[KSCI] Korea Science Citation Index Service

http://dx.doi.org/10.5515/JKIEES.2008.8.2.047

Parallel-Branch Spiral Inductors with Enhanced Quality Factor and Resonance Frequency

Bae, Hyun-Cheol (RF Circuit Group, IT Convergence & Components Laboratory (ICCL), Electronics and Telecommunications Research Institute)
Oh, Seung-Hyeub (National University of Chungnam)

Publication Information

Journal of electromagnetic engineering and science / v.8, no.2, 2008 , pp. 47-51 More about this Journal

Abstract

In this paper, we present a cost effective parallel-branch spiral inductor with the enhanced quality factor and the resonance frequency. This structure is designed to improve the quality factor, but different from other fully stacked spiral inductors. The parallel-branch effect is increased by overlapping the first metal below the second metal with same direction. Measurement result shows an increased quality factor of 12 % improvement. Also, we show an octagonal parallel-branch inductor which reduces the parasitic capacitances for higher frequency applications.

Keywords

Parallel-Branch Inductor; Quality Factor; Resonance Frequency;

Citations & Related Records

Reference

1	J. Y.-C. Chang, A. A. Abidi, 'Large suspended inductors on silicon and their use in a 2- ${\mu}m$ CMOS RF amplifier', IEEE Electron Device Letter, vol. 14, pp. 246-248, 1993 DOI ScienceOn
2	C. P. Yue, S. S. Wong, 'On-chip spiral inductors with patterned ground shields for Si-based RF ICs', IEEE J. Solid-State Circuits, vol. 33, pp. 743-752, May 1998 DOI ScienceOn
3	A. Zolfaghari, A. Chan, and B. Razavi, 'Stacked inductors and transformers in CMOS technology', IEEE J. Solid-State Circuits, vol. 36, no. 4, pp. 620- 628, Apr. 2001 DOI ScienceOn
4	J. Sieiro et al., 'A physical frequency-dependent compact model for RF integrated inductors', IEEE Trans. Microwave Theory Tech., vol. 50, pp. 384- 392, Jan. 2002 DOI ScienceOn
5	J. R. Long, M. A. Copeland, 'The modeling, characterization and design of monolithic inductors for silicon RF ICs', IEEE J. Solid-State Circuits, vol. 32, pp. 357-369, Mar. 1997 DOI ScienceOn
6	W. Y. Yin et al., 'Vertical topologies of miniature multi-spiral stacked inductors', IEEE Trans. Microwave Theory Tech., vol. 56, pp. 475-486, Feb. 2008 DOI ScienceOn
7	S-M. Yim, T. Chen, and Kenneth K. O., 'The effects of a ground shield on the characteristics and performance of spiral inductors', IEEE J. Solid-State Circuits, vol. 37, pp. 237-244, Feb. 2002 DOI ScienceOn
8	J. N. Burghartz, M. Soyuer, and K. A. Jenkins, 'Microwave inductors and capacitors in standard multilevel interconnect silicon technology', IEEE Trans. Microwave Theory Tech., vol. 44, pp. 100-104, Jan. 1996 DOI ScienceOn
9	K. B. Ashby, W. C. Finley, J. J. Bastek, S. Moinian, and I. A. Koullias, 'High Q inductors for wireless applications in a complementary silicon bipolar process', Proc. Bipolar and BiCMOS Circuits and Technology Meeting, pp. 179-182, 1994
10	R. D. Lutz, Y. Hahm, A. Weisshaar, and V. K. Tripathi, 'Modeling of spiral inductors on lossy substrates for RFIC applications', IEEE MTT-S Int. Microwave Symp. Dig., vol. 3, pp. 1855-1858, 1998