• Journal of the Institute of Electronics Engineers of Korea SD
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• v.37 no.12
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• pp.29-34
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• 2000

The effects of electrical stress on MILC(Metal Induced Lateral Crystallization) poly-Si TFT were studied. After the electrical stress was applied on the TFT’s which were fabricated by MILC process, off-state(VG<0V) current was reduced by $10^2{\sim}10^4$ times. However, when the device on which electrical stress was applied was annealed in furnace, the off-state current increased as annealing temperature increased. From the dependence of off-state current on the post-annealing temperature, activation energy of the trap states in MILC poly-Si thin films was calculated to be 0.34eV.

• Journal of the Korean Magnetics Society
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• v.14 no.6
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• pp.207-212
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• 2004

Eddy current (EC) testing methods are widely used in a variety of applications including the inspection of steam generator tubes in nuclear power plants, aircraft parts and airframes. A key factor that affects the EC signal is lift-off which means the physical distance between a sensor and a specimen in the testing. In practice, it is difficult to keep track of the actual value of the lift -off during a specific experiment, simulation or testing in the field, which is essential for accurate interpretation of the signal to be used in the following steps. Hence it is necessary to have a scheme to render the EC signal invariant to the effects of lift-off in spite of the changes in the real world. This paper describes a new method for compensating EC signals for variations in lift-off by acquiring an invariance feature using a homomorphic operator and neural network techniques. The signals from various lift-offs are transformed to obtain a zero lift-off equivalent signal that can be subsequently used for defect characterization in the next step.

• Korean Chemical Engineering Research
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• v.48 no.6
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• pp.737-740
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• 2010

High leakage current and threshold voltage shift(${\Delta}Vth$) are demerits of a-Si:H TFT. These characteristics are influenced by gate insulator and active layer film quality, surface roughness, and process conditions. The purpose of this investigation is to improve off current($I_{off}$) and ${\Delta}V_{th}$ characteristics. Nitrogen-rich deposition condition was applied to gate insulator, and hydrogen-rich deposition condition was applied to active layer to reduce electron trap site and improve film density. $I_{off}$ improved from 1.01 pA to 0.18 pA at $65^{\circ}C$, and ${\Delta}V_{th}$ improved from -1.89 V to 1.22 V.

• Journal of the Microelectronics and Packaging Society
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• v.7 no.3
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• pp.27-29
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• 2000

For the DLC-coaled Si-tip FEA, the modified lift off-process, by which DLC coated on both gate electrode surface and gate insulator in the gate aperture could be removed, was proposed. In the process, the Al sacrificial layer was deposited on a tilted and rotated substrate by an e-beam evaporation, and DLC film was coated on the substrate by PA-CVD method. Afterward the DLC was perfectly removed except the DLC films coated on emitter tips by etch-out of Al sacrificial layer. Current-voltage curves and current fluctuation of the DLC-coated Si-tip FEA showed that the proposed lift-off process played an important role in decreasing gate leakage current and stabilizing omission current.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.8 no.4
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• pp.738-742
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• 2007

The variations in the device characteristics of hydrogenated amorphous thin-film transistors (a-Si:H TFTs) were studied according to the processes of pixel electrode fabrication to make active-matrix flat-panel displays. The off-state current was about 1 pA and the switching ratio was over $10^6$ before fabrication of pixel electrodes; however, the off-state current increased over 10 pA after fabrication of pixel electrodes. Surface treatment on SiNx passivation layers using plasma could improve the off-state characteristics after pixel electrode process. $N_2$ plasma treatment gave the best result. Charge accumulation on the SiNx passivation layer during the deposition of transparent conducting layer might cause the increase of off-state current after the fabrication of pixel electrodes.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.43 no.10 s.352
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• pp.10-21
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• 2006

We have studied the characteristics of oxide VCSELS when their off-current and on-current are kept small in order to find out the possibility of low current operation. A large signal equivalent circuit model has been used. By comparing measured data and simulation results, the parameters of the large signal models are obtained including the capacitances. Using the large signal model, we have investigated the effects of capacitance and on/off currents upon the turn-on/turn-off characteristics and eye diagram. According to the experiment and simulation, the depletion capacitance, which has been neglected, is found to have significant influence on the him-on delay and eye-diagram. Therefore, for high speed and low current operation, the reduction of the depletion capacitance is essential.

• Journal of the Institute of Electronics and Information Engineers
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• v.53 no.5
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• pp.69-76
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• 2016

Current driving capability of MCT (MOS Controlled Thyristor) is determined by turn-off capability of conducting current, that is off-FET performance of MCT. On the other hand, having a good turn-on characteristics, including high peak anode current ($I_{peak}$) and rate of change of current (di/dt), is essential for pulsed power system which is one of major application field of MCTs. To satisfy above two requirements, careful control of on/off-FET performance is required. However, triple diffusion and several oxidation processes change surface doping profile and make it hard to control threshold voltage ($V_{th}$) of on/off-FET. In this paper, we have demonstrated the effect of $V_{th}$ adjustment ion implantation on the performance of MCT. The fabricated MCTs (active area = $0.465mm^2$) show forward voltage drop ($V_F$) of 1.25 V at $100A/cm^2$ and Ipeak of 290 A and di/dt of $5.8kA/{\mu}s$ at $V_A=800V$. While these characteristics are unaltered by $V_{th}$ adjustment ion implantation, the turn-off gate voltage is reduced from -3.5 V to -1.6 V for conducting current of $100A/cm^2$ when the $V_{th}$ adjustment ion implantation is carried out. This demonstrates that the current driving capability is enhanced without degradation of forward conduction and turn-on switching characteristics.

• Journal of Electrical Engineering and Technology
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• v.13 no.4
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• pp.1539-1548
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• 2018

This paper introduces a new soft switched AC-DC boost converter with power factor correction (PFC). In the introduced converter, all devices are turned on and off under soft switching (SS). The main switch is turned on under zero voltage transition (ZVT) and turned off under zero current transition (ZCT). The main diode is turned on under zero voltage switching (ZVS) and turned off under zero current switching (ZCS). Meanwhile, there is not any current or voltage stress on the main devices. Besides, the auxiliary switch is turned on under ZCS and turned off under ZVS. The detailed theoretical analysis of the converter is presented, and also theoretical analysis is verified by a prototype with 100 kHz and 500 W. Also, the proposed converter has 99.8% power factor and 97.5% total efficiency at soft switching operation.

• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.560-562
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• 2009

In this paper, we proposed a simple method of decreasing the off current generated by degradation for improve the electrical characteristics such as mobility and on/off current ratio by making the line patterns on the pentacene surface between the electrodes using atomic force microscope (AFM) lithography.

• KSII Transactions on Internet and Information Systems (TIIS)
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• v.3 no.4
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• pp.399-422
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• 2009

Although current wireless mesh network (WMN) applications experience a perceptually uninterrupted hand-off, their throughput after the hand-off event may be significantly degraded due to the low available bandwidth of the mobile client's new master. In this paper, we propose a novel mobility management scheme for 802.11-based WMNs that enables both seamless hand-off for transparent communications, and bandwidth awareness for stable application performance after the hand-off process. To facilitate this, we (i) present a new buffer moment in support of the fast Layer-2 hand-off mechanism to cut the packet loss incurred in the hand-off process to zero and (ii) design a dynamic admission control to grant joining accepts to mesh clients. We evaluate the benefits and drawbacks of the proposal for both UDP and TCP traffic, as well as the fairness of the proposal. Our results show that the new scheme can not only minimize hand-off latency, but also maintain the current application rates of roaming users by choosing an appropriate new master for joining.