• Fibers and Polymers
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• v.5 no.2
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• pp.151-155
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• 2004

Cold plasma of $O_2$ or Ar was irradiated on hydrophobic Kapton surface to attenuate or remove the electrostatic potential. A measurement on charge dissipation speed clarifies the obscure effect of plasma. These consequences reveal that $O_2$ plasma etching is more effective than Ar plasma. After 30 days, the dissipation speed of accumulated charge on initially etched sample has not changed under summer season.

• Applied Chemistry for Engineering
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• v.22 no.6
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• pp.711-717
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• 2011

Two dimensional simulation results of a capacitively coupled oxygen plasma in a cylindrical reactor geometry are presented. Detailed electron impact reaction rates, which strongly depend on electron energy, are computed from collision cross sections of electrons with $O_2$ and O. Through the coupling of a three moment plasma model with a neutral chemistry/transport model are predicted spatiotemporal distributions of both charged species (electron, $O_2{^+}$, $O^+$, $O_2{^-}$, and $O^-$) and neutral species including ground states ($O_2$ and O) and metastables, known to play important roles in oxygen plasma, such as $O_2(a^1{\Delta}_g)$, $O_2(b^1{{\Sigma}_g}^+)$, $O(^1D)$, and $O(^1S)$. The simulation results clearly verify the existence of a double layer near sheath boundaries in the electronegative plasma.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.11a
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• pp.11-14
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• 2003

[ $HfO_2$ ] thin films were deposited at $300^{\circ}C$ on p-type Si (100) substrates using $HfO_2(HfO_xN_y)$ as the precursor by plasma-enhanced chemical vapor deposition and were annealed at $300^{\circ}C$ in nitrogen plasma ambient. Compared with $HfO_2$, nitrogen plasma annealed $HfO_2$ show good chemical stability, higher crystallization temperature, lower leakage current and thermal stability. Leakage current density of nitrogen plasma annealed $HfO_2$ is approximately one order of magnitude lower than that of $HfO_2$ for the same EOT. The improvement in electrical characteristics of nitrogen plasma annealed $HfO_2$ can be explained by the better thermal stability due to nitrogen incorporation.

• Proceedings of the Korean Society of Tribologists and Lubrication Engineers Conference
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• 2000.11a
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• pp.80-88
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• 2000

The plasma spray technics has known as one of the surface modification methods to improve the mechenical properties or the functional charactristics of materials. This paper has been aimed to investigate the effects of plasma sprayed conditions, such as spray distance and arc power level, on sliding wear properties of plasma sprayed $Al_2$O$_3$-40%TiO$_2$coating layer. The sliding wear test using pin-on-disc type wear machine, has been conducted in several sliding speed for coating layer sparyed under different conditions. The result of this paper is that the wear resistance of plasma sprayed $Al_2$O$_3$-40%TiO$_2$coating layer is fluctuated with tile spray distance and the arc power level. The wear resiatance could be improved with decreasing the spray distance and with increasing the arc power level.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2003.05a
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• pp.54-54
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• 2003

MgO layer는 POP 패빌 내 유전증을 이온의 스퍼터링으로부터 보호하여 주며, 또한 높은 이차 전자 밤출 계수의 특성을 가지고 있어 구동 및 유지 전압을 낮춰 주는 역할을 한다. 그러나. MgO layer는 $H_20,{\;}CO_2,{\;}N_2,{\;}0_2$ 그리고 $H_2$와 같은 불순물 들을 쉽게 를착하는 단점이 있어, PDP의 특성 및 수명 단축에 영향을 줄 수 있다. 따라서, 본 연구에서는 atmospheric pressure plasma cleaning 과 low pressure i inductively coupled plasma (ICP) cleaning 처리에 의하여, 보호층으로 사용이 되는 MgO layer의 outgassing 특성을 조사하고자 한다. plasma cleaning에 의한 MgO layer 표면의 roughness와 불순물의 변화를 알아보기 위 하여 atomic force microscopy(AFM)과 x-ray p photoelectron spectroscopy(XPS)를 이용하여 측정 하였다. 또한, outgassing의 특성을 분석하기 위하여 MgO layer를 $400^{\circ}C$ 까지 온도를 가하여 온도에 따른 outgassing의 특성을 quadrupole mass spectrometer(QMS)를 이용하여 알아보았다. atmospheric pressure plasma cleaning 에서는 $He/O_2/Ar/N_2$의 gas를 사용하였으며, low pressure ICP cleaning 에 서는 Ar의 gas를 사용하였다. atmospheric pressure plasma cleaning는 low pressure ICP C cleaning과 비교해 더 낮은 outgassing을 관잘 할 수 있었으나. MgO 표면의 roughness는 low pressure ICP cleaning 후 더 낮은 것을 알 수 있었다. 또한 $He/O_2/Ar/N_2$의 gas를 사용 한 atmospheric pressure plasma cleaning 과 $Ar/O_2$의 gas를 사용한 ICP cleaning에서 이 차전자방출계수(SEEC)가 약 1.5~2.5배 증가된 것을 알 수 있었다.

• Proceedings of the Korean Powder Metallurgy Institute Conference
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• 2006.09a
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• pp.234-235
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• 2006

In this study, the plasma sprayed $Al_2O_3$ and $Y_2O_3$ coatings have been investigated for applications of microelectronic components. The plasma sprayed coatings had a well-defined splatted lamellae microstructure, intersplat pores and a higher amount of microcracks within the splats. The plasma sprayed $Y_2O_3$ coating had a relatively lower hardness of 300-400Hv, compared to 650-800Hv for $Al_2O_3$ coating, and would be readily damaged by mechanical attacks such as erosion, wear and friction. For a reactive ion etching against F-containing plasmas, however, the $Y_2O_3$ coating had a much higher resistance than the $Al_2O_3$ coating because of the reduced erosion rate of by-products.

• Journal of Korean Society for Atmospheric Environment
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• v.30 no.6
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• pp.577-585
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• 2014

A series of experiments using atmospheric-pressure non-thermal plasma coupled with transition metal catalysts were performed to remove ethylene from agricultural storage facilities. The non-thermal plasma was created by dielectric barrier discharge, which was in direct contact with the catalyst pellets. The transition metals such as Ag and $V_2O_5$ were supported on ${\gamma}-Al_2O_3$. The effect of catalyst type, specific input energy (SIE) and oxygen content on the removal of ethylene was examined to understand the behavior of the hybrid plasma-catalytic reactor system. With the other parameters kept constant, the plasma-catalytic activity for the removal of ethylene was in order of $V_2O_5/{\gamma}-Al_2O_3$ > $Ag/{\gamma}-Al_2O_3$ > ${\gamma}-Al_2O_3$ from high to low. Interestingly, the rate of plasma-catalytic ozone generation was in order of $V_2O_5/{\gamma}-Al_2O_3$ > ${\gamma}-Al_2O_3$ > $Ag/{\gamma}-Al_2O_3$, implying that the catalyst activation mechanisms by plasma are different for different catalysts. The results obtained by varying the oxygen content indicated that nitrogen-derived reactive species dominated the removal of ethylene under oxygen-lean condition, while ozone and oxygen atoms were mainly involved in the removal under oxygen-rich condition. When the plasma was coupled with $V_2O_5/{\gamma}-Al_2O_3$, nearly complete removal of ethylene was achieved at oxygen contents higher than 5% by volume (inlet ethylene: 250 ppm; gas flow rate: $1.0Lmin^{-1}$; SIE: ${\sim}355JL^{-1}$).

• Journal of the Korean Vacuum Society
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• v.15 no.3
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• pp.259-265
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• 2006

We measured sputtering yield of RF $O_2-plasma$ treated MgO protective layer for AC-PDP(plasma display panel) using a Focused ion Beam System(FIB). A 10 kV acceleration voltage was applied. The sputtering yield of the untreated sample and the treated sample were 0.33 atoms/ion and 0.20 atoms/ion, respectively. The influence of the plasma-treatment of MgO thin film was characterized by XPS and AFM analysis. We observed that the binding energy of the O 1s spectra, the FWHM of O 1s spectra and the RMS(root-mean-square) of surface roughness decreased to 2.36 eV, 0.6167 eV and 0.32 nm, respectively.

• Journal of Korean Society for Atmospheric Environment
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• v.16 no.4
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• pp.373-380
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• 2000

A new type of photocatalyst plasma air purification filter for decomposition of some VOCs has been developed. The photocatalyst plasma air purification filter employs the pulsed discharge plasma as an energy source of TiO2. photocatalyst instead of UV light. In closed room(2m3) test removal efficiency of some VOCs was 80∼100% in 15∼24 hours. In the initial step of phptocatalyst plasma reaction. Acetone and Nitromethane etc were detected. But they were completely oxidized to CO2 and H2O.

• Journal of the Korean Society of Clothing and Textiles
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• v.36 no.10
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• pp.1117-1124
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• 2012

This study was a preliminary study to investigate the influence of surface morphology and characteristics on the self-cleaning of substrates. PI film was treated by $O_2$ plasma to modify the surface; in addition, AFM and Fe-SEM were employed to examine the morphological changes induced on a PI film treated by $O_2$ plasma and surface energies calculated from measured contact angles between several solutions and PI film based on the geometric mean and a Lewis acid base method. The surface roughness of PI film treated by $O_2$ plasma increased with the duration of the $O_2$ plasma on PI film due to the increased surface etching. The contact angle of film treated by $O_2$ plasma decreased with the increased treatment time in water and surfactant solution; in addition, the surface energy increased with the increased treatment times largely attributed to the increased portion on the polar surface energy of PI film. The coefficient of the correlation between surface roughness and surface polarity such as contact angle and surface energy was below 0.35; however, it was over 0.99 for the contact angle and surface energy.