• 마이크로전자및패키징학회지
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• 제12권3호
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• pp.267-274
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• 2005

This paper presents the fabrication of surface acoustic wave (SAW)-based pressure sensor for long-term stable mechanical compression force measurement. SAW pressure sensor has many attractive features for practical pressure measurement: no battery requirement, wireless pressure detection especially at hazardous environments, and easy other functionality integrations such as temperature, humidity, and RFID. A $41^{\circ}$ YX $LiNbO_3$ piezoelectric substrate was used because of its high SAW propagation velocity and large values of electromechanical coupling factors $K^2$. A silicon substrate with $\~200{\mu}m$ deep cavity was bonded to the diaphragm with epoxy, in which gold was covered all over the inner cavity in order to confine electromagnetic energy inside the sensor, and provide good isolation of the device from its environment. The reflection coefficient $S_{11}$ was measured using network analyzer. High S/N ratio, sharp reflected peaks, and clear separation between the peaks were observed. As a mechanical compression force was applied to the diaphragm from top with extremely sharp object, the diaphragm was bended, resulting in the phase shifts of the reflected peaks. The phase shifts were modulated depending on the amount of applied mechanical compression force. The measured $S_{11}$ results showed a good agreement with simulated results obtained from equivalent admittance circuit modeling.

• 한국자동차공학회논문집
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• 제22권4호
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• pp.152-159
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• 2014

Urea solution as a reductant of SCR has been widely used to reduce NOx emissions from diesel engine. But it has lots of problems which are freezing at low temperature due to liquid state, deposition of solid formation in the exhaust, dosing device, and complex package such as mixers for uniform concentration of ammonia. In order to overcome these obstacle, ammonium carbonate which is one of solid ammonium materials to produce ammonia gas directly by sublimation process is considered. Simple reactor with visible widow was designed to predict equilibrium temperature and pressure of ammonium carbonate. To simulate real operation conditions under automobile environment, several cycles of heating and cooling condition were settled, two different re-solidification materials were extracted from the reactor and visible window. Analytical study is performed to characterize these unknown materials by XRD(X-Ray Diffraction), FT-IR(Fourier Transform Infrared Spectroscopy), and EA(Elemental Analyzer). From analytical results, re-solidification materials from heating and cooling cycles are very similar to original material of ammonium carbonate.

• 전기학회논문지
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• 제66권1호
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• pp.203-210
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• 2017

In this paper, we propose a electrical/mechanical method to effectively diagnose the local deterioration of a 10m long power shielded twist pair cable defined by the American Wire Gauge (AWG) 14 specification using electrical/mechanical methods. The rapid deterioration of the cable proceeded by using the heating furnace, which is based on the Arrhenius equations proceeds from 0 to 35 years with the deteriorated equivalent model. In this paper, we introduce a method to diagnose the characteristics of locally deteriorated cable by using $S_{21}$ phase and frequency change rate measured by vector network analyzer which is the electrical diagnostic method. The measured $S_{21}$ phase and rate of change of frequency show a constant correlation with the number of years of locally deteriorated cable, thus it can be useful for diagnosing deteriorated cables. The change of modulus due to deterioration was measured by a modulus measuring device, which is defined by the ratio of deformation from the force externally applied to the cable, and the rate of modulus change also shows a constant correlation with the number of years of locally deteriorated cable. Finally, By combining the advantages of electrical/mechanical diagnostic methods, we can efficiently diagnose the local deterioration in the power shielded cable.

• Transactions on Electrical and Electronic Materials
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• 제18권3호
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• pp.155-158
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• 2017

In this paper, ZnO Thin Film Transistors (TFTs) were fabricated by a sol-gel method using a low-temperature process, and their physical and electrical characteristics were analyzed. To lower the process temperature to $200^{\circ}C$, we used a zinc nitrate hydrate ($Zn(NO_3)_2{\cdot}xH_2O$) precursor. Thermo Gravimetric Analyzer (TGA) analysis showed that the zinc nitrate hydrate precursor solution had 1.5% residual organics, much less than the 6.5% of zinc acetate dihydrate at $200^{\circ}C$. In the sol-gel method, organic materials in the precursor disrupt formation of a high-quality film, and high-temperature annealing is needed to remove the organic residuals, which implies that, by using zinc nitrate hydrate, ZnO devices can be fabricated at a much lower temperature. Using an X-Ray Diffractometer (XRD) and an X-ray Photoelectron Spectrometer (XPS), $200^{\circ}C$ annealed ZnO film with zinc nitrate hydrate (ZnO (N)) was found to have an amorphous phase and much more oxygen vacancy ($V_o$) than Zn-O bonds. Despite no crystallinity, the ZnO (N) had conductance comparable to that of ZnO with zinc acetate dihydrate (ZnO (A)) annealed at $500^{\circ}C$ as in TFTs. These results show that sol-gel could be made a potent process for low-cost and flexible device applications by optimizing the precursors.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2010년도 제39회 하계학술대회 초록집
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• pp.255-255
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• 2010

Recently, nonvolatile memories (NVM) of various types have been researched to improve the electrical performance such as program/erase voltages, speed and retention times. Also, the charge trap memory is a strong candidate to realize the ultra dense 20-nm scale NVM. Furthermore, the high charge efficiency and the thermal stability of SiC nanocrystals NVM with single $SiO_2$ tunnel barrier have been reported. [1-2] In this study, the SiC charge trap NVM was fabricated and electrical properties were characterized. The 100-nm thick Poly-Si layer was deposited to confined source/drain region by using low-pressure chemical vapor deposition (LP-CVD). After etching and lithography process for fabricate the gate region, the $Si_3N_4/SiO_2/Si_3N_4$ (NON) and $SiO_2/Si_3N_4/SiO_2$ (ONO) barrier engineered tunnel layer were deposited by using LP-CVD. The equivalent oxide thickness of NON and ONO tunnel layer are 5.2 nm and 5.6 nm, respectively. By using ultra-high vacuum magnetron sputtering with base pressure 3x10-10 Torr, the 2-nm SiC and 20-nm $SiO_2$ were successively deposited on ONO and NON tunnel layers. Finally, after deposited 200-nm thick Al layer, the source, drain and gate areas were defined by using reactive-ion etching and photolithography. The lengths of squire gate are $2\;{\mu}m$, $5\;{\mu}m$ and $10\;{\mu}m$. The electrical properties of devices were measured by using a HP 4156A precision semiconductor parameter analyzer, E4980A LCR capacitor meter and an Agilent 81104A pulse pattern generator system. The electrical characteristics such as the memory effect, program/erase speeds, operation voltages, and retention time of SiC charge trap memory device with barrier engineered tunnel layer will be discussed.

• 한국정밀공학회지
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• 제13권5호
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• pp.84-94
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• 1996

In order to prevent shell sticking by providing sufficient lubrication between the strand and the mold, the mold oscillation has been used. Now it is well known that the shape of the oscillation curve has a decisive effect on the surface quality of the cast product. Besides, oscillation parameters such as stroke and frequency are also very important. In order to guarantee that parameters which have been found to be optimal for a certain grade of steel do not change with time, periodical checks of the physical condition of the whole equipment are necessary. The portable mold oscillation analyzer with integrated computer, developed by POSCO, records the movement of the mold in every spatial direction. The system uses the gap sensors to measure the mold movement (displacement ) in the two horizontal directions according to the mold narrow and broad faces and the vertical strokes in the four corners of mold. The gap sensor is a non-contacting minute displacement measuring device using the principle of high frequency eddy current loss. The mold oscillation diagnosis system integrates the gap sensors, their converters and the industrial portable computer with plug-in data acquisition boards. The all programs, such as the fast Fourier transformation module (amplitude and phase spectrums) and harmonic analysis module, was coded by LabVIEW$^{TM}$ software as the graphical language. In an own 'expert module' which is included in the diagnosis program, one can obtain much information about the mold oscillation equipment.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2010년도 하계학술대회 논문집
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• pp.11-11
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• 2010

Thin-film-transistors (TFTs) that can be deposited at low temperature have recently attracted lots of applications such as sensors, solar cell and displays, because of the great flexible electronics and transparent. Transparent and flexible transistors are being required that high mobility and large-area uniformity at low temperature [1]. But, unfortunately most of TFT structures are used to be $SiO_2$ as gate dielectric layer. The $SiO_2$ has disadvantaged that it is required to high driving voltage to achieve the same operating efficiency compared with other high-k materials and its thickness is thicker than high-k materials [2]. To solve this problem, we find lots of high-k materials as $HfO_2$, $ZrO_2$, $SiN_x$, $TiO_2$, $Al_2O_3$. Among the High-k materials, $Al_2O_3$ is one of the outstanding materials due to its properties are high dielectric constant ( ~9 ), relatively low leakage current, wide bandgap ( 8.7 eV ) and good device stability. For the realization of flexible displays, all processes should be performed at very low temperatures, but low temperature $Al_2O_3$ grown by sputtering showed deteriorated electrical performance. Further decrease in growth temperature induces a high density of charge traps in the gate oxide/channel. This study investigated the effect of growth temperatures of ALD grown $Al_2O_3$ layers on the TFT device performance. The ALD deposition showed high conformal and defect-free dielectric layers at low temperature compared with other deposition equipments [2]. After ITO was wet-chemically etched with HCl : $HNO_3$ = 3:1, $Al_2O_3$ layer was deposited by ALD at various growth temperatures or lift-off process. Amorphous InGaZnO channel layers were deposited by rf magnetron sputtering at a working pressure of 3 mTorr and $O_2$/Ar (1/29 sccm). The electrodes were formed with electron-beam evaporated Ti (30 nm) and Au (70 nm) bilayer. The TFT devices were heat-treated in a furnace at $300^{\circ}C$ and nitrogen atmosphere for 1 hour by rapid thermal treatment. The electrical properties of the oxide TFTs were measured using semiconductor parameter analyzer (4145B), and LCR meter.

• 센서학회지
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• 제23권3호
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• pp.185-191
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• 2014

The width of depletion region in a varactor diode can be modulated by varying a reverse bias voltage. Thus, the preferred characteristics of depletion capacitance can obtained by the change in the width of depletion region so that it can select only the desirable frequencies. In this paper, the TV tuner varactor diode fabricated by hyper-abrupt profile control technique is presented. This diode can be operated within 3.3 V of driving voltage with capability of UHF band tuning. To form the hyperabrupt profile, firstly, p+ high concentration shallow junction with $0.2{\mu}m$ of junction depth and $1E+20ions/cm^3$ of surface concentration was formed using $BF_2$ implantation source. Simulation results optimized important factors such as epitaxial thickness and dose quality, diffusion time of n+ layer. To form steep hyper-abrupt profile, Formed n+ profile implanted the $PH_3$ source at Si(100) n-type epitaxial layer that has resistivity of $1.4{\Omega}cm$ and thickness of $2.4{\mu}m$ using p+ high concentration Shallow junction. Aluminum containing to 1% of Si was used as a electrode metal. Area of electrode was $30,200{\mu}m^2$. The C-V and Q-V electric characteristics were investigated by using impedance Analyzer (HP4291B). By controlling of concentration profile by n+ dosage at p+ high concentration shallow junction, the device with maximum $L_F$ at -1.5 V and 21.5~3.47 pF at 0.3~3.3 V was fabricated. We got the appropriate device in driving voltage 3.3 V having hyper-abrupt junction that profile order (m factor) is about -3/2. The deviation of capacitance by hyper-abrupt junction with C0.3 V of initial capacitance is due to the deviation of thermal process, ion implantation and diffusion. The deviation of initial capacitance at 0.3 V can be reduced by control of thermal process tolerance using RTP on wafer.

• 마이크로전자및패키징학회지
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• 제16권1호
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• pp.13-19
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• 2009

상대습도와 $CO_2$ 기체의 실시간 동시 감지가 가능한 표면탄성파(SAW: Surface Acoustic Wave) 기반의 무선, 무전원 센서가 개발되었다. 본 소자는 $41^{\circ}YX\;LiNbO_3$ 기판 위에 만들어졌으며, 반사 지연선의 구조로 이루어져 있다. 본 논문의 반사 지연선은 양방향 감지가 가능한 Interdigital transducer(IDT)와 10개의 리플렉터(reflector)로 이루어져 있다. 감지 필름은 Teflon AF 2400과 친수성의 $SiO_2$층이 이용되었으며, 이는 각각 $CO_2$와 상대 습도의 감지를 담당한다. 소자의 제작에 앞서 최적의 소자 설계 조건들을 도출하기 위해 Couple of mode(COM) 모델링이 실시되었다. 시뮬레이션 결과를 반영하여 소자의 제작이 진행되었으며, 네트워크 분석기를 이용하여 무선 측정이 실시 되었다. 시간 영역에서 측정된 반사계수 $S_{11}$은 높은 신호 대 잡음 비, 작은 신호 감쇠, 적은 허위 피크를 보였다. 제작된 소자는 각각 $75{\sim}375ppm$의 $CO_2$ 범위와 $20{\sim}80%$의 상대 습도 범위에서 측정되었으며, 각각 $2^{\circ}/ppm$의 $CO_2$ 민감도, $7.45^{\circ}/%$의 상대습도에 대한 민감도를 보였고, 좋은 선형성과 반복성을 보였다. 또한 민감도 측정 과정에서 온도와 습도의 보상 과정을 거쳐 더욱 정확한 민감도를 갖도록 하였다.

• 한국방사선학회논문지
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• 제17권3호
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• pp.367-373
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• 2023

비행시 승무원이나 승객은 우주방사선과 공기나 비행기 기체와 반응하여 발생한 2차 산란선 등에 의해 피폭을 받게 된다. 항공기 승무원의 경우 우주기상 환경 시뮬레이션을 이용하여 계산된 피폭선량으로 방사선 안전관리를 적용받고 있다. 하지만, 태양활동이나 고도, 비행경로 등에 따라 피폭선량이 가변적이어서 계산법보다는 항로별 측정하는 것이 권고되고 있다. 본 연구에서는 범용 Si 센서와 다중채널파고분석기를 이용하여 우주방사선 선량을 측정할 수 있는 선량계를 개발하였다. 선량계산은 미우주항공국의 우주방사선 측정장비인 CRaTER(Cosmic Ray Telescope for the Effects of Radiation)의 알고리즘을 적용하였다. 표준교정시설에서 Cs-137 662 keV 감마선으로 에너지 및 선량교정을 시행하였으며, 실험 범위에서 선량률 의존성이 없음을 확인하였다. 제작된 선량계를 이용하여 2023년 5월 두바이 인천 구간의 국제선에서 직접 선량을 측정한 결과 국내 우주방사선 선량평가코드(KREAM; Korean Radiation Exposure Assessment Model for Aviation Route Dose)로 계산된 결과와 12% 이내로 비슷하게 나타났으며, 고도와 위도가 높아짐에 따라 계산 결과와 동일하게 선량이 증가하는 것을 확인하였다. 좀 더 많은 실증적 검증 실험이 요구되는 제한점은 있지만, 항공기 내 또는 개인 피폭선량 모니터링에 가성비가 우수한 선량계로 충분한 활용 가능성을 확인하였다.