• Journal of the Korean Ceramic Society
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• v.30 no.5
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• pp.397-403
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• 1993

Widely used dielectrics, barium titanate was promising material for ceramic capacitor. It was produced by specific formulation with various dopants-La2O3, ZrO2, SnO2, CaZrO3, CaTiO3, CaSnO3, Bi2O3, and etc.-according to demanded properties of capacitor. In this study, we would examinate the study of dielectric properties and temperatuer characteristics (T.C.) with the amount of Bi2O3. The sample was prepared with [BaTiO3]10＋[BaZrO3, SnO2, La2O3, ZrO2]10 and Bi2O3 varied from 1.0, 1.5, 2.0, 2.5 to 3.0wt%. After milling and mixing for 15hrs, each sample was dried and then pressed at 700kg/$\textrm{cm}^2$ into pellets. Pellets were fired at 131$0^{\circ}C$, for 3hrs in air. As the result of measurements, dielectric constant, break down voltage, and insulation resistance were increased with the amount of Bi2O3, and the resonant frequency was shifted from high frequency to low frequency range. In the case of temperature characteristics, capacitance change rate was symmetrically changed at -$25^{\circ}C$ and ＋85$^{\circ}C$ respectively. Therefore, it is recognized that the temperature characteristics can be moderated with doping Bi2O3 in our study.

• Journal of the Korean Ceramic Society
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• v.30 no.3
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• pp.199-205
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• 1993

Effects of grain size distribution on the breakdown voltage of ZnO varistors were investigated in the ZnO-Bi2O3-CoO-Sb2O3 and ZnO-Bi2O3-CoO-Sb2O3-Cr2O3 systems, respectively. The grain size was increased with increasing sintering temperature maintaining lognormal distribution in both systems. The width of grain size distribution of ZnO-Bi2O3-CoO-Sb2O3 system was narrower than that of ZnO-Bi2O3-CoO-Sb2O3 system. The breakdown voltage(Vb) was decreased by increasing sintering temperature(1000~135$0^{\circ}C$) and sintering time(0.5~5hr), due to the enhancement of ZnO grain growth. The current path of the ZnO varistor was dependent on the distribution of the largest grains (chains of long grains) between the electrodes.

• Korean Journal of Materials Research
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• v.26 no.2
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• pp.90-94
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• 2016

In this study, to increase the strength and enhance the sintering property of $Al_2O_3$, $Y_2O_3$ and $La_2O_3$ were added; the effects of these additions on the sintering characteristics of $Al_2O_3$ were observed. Adding 1% of $Y_2O_3$ to $Al_2O_3$ repressed the development of abnormal particles and reduced the grain boundary migration of $Al_2O_3$, curbing pores to capture particles; as such, the material showed a fine microstructure. But, when over 2% of $Y_2O_3$ was added, the sintering property was reduced because of abnormal particle grain growth and pore formation in particles. Adding 1% of $Y_2O_3$ and $La_2O_3$ to $Al_2O_3$ led to the development of abnormal particles and formed pores in the particles; when over 3% of $La_2O_3$ was added, the sintering property was reduced because the shape of the $Al_2O_3$ particles changed to angled plates.

• Journal of the Korean Ceramic Society
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• v.31 no.10
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• pp.1240-1246
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• 1994

While sintering the Pb(Mg1/3Nb2/3)O3-PbTiO3-BaTiO3 system through solid-reaction route, pyrochlore(Pb3Nb4O13) phase while reduces the dielectric constant is inevitably formed. Substitution of Pb(Mg1/3Nb2/3)O3 with PbTiO3 and BaTiO3 can retard the occurrence of pyrochlore phase. The perovskite solid-solution without containing pyrochlore phase can be obtained when we consolidated the materials consisting of PbTiO3 and BaTiO3 at 1200℃ for 2 hours. The sintered body composed of 0.8Pb(Mg1/3Nb2/3)O3-0.1PbTiO3-0.1BaTiO3 composition showed the diffused phase transition(DPT) phenomena and the maximum value of dielectric constant at 0℃ (Tc') with the value of 1.3×104.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.18 no.8
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• pp.1102-1107
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• 1993

Microwave dielectric properties of CaTiO3 and CaTiO3-TiO2 ceramics for the composition range between 40 and 50 mol% CaO in CaO-TiO2 binary system were investigated. CaTiO3 ceramics with50 mol% CaO showed the dielectric constant (e,) of 178, the temperature coefficient of resonant frequency(c,) of+1000 ppm/'c and the qualify factor Q of 2760 (f0=2.7 GHz ). Dielectric constant and temperature coefficient of resonant frequency of ceramics with dual phases of CaTiO3 and TiO2 decreased gradually from those of CaTiO3 as the CaO content decreased. Q value and density were found to have minimum at the composition of 47 mol% CaO. The degradation of Q value and density in dual phase ceramics seems to be caused by the large pores at grain boundaries and/or within grains remained after rapid growth of CaTiO3 grains as TiO2 Phase decreased.

• Environmental Engineering Research
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• v.16 no.3
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• pp.131-136
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• 2011

The degradation of 30 pharmaceuticals and personal care products (PPCPs) subjected to $O_3$, $O_3$/UV, and $O_3/H_2O_2$ treatments were investigated using semi-batch tests and evaluated by their pseudo-first-order rate constants. The additional application of UV or $H_2O_2$ during $O_3$ treatment significantly improved the degradation rate of most of the PPCPs. At the same $O_3$ feed rate, $O_3$/UV treatment exhibited much higher PPCP degradation efficiency than that of $O_3$ treatment. This was probably due to degradation of the PPCPs by $O_3$, direct UV photodegradation, and OH radicals that formed from the photodegradation of $O_3$ during $O_3$/UV treatment. PPCP degradation by $O_3$ was also promoted by adding $H_2O_2$ during the $O_3$ treatment. However, when the initial $H_2O_2$ concentration was high during $O_3$ treatment, OH radicals were likely to be scavenged by excess $H_2O_2$, leading to low PPCP degradation. Therefore, it is important to determine the appropriate $H_2O_2$ dosage during $O_3$ treatment to improve PPCP degradation when adding $H_2O_2$ during $O_3$ treatment.

• Journal of the Korean Ceramic Society
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• v.41 no.1
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• pp.57-61
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• 2004

Zinc Oxide (ZnO) have the crystal structure of wurtzite which is semiconducting oxide with band gap energy of 3.3eV. $In_2O_3$-doped ZnO films were fabricated by electron beam evaporation at $400^{\circ}C$ and their characteristics were investigated. The content of $In_2O_3$ in ZnO films had a marked effect on the electrical properties of the films. As $In_2O_3$ content decreased. $In_2O_3$-doped ZnO films was converted amorphous into crystallized films and showed a better characteristics generally as a transparent conducting oxide. As $In_2O_3$-doped ZnO films were prepared by $In_2O_3$-doped ZnO pellet with 0.2at% of $In_2O_3$ content, the value of resistivity was about $6.0 {\times} 10^{-3} {\Omega}cm$. The transmittance was higher than 85% throughout the visible range.

• Applied Chemistry for Engineering
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• v.18 no.4
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• pp.314-319
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• 2007

The destruction of synthetic acetic acid wastewater was carried out using UV, $O_3$, $H_2O_2$, $Fe^{2+}$ oxidants in various combinations by the advanced oxidation processes. $UV/H_2O_2$, $UV/H_2O_2/Fe^{2+}$, $O_3$, $O_3/H_2O_2$, $UV/O_3/H_2O_2$, $UV/O_3/H_2O_2/Fe^{2+}$ processes were tested. $UV/H_2O_2/Fe^{2+}$, $O_3/H_2O_2$, $UV/O_3/H_2O_2$, $UV/O_3/H_2O_2/Fe^{2+}$ processes shows the most effective destruction efficiency at low pH (3.5) condition of wastewater, but $UV/H_2O_2$ and $O_3$ processes were observed less than 20%. Destruction efficiency was gradually increased with the reaction time in the $O_3/H_2O_2$ and $UV/O_3/H_2O_2$ processes, in case of the $UV/H_2O_2/Fe^{2+}$ and $UV/O_3/H_2O_2/Fe^{2+}$ processes shows rapid increasing of destruction efficiency within 90 min, then slightly decreasing with time. The destruction efficiencies of $UV/H_2O_2/Fe^{2+}$, $O_3/H_2O_2$, $UV/O_3/H_2O_2$ and $UV/O_3/H_2O_2/Fe^{2+}$ processes were observed 55, 66, 66 and 64%, respectively.

• Journal of the Korean Ceramic Society
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• v.11 no.3
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• pp.19-26
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• 1974

Mechanical properties of the system PbO-B2O3-V2O5 low melting glass during crystallization by heat-treatment were investigated. Wettability of the system PbO-B2O3-V2O5 was excellent and appropriate for commercial sealing as a low melting solder glass. Crystals, during heat-treated at 30$0^{\circ}C$ of the system PbO-B2O3-V2O5 were $\beta$-4PbO.B2O3, 5PbO.4B2O3, and Pb2V2O7 mainly. The percent of crystallinity was 82$\pm$5%. Mechanical properties of the system PbO-B2O3-V2O5 were influenced not only by the differences of density and coefficient of thermal expansion and the stress induced from the difference in the density and coefficient of thermal expansion between glass phase and crystals but also crystallization conditions.

• Journal of the Korean Chemical Society
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• v.38 no.4
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• pp.309-318
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• 1994

The stable defect structure and the single phase region of La$_2O_3$-modified BaTi$O_3$ have been studied by X-ray diffractometer and scanning electron microscope. The stable defect structure of La$_2O_3$-modified BaTi$O_3$ has been identified as [($Ba^x_{Ba})_{1-2x}(La{\cdot}_{Ba})_{2x}][Ti^x_{Ti})_{1-x/2}(V""_{Ti})_{x/2}]O_3$ which consists of La$^{3+}$ ion substitution for Ba$^{3+}$ ion in the lattice structure and the formation of Ti vacancies for the charge compensation. When 3 mol% of La$_2O_3{\cdot}3/2TiO_3$ was added to BaTi$O_3$, the unit cell structure was transformed from tetragonal to cubic and the solubility limit was about 14 mol%. When La$_2O_3{\cdot}3/2TiO_2$ was added above this solubility limit, the second phase, La$_4Ba_2Ti_5O_{18}$, was formed. In the La$_2O_3$-modified BaTi$O_3$, it was found by the liquid phase sintering process that the sinterability was decreased by excess BaO but increased by excess Ti$O_2$.