• Proceedings of the KIEE Conference
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• 2007.07a
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• pp.272-273
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• 2007

This paper presents the characteristic of rectangular and octagonal spiral inductor using PGS(Patterned Ground Shield). We investigated variation of inductance and Q-factor with changing of turn number at fixed width, spacing and inner diameter. We confirmed that characteristic of inductance and Q-factor be appled PGS in rectangular and octagonal types spiral inductor by EM simulation tool. Inductance decreased irrespective of structure but Q-factor increased. When PGS not exist, Q-factor of Inductor is analogous at classification frequency but, rectangular is a few larger then octagonal in small turn number. The other side, When PGS is inserted, we confirmed that octagonal lager then rectangular in many turn number. Q-factor is improved in case of octagonal structure and small turn number by PGS effect.

• 한국정보통신설비학회:학술대회논문집
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• 2006.08a
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• pp.153-157
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• 2006

본 논문에서는 SoC 공정에 적용 가능한 spiral 인덕터의 특성에 대해 다루었다. 일정한 크기의 인덕터에서 턴 수의 변화에 따른 인덕턴스와 Q-factor의 변화를 보았다. HFSS 프로그램을 사용하여 턴 수와 선로의 폭이 같은 조건하에서 사각형 구조와 팔각형 구조를 갖는 인덕터의 인덕턴스와 Q-factor의 ?냅? 계산하였다. 사각형 구조와 팔각형 구조 모두 선로 폭 보다는 턴 수가 증가할수록 인덕턴스가 증가하였다. 턴 수가 증가할수록 Q-factor의 값은 사각형 구조는 감소한 반면 팔각형 구조는 증가하였다. spiral과 실리콘 사이에 PGS(Patterned Ground Shield)를 삽입하여 인덕턴스 및 Q-factor의 변화를 비교 분석하였다. 그 결과 PGS의 사용으로 사각형 구조와 팔각형 구조에서 턴 수에 따라 Q-factor의 값이 구조에 따라 서로 다른 방향으로 증감하는 것을 확인할 수 있었다.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.13 no.3
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• pp.1284-1287
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• 2012

In this study, we propose the structures of octagonal spiral planar inductors without underpass and via, and confirm the frequency characteristics. The structures of inductors have Si thickness of $300{\mu}m$, $SiO_2$ thickness of $7{\mu}m$. The width of Cu coils and the space between segments have $20{\mu}m$, respectively. The number of turns of coils have 3. The performance of spiral planar inductors was simulated to frequency characteristics for inductance, quality-factor, SRF(Self- Resonance Frequency) using HFSS. The octagonal spiral planar inductors have inductance of 2.5nH over the frequency range of 0.8 to 1.8 GHz, quality-factor of maximum 18.9 at 5 GHz, SRF of 11.1 GHz. Otherwise, square spiral planar inductors have inductance of 2.8nH over the frequency range of 0.8 to 1.8 GHz, quality-factor of maximum 18.9 at 4.9 GHz, SRF of 10.3 GHz.

• Journal of electromagnetic engineering and science
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• v.8 no.2
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• pp.47-51
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• 2008

In this paper, we present a cost effective parallel-branch spiral inductor with the enhanced quality factor and the resonance frequency. This structure is designed to improve the quality factor, but different from other fully stacked spiral inductors. The parallel-branch effect is increased by overlapping the first metal below the second metal with same direction. Measurement result shows an increased quality factor of 12 % improvement. Also, we show an octagonal parallel-branch inductor which reduces the parasitic capacitances for higher frequency applications.

• Proceedings of the Korea Electromagnetic Engineering Society Conference
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• 2003.11a
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• pp.234-238
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• 2003

In this work, we have designed a fully integrated 2.4GHz LC-tuned voltage-controlled oscillator (VCO) with multiple tuning inputs for a $0.25-{\mu}m$ standard CMOS Process. The design of voltage-controlled oscillator is based on an LC-resonator with a spiral inductor of octagonal type and pMOS-varactors. Only two metal layer have been used in the designed inductor. The frequency tuning is achieved by using parallel pMOS transistors as varactors and back-gate tuned pMOS transistors in an active region. Coarse tuning is achieved by using 3-bit pMOS-varactors and fine tuning is performed by using back-gate tuned pMOS transistors in the active region. When 3-bit digital and analog inputs are applied to the designed circuits, voltage-controlled oscillator shows the tuning feature of frequency range between 2.3 GHz and 2.64 GHz. At the power supply voltage of 2.5 V, phase noise is -128dBc/Hz at 3MHz offset from the carrier, Total power dissipation is 7.5 mW.

• Proceedings of the IEEK Conference
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• 2003.11c
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• pp.32-36
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• 2003

In this work, we have designed a fully integrated 2.4GHz LC-tuned voltage-controlled oscillator (VCO) with multiple tuning inputs for a 0.25-$\mu\textrm{m}$ standard CMOS process. The design of voltage-controlled oscillator is based on an LC-resonator with a spiral inductor of octagonal type and pMOS-varactors. Only two metal layer have been used in the designed inductor. The frequency tuning is achieved by using parallel pMOS transistors as varactors and back-gate tuned pMOS transistors in an active region. Coarse tuning is achieved by using 3-bit pMOS-varactors and fine tuning is performed by using back-gate tuned pMOS transistors in the active region. When 3-bit digital and analog inputs are applied to the designed circuits, voltage-controlled oscillator shows the tuning feature of frequency range between 2.3 GHz and 2.64 GHz. At the power supply voltage of 2.5 V, phase noise is -128dBc/Hz at 3MHz offset from the carrier. Total power dissipation is 7.5 mW.