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Steady and Transient State Analysis on Three Phase-in One Enclosure Type HTS Cable (3상 일괄형 Pipe Type HTS 케이블의 정상 및 과도상태 해석)

  • Jang, Ju-Yeong;Lee, Jong-Beom;Kim, Yong-Kap
    • The Transactions of The Korean Institute of Electrical Engineers
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    • v.59 no.10
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    • pp.1748-1753
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    • 2010
  • This paper suggests an improved technique to establish the modeling regarding steady and transient state on three phase-in one cryostat type HTS(High Temperature Superconducting) cable. The proposed modeling is established using EMTP/ATPDraw and TACS and MODELS provided by that. It has higher accuracy than the conventional method, as the actual HTS cable is modelled. Steady and transient state analysis performed by EMTP/ATPDraw calculate the current of conductor, shield and former, respectively. In case of the transient state modeled quench state occurred by a single line-to-ground fault, current of conductor shield and former are also calculated, respectively. Especially, various fault resistances and angles are considered to improve the reliability during transient state analysis. Analysis results reveal that the proposed technique improves the accuracy of modeling.

A Study on the Operation Characteristic of Induction Generator in the Small Hydropower Plant (소수력 발전소에 적용하는 유도발전기의 동작 특성)

  • Kim, Young-Kuk;Kim, Jong-Gyeum
    • The Transactions of The Korean Institute of Electrical Engineers
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    • v.62 no.5
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    • pp.632-638
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    • 2013
  • In this study, we described voltage fluctuation characteristics of distribution line during starting and normal operation condition of the small hydro generators. Based on these theories, we scrutinized the starting and operating characteristics of induction generators installed in two small hydro power plants that is connected to the distribution line and researched necessary factors when selecting the generator type. The type of turbines and capacity of generators are different. One is below 1,000kW and the other is above 1,000kW. Two generators are tested during starting, and it acts as motor not generator at the instant that the machine is connected to the grid. After connecting to the grid, the machine rotates above synchronous speed before converting to the generator mode. Therefore the characteristic of the generator during starting is same as it of motor.

A study on the High Integrated 1TC SONOS Flash Memory (고집적화된 1TC SONOS 플래시 메모리에 관한 연구)

  • 김주연;이상배;한태현;안호명;서광열
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2002.07a
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    • pp.26-31
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    • 2002
  • To realize a high integrated Flash memory utilizing SONOS memory devices, the NOR type 1TC(one Transistor Cell) SONOS Flash arrays are fabricated and characterized. This SONOS Flash arrays with common source lines are designed and fabricated by conventional 0.35$\mu\textrm{m}$ CMOS process. The thickness of ONO for memory cell is tunnel oxide of 34${\AA}$, nitride of 73${\AA}$ and blocking oxide of 34${\AA}$. To investigate operating characteristics, CHEI(Channel Hot Electron Injection) method and Bit line erase method are selected as the write operation and the erase method, respectively. The disturbance characteristics according to the write/erase/read cycling are also examined. The degradation characteristics are investigated and then the reliability of SONOS flash memory is guaranteed.

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A Study on the Camera Calibration Algorithm using Perspective Ratio of Difference Line Widths

  • Jeong, Jun-Ik;Song, Suck-Woo;Lee, Ho-Soon;Rho, Do-Hwan
    • 제어로봇시스템학회:학술대회논문집
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    • 2001.10a
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    • pp.63.1-63
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    • 2001
  • At 3-D vision measuring, the camera calibration is necessary to calculate parameters accurately. Camera calibration was developed widely in two categories. One is that establishes reference points in space, and the other is that uses the grid type frame and statistical method. But, the former has difficult to setup reference points and the latter has low accuracy. In this paper we present an algorithm for camera calibration using perspective ratio of the grid type frame with different line widths. The advantage of this algorithm is that it can estimate position, pose and distance between camera and object ...

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Fabrication of Nanometer-scale Structure of Hydrogen-passivated p-type Si(100) Surface by SPM (SPM을 이용한 수소화된 p형 Si(100) 표면의 미세구조 제작)

  • Kim, Dong-Sik
    • Journal of the Institute of Electronics Engineers of Korea TE
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    • v.39 no.2
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    • pp.29-33
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    • 2002
  • Various nanometer-scale structures are fabricated on hydrogen-passivated p-type Si(100) surface by scanning probe microscopy(SPM). The hydrogen-passivation is performed by dipping the samples in diluted 10% HF solution for one min.. Pt alloy wires are used for tips and the tips are made by cutting the wires at 45$^{\circ}$ slanted. Various line features are fabricated in various bias voltage. The optimal structure is the line of about 30 nm width on 1.7V bias voltage and 1 nA tunneling current.  

Electromigration Characteristics in PSG/SiO$_2$ Passivated Al-l%Si Thin Film Interconnections

  • Kim, Jin-Young
    • Journal of Korean Vacuum Science & Technology
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    • v.7 no.2
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    • pp.39-44
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    • 2003
  • Recent ULSI and multilevel structure trends in microelectronic devices minimize the line width down to a quarter micron and below, which results in the high current densities in thin film interconnections. Under high current densities, an EM(electromigration) induced failure becomes one of the critical problems in a microelectronic device. This study is to improve thin film interconnection materials by investigating the EM characteristics in PSG(phosphosilicate glass)/SiO$_2$ passivated Al-l%Si thin film interconnections. Straight line patterns, wide and narrow link type patterns, and meander type patterns, etc. were fabricated by a standard photholithography process. The main results are as follows. The current crowding effects result in the decrease of the lifetime in thin film interconnections. The electric field effects accelerate the decrease of lifetime in the double-layered thin film interconnections. The lifetime of interconnections also depends upon the current conditions of P.D.C.(pulsed direct current) frequencies applied at the same duty factor.

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A Study on the High Integrated 1TC SONOS flash Memory (고집적화된 1TC SONOS 플래시 메모리에 관한 연구)

  • 김주연;김병철;서광열
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.16 no.5
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    • pp.372-377
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    • 2003
  • To realize a high integrated flash memory utilizing SONOS memory devices, the NOR type ITC(one Transistor Cell) SONOS flash arrays are fabricated and characterized. This SONOS flash arrays with the common source lines are designed and fabricated by conventional 0.35$\mu\textrm{m}$ CMOS process. The thickness of ONO for memory cells is tunnel oxide of 34${\AA}$, nitride of 73${\AA}$ and blocking oxide of 34${\AA}$ . To investigate operating characteristics, CHEI(Channel Hot Electron Injection) method and bit line method are selected as the program and 4he erase operation, respectively. The disturbance characteristics ,according to the program/erase/read cycling are also examined. The degradation characteristics are investigated and then the reliability of SONOS flash memory is guaranteed.

A Study on the Fabrication of Variable Attenuator using a Diode (다이오드를 이용한 가변 감쇠기의 설계 및 제작에 관한 연구)

  • Jeon, Joong-Sung
    • Journal of Advanced Marine Engineering and Technology
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    • v.32 no.1
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    • pp.147-152
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    • 2008
  • This paper has been fabricated the two different type of variable attenuators using a characteristics of a 3 dB directional coupler and pin diodes. One was not analyzed using the conventional even-odd modes but used simple two-port techniques. The resulting scattering parameters described operation characteristics for the general case where the terminating impedances are equal and unequal. After analyzing resistor role of the ${\pi}$ type fixed attenuator. this paper used a pin diode instead of a resistor. The variable attenuators were fabricated using pin diodes for current-controlled attenuation on the coupled ports of a 3 dB branch-line coupler and ${\pi}$ type fixed attenuator. The realized variable attenuators have more than 33 dB attenuation ranges at 2.1 GHz. and the input and output reflection coefficients are less than -13 dB. These results could be applied to mobile communication systems. It can be varied gain of the power amplifier according to change a outdoor environmental temperature and improved linearity.

New Resonant AC Link Snubber-Assisted Three-Phase Soft-Switching PWM Inverter and Its Comparative Characteristics Evaluations

  • Yoshida, Masanobu;Hiraki, Eiji;Nakaoka, Mutsuo
    • Journal of Power Electronics
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    • v.3 no.4
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    • pp.239-248
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    • 2003
  • This paper presents a novel prototype of three-phase voltage source type zero voltage soft-switching inverter with the auxiliary resonant snubbers suitable for high-power applications with IGBT power module packages in order to reduce their switching power losses as well as electromagnetic conductive and radiative noises. A proposed single inductor-assisted resonant AC link snubber circuit topology as one of some auxiliary resonant commutation snubbers developed previously to achieve the zero voltage soft-switching (ZVS) for the three-phase voltage source type sinewave PWM inverter operating under the instantaneous space voltage vector modulation is originally demonstrated as compared with the other types of resonant AC link snubber circuit topologies. In addition to this, its operation principle and unique features are described in this paper. Furthermore, the practical basic operating performances of the new conceptual instantaneous space voltage vector modulation resonant AC link snubber-assisted three-phase voltage source type soft-switching PWM inverter using IGBT power module packages are evaluated and discussed on the basis of switching voltage and current waveforms, output line to line voltage quality, power loss analysis, actual power conversion efficiency and electromagnetic conductive and radiative noises from an experimental point of view, comparing with those of conventional three-phase voltage source hard-switching PWM inverter using IGBT power modules.

Alternative Splicing of Breast Cancer Associated Gene BRCA1 from Breast Cancer Cell Line

  • Lixia, Miao;Zhijian, Cao;Chao, Shen;Chaojiang, Gu;Congyi, Zheng
    • BMB Reports
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    • v.40 no.1
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    • pp.15-21
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    • 2007
  • Breast cancer is the most common malignancy among women, and mutations in the BRCA1 gene produce increased susceptibility to these malignancies in certain families. In this study, the forward 1-13 exons of breast cancer associated gene BRCA1 were cloned from breast cancer cell line ZR-75-30 by RT-PCR method. Sequence analysis showed that nine BRCA1 splice forms were isolated and characterized, compared with wild-type BRCA1 gene, five splice forms of which were novel. These splice isoforms were produced from the molecular mechanism of 5' and 3' alternative splicing. All these splice forms deleting exon 11b and the locations of alternative splicing were focused on two parts:one was exons 2 and 3, and the other was exons 9 and 10. These splice forms accorded with GT-AG rule. Most these BRCA1 splice variants still kept the original reading frame. Western blot analysis indicated that some BRCA1 splice variants were expressed in ZR-75-30 cell line at the protein level. In addition, we confirmed the presence of these new transcripts of BRCA1 gene in MDA-MB-435S, K562, Hela, HLA, HIC, H9, Jurkat and human fetus samples by RT-PCR analysis. These results suggested that breast cancer associated gene BRCA1 may have unexpectedly a large number of splice variants. We hypothesized that alternative splicing of BRCA1 possibly plays a major role in the tumorigenesis of breast and/or ovarian cancer. Thus, the identification of cancer-specific splice forms will provide a novel source for the discovery of diagnostic or prognostic biomarkers and tumor antigens suitable as targets for therapeutic intervention.