• 제목/요약/키워드: Operational transconductance amplifier

검색결과 64건 처리시간 0.025초

전류- 제어 CMOS operational transconductance amplifier (A Current-controlled CMOS operational transconductance amplifier)

  • 정원섭;차형우;김홍배;노승룡
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 1988년도 전기.전자공학 학술대회 논문집
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    • pp.563-566
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    • 1988
  • A current-controlled CMOS operational transconductance amplifier(OTA), whose transconductance is directly proportional to the DC bias current, has been developed for many electronic circuit applications. It features that its transconductance is insensitive to temperature unlike that of the bipolar OTA. This property makes it possible to use the proposed OTA as a basic buliding block in electrically variable circuit design. The SPICE simulation shows that the conversion sensitivity of the circuit is 44.62 mv /${\mu}A$ and the linearity error less than 0.54 % over a bias current range from 2 ${\mu}A$ to 120 ${\mu}A$ when the output is loaded with a 1${\Omega}$ resistor.

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A Power-Efficient CMOS Adaptive Biasing Operational Transconductance Amplifier

  • Torfifard, Jafar;A'ain, Abu Khari Bin
    • ETRI Journal
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    • 제35권2호
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    • pp.226-233
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    • 2013
  • This paper presents a two-stage power-efficient class-AB operational transconductance amplifier (OTA) based on an adaptive biasing circuit suited to low-power dissipation and low-voltage operation. The OTA shows significant improvements in driving capability and power dissipation owing to the novel adaptive biasing circuit. The OTA dissipates only $0.4{\mu}W$ from a supply voltage of ${\pm}0.6V$ and exhibits excellent high driving, which results in a slew rate improvement of more than 250 times that of the conventional class-AB amplifier. The design is fabricated using $0.18-{\mu}m$ CMOS technology.

Field programmable analog arrays for implementation of generalized nth-order operational transconductance amplifier-C elliptic filters

  • Diab, Maha S.;Mahmoud, Soliman A.
    • ETRI Journal
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    • 제42권4호
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    • pp.534-548
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    • 2020
  • This study presents a new architecture for a field programmable analog array (FPAA) for use in low-frequency applications, and a generalized circuit realization method for the implementation of nth-order elliptic filters. The proposed designs of both the FPAA and elliptic filters are based on the operational transconductance amplifier (OTA) used in implementing OTA-C filters for biopotential signal processing. The proposed FPAA architecture has a flexible, expandable structure with direct connections between configurable analog blocks (CABs) that eliminates the use of switches. The generalized elliptic filter circuit realization provides a simplified, direct synthetic method for an OTA-C symmetric balanced structure for even/odd-nth-order low-pass filters (LPFs) and notch filters with minimum number of components, using grounded capacitors. The filters are mapped on the FPAA, and both architectures are validated with simulations in LTspice using 90-nm complementary metal-oxide semiconductor (CMOS) technology. Both proposed FPAA and filters generalized synthetic method achieve simple, flexible, low-power designs for implementation of biopotential signal processing systems.

지능형 저항성 변환기를 위한 간단한 브리지 저항 편차-주파수 변환기 (A Simple Bridge Resistance Deviation-to-Frequency Converter for Intelligent Resistive Transducers)

  • 이포;정원섭;손상희
    • 전기전자학회논문지
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    • 제12권3호
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    • pp.167-171
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    • 2008
  • 저항형 센서 브리지를 인터페이싱 하기 위한 저항 편차-주파수 변환기를 제시하였다. 이 변환기는 선형 연산 트랜스컨덕턴스 증폭기(linear operational transconductance amplifier: LOTA)와 전류-제어 발진기(current-controlled oscillator: CCO)로 구성된다. 제시된 변환기를 상업용 개별 소자들을 이용하여 SPICE 시뮬레이션 하였다. 시뮬레이션 결과는, 변환기가 16.90 kHz/${\Omega}$의 변환 감도와 ${\pm}$0.03 %의 최대 선형 오차를 가진다는 것을 보여준다.

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BiCMOS 선형 OTA (A BiCMOS linear Operational Transconductance Amplifier)

  • 박지만;소재환;류남규;정원섭
    • 전자공학회논문지A
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    • 제31A권12호
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    • pp.135-141
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    • 1994
  • A linear BiCMOS operational transconductance amplifier (OTA) is described. It consists of a CMOS linear transconductor and a bipolar translineear current gain cell followed by three CMOS current mirrors. The proposed circuit has comparable linearity and temperature stability but superior dc characteristics to its bipolar counterpart. A test circuit with a transconductance of 47.3$\mu$s has been simulated. Simulation results show that a linearity error of less than $\pm$1 percent over an input volgate range from -1.0 to 1.0 V and a output dc offset current as small as-3.6 nA can be obtained.

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Integrated Rail-to-Rail Low-Voltage Low-Power Enhanced DC-Gain Fully Differential Operational Transconductance Amplifier

  • Ferri, Giuseppe;Stornelli, Vincenzo;Celeste, Angelo
    • ETRI Journal
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    • 제29권6호
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    • pp.785-793
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    • 2007
  • In this paper, we present an integrated rail-to-rail fully differential operational transconductance amplifier (OTA) working at low-supply voltages (1.5 V) with reduced power consumption and showing high DC gain. An embedded adaptive biasing circuit makes it possible to obtain low stand-by power dissipation (lower than 0.17 mW in the rail-to-rail version), while the high DC gain (over 78 dB) is ensured by positive feedback. The circuit, fabricated in a standard CMOS integrated technology (AMS 0.35 ${\mu}m$), presents a 37 V/${\mu}s$ slew-rate for a capacitive load of 15 pF. Experimental results and high values of two quality factors, or figures of merit, show the validity of the proposed OTA, when compared with other OTA configurations.

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An OTA with Positive Feedback Bias Control for Power Adaptation Proportional to Analog Workloads

  • Kim, Byungsub;Sim, Jae-Yoon;Park, Hong-June
    • JSTS:Journal of Semiconductor Technology and Science
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    • 제15권3호
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    • pp.326-333
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    • 2015
  • This paper reports an adaptive positive feedback bias control technique for operational transconductance amplifiers to adjust the bias current based on the output current monitored by a current replica circuit. This technique enables operational transconductance amplifiers to quickly adapt their power consumption to various analog workloads when they are configured with negative feedback. To prove the concept, a test voltage follower is fabricated in $0.5-{\mu}m$ CMOS technology. Measurement result shows that the power consumption of the test voltage follower is approximately linearly proportional to the load capacitance, the signal frequency, and the signal amplitude for sinusoidal inputs as well as square pulses.

아날로그 응용을 위한 DWFG MOSFET의 매크로 모델 및 연산증폭기 설계 (Macro Model of DWFG MOSFET for Analog Application and Design of Operational Amplifier)

  • 하지훈;백기주;이대환;나기열;김영석
    • 한국전기전자재료학회논문지
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    • 제26권8호
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    • pp.582-586
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    • 2013
  • In this paper, a simple macro model of n-channel MOSFET with dual workfunction gate (DWFG) structure is proposed. The DWFG MOSFET has higher transconductance and lower drain conductance than conventional MOSFET. Thus analog circuit design using the DWFG MOSFET can improve circuit characteristics. Currently, device models of the DWFG MOSFET are insufficient, so simple series connected two MOSFET model is proposed. In addition, a two stage operational amplifier using the proposed DWFG MOSFET macro model is designed to verify the model.