phase with the preferred orientation on the c-axis without secondary phases such as MgO, $Ga_2O_3$, or $ZnGa_2O_4$. The intensity of the diffraction peak from the (0002) plane of the MGZO thin films was enhanced as the sputtering power increased. The (0002) peak positions of the MGZO thin films was shifted toward, a high diffraction angle as the sputtering power increased. Cross-sectional field emission scanning electron microscopy images of the MGZO thin films showed that all of these films had a columnar structure and their thickness increased with an increase in the sputtering power. MGZO thin film deposited at the sputtering power of 200W showed the best electrical characteristics in terms of the carrier concentration ($4.71{\times}10^{20}cm^{-3}$), charge carrier mobility ($10.2cm^2V^{-1}s^{-1}$) and a minimum resistivity ($1.3{\times}10^{-3}{\Omega}cm$). A UV-visible spectroscopy assessment showed that the MGZO thin films had high transmittance of more than 80 % in the visible region and that the absorption edges of MGZO thin films were very sharp and shifted toward the higher wavelength side, from 270 nm to 340 nm, with an increase in the sputtering power. The band-gap energy of MGZO thin films was widened from 3.74 eV to 3.92 eV with the change in the sputtering power.